INFRARED RAY BLOCKING MULTI-LAYERED STRUCTURE INSULATING FILM HAVING THERMAL ANISOTROPY
    91.
    发明申请
    INFRARED RAY BLOCKING MULTI-LAYERED STRUCTURE INSULATING FILM HAVING THERMAL ANISOTROPY 有权
    红外线阻塞多层结构绝热膜

    公开(公告)号:US20130251981A1

    公开(公告)日:2013-09-26

    申请号:US13849916

    申请日:2013-03-25

    Abstract: The present invention relates to an infrared blocking multi-layered insulating film having thermal anisotropy, the film comprising an infrared absorption layer comprising at least one of perovskite oxide dispersed sol, metallic oxide dispersed sol, and ITO or ATO; a thermal resistance layer located on or above one surface of the infrared absorption layer; and an emission layer located on or above another surface of the infrared absorption layer. An infrared blocking multi-layered insulating film having thermal anisotropy according to the present invention may control heat flow, thereby generating excellent insulating effect.

    Abstract translation: 本发明涉及具有热各向异性的红外线阻挡多层绝缘膜,该膜包含红外吸收层,该红外线吸收层包含至少一种钙钛矿氧化物分散溶胶,金属氧化物分散溶胶和ITO或ATO; 位于所述红外吸收层的一个表面上或上方的热电阻层; 以及位于红外线吸收层的另一表面上或上方的发射层。 根据本发明的具有热各向异性的红外阻挡多层绝缘膜可以控制热流,从而产生优异的绝缘效果。

    BIPV-APPLICABLE HIGH-POWER SHINGLED PHOTOVOLTAIC MODULE AND MANUFACTURING METHOD THEREFOR

    公开(公告)号:US20250040260A1

    公开(公告)日:2025-01-30

    申请号:US18715734

    申请日:2022-11-22

    Abstract: Disclosed are a BIPV-applicable high-power shingled photovoltaic module and a manufacturing method therefor, the module comprising: a solar panel having a shingled array structure; a first sealant stacked on the solar panel so as to protect the solar panel; a second sealant stacked under the solar panel in order to protect the solar panel; a front cover through which the sunlight passes, and which is stacked on the first sealant so as to protect the first sealant; and a first back sheet stacked under the second sealant in order to protect the solar panel from the outside environment, and thus aesthetic impression and reflectance reduction of a high-power shingled photovoltaic module are increased so that use as an external design element of a building is possible.

    CARRIER-SELECTIVE CONTACT JUNCTION SILICON SOLAR CELL AND MANUFACTURING METHOD THEREFOR

    公开(公告)号:US20230307569A1

    公开(公告)日:2023-09-28

    申请号:US18327071

    申请日:2023-06-01

    Abstract: A method of manufacturing a carrier-selective contact junction silicon solar cell includes: preparing a conductive silicon substrate; forming a first passivation layer and a second passivation layer on and under the conductive silicon substrate, respectively; forming an electron-selective contact layer under the second passivation layer; forming a hole-selective contact layer on the first passivation layer; forming an upper transparent electrode on the hole-selective contact layer; forming an upper metal electrode on the upper transparent electrode; and forming a lower metal electrode under the electron-selective contact layer. In forming the hole-selective contact layer, a sandwich-structured multilayer film is formed by depositing a copper iodide thin film on a top surface and a bottom surface of an iodine thin film, and a single-film copper iodide thin film is formed by low-temperature annealing the sandwich-structured multilayer film.

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