公开(公告)号：US20160052777A1

公开(公告)日：2016-02-25

申请号：US14930642

申请日：2015-11-02

Applicant: mCube Inc.

Inventor： TE-HSI "TERRENCE" LEE ,  SUDHEER S. SRIDHARAMURTHY ,  SHINGO YONEOKA ,  WENHUA ZHANG

IPC: B81B7/00

CPC classification number: B81B7/0022 ,  B81B3/0086 ,  B81B2203/0118 ,  B81B2203/0307 ,  B81B2207/11 ,  B81C1/00246 ,  B81C1/0038 ,  B81C1/00531 ,  B81C1/00801 ,  B81C2201/053

Abstract: An integrated circuit includes a substrate member having a surface region and a CMOS IC layer overlying the surface region. The CMOS IC layer has at least one CMOS device. The integrated circuit also includes a bottom isolation layer overlying the CMOS IC layer, a shielding layer overlying a portion of the bottom isolation layer, and a top isolation layer overlying a portion of the bottom isolation layer. The bottom isolation layer includes an isolation region between the top isolation layer and the shielding layer. The integrated circuit also has a MEMS layer overlying the top isolation layer, the shielding layer, and the bottom isolation layer. The MEMS layer includes at least one MEMS structure having at least one movable structure and at least one anchored structure. The at least one anchored structure is coupled to a portion of the top isolation layer, and the at least one movable structure overlies the shielding layer.

Abstract translation: 集成电路包括具有表面区域的衬底构件和覆盖在表面区域上的CMOS IC层。 CMOS IC层具有至少一个CMOS器件。 集成电路还包括覆盖CMOS IC层的底部隔离层，覆盖在底部隔离层的一部分上的屏蔽层和覆盖在底部隔离层的一部分上的顶部隔离层。 底部隔离层包括顶部隔离层和屏蔽层之间的隔离区域。 集成电路还具有覆盖顶部隔离层，屏蔽层和底部隔离层的MEMS层。 MEMS层包括具有至少一个可移动结构和至少一个锚定结构的至少一个MEMS结构。 所述至少一个锚定结构耦合到所述顶部隔离层的一部分，并且所述至少一个可移动结构覆盖所述屏蔽层。

公开(公告)号：US20140311242A1

公开(公告)日：2014-10-23

申请号：US14162718

申请日：2014-01-23

Applicant: mCube Inc.

Inventor： TERRENCE LEE ,  WENHUA ZHANG ,  SUDHEER SRIDHARAMURTHY ,  SHINGO YONEOKA

IPC: G01C19/56 ,  G01P15/02

CPC classification number: G01C19/56 ,  B81B7/0038 ,  B81B2201/0235 ,  B81B2201/0242 ,  G01C19/5783 ,  G01P1/003 ,  G01P15/02 ,  G01P15/18 ,  G01P2015/0871 ,  G01P2015/088

Abstract: A multi-axis integrated MEMS inertial sensor device. The device can include an integrated 3-axis gyroscope and 3-axis accelerometer on a single chip, creating a 6-axis inertial sensor device. The structure is spatially with efficient use of the design area of the chip by adding the accelerometer device to the center of the gyroscope device. The design architecture can be a rectangular or square shape in geometry, which makes use of the whole chip area and maximizes the sensor size in a defined area. The MEMS is centered in the package, which is beneficial to the sensor's temperature performance. Furthermore, the electrical bonding pads of the integrated multi-axis inertial sensor device can be configured in the four corners of the rectangular chip layout. This configuration guarantees design symmetry and efficient use of the chip area.

Abstract translation: 多轴集成MEMS惯性传感器装置。 该设备可以在单个芯片上包含一个集成的3轴陀螺仪和3轴加速度计，创建了6轴惯性传感器设备。 通过将加速度计装置添加到陀螺仪装置的中心，该结构在空间上有效地利用了芯片的设计区域。 设计架构可以是几何形状的矩形或方形形状，它利用整个芯片区域，并在一定的区域内最大化传感器尺寸。 MEMS集中在封装中，这有利于传感器的温度性能。 此外，集成的多轴惯性传感器装置的电接合焊盘可以配置在矩形芯片布局的四个角中。 该配置保证了设计的对称性和芯片面积的有效利用。

公开(公告)号：US20160039667A1

公开(公告)日：2016-02-11

申请号：US14887622

申请日：2015-10-20

Applicant: mCube Inc.

Inventor： WENHUA ZHANG ,  SHINGO YONEOKA

IPC: B81C1/00 ,  H01L21/56

CPC classification number: B81B7/02 ,  B81B7/0041 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0292 ,  B81C1/00293 ,  B81C1/00333 ,  B81C2203/0109 ,  B81C2203/0145 ,  B81C2203/0154 ,  H01L21/56 ,  H01L41/1132

Abstract: A method for fabricating a multiple MEMS device includes providing a semiconductor substrate having a first and second MEMS device, and an encapsulation wafer with a first cavity and a second cavity, which includes at least one channel. The first MEMS is encapsulated within the first cavity and the second MEMS device is encapsulated within the second cavity. These devices is encapsulated within a first encapsulation environment at a first air pressure, and encapsulating the first MEMS device within the first cavity at the first air pressure. The second MEMS device within the second cavity is then subjected to a second encapsulating environment at a second air pressure via the channel of the second cavity.

Abstract translation: 一种用于制造多个MEMS器件的方法包括提供具有第一和第二MEMS器件的半导体衬底以及包括至少一个通道的具有第一腔和第二腔的封装晶片。 第一MEMS封装在第一腔内，第二MEMS器件被封装在第二腔内。 这些装置在第一空气压力下封装在第一封装环境内，并且在第一空气压力下将第一MEMS装置封装在第一空腔内。 然后第二腔内的第二MEMS器件经由第二腔的通道在第二空气压力下经受第二封装环境。

公开(公告)号：US20150315016A1

公开(公告)日：2015-11-05

申请号：US14311034

申请日：2014-06-20

Applicant: mCube Inc.

Inventor： SHINGO YONEOKA ,  Anthony F. Flannery, JR.

IPC: B81C1/00 ,  B81B7/02

CPC classification number: B81C1/00246 ,  B81B7/02 ,  B81B2201/0264 ,  B81C1/00269 ,  B81C2203/0742 ,  G01L9/0042 ,  G01L9/0045 ,  G01L9/0054 ,  G01L9/0073 ,  G01L19/0084 ,  G01L19/143

Abstract: An integrated pressure sensing device and method of fabrication thereof are disclosed. The method can include providing a substrate member having a surface region and forming a CMOS IC layer overlying the substrate and forming an oxide layer overlying the CMOS IC layer. A portion of the oxide layer can be removed to form a cavity region. A single crystalline silicon wafer can be bonded overlying the oxide surface region to seal the cavity region. The bonding process can include a fusion bonding or eutectic bonding process. The wafer can be thinned to a desired thickness and portions can be removed and filled with metal materials to form via structures. A pressure sensor device can be formed from the wafer, and can be co-fabricated with another sensor from the wafer. The pressure sensor and the other sensor can share a cavity pressure or have separate cavity pressures.

Abstract translation: 公开了一种集成的压力感测装置及其制造方法。 该方法可以包括提供具有表面区域的衬底构件，并且形成覆盖衬底的CMOS IC层并形成覆盖在CMOS IC层上的氧化物层。 可以去除氧化物层的一部分以形成空腔区域。 可以将单晶硅晶片粘合在氧化物表面区域上以密封空腔区域。 接合工艺可以包括熔接或共熔粘合工艺。 可以将晶片减薄到所需的厚度，并且可以去除部分并用金属材料填充以形成通孔结构。 压力传感器装置可以由晶片形成，并可与来自晶片的另一传感器共同制造。 压力传感器和另一个传感器可以共享腔体压力或具有单独的腔体压力。

公开(公告)号：US20140361348A1

公开(公告)日：2014-12-11

申请号：US14297337

申请日：2014-06-05

Applicant: MCube Inc.

Inventor： SHINGO YONEOKA ,  Sudheer Sridharamurthy ,  Wenhua Zhang ,  Te-Hsi Terrence Yoneoka

IPC: G01P15/13 ,  G01P15/08

CPC classification number: G01P15/131 ,  G01C19/5712 ,  G01C19/5719 ,  G01C19/5762 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/084 ,  G01P2015/0865

Abstract: An integrated MEMS inertial sensor device. The device includes a MEMS inertial sensor overlying a CMOS substrate. The MEMS inertial sensor includes a drive frame coupled to the surface region via at least one drive spring, a sense mass coupled to the drive frame via at least a sense spring, and a sense electrode disposed underlying the sense mass. The device also includes at least one pair of quadrature cancellation electrodes disposed within a vicinity of the sense electrode, wherein each pair includes an N-electrode and a P-electrode.

Abstract translation: 集成的MEMS惯性传感器装置。 该器件包括覆盖CMOS衬底的MEMS惯性传感器。 MEMS惯性传感器包括经由至少一个驱动弹簧耦合到表面区域的驱动框架，经由至少一个感测弹簧耦合到驱动框架的感测质量块和设置在感测质量块下方的感测电极。 该装置还包括设置在感测电极附近的至少一对正交消除电极，其中每对包括N电极和P电极。