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公开(公告)号：US20240363805A1
公开(公告)日：2024-10-31
申请号：US18485547
申请日：2023-10-12
发明人： Kai CHENG
CPC分类号： H01L33/32 , H01L33/007 , H01L33/12
摘要： Disclosed are a semiconductor structure and a manufacturing method therefor. The semiconductor structure includes a first substrate; a mask layer, located on the first substrate; where the mask layer is provided with a window exposing the first substrate, the window includes an open end, and an area of an orthographic projection of the open end on a plane where the first substrate is located is less than an area of an orthographic projection of the window on the plane where the first substrate is located. When a first epitaxial layer is epitaxially grown on the second substrate, a dislocation of the first epitaxial layer terminates at the sidewall, the dislocation may not continue to extend along with a growth of the first epitaxial layer, so that a dislocation density of the semiconductor structure may be reduced, and device characteristic may be improved.
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2.发明公开公开(公告)号：US20240347601A1
公开(公告)日：2024-10-17
申请号：US18634480
申请日：2024-04-12
发明人： Kai CHENG
CPC分类号： H01L29/1608 , H01L21/02447 , H01L21/02529 , H01L21/02598 , H01L29/04
摘要： The present disclosure provides a composite substrate including: a support layer; and a SiC monocrystalline layer on the support layer, where the SiC monocrystalline layer includes a first superjunction structure that includes first P-type layers and first N-type layers, and the first P-type layers and the first N-type layers extend inward along a thickness direction of the SiC monocrystalline layer from a surface of the SiC monocrystalline layer far from the support layer, and are alternately distributed in a direction parallel to a plane of the SiC monocrystalline layer.
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公开(公告)号：US20240313053A1
公开(公告)日：2024-09-19
申请号：US18596380
申请日：2024-03-05
发明人： Kai CHENG
IPC分类号： H01L29/06 , H01L21/04 , H01L21/32 , H01L21/4757 , H01L29/16 , H01L29/20 , H01L29/423 , H01L29/66
CPC分类号： H01L29/0684 , H01L21/046 , H01L21/32 , H01L21/47573 , H01L29/1608 , H01L29/2003 , H01L29/4236 , H01L29/66068
摘要： This disclosure provides a method for manufacturing a semiconductor structure, which includes: providing a substrate, forming a mask layer on the substrate, where the mask layer is provided with an opening exposing the substrate; by using the mask layer as a mask, selectively growing a first semiconductor epitaxial layer at the opening, where the first semiconductor epitaxial layer does not cover a surface of the mask layer away from the substrate; removing mask layer, and forming a second semiconductor epitaxial layer on the substrate and the first semiconductor epitaxial layer by performing secondary epitaxy; where the second semiconductor epitaxial layer covers a surface of the first semiconductor epitaxial layer away from the substrate, and a conductivity type of the second semiconductor epitaxial layer is opposite to a conductivity type of the first semiconductor epitaxial layer; performing ion implantation to the second semiconductor epitaxial layer to form a third semiconductor epitaxial layer, where the third semiconductor epitaxial layer is located on a side of the first semiconductor epitaxial layer away from the substrate, the third semiconductor epitaxial layer is connected to the first semiconductor epitaxial layer, and a conductivity type of the third semiconductor epitaxial layer is same as the conductivity type of the first semiconductor epitaxial layer.
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公开(公告)号：US12094958B2
公开(公告)日：2024-09-17
申请号：US17622974
申请日：2019-12-05
发明人： Kai Cheng
IPC分类号： H01L29/732 , H01L21/02 , H01L29/20 , H01L29/66
CPC分类号： H01L29/7325 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/6631
摘要： The present disclosure provides a semiconductor structure and a manufacturing method thereof. In the manufacturing method, a first P-type semiconductor layer is provided, and an N-type semiconductor layer and a second P-type semiconductor layer are formed in sequence on the first P-type semiconductor layer. The first P-type semiconductor layer, the N-type semiconductor layer and the second P-type semiconductor layer all include a GaN-based material. When the first P-type semiconductor layer is provided, its upper surface is controlled to be a Ga surface; when the N-type semiconductor layer is formed, its upper surface is controlled to be an N surface; when the second P-type semiconductor layer is formed, its upper surface is controlled to be an N surface.
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公开(公告)号：US12068409B2
公开(公告)日：2024-08-20
申请号：US17409419
申请日：2021-08-23
IPC分类号： H01L29/78 , H01L29/20 , H01L29/66 , H01L29/778
CPC分类号： H01L29/7786 , H01L29/2003 , H01L29/66462 , H01L29/7842
摘要： Disclosed are a semiconductor structure and a manufacturing method therefor, solving the problem that it is difficult for an existing semiconductor structure to deplete a carrier concentration of a channel under a gate so as to achieve an enhancement-mode device. The semiconductor structure comprises: a channel layer and a barrier layer stacked in sequence. A gate region is defined on a surface of the barrier layer; a plurality of trenches formed in the gate region. The plurality of trenches are extended into the channel layer; and a stress applying material filled in the plurality of trenches. A lattice constant of the stress applying material is greater than that of the channel layer.
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公开(公告)号：US20240222400A1
公开(公告)日：2024-07-04
申请号：US18556873
申请日：2021-06-18
发明人： Yuchao CHEN , Kai Cheng
IPC分类号： H01L27/146
CPC分类号： H01L27/1461 , H01L27/14612 , H01L27/14636
摘要： The present application provides a frontside-illuminated image sensor, including a substrate, a photosensitive unit, and a lens structure. The substrate has a plurality of charge storage regions; The photosensitive unit is above the substrate, and the photosensitive unit includes a plurality of photosensitive sub-units. Each photosensitive sub-unit includes a red photosensitive layer, a green photosensitive layer, and a blue photosensitive layer that are stacked. One photosensitive sub-unit is electrically connected with one charge storage region; the lens structure is on a side of the photosensitive unit away from the substrate.
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公开(公告)号：US20240213404A1
公开(公告)日：2024-06-27
申请号：US18319471
申请日：2023-05-17
发明人： Liyang Zhang , Kai Cheng
CPC分类号： H01L33/18 , H01L33/06 , H01L33/42 , H01L33/502 , H01L33/60
摘要： A light-emitting device and a method for manufacturing a light-emitting device are provided. The light-emitting device includes: a substrate, provided with at least one light guide channel through the substrate, wherein each of the at least one light guide channel comprises a first opening and a second opening opposite to the first opening, an area of a section of the second opening is greater than an area of a section of the first opening, the substrate comprises a first substrate and a second substrate stacked, and the second substrate is configured to control a direction of light output through the light guide channel; and a light-emitting structure, provided at a side of the substrate where the first opening is located, wherein the light-emitting structure comprises at least one light-emitting unit, each of the at least one light guide channel corresponds to at least one light-emitting unit.
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8.发明公开公开(公告)号：US20240195382A1
公开(公告)日：2024-06-13
申请号：US18457847
申请日：2023-08-29
发明人： Kai CHENG
CPC分类号： H03H9/02897 , H03H3/08 , H03H9/02834 , H03H9/02866 , H03H9/25
摘要： Disclosed are a piezoelectric plate and a manufacturing method therefor, an SAW device and a manufacturing method therefor. The manufacturing method for the piezoelectric plate provided in the present disclosure includes: sequentially growing a piezoelectric material layer and a protective layer on a first substrate, bonding the protective layer to a second substrate, and then peeling off the first substrate to form a piezoelectric plate including the second substrate, the protective layer and the piezoelectric material layer from bottom to top. A lattice constant of the protective layer is greater than a lattice constant of the piezoelectric material layer. Probability of occurrence of a crack in the piezoelectric material layer may be reduced by the protective layer. Stress generated by lattice mismatch and thermal mismatch is released by transfer of the substrate, so that an occurrence of a crack of the piezoelectric material layer may be avoided.
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公开(公告)号：US20240178281A1
公开(公告)日：2024-05-30
申请号：US18319379
申请日：2023-05-17
发明人： Kai CHENG
IPC分类号： H01L29/20 , H01L29/66 , H01L29/778
CPC分类号： H01L29/2003 , H01L29/66462 , H01L29/7787
摘要： Disclosed are a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a substrate, a channel layer, a barrier layer and a P-type semiconductor layer stacked sequentially. The barrier layer includes a first region and an oxygen-doped region, an oxygen concentration of the oxygen-doped region is higher than that of the first region, and a projection of the oxygen-doped region on the substrate at least partially overlaps with a projection of the P-type semiconductor layer on the substrate. When the semiconductor device is in an off state, 2DEG may be depleted to obtain an enhancement-mode device, and the oxygen-doped region with a larger unit cell parameter and a wider band gap is obtained by performing an oxygen doping process. Under an electric field, an energy band between the barrier layer and the P-type semiconductor bends more, which increases a barrier height, reduces leakage current, and improves power characteristics.
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公开(公告)号：US20240096916A1
公开(公告)日：2024-03-21
申请号：US18157009
申请日：2023-01-19
发明人： Yuchao CHEN , Kai CHENG
IPC分类号： H01L27/146 , H04N23/741
CPC分类号： H01L27/14621 , H04N23/741
摘要： Disclosed is an image sensor. The image sensor includes at least one photosensitive unit including at least two photosensitive layers stacked and not completely overlapped, a region where each photosensitive layer is not overlapped with other photosensitive layers being configured to arrange an electrode wire, and photosensitive component contents of the at least two photosensitive layers being different. According to the present disclosure, a wavelength range of sensible light of each photosensitive unit may be enlarged, so that more image details may be recorded, images with a high dynamic range may be generated, and people may experience a visual effect close to a real environment. In addition, as there is no need to reduce a photosensitive area of the photosensitive layer for arranging the electrode wires, the photosensitive area of the photosensitive layer is increased and thereby a dynamic range of the image sensor is improved.
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