公开(公告)号：US20240014344A1

公开(公告)日：2024-01-11

申请号：US18250531

申请日：2020-11-13

申请人： ENKRIS SEMICONDUCTOR, INC.

发明人： Weihua Liu ,  Kai Cheng

IPC分类号： H01L33/06 ,  H01L33/32 ,  H01L33/14 ,  H01L33/00

CPC分类号： H01L33/06 ,  H01L33/325 ,  H01L33/14 ,  H01L33/007

摘要： A manufacturing method for the LED structure, including: growing a first conductive-type semiconductor layer on a substrate; growing an active layer on the first conductive-type semiconductor layer, where the active layer includes a potential well layer, an insertion layer and a potential barrier layer that are stacked, the insertion layer includes a first insertion layer and a second insertion layer that are stacked, a quantum confinement Stark effect is generated between the first insertion layer and the potential well layer, the materials of the potential well layer, the first insertion layer and the potential barrier layer are all group III-V semiconductor materials, and the material of the second insertion layer includes Si—N bonds for repairing V-type defects of the first insertion layer; and growing a second conductive-type semiconductor layer on the active layer, where the first conductive-type semiconductor layer and the second conductive-type semiconductor layer have opposite conductivity types.

公开(公告)号：US20240006552A1

公开(公告)日：2024-01-04

申请号：US18251365

申请日：2020-11-18

申请人： ENKRIS SEMICONDUCTOR, INC.

发明人： KAI CHENG

IPC分类号： H01L33/00 ,  H01L33/10

CPC分类号： H01L33/0093 ,  H01L33/105

摘要： A light-emitting device and a method for manufacturing the same are provided. The method includes: providing an epitaxial base with a first concave portion, wherein an inner surface of the first concave portion is a curved surface; epitaxially growing a light-emitting structure layer on the epitaxial base, wherein the light-emitting structure layer comprises a first surface and a second surface opposite the first surface, and the second surface protrudes towards the first concave portion; forming a first reflector layer on the first surface; and removing the epitaxial base to form a second reflector layer covering the second surface. A curved resonant cavity can be formed by the method.

公开(公告)号：US20240006551A1

公开(公告)日：2024-01-04

申请号：US18319437

申请日：2023-05-17

申请人： ENKRIS SEMICONDUCTOR, INC.

发明人： Kai Cheng

IPC分类号： H01L33/00

CPC分类号： H01L33/007

摘要： The present disclosure provides a manufacturing method of semiconductor structure, including: providing a structure to be peeled off, where the structure to be peeled off includes a first structure and a second structure, the first structure includes: a base; a first mask layer located on the base, where a first opening that exposes the base is provided in the first mask layer, and a first epitaxial layer epitaxially grown from the base to fill up the first opening; and the second structure includes: a second epitaxial layer located on the first epitaxial layer and the first mask layer; and applying force on the structure to be peeled off to fracture the second epitaxial layer and the first epitaxial layer, to peel off the first structure and make the second structure form a semiconductor structure.

公开(公告)号：US20230420605A1

公开(公告)日：2023-12-28

申请号：US18253382

申请日：2020-11-27

申请人： ENKRIS SEMICONDUCTOR, INC.

发明人： Kai Cheng

IPC分类号： H01L33/00 ,  H01L33/16

CPC分类号： H01L33/0093 ,  H01L33/16

摘要： A substrate structure, a method for manufacturing a substrate structure, a light-emitting device and a method for manufacturing a light-emitting device are provided. The substrate structure may include a base, a mask layer, and an epitaxial structure. The mask layer is provided on the base, where the mask layer is provided with an opening for exposing the base. The epitaxial structure is provided in the opening, where a material of the mask layer is different from a material of the epitaxial structure.

公开(公告)号：US11848205B2

公开(公告)日：2023-12-19

申请号：US17143902

申请日：2021-01-07

申请人： ENKRIS SEMICONDUCTOR, INC.

发明人： Kai Cheng ,  Kai Liu

IPC分类号： H01L21/02 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778

CPC分类号： H01L21/02502 ,  H01L21/0242 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/02422 ,  H01L21/02458 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/7786

摘要： A semiconductor structure and a manufacturing method therefor are provided by embodiments of the present application. A buffer layer is disposed on a substrate layer, and the buffer layer includes a first buffer layer and a second buffer layer. By doping a transition metal in the first buffer layer, a deep level trap may be formed to capture background electrons, and diffusion of free electrons toward the substrate may also be avoided. In the second buffer layer, by decreasing a doping concentration of the transition metal or not doping intentionally the transition metal, a tailing effect is avoided and current collapse is prevented. By doping periodically C in the buffer layer, C may be as an acceptor impurity to compensate the background electrons, and then a concentration of the background electrons is reduced.

公开(公告)号：US20230299100A1

公开(公告)日：2023-09-21

申请号：US17778963

申请日：2021-03-18

申请人： ENKRIS SEMICONDUCTOR, INC.

发明人： Kai Cheng

IPC分类号： H01L27/146 ,  G09G3/20

CPC分类号： H01L27/1461 ,  G09G3/2003 ,  H01L27/14645 ,  G09G2360/14

摘要： The present disclosure provides a light sensing unit, a gallium nitride_(GaN)-based image sensor, and a display apparatus thereof. The light sensing unit includes: red, green, and blue light sensing sub-units, where materials of a red-light sensing layer of each of the light sensing sub-units are GaN-based materials containing indium(In). The materials of the light sensing layers may contain different contents of In, such that the light sensing sub-units are enabled to generate or not generate light sensing electrical signals according to different wave lengths of received light. During a GaN-based material growth process, the contents of In in different regions are controlled to prepare the light sensing sub-units at the same time to increase integration degrees of the light sensing unit, the GaN-based image sensor, and the display apparatus containing the light sensing unit to achieve miniaturization.

公开(公告)号：US20230290905A1

公开(公告)日：2023-09-14

申请号：US17772414

申请日：2021-04-15

申请人： ENKRIS SEMICONDUCTOR, INC.

发明人： Kai Cheng ,  Liyang Zhang

IPC分类号： H01L33/32 ,  H01L33/62 ,  H01L29/20 ,  H01L33/16 ,  H01L33/00 ,  H01L29/66 ,  H01L29/778

CPC分类号： H01L33/32 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7786 ,  H01L33/007 ,  H01L33/16 ,  H01L33/62 ,  H01L2933/0066

摘要： A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure may include: a first epitaxial layer disposed on a substrate; a bonding layer disposed on the first epitaxial layer (where the bonding layer is provided with a first through-hole to expose the first epitaxial layer); a silicon substrate disposed on a side of the bonding layer away from the first epitaxial layer (where the first epitaxial layer is bonded to the silicon substrate by the bonding layer, the silicon substrate is provided with a through-silicon-via, and the through-silicon-via communicates with the first through-hole); a silicon device disposed on the silicon substrate; and a second epitaxial layer disposed on the first epitaxial layer exposed by the first through-hole. The present disclosure can improve the quality of the second epitaxial layer, and realize the integration of a silicon device and a III-V semiconductor device.

公开(公告)号：US20230290892A1

公开(公告)日：2023-09-14

申请号：US17788967

申请日：2021-03-05

申请人： ENKRIS SEMICONDUCTOR, INC.

发明人： Kai Cheng

IPC分类号： H01L29/88 ,  H01L29/20 ,  H01L29/66

CPC分类号： H01L29/882 ,  H01L29/2003 ,  H01L29/66219

摘要： The present disclosure provides a resonant tunneling diode and a manufacturing method thereof. The resonant tunneling diode includes: a first barrier layer; a second barrier layer; and a potential well layer between the first barrier layer and the second barrier layer, a material of the first barrier layer being AlxInyN1-x-y, 1>x>0, 1>y>0, and/or a material of the second barrier layer being AlmInnN1-m-n, 1>m>0, 1>n>0, and a material of the well layer including a gallium element.

公开(公告)号：US20230261135A1

公开(公告)日：2023-08-17

申请号：US18302232

申请日：2023-04-18

申请人： ENKRIS SEMICONDUCTOR, INC.

发明人： Weihua LIU ,  Kai CHENG

IPC分类号： H01L33/06 ,  H01L33/32

CPC分类号： H01L33/06 ,  H01L33/325 ,  H01L27/156

摘要： A multi-quantum well structure includes at least one lamination layer, each lamination layer includes a first film layer, an insertion layer and a second film layer, and the at least one lamination layer includes a plurality of lamination layers which are stacked with each other. The insertion layer is located between the first film layer and the second film layer. The insertion layer includes at least one of a monomer structure and a superlattice structure, the first film layer is doped with elements of In, Ga and N, the insertion layer is doped with elements of Al, Ga and N, and the second film layer is doped with elements of Ga and N. The multi-quantum well structure has ability to emit a light with a longer wavelength, and defects and other undesirable phenomena, caused by growing the first film layer with low-temperature epitaxy, may be prevented.

公开(公告)号：US20230154785A1

公开(公告)日：2023-05-18

申请号：US17916635

申请日：2020-08-13

申请人： ENKRIS SEMICONDUCTOR, INC.

发明人： Kai Cheng

IPC分类号： H01L21/762 ,  H01L21/76 ,  H01L29/20 ,  H01L29/778

CPC分类号： H01L21/76251 ,  H01L21/7605 ,  H01L29/2003 ,  H01L29/7786

摘要： An N-face polar GaN-based device, a composite substrate thereof, and a method of manufacturing the composite substrate are provided in the present disclosure. The N-face polar GaN-based composite substrate includes: a semiconductor substrate, an insulating layer on the semiconductor substrate and a GaN-based material layer on upper surface of the insulating layer; a surface of the GaN-based material layer attached to the insulating layer is Ga-face, and a surface of the GaN-based material layer away from the insulating layer is an N-face. In the present disclosure, the transfer technology is adopted to replace the direct epitaxial growth, which overcomes the difficult growth process, and the N-face polar GaN-based composite substrate with better quality can be obtained.