公开(公告)号：US20240120233A1

公开(公告)日：2024-04-11

申请号：US18263548

申请日：2022-09-26

申请人： ULVAC, INC.

发明人： Tetsushi Fujinaga ,  Yukinobu Numata ,  Yasuo Ookubo ,  Daiki Shimada

IPC分类号： H01L21/687 ,  C23C14/50 ,  H01L21/683

CPC分类号： H01L21/68742 ,  C23C14/505 ,  H01L21/6831

摘要： A vacuum processing apparatus of this invention having a stage on which is disposed the to-be-processed substrate further has a lifting/rotation mechanism capable of lifting the to-be-processed substrate lying on the stage off from an upper surface of the stage to a predetermined height position so that, at this lifted position, the to-be-processed substrate is capable of rotation about a substrate center by a predetermined rotational angle. The lifting/rotation mechanism has: a driving rod built into the stage so as to be moveable up and down and also be rotatable; and a substrate supporting body having a base end plate part capable of contacting a central region, including the substrate center, of the to-be-processed substrate. The substrate supporting body further has at least two arm plate parts elongated from the base end plate part outward thereof.

公开(公告)号：US11935936B2

公开(公告)日：2024-03-19

申请号：US17055852

申请日：2019-03-28

申请人： ULVAC, INC.

发明人： Yuusuke Ujihara ,  Motoshi Kobayashi ,  Yasuhiko Akamatsu ,  Tomohiro Nagata ,  Ryouta Nakamura ,  Junichi Nitta ,  Yasuo Nakadai

IPC分类号： H01L29/49 ,  C22C21/00 ,  C22F1/04 ,  C23C14/14 ,  H01L21/285 ,  C23C14/34

CPC分类号： H01L29/49 ,  C22C21/00 ,  C22F1/04 ,  C23C14/14 ,  H01L21/285 ,  C23C14/34

摘要： [Object] It is an object of the present invention to provide an aluminum alloy film having excellent bending resistance and heat resistance, and a thin film transistor including the aluminum alloy film.
[Solving Means] In order to achieve the above-mentioned object, an aluminum alloy film according to an embodiment of the present invention includes: an Al pure metal that includes at least one type of a first additive element selected from the group consisting of Zr, Sc, Mo, Y, Nb, and Ti. A content of the first additive element is 0.01 atomic % or more and 1.0 atomic % or less. Such an aluminum alloy film has excellent bending resistance and excellent heat resistance. Further, also etching can be performed on the aluminum alloy film.

公开(公告)号：US20240069519A1

公开(公告)日：2024-02-29

申请号：US18237796

申请日：2023-08-24

申请人： ULVAC, Inc.

发明人： Yoshinori FUJII

IPC分类号： G05B19/4063

CPC分类号： G05B19/4063 ,  G05B2219/31455 ,  G05B2219/32373 ,  G05B2219/45031

摘要： An information processing device of the present invention includes a first acquisition unit, a second acquisition unit, and a machine learning processing unit. The first acquisition unit acquires total event status information. The second acquisition unit acquires time-series detection result information. The machine learning processing unit performs one or both of learning processing and determination processing. In the learning processing, a learning model is generated by performing machine learning with the time-series detection result information acquired by the second acquisition unit as an input for each piece of the total event status information acquired by the first acquisition unit. In the determination processing, a determination is performed on the generated learning model by inputting the time-series detection result information acquired by the second acquisition unit for each piece of the total event status information acquired by the first acquisition unit.

公开(公告)号：US20240058839A1

公开(公告)日：2024-02-22

申请号：US18360950

申请日：2023-07-28

申请人： ULVAC, INC.

发明人： Shunsuke SASAKI ,  Takahito KIMOTO ,  Yoshiaki FUKUDA ,  Ken MAEHIRA

IPC分类号： B05D1/28

CPC分类号： B05D1/28

摘要： A vacuum treatment apparatus including: a first wind-off roller paying out a first base material; a first wind roller winding the first base material; a main roller having an outer circumferential surface in contact with a non-film deposition surface, and winding and conveying the first base material, at least a part of the outer circumferential surface, which is uncovered with the first base material, being coated with an insulating material; a deposition source facing the outer circumferential surface of the main roller; a second wind-off roller paying out a second base material that is wound and conveyed by the main roller and covers a part of a film deposition surface of the first base material on the outer circumferential surface of the main roller; a second wind roller winding the second base material; and a power source applying a bias potential to the main roller.

公开(公告)号：US20240055239A1

公开(公告)日：2024-02-15

申请号：US18259151

申请日：2022-09-27

申请人： ULVAC, INC.

发明人： Yuta Ando ,  Akira Igari ,  Naoki Morimoto

IPC分类号： H01J37/32 ,  H01L21/02 ,  H01J37/34 ,  C23C14/06 ,  C23C14/54

CPC分类号： H01J37/32697 ,  H01L21/0217 ,  H01L21/02266 ,  H01J37/32449 ,  H01J37/3426 ,  C23C14/0652 ,  C23C14/542 ,  H01J2237/332

摘要： In a method in which inside a vacuum chamber, a silicon target and a to-be-deposited object are disposed in a positional relationship to face each other; a sputtering gas, containing therein nitrogen gas, is introduced into the vacuum chamber which is in a vacuum atmosphere; a negative potential is applied to the silicon target such that a silicon nitride film having a tensile stress is deposited in a reactive sputtering on a surface of the to-be-deposited object that is placed in an electrically floated state. The method includes steps: in which the to-be-deposited object is made to a state in which a bias potential is free from being applied thereto; and at least one of a flow ratio of the nitrogen gas to the sputtering gas, and the potential to be applied to the silicon target is controlled such that the surface of the silicon target can be maintained in a transition mode.

公开(公告)号：US11869791B2

公开(公告)日：2024-01-09

申请号：US17311872

申请日：2019-09-02

申请人： ULVAC, INC.

发明人： Dai Takagi ,  Yuu Mizushima ,  Toshiyuki Koizumi

IPC分类号： C23C14/50 ,  C23C14/56 ,  H01L21/677

CPC分类号： H01L21/6776 ,  C23C14/50 ,  C23C14/56 ,  H01L21/67715 ,  H01L21/677

摘要： The present invention provides a technology capable of inhibiting, in a vacuum processing apparatus that conveys a plurality of substrate holders along a conveying path formed to have a projected shape on a vertical surface, the projected shape being a continuous ring shape, dust from being generated during conveyance of a substrate holder. The present invention includes, in a vacuum chamber 2, an anti-sag member 35 assembled to a first drive unit 36 provided on an outer side with respect to a conveying direction of the conveying path, the vacuum chamber 2 including a conveying path formed to have a projected shape on the vertical surface, the projected shape being a continuous ring shape, a single vacuum atmosphere being formed in the vacuum chamber 2. A travel roller 54 of the anti-sag member 35 travels while being guided and supported by a guide unit 17 that is provided below a return-path-side conveying portion 33c positioned on a lower side of a substrate holder conveying mechanism 3 and extends in a second conveying direction P2, and the first drive part 36 is configured to come into contact with a first driven unit 12 of a substrate holder 11 and drive the substrate holder 11 along the conveying path in the second conveying direction P2.

公开(公告)号：US11674217B2

公开(公告)日：2023-06-13

申请号：US16070094

申请日：2017-03-23

申请人： ULVAC, INC.

发明人： Junsuke Matsuzaki ,  Hirohisa Takahashi

IPC分类号： C23C14/56 ,  C23C14/18 ,  C23C14/50 ,  H01J37/32 ,  H01J37/34 ,  H01L21/67 ,  H01L21/677 ,  H01L31/18 ,  C23C14/34 ,  H01L31/0224 ,  H01L31/0376 ,  H01L31/075 ,  H01L31/20

CPC分类号： C23C14/56 ,  C23C14/185 ,  C23C14/50 ,  H01J37/32899 ,  H01J37/3488 ,  H01L21/67173 ,  H01L21/67742 ,  H01L31/1864 ,  H01L31/1884 ,  C23C14/34 ,  H01L31/022475 ,  H01L31/03762 ,  H01L31/075 ,  H01L31/202

摘要： A method of the invention which manufactures a substrate with a transparent conductive film, includes: preparing a base body that has a top surface and a back surface and has an a-Si film coating at least one of the top surface and the back surface; and setting temperatures of the base body and the a-Si film to be in the range of 70 to 220° C. in a film formation space having a processing gas containing hydrogen, applying a sputtering voltage to a target, carrying out DC sputtering, and thereby forming the a-Si film on a transparent conductive film.

公开(公告)号：US11628565B2

公开(公告)日：2023-04-18

申请号：US17036365

申请日：2020-09-29

申请人： ULVAC, Inc.

发明人： Kazuhiro Musha ,  Hirofumi Minami ,  Takayuki Suzuki

IPC分类号： B25J9/16 ,  B25J15/00 ,  B25J13/08

摘要： A substrate transport device includes an arm, an end effector coupled to the arm, a driver configured to lift the arm so that the end effector receives a substrate, and a controller configured to control an output of the driver to change a lifting speed of the arm. While lifting the arm at a first speed to lift the end effector toward the substrate, the controller changes the lifting speed to a second speed that is lower than the first speed when the end effector starts to raise a height position of the substrate.

公开(公告)号：US11437256B2

公开(公告)日：2022-09-06

申请号：US17155766

申请日：2021-01-22

申请人： ULVAC, INC.

发明人： Yuki Kaida ,  Yousuke Oguma

IPC分类号： H01L21/673

摘要： A housing case for a crystal oscillator monitors a film thickness of a thin film to be formed on a surface of the crystal oscillator, the monitoring being performed by measuring a resonance frequency during film formation in a vacuum atmosphere. The housing case has: a case main body having disposed on an upper surface thereof a plurality of first recessed parts each being capable of housing therein a crystal oscillator in a horizontal posture with a main surface thereof facing in an up-and-down direction; a first cap body detachably mounted on the case main body from an upper side thereof; and an engaging means for engaging the first cap body relative to the case main body. The engaging means is so constructed and arranged that, in a state in which the first cap body is engaged with the case main body, the crystal oscillators housed in the first recessed parts are restrained from jumping out of position.

公开(公告)号：US20220195582A1

公开(公告)日：2022-06-23

申请号：US17601693

申请日：2020-12-22

申请人： ULVAC, Inc.

发明人： Manabu GIBO ,  Toshiharu KURAUCHI ,  Hiroshi EHIRA

IPC分类号： C23C14/32 ,  H01J37/32 ,  C23C14/04 ,  H01M10/0525 ,  H01M10/0562

摘要： The invention provides an apparatus that causes film formation particles to adhere to a surface of a substrate moving in a hermetically-sealable chamber and thereby forms a thin film thereon and includes: a plasma generator; a substrate transfer unit; a film-formation source supplier; and a film-formation region limiter. The plasma generator includes a magnet located at the other surface of the substrate and a gas supplier that supplies a film forming gas to near the surface of the substrate. The film-formation region limiter includes a shield that is located close to the surface of the substrate and has an opening. The ratio of a diameter of the opening of the shield to a diameter of the plasma generated by the plasma generator in a direction along the surface of the substrate is in a range of less than or equal to 110/100.