公开(公告)号：US20240145469A1

公开(公告)日：2024-05-02

申请号：US17974005

申请日：2022-10-26

Applicant: GlobalFoundries U.S. Inc.

Inventor： Santosh SHARMA ,  Johnatan A. KANTAROVSKY

IPC: H01L27/088 ,  H01L27/10 ,  H01L29/20

CPC classification number: H01L27/0883 ,  H01L27/101 ,  H01L29/2003

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a depletion mode device with a programmable element used for chip programming and circuit configuration and methods of manufacture and operation. In particular, the structure includes a programmable element on an active layer of semiconductor material, and a depletion mode device comprising a dual gate connected to the programmable element.

公开(公告)号：US20240114682A1

公开(公告)日：2024-04-04

申请号：US17958806

申请日：2022-10-03

Applicant: GlobalFoundries Singapore Pte. Ltd.

Inventor： Xinshu CAI ,  Shyue Seng TAN ,  Eng Huat TOH

IPC: H01L27/112

CPC classification number: H01L27/11206

Abstract: The present disclosure relates to a structure which includes a semiconductor substrate, a recessed shallow trench isolation structure within the semiconductor substrate, and a gate structure provided at least partially over the recessed shallow isolation structure.

公开(公告)号：US11949004B2

公开(公告)日：2024-04-02

申请号：US17533882

申请日：2021-11-23

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Judson R. Holt ,  Vibhor Jain ,  Alexander M. Derrickson

IPC: H01L29/739 ,  H01L29/06 ,  H01L29/66

CPC classification number: H01L29/7393 ,  H01L29/0649 ,  H01L29/66325

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. The structure includes: an extrinsic base region; an emitter region on a first side of the extrinsic base region; a collector region on a second side of the extrinsic base region; and a gate structure comprising a gate oxide and a gate control in a same channel region as the extrinsic base region.

公开(公告)号：US20240103237A1

公开(公告)日：2024-03-28

申请号：US17933199

申请日：2022-09-19

Applicant: GlobalFoundries U.S. Inc.

Inventor： Zhuojie Wu ,  Seungman Choi

IPC: G02B6/42

CPC classification number: G02B6/423 ,  G02B6/4206 ,  G02B6/424 ,  G02B6/4274

Abstract: A photonic integrated circuit (PIC) structure includes a substrate, and a cavity defined in the substrate, the cavity including a shoulder at a side of the cavity. A plurality of z-stop supports for an optical device are also included. Each z-stop support of the plurality of z-stop supports is on a support portion of the shoulder. A wire extends over the side of the cavity and between at least two z-stop supports of the plurality of z-stop supports. An optical device is positioned on the plurality of z-stop supports in the cavity and electrically coupled to the wire. Electrical connections between z-stop supports allows larger sized electrical connections to the optical device to mitigate electromigration issues, and increased options for electrical connections.

公开(公告)号：US11942423B2

公开(公告)日：2024-03-26

申请号：US17343101

申请日：2021-06-09

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Venkata Narayana Rao Vanukuru ,  Zhong-Xiang He

IPC: H01L23/522 ,  H01F17/00 ,  H01F41/04 ,  H01L23/528

CPC classification number: H01L23/5227 ,  H01F17/0013 ,  H01F41/041 ,  H01L23/5283

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to series inductors and methods of manufacture. A structure includes a plurality of wiring levels each of which include a wiring structure connected in series to one another. A second wiring level being located above a first wiring level of the plurality of wiring levels. A wiring structure on the second wiring level being at least partially outside boundaries of the wiring structure of the first wiring level.

公开(公告)号：US11942325B2

公开(公告)日：2024-03-26

申请号：US17647195

申请日：2022-01-06

Applicant: GlobalFoundries U.S. Inc.

Inventor： Ketankumar Harishbhai Tailor

IPC: H01L27/06 ,  H01L21/02 ,  H01L21/266 ,  H01L21/3215 ,  H01L29/66

CPC classification number: H01L21/266 ,  H01L21/0257 ,  H01L21/3215 ,  H01L27/0617 ,  H01L29/66803

Abstract: A transistor structure is disclosed. The transistor structure includes a dielectric layer that has a thinner portion over a first doped well and a second doped well, and a thicker portion adjacent the thinner portion and over the second doped well. The thicker portion has a height greater than the thinner portion above the doped wells. The transistor includes a first gate structure on the thinner portion and a second gate structure on the thicker portion of the dielectric layer. The transistor may include a third gate structure on the thicker portion.

公开(公告)号：US11935946B2

公开(公告)日：2024-03-19

申请号：US17849867

申请日：2022-06-27

Applicant: GlobalFoundries U.S. Inc.

Inventor： Shesh Mani Pandey ,  Souvick Mitra ,  Anindya Nath

IPC: H01L29/745 ,  H01L29/66

CPC classification number: H01L29/7455 ,  H01L29/66363

Abstract: Structures for a silicon-controlled rectifier and methods of forming a structure for a silicon-controlled rectifier. The structure comprises a semiconductor substrate, a dielectric layer on the semiconductor substrate, and a first well and a second well in the semiconductor substrate beneath the dielectric layer. The first well has a first conductivity type, the second well has a second conductivity type opposite to the first conductivity type, and the second well adjoins the first well along a p-n junction. The structure further comprises a first terminal and a second terminal above the dielectric layer, a first connection extending through the dielectric layer from the first terminal to the first well, and a second connection extending through the dielectric layer from the second terminal to the second well.

公开(公告)号：US11935927B2

公开(公告)日：2024-03-19

申请号：US17684321

申请日：2022-03-01

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Hong Yu ,  Vibhor Jain

IPC: H01L29/417 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66 ,  H01L29/735 ,  H01L29/737

CPC classification number: H01L29/41708 ,  H01L29/0821 ,  H01L29/1008 ,  H01L29/66242 ,  H01L29/735 ,  H01L29/737 ,  H01L29/0808 ,  H01L29/0817

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a bipolar transistor with a collector contact and methods of manufacture. The structure includes: a lateral bipolar transistor which includes an emitter, a base and a collector; an emitter contact to the emitter; a base contact to the base; and a collector contact to the collector and extending to an underlying substrate underneath the collector.

公开(公告)号：US11935678B2

公开(公告)日：2024-03-19

申请号：US17117258

申请日：2020-12-10

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： Zishan Ali Syed Mohammed ,  Lulu Peng ,  Chor Shu Cheng ,  Yong Chau Ng ,  Lawrence Selvaraj Susai

IPC: H01F27/28 ,  H01F17/00 ,  H01F27/02 ,  H01L49/02

CPC classification number: H01F17/0013 ,  H01F27/022 ,  H01F27/28 ,  H01L28/10

Abstract: An inductive device may be provided, including a first winding layer, a second winding layer arranged over the first winding layer and connected to the first winding layer to form a plurality of turns around a first axis, and a magnetic core arranged vertically between the first winding layer and the second winding layer. The magnetic core may include a portion entirely over the first winding layer and entirely under the second winding layer, where this portion may include a magnetic segment and a non-magnetic segment arranged laterally adjacent to each other along the first axis.

公开(公告)号：US20240085626A1

公开(公告)日：2024-03-14

申请号：US17941055

申请日：2022-09-09

Applicant: GlobalFoundries U.S. Inc.

Inventor： Yusheng Bian

IPC: G02B6/126 ,  G02B6/122 ,  G02B6/13

CPC classification number: G02B6/126 ,  G02B6/1228 ,  G02B6/13 ,  G02B2006/12061

Abstract: Structures for a polarization rotator and methods of forming a structure for a polarization rotator. The structure comprises a first waveguide core having a first section, a second section, a first terminating end, and a second terminating end opposite to the first terminating end. The first and second sections of the first waveguide core are arranged between the first terminating end and the second terminating end. The structure further comprises a second waveguide core including a first tapered section having a first overlapping arrangement with the first section of the first waveguide core and a second tapered section having a second overlapping arrangement with the second section of the first waveguide core. The first waveguide core comprises a first material, and the second waveguide core comprises a second material different from the first material.