公开(公告)号：US20110042771A1

公开(公告)日：2011-02-24

申请号：US12542970

申请日：2009-08-18

申请人： Wu-Song Huang ,  Martin Glodde ,  Dario L. Goldfarb ,  Wai-Kin Li ,  Sen Liu ,  Libor Vyklicky

发明人： Wu-Song Huang ,  Martin Glodde ,  Dario L. Goldfarb ,  Wai-Kin Li ,  Sen Liu ,  Libor Vyklicky

IPC分类号： H01L31/0216 ,  G03F7/004 ,  G03F7/20

CPC分类号： G03F7/0388 ,  G03F7/038 ,  G03F7/091 ,  G03F7/11 ,  H01L51/447

摘要： A curable liquid formulation comprising: (i) one or more near-infrared absorbing polymethine dyes; (ii) one or more crosslinkable polymers; and (iii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.

摘要翻译： 一种可固化液体制剂，其包含：（i）一种或多种近红外吸收聚甲炔染料; （ii）一种或多种可交联聚合物; 和（iii）一种或多种浇铸溶剂。 本发明还涉及由可固化液体制剂的交联形式组成的固体近红外吸收膜。 本发明还涉及一种含有固体近红外线吸收膜的涂层的微电子衬底，以及在近红外吸收膜位于微电子衬底之间的情况下，用于图案化涂覆在微电子衬底上的光刻胶层的方法 和光刻胶膜。

公开(公告)号：US20100327445A1

公开(公告)日：2010-12-30

申请号：US12491372

申请日：2009-06-25

申请人： Ronald Filippi ,  Wai-kin Li ,  Ping-Chuan Wang

发明人： Ronald Filippi ,  Wai-kin Li ,  Ping-Chuan Wang

IPC分类号： H01L23/535 ,  H01L21/768

CPC分类号： H01L23/5226 ,  H01L21/76802 ,  H01L21/76847 ,  H01L21/76852 ,  H01L23/5286 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

摘要： An embodiment of the invention provides a semiconductor structure, which may include a stud of a first conductive material formed inside a dielectric layer; a via of a second conductive material having a bottom and sidewalls with the bottom and the sidewalls being covered by a conductive liner, and the bottom being formed directly on top of the stud and being in contact with the via through the conductive liner; and one or more conductive paths of a third conductive material connecting to the via through the conductive liner at the sidewalls of said the. A method of making the semiconductor structure is also provided.

摘要翻译： 本发明的一个实施例提供一种半导体结构，其可以包括形成在电介质层内部的第一导电材料的支柱; 具有底部的第二导电材料的通孔和具有底部的侧壁，并且侧壁被导电衬垫覆盖，并且底部直接形成在螺柱的顶部上并且通过导电衬套与通孔接触; 以及一个或多个第三导电材料的导电路径，所述第三导电材料在所述导电衬套的侧壁处通过所述导电衬套连接到所述通孔。 还提供了制造半导体结构的方法。

公开(公告)号：US07838200B2

公开(公告)日：2010-11-23

申请号：US12356187

申请日：2009-01-20

申请人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-kin Li ,  Pushkara R. Varanasi ,  Sen Liu

发明人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-kin Li ,  Pushkara R. Varanasi ,  Sen Liu

IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/20 ,  G03F7/26 ,  G03F7/40

CPC分类号： G03F7/0045 ,  G03F7/0035 ,  G03F7/0397 ,  G03F7/40

摘要： A method and a resist composition. The resist composition includes a polymer having repeating units having a lactone moiety, a thermal base generator capable of generating a base and a photosensitive acid generator. The polymer has the properties of being substantially soluble in a first solvent and becoming substantially insoluble after heating the polymer. The method includes forming a film of a photoresist including a polymer, a thermal base generator capable of releasing a base, a photosensitive acid generator, and a solvent. The film is patternwise imaged. The imaging includes exposing the film to radiation, resulting in producing an acid catalyst. The film is developed in an aqueous base, resulting in removing base-soluble regions and forming a patterned layer. The patterned layer is baked above the temperature, resulting in the thermal base generator releasing a base within the patterned layer and the patterned layer becoming insoluble in the solvent.

公开(公告)号：US07803521B2

公开(公告)日：2010-09-28

申请号：US11942062

申请日：2007-11-19

申请人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-Kin Li ,  Pushkara R. Varanasi

发明人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-Kin Li ,  Pushkara R. Varanasi

IPC分类号： G03F7/30

CPC分类号： G03F7/0048 ,  G03F7/0035 ,  G03F7/0397 ,  G03F7/40

摘要： A photoresist composition and methods using the photoresist composition in multiple exposure/multiple layer processes. The photoresist composition includes a polymer comprising repeat units having a hydroxyl moiety; a photoacid generator; and a solvent. The polymer when formed on a substrate is substantially insoluble to the solvent after heating to a temperature of about 150° C. or greater. One method includes forming a first photoresist layer on a substrate, patternwise exposing the first photoresist layer, forming a second non photoresist layer on the substrate and patterned first photoresist layer. Another method includes forming a first photoresist layer on a substrate, patternwise exposing the first photoresist layer, forming a second photoresist layer on the substrate and patterned first photoresist layer and patternwise exposing the second photoresist layer.

摘要翻译： 光致抗蚀剂组合物和在多次曝光/多层工艺中使用光致抗蚀剂组合物的方法。 光致抗蚀剂组合物包括包含具有羟基部分的重复单元的聚合物; 光致酸发生器; 和溶剂。 形成在基材上的聚合物在加热至约150℃或更高的温度之后基本上不溶于溶剂。 一种方法包括在衬底上形成第一光致抗蚀剂层，图案地暴露第一光致抗蚀剂层，在衬底上形成第二非光致抗蚀剂层并且形成图案化的第一光致抗蚀剂层。 另一种方法包括在衬底上形成第一光致抗蚀剂层，以图形方式暴露第一光致抗蚀剂层，在衬底上形成第二光致抗蚀剂层并图案化的第一光致抗蚀剂层和图案地曝光第二光致抗蚀剂层。

公开(公告)号：US20100209853A1

公开(公告)日：2010-08-19

申请号：US12371956

申请日：2009-02-17

申请人： Kuang-Jung Chen ,  Wai-Kin Li

发明人： Kuang-Jung Chen ,  Wai-Kin Li

IPC分类号： G03F7/26

CPC分类号： G03F7/40 ,  G03F7/0035

摘要： A method forms a first patterned mask (comprising rectangular features and/or rounded openings) on a planar surface and forms a second patterned mask on the first patterned mask and the planar surface. The second patterned mask covers protected portions of the first patterned mask and the second patterned mask reveals exposed portions of the first patterned mask. The method treats the exposed portions of the first patterned mask with a chemical treatment that reduces the size of the exposed portions to create an altered first patterned mask.

摘要翻译： 一种方法在平坦表面上形成第一图案化掩模（包括矩形特征和/或圆形开口）并且在第一图案化掩模和平面表面上形成第二图案化掩模。 第二图案化掩模覆盖第一图案化掩模的受保护部分，并且第二图案化掩模揭示第一图案化掩模的暴露部分。 该方法通过减少暴露部分的尺寸以产生改变的第一图案化掩模的化学处理来处理第一图案化掩模的暴露部分。

公开(公告)号：US20100009298A1

公开(公告)日：2010-01-14

申请号：US12170722

申请日：2008-07-10

申请人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-Kin Li

发明人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-Kin Li

IPC分类号： G03F7/20

CPC分类号： G03F7/2024

摘要： Methods are presented of forming sub-lithographic patterns using double exposure. One method may include providing a photoresist layer over a layer to be patterned; exposing the photoresist layer using a first mask having a first opening; developing the photoresist layer to transfer the first opening into the photoresist layer, forming a boundary in the photoresist layer about the transferred first opening that is hardened; exposing the photoresist layer using a second mask having a second opening that overlaps the boundary; and developing the photoresist layer to transfer the second opening into the photoresist layer, leaving the boundary, wherein the boundary has a sub-lithographic dimension.

摘要翻译： 提出了使用双重曝光形成亚光刻图案的方法。 一种方法可以包括在待图案化的层上提供光致抗蚀剂层; 使用具有第一开口的第一掩模曝光光致抗蚀剂层; 显影所述光致抗蚀剂层以将所述第一开口转移到所述光致抗蚀剂层中，在所述光致抗蚀剂层周围形成围绕被硬化的转移的第一开口的边界; 使用具有与边界重叠的第二开口的第二掩模曝光光致抗蚀剂层; 并且显影所述光致抗蚀剂层以将所述第二开口转移到所述光致抗蚀剂层中，留下所述边界，其中所述边界具有亚光刻尺寸。

公开(公告)号：US07560222B2

公开(公告)日：2009-07-14

申请号：US11554877

申请日：2006-10-31

申请人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-Kin Li ,  Yi-Hsiung S. Lin

发明人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-Kin Li ,  Yi-Hsiung S. Lin

IPC分类号： G03F7/36 ,  G03F7/34

CPC分类号： G03F7/0758 ,  G03F7/0045

摘要： A resist polymer that has nano-scale patterns located therein that are in the form of sub lithographic hollow pores (or openings) that are oriented in a direction that is substantially perpendicular with that of its major surfaces (top and bottom) is provided. Such a resist polymer having the nano-scale patterns is used as an etch mask transferring nano-scale patterns to an underlying substrate such as, for example, dielectric material. After the transferring of the nano-scale patterns into the substrate, nano-scale voids (or openings) having a width of less than 50 nm are created in the substrate. The presence of the nano-scale voids in a dielectric material lowers the dielectric constant, k, of the original dielectric material. In accordance with an aspect of the present invention, the inventive resist polymer comprises a copolymer that includes a first monomer unit (A) that contains a Si-containing component, and a second monomer unit (B) that contains an organic component, wherein said two monomer units (A and B) have different etch rates.

摘要翻译： 提供具有位于其中的纳米级图案的抗蚀剂聚合物，其为沿与其主表面（顶部和底部）基本垂直的方向取向的亚光刻中空孔（或开口）的形式。 具有纳米尺度图案的这种抗蚀剂聚合物被用作将纳米尺度图案转移到诸如介电材料的下层基底的蚀刻掩模。 在将纳米尺度图案转移到基底中之后，在基底中产生宽度小于50nm的纳米级空隙（或开口）。 电介质材料中纳米尺度空隙的存在降低了原始电介质材料的介电常数k。 根据本发明的一个方面，本发明的抗蚀剂聚合物包括包含含有含Si组分的第一单体单元（A）和含有有机组分的第二单体单元（B）的共聚物，其中所述 两个单体单元（A和B）具有不同的蚀刻速率。

公开(公告)号：US20090155718A1

公开(公告)日：2009-06-18

申请号：US11955451

申请日：2007-12-13

申请人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-kin Li ,  Pushkara R. Varanasi

发明人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-kin Li ,  Pushkara R. Varanasi

IPC分类号： G03F7/004 ,  G03F7/20

CPC分类号： G03F7/0045 ,  G03F7/0397 ,  G03F7/40

摘要： A method and a resist composition. The resist composition includes a polymer having repeating units having a lactone moiety, a thermal base generator capable of generating a base and a photosensitive acid generator. The polymer has the properties of being substantially soluble in a first solvent and becoming substantially insoluble after heating the polymer. The method includes forming a film of a photoresist including a polymer, a thermal base generator capable of releasing a base, a photosensitive acid generator, and a solvent. The film is patternwise imaged. The imaging includes exposing the film to radiation, resulting in producing an acid catalyst. The film is developed in an aqueous base, resulting in removing base-soluble regions and forming a patterned layer. The patterned layer is baked above the temperature, resulting in the thermal base generator releasing a base within the patterned layer and the patterned layer becoming insoluble in the solvent.

公开(公告)号：US20090089021A1

公开(公告)日：2009-04-02

申请号：US11862434

申请日：2007-09-27

申请人： Lijun Jiang ,  Jason D. Morsey ,  Barry J. Rubin ,  Weng C. Chew ,  Mao-Kin Li ,  Yuan Liu

发明人： Lijun Jiang ,  Jason D. Morsey ,  Barry J. Rubin ,  Weng C. Chew ,  Mao-Kin Li ,  Yuan Liu

IPC分类号： G06F17/10 ,  G06G7/48

CPC分类号： G06F17/5036

摘要： A method for performing a signal integrity analysis on an integrated circuit (IC) that includes a plurality of scatterers by dividing the scatterers into subgroups using a nested Huygens' equivalence principle algorithm and solving a set of equations realized thereby with a reduced coupling matrix. The method includes decomposing the IC design into a plurality of small non-overlapping circuit sub-domains, wherein each of the sub-domains is formed as a small, enclosed region. Each sub-domain is analyzed independently of the other sub-domains using only electric fields to represent the interactions of each sub-domains with the other sub-domains as equivalent currents on equivalent surfaces of the plurality of sub-domains. Neighboring equivalent sub-domains are grouped together to form larger sub-domains using equivalent currents on equivalent surfaces to represent the interactions of the sub-domains. The steps of analyzing and grouping the sub-domains are repeated until the grouping approaches a box comprising the entire domain, and that the domain interactions between every sub-domain have been analyzed.

摘要翻译： 一种用于通过使用嵌套的惠更斯等效原理算法将散射体分成子组并且用减小的耦合矩阵求解由此实现的一组方程式来对包括多个散射体的集成电路（IC）进行信号完整性分析的方法。 该方法包括将IC设计分解为多个小的非重叠电路子域，其中每个子域形成为小的封闭区域。 仅使用电场来分析每个子域独立于其他子域，以将每个子域与其他子域的相互作用表示为多个子域的等效表面上的等效电流。 相邻的等效子域被分组在一起以形成较大的子域，使用等效表面上的等效电流来表示子域的相互作用。 重复分析和分组子域的步骤，直到分组接近包含整个域的框，并且分析了每个子域之间的域交互。

公开(公告)号：US20090045484A1

公开(公告)日：2009-02-19

申请号：US11839716

申请日：2007-08-16

申请人： Kaushik Chanda ,  Lynne M. Gignac ,  Wai-Kin Li ,  Ping-Chuan Wang

发明人： Kaushik Chanda ,  Lynne M. Gignac ,  Wai-Kin Li ,  Ping-Chuan Wang

IPC分类号： H01L23/52 ,  H01H37/76 ,  H01L23/525 ,  H01L21/44 ,  H01L29/00

CPC分类号： G11C17/16 ,  H01L21/7682 ,  H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

摘要： An electrically reprogrammable fuse comprising an interconnect disposed in a dielectric material, a sensing wire disposed at a first end of the interconnect, a first programming wire disposed at a second end of the interconnect, and a second programming wire disposed at a second end of the interconnect, wherein the fuse is operative to form a surface void at the interface between the interconnect and the sensing wire when a first directional electron current is applied from the first programming wire through the interconnect to the second programming wire, and wherein, the fuse is further operative to heal the surface void between the interconnect and the sensing wire when a second directional electron current is applied from the second programming wire through the interconnect to the first programming wire.

摘要翻译： 一种电可重新编程的保险丝，其包括设置在电介质材料中的互连，布置在所述互连的第一端的感测线，布置在所述互连的第二端的第一编程线，以及设置在所述互连的第二端的第二编程线 其中当从所述第一编程线通过所述互连件施加第一定向电子线到所述第二编程线时，所述保险丝可操作以在所述互连和感测线之间的界面处形成表面空隙，并且其中，所述保险丝是 当从所述第二编程线通过所述互连件施加第二编程线到所述第一编程线时，还可操作以治愈所述互连和所述感测线之间的表面空隙。