公开(公告)号：US09194882B2

公开(公告)日：2015-11-24

申请号：US14447696

申请日：2014-07-31

Applicant: Robert Bosch GmbH

Inventor： Ando Feyh ,  Gary O'Brien

IPC: B81B3/00 ,  G01P15/08 ,  G01P15/14 ,  G01P1/02 ,  G01P15/125 ,  G01L1/14 ,  G01L1/18

CPC classification number: G01P15/0802 ,  B81B3/0021 ,  B81B7/02 ,  B81B2201/025 ,  B81B2201/0264 ,  G01C19/5769 ,  G01C19/5783 ,  G01L1/14 ,  G01L1/18 ,  G01P1/023 ,  G01P15/125 ,  G01P15/14 ,  G01P15/18 ,  G01P2015/0862 ,  G01P2015/088

Abstract: In one embodiment, the process flow for a capacitive pressures sensor is combined with the process flow for an inertial sensor. In this way, an inertial sensor is realized within the membrane layer of the pressure sensor. The device layer is simultaneously used as z-axis electrode for out-of-plane sensing in the inertial sensor, and/or as the wiring layer for the inertial sensor. The membrane layer (or cap layer) of the pressure sensor process flow is used to define the inertial sensor sensing structures. Insulating nitride plugs in the membrane layer are used to electrically decouple the various sensing structures for a multi-axis inertial sensor, allowing for fully differential sensing.

Abstract translation: 在一个实施例中，电容式压力传感器的工艺流程与惯性传感器的工艺流程相结合。 以这种方式，在压力传感器的膜层内实现惯性传感器。 器件层同时用作惯性传感器中的平面外感测的z轴电极，和/或用作惯性传感器的布线层。 压力传感器工艺流程的膜层（或盖层）用于定义惯性传感器感测结构。 膜层中的绝缘氮化物塞用于电耦合用于多轴惯性传感器的各种感测结构，允许完全差分感测。

公开(公告)号：US08997564B2

公开(公告)日：2015-04-07

申请号：US13492717

申请日：2012-06-08

Applicant: Steven S. Nasiri ,  David Sachs ,  Babak Taheri

Inventor： Steven S. Nasiri ,  David Sachs ,  Babak Taheri

IPC: G01P1/02 ,  G01P15/00 ,  G01P15/18 ,  G01P15/08 ,  G01P15/125 ,  G01C19/5769

CPC classification number: G01C19/5776 ,  G01C19/5769 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/125 ,  G01P15/18 ,  G01P2015/0845 ,  G01P2015/0865 ,  G01P2015/088

Abstract: A module operable to be mounted onto a surface of a board. The module includes a linear accelerometer to provide a first measurement output corresponding to a measurement of linear acceleration in at least one axis, and a first rotation sensor operable to provide a second measurement output corresponding to a measurement of rotation about at least one axis. The accelerometer and the first rotation sensor are formed on a first substrate. The module further includes an application specific integrated circuit (ASIC) to receive both the first measurement output from the linear accelerometer and the second measurement output from the first rotation sensor. The ASIC includes an analog-to-digital converter and is implemented on a second substrate. The first substrate is vertically bonded to the second substrate.

Abstract translation: 一种可操作以安装在电路板表面上的模块。 该模块包括线性加速度计，以提供对应于至少一个轴线性加速度的测量的第一测量输出，以及第一旋转传感器，其可操作以提供对应于围绕至少一个轴线的旋转测量的第二测量输出。 加速度计和第一旋转传感器形成在第一基板上。 该模块还包括专用集成电路（ASIC），用于接收来自线性加速度计的第一测量输出和来自第一旋转传感器的第二测量输出。 ASIC包括模数转换器并且被实现在第二基板上。 第一衬底垂直地结合到第二衬底。

公开(公告)号：US20140311242A1

公开(公告)日：2014-10-23

申请号：US14162718

申请日：2014-01-23

Applicant: mCube Inc.

Inventor： TERRENCE LEE ,  WENHUA ZHANG ,  SUDHEER SRIDHARAMURTHY ,  SHINGO YONEOKA

IPC: G01C19/56 ,  G01P15/02

CPC classification number: G01C19/56 ,  B81B7/0038 ,  B81B2201/0235 ,  B81B2201/0242 ,  G01C19/5783 ,  G01P1/003 ,  G01P15/02 ,  G01P15/18 ,  G01P2015/0871 ,  G01P2015/088

Abstract: A multi-axis integrated MEMS inertial sensor device. The device can include an integrated 3-axis gyroscope and 3-axis accelerometer on a single chip, creating a 6-axis inertial sensor device. The structure is spatially with efficient use of the design area of the chip by adding the accelerometer device to the center of the gyroscope device. The design architecture can be a rectangular or square shape in geometry, which makes use of the whole chip area and maximizes the sensor size in a defined area. The MEMS is centered in the package, which is beneficial to the sensor's temperature performance. Furthermore, the electrical bonding pads of the integrated multi-axis inertial sensor device can be configured in the four corners of the rectangular chip layout. This configuration guarantees design symmetry and efficient use of the chip area.

Abstract translation: 多轴集成MEMS惯性传感器装置。 该设备可以在单个芯片上包含一个集成的3轴陀螺仪和3轴加速度计，创建了6轴惯性传感器设备。 通过将加速度计装置添加到陀螺仪装置的中心，该结构在空间上有效地利用了芯片的设计区域。 设计架构可以是几何形状的矩形或方形形状，它利用整个芯片区域，并在一定的区域内最大化传感器尺寸。 MEMS集中在封装中，这有利于传感器的温度性能。 此外，集成的多轴惯性传感器装置的电接合焊盘可以配置在矩形芯片布局的四个角中。 该配置保证了设计的对称性和芯片面积的有效利用。

公开(公告)号：US08746067B2

公开(公告)日：2014-06-10

申请号：US13736853

申请日：2013-01-08

Applicant: TiaLinx, Inc.

Inventor： Hector J. De Los Santos ,  Farrokh Mohamadi

IPC: G01P15/08

CPC classification number: G01P15/08 ,  G01P15/0802 ,  G01P15/0894 ,  G01P2015/0814 ,  G01P2015/088

Abstract: A tunneling accelerometer includes a proof mass that moves laterally with respect to a cap wafer. Either the proof mass or the cap wafer includes a plurality of tunneling tips such that the remaining one of proof mass and the cap wafer includes a corresponding plurality of counter electrodes. The tunneling current flowing between the tunneling tips and the counter electrodes will thus vary as the proof mass laterally displaces in response to an applied acceleration.

Abstract translation: 隧道加速度计包括相对于盖晶片横向移动的检验质量块。 检测质量块或盖片晶片都包括多个隧道尖端，使得剩余的一个检测质量块和盖片晶片包括相应的多个对电极。 因此，隧道尖端和对置电极之间流动的隧穿电流将随着检测质量响应于所施加的加速度而横向移位而变化。

公开(公告)号：US08487387B2

公开(公告)日：2013-07-16

申请号：US13526279

申请日：2012-06-18

Applicant: Yizhen Lin ,  Woo Tae Park ,  Mark E. Schlarmann ,  Hemant D. Desai

Inventor： Yizhen Lin ,  Woo Tae Park ,  Mark E. Schlarmann ,  Hemant D. Desai

IPC: H01L29/82

CPC classification number: H01L28/60 ,  B81B7/02 ,  B81B2201/025 ,  B81B2201/0264 ,  G01L9/0073 ,  G01L19/0092 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/088 ,  H01G5/18

Abstract: A device (20, 90) includes sensors (28, 30) that sense different physical stimuli. A pressure sensor (28) includes a reference element (44) and a sense element (52), and an inertial sensor (30) includes a movable element (54). Fabrication (110) entails forming (112) a first substrate structure (22, 92) having a cavity (36, 100), forming a second substrate structure (24) to include the sensors (28, 30), and coupling (128) the substrate structures so that the first sensor (28) is aligned with the cavity (36, 100) and the second sensor (30) is laterally spaced apart from the first sensor (28). Forming the second structure (24) includes forming (118) the sense element (52) from a material layer (124) of the second structure (24) and following coupling (128) of the substrate structures, concurrently forming (132) the reference element (44) and the movable element (54) in a wafer substrate (122) of the second structure (24).

Abstract translation: 装置（20,90）包括感测不同物理刺激的传感器（28,30）。 压力传感器（28）包括参考元件（44）和感测元件（52），惯性传感器（30）包括可移动元件（54）。 制造（110）需要形成（112）具有空腔（36,100）的第一衬底结构（22,92），形成包括传感器（28,30）的第二衬底结构（24）和耦合（128） 所述基板结构使得所述第一传感器（28）与所述空腔（36,100）对准，并且所述第二传感器（30）与所述第一传感器（28）横向间隔开。 形成第二结构（24）包括从第二结构（24）的材料层（124）和衬底结构的耦合（128）形成（118）感测元件（52），同时形成（132）参考 元件（44）和第二结构（24）的晶片衬底（122）中的可移动元件（54）。

公开(公告)号：US08347720B2

公开(公告)日：2013-01-08

申请号：US12826605

申请日：2010-06-29

Applicant: Hector J. De Los Santos ,  Farrokh Mohamadi

Inventor： Hector J. De Los Santos ,  Farrokh Mohamadi

IPC: G01P15/08

CPC classification number: G01P15/08 ,  G01P15/0802 ,  G01P15/0894 ,  G01P2015/0814 ,  G01P2015/088

Abstract: A tunneling accelerometer includes a proof mass that moves laterally with respect to a cap wafer. Either the proof mass or the cap wafer includes a plurality of tunneling tips such that the remaining one of proof mass and the cap wafer includes a corresponding plurality of counter electrodes. The tunneling current flowing between the tunneling tips and the counter electrodes will thus vary as the proof mass laterally displaces in response to an applied acceleration.

Abstract translation: 隧道加速度计包括相对于盖晶片横向移动的检验质量块。 检测质量块或盖片晶片都包括多个隧道尖端，使得剩余的一个检测质量块和盖片晶片包括相应的多个对电极。 因此，隧道尖端和对置电极之间流动的隧穿电流将随着检测质量响应于所施加的加速度而横向移位而变化。

公开(公告)号：US20110291208A1

公开(公告)日：2011-12-01

申请号：US13115632

申请日：2011-05-25

Applicant: Shigekazu TAKAGI

Inventor： Shigekazu TAKAGI

IPC: H01L29/84

CPC classification number: G01P15/0802 ,  B81B7/02 ,  B81B2201/025 ,  B81B2203/0118 ,  B81C1/00182 ,  B81C2201/019 ,  G01C19/5663 ,  G01P15/125 ,  G01P2015/0828 ,  G01P2015/0837 ,  G01P2015/0877 ,  G01P2015/088 ,  H01G5/18 ,  H01G5/38 ,  H01L28/60

Abstract: Manufacturing of an element structure including a capacitor is to be facilitated. An element structure includes a first substrate that has a first support layer and a first movable beam having one end supported side the first support layer and the other end having a void part provided therearound and a second substrate that has a second support layer and a first fixing electrode formed side the second support layer wherein the second substrate is disposed to face above the first substrate, the first movable beam is provided with a first movable electrode and the first fixing electrode and the first movable electrode are disposed to face each other, with a gap therebetween.

Abstract translation: 容易制造包括电容器的元件结构。 元件结构包括具有第一支撑层的第一基板和第一可移动梁，第一可移动梁的一端支撑在第一支撑层上，另一端具有设置在其周围的空隙部分，第二基板具有第二支撑层和第二支撑层 固定电极形成在第二支撑层上，其中第二基板被设置为面对第一基板上方，第一可移动光束设置有第一可动电极，并且第一固定电极和第一可动电极被设置为彼此面对， 它们之间的间隙。

公开(公告)号：US09671423B2

公开(公告)日：2017-06-06

申请号：US14477104

申请日：2014-09-04

Applicant: Seiko Epson Corporation

Inventor： Shigekazu Takagi

IPC: G01P15/125 ,  G01P15/08

CPC classification number: G01P15/125 ,  G01P2015/088 ,  Y10T29/49117

Abstract: An electronic device includes a substrate, a lid which is bonded to the substrate, and a functional element which is provided between the substrate and the lid, in which the lid includes a penetration hole which penetrates a portion between an inner surface and an outer surface, the penetration hole includes a first hole portion and a second hole portion, a flat area of the second hole portion is set to be smaller than a flat area of the first hole portion, at least a part of an inner wall surface of the second hole portion substantially forms a right angle with respect to a bottom surface of the first hole portion, and the penetration hole is sealed with a sealing member.

公开(公告)号：US20140339654A1

公开(公告)日：2014-11-20

申请号：US14120386

申请日：2014-05-14

Applicant: Johannes Classen

Inventor： Johannes Classen

IPC: G01P1/00 ,  G01P15/08

CPC classification number: G01P1/003 ,  B81B3/0078 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/04 ,  B81B2203/051 ,  G01C19/5755 ,  G01P15/0802 ,  G01P15/0888 ,  G01P15/097 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/0877 ,  G01P2015/088 ,  G01P2015/0882

Abstract: A micropatterned component, for measuring accelerations and/or yaw rates, including a substrate having a principal plane of extension of the substrate, an electrode, and a further electrode; the electrode having a principal plane of extension of the electrode, and the further electrode having a principal plane of extension of the further electrode; the principal plane of extension of the electrode being set parallelly to a normal direction perpendicular to the principal plane of extension of the substrate; the principal plane of extension of the further electrode being set parallelly to the normal direction; the electrode having an electrode height extending in the normal direction; the electrode having a flow channel extending completely through the electrode in a direction parallel to the principal plane of extension of the substrate; the flow channel having a channel depth extending parallelly to the normal direction; the channel depth being less than the electrode height.

Abstract translation: 用于测量加速度和/或偏转速率的微图案化部件，包括具有基底的主平面延伸的基底，电极和另外的电极; 所述电极具有所述电极的延伸的主平面，并且所述另一电极具有所述另一电极的延伸的主平面; 电极的延伸主平面平行于垂直于衬底延伸主平面的法线方向设置; 另一电极的延伸主平面平行于法线方向设置; 该电极具有沿法线方向延伸的电极高度; 所述电极具有在平行于所述基板的延伸主平面的方向上完全穿过所述电极的流动通道; 所述流路具有平行于所述法线方向延伸的通道深度; 通道深度小于电极高度。

公开(公告)号：US08759926B2

公开(公告)日：2014-06-24

申请号：US13033941

申请日：2011-02-24

Applicant: Tetsuo Fujii ,  Keisuke Gotoh

Inventor： Tetsuo Fujii ,  Keisuke Gotoh

IPC: G11C11/15

CPC classification number: G01P15/0802 ,  B81B7/0006 ,  B81B2201/0235 ,  B81B2203/0307 ,  B81B2207/095 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/0877 ,  G01P2015/088 ,  H01L2224/48463

Abstract: In a semiconductor physical quantity sensor, a pattern portion including a wiring pattern as a wiring is formed on a surface of a first semiconductor substrate. A support substrate having a surface made of an electrically insulating material is prepared. The first semiconductor substrate is joined to the support substrate by bonding the pattern portion to the surface of the support substrate. Further, a sensor structure is formed in the first semiconductor substrate. The sensor structure is electrically connected to the wiring pattern. A cap is bonded to the first semiconductor substrate such that the sensor structure is hermetically sealed.

Abstract translation: 在半导体物理量传感器中，在第一半导体衬底的表面上形成包括布线图案作为布线的图案部分。 准备具有由电绝缘材料制成的表面的支撑基板。 第一半导体衬底通过将图案部分结合到支撑衬底的表面而与支撑衬底接合。 此外，在第一半导体衬底中形成传感器结构。 传感器结构电连接到布线图案。 将盖接合到第一半导体基板，使得传感器结构被气密密封。