利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

137 条记录 (耗时 0.025 秒)

    Array substrate for liquid crystal display device having two storage capacitor structures and the fabrication method of the same
    92.
    发明授权
    Array substrate for liquid crystal display device having two storage capacitor structures and the fabrication method of the same 有权
    具有两个存储电容器结构的液晶显示装置用阵列基板及其制造方法

    公开(公告)号：US07242022B2

    公开(公告)日：2007-07-10

    申请号：US10455435

    申请日：2003-06-06

    申请人： Byung-chul Ahn ,  Byoung-ho Lim ,  Soon-sung Yoo ,  Yong-wan Kim

    发明人： Byung-chul Ahn ,  Byoung-ho Lim ,  Soon-sung Yoo ,  Yong-wan Kim

    IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/20 ,  H01L31/036 ,  H01L31/0376

    CPC分类号： H01L27/1288 ,  H01L27/124 ,  H01L27/1255

    摘要： An array substrate of a liquid crystal display device includes a substrate; an elongated gate line having a gate electrode on said substrate, said gate line extending in a first direction; a gate extension line on said substrate and that connects to said gate line, said gate extension line extending substantially perpendicularly to said gate line; a first insulating layer over said substrate, said gate line, and said gate extension line; a storage capacitor comprising a portion of said gate line, a conductive capacitor electrode that overlaps a portion of said gate line, an ohmic contact layer and a dielectric layer that includes said first insulating layer and a semiconductor layer; a passivation layer on said capacitor electrode; and a pixel electrode on said passivation layer, said pixel electrode contacting said capacitor electrode through a hole in said passivation layer.

    摘要翻译： 液晶显示装置的阵列基板包括基板; 在所述基板上具有栅电极的细长栅极线，所述栅极线沿第一方向延伸; 在所述衬底上的栅极延伸线并且连接到所述栅极线，所述栅极延伸线基本上垂直于所述栅极线延伸; 所述基板上的第一绝缘层，所述栅极线和所述栅极延伸线; 包括所述栅极线的一部分的存储电容器，与所述栅极线的一部分重叠的导电电容器电极，欧姆接触层和包括所述第一绝缘层和半导体层的电介质层; 所述电容器电极上的钝化层; 以及所述钝化层上的像素电极，所述像素电极通过所述钝化层中的一个孔接触所述电容器电极。

    Thin film transistor array substrate and method of manufacturing the same
    93.
    发明授权
    Thin film transistor array substrate and method of manufacturing the same 有权
    薄膜晶体管阵列基板及其制造方法

    公开(公告)号：US07202500B2

    公开(公告)日：2007-04-10

    申请号：US10958264

    申请日：2004-10-06

    申请人： Soon Sung Yoo ,  Heung Lyul Cho

    发明人： Soon Sung Yoo ,  Heung Lyul Cho

    IPC分类号： H01L29/04

    CPC分类号： H01L27/1248 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/458

    摘要： A thin film transistor array substrate includes a gate pattern on a substrate. The gate pattern includes a gate electrode, a gate line connected to the gate electrode, and a lower gate pad electrode connected to the gate line. A source/drain pattern includes a source electrode and a drain electrode, a data line connected to the source electrode, and a lower data pad electrode connected to the data line. A semiconductor pattern is formed beneath the source/drain pattern. A transparent electrode pattern includes a pixel electrode connected to the drain electrode, an upper gate pad electrode connected to the lower gate pad electrode, and an upper data pad electrode connected to the lower data pad electrode. The thin film array substrate further includes a gate insulating pattern and a passivation film pattern stacked at remaining areas excluding areas within which the transparent electrode pattern is formed.

    摘要翻译： 薄膜晶体管阵列基板在基板上包括栅极图案。 栅极图案包括栅电极，连接到栅电极的栅极线和连接到栅极线的下栅极焊盘电极。 源极/漏极图案包括源电极和漏电极，连接到源电极的数据线和连接到数据线的下数据焊盘电极。 在源极/漏极图案之下形成半导体图案。 透明电极图案包括连接到漏电极的像素电极，连接到下栅极焊盘电极的上栅极焊盘电极和连接到下数据焊盘电极的上数据焊盘电极。 薄膜阵列基板还包括层叠在除了形成透明电极图案的区域之外的其余区域的栅极绝缘图案和钝化膜图案。

    Thin film transistor substrate using a horizontal electric field
    94.
    发明申请
    Thin film transistor substrate using a horizontal electric field 有权
    薄膜晶体管基板采用水平电场

    公开(公告)号：US20070029551A1

    公开(公告)日：2007-02-08

    申请号：US11544748

    申请日：2006-10-10

    申请人： Soon Sung Yoo ,  Oh Nam Kwon ,  Heung Lyul Cho

    发明人： Soon Sung Yoo ,  Oh Nam Kwon ,  Heung Lyul Cho

    IPC分类号： H01L29/04

    CPC分类号： G02F1/13458 ,  G02F1/134363 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/66765

    摘要： A thin film transistor substrate structure for using a horizontal electric field includes a substrate; a gate line and a first common line formed on the substrate parallel to each other from a first conductive layer; a gate insulating film formed on the substrate, the gate line, and the first common line; a data line formed from a second conductive layer on the gate insulating film crossing the gate line and the common line with the gate insulating film therebetween to define a pixel area; a thin film transistor connected to the gate line and the data line; a protective film covering the data line and the thin film transistor; a common electrode formed from a third conductive layer connected to the common line through a hole passing through the protective film and the gate insulating film; and a pixel electrode formed from the second conductive layer connected to the thin film transistor to define a horizontal electric field between the pixel electrode and the common electrode.

    摘要翻译： 用于使用水平电场的薄膜晶体管衬底结构包括：衬底; 形成在所述基板上的栅极线和第一公共线从第一导电层彼此平行; 形成在基板上的栅极绝缘膜，栅极线和第一公共线; 由栅极绝缘膜上的与栅极线交叉的第二导电层和与其间的栅极绝缘膜的公共线形成的数据线，以限定像素区域; 连接到栅极线和数据线的薄膜晶体管; 覆盖数据线和薄膜晶体管的保护膜; 由通过穿过保护膜的孔和栅极绝缘膜连接到公共线的第三导电层形成的公共电极; 以及由连接到薄膜晶体管的第二导电层形成的像素电极，以在像素电极和公共电极之间限定水平电场。

    Liquid crystal display device having more uniform seal heights and its fabricating method
    95.
    发明授权
    Liquid crystal display device having more uniform seal heights and its fabricating method 有权
    具有更均匀的密封高度的液晶显示装置及其制造方法

    公开(公告)号：US07173684B2

    公开(公告)日：2007-02-06

    申请号：US09893970

    申请日：2001-06-29

    申请人： Soon Sung Yoo ,  Dong Yeung Kwak ,  Yu Ho Jung ,  Yong Wan Kim ,  Woo Chae Lee ,  Dug Jin Park ,  Hoo Sung Kim

    发明人： Soon Sung Yoo ,  Dong Yeung Kwak ,  Yu Ho Jung ,  Yong Wan Kim ,  Woo Chae Lee ,  Dug Jin Park ,  Hoo Sung Kim

    IPC分类号： G02F1/1339

    CPC分类号： G02F1/1339 ,  G02F1/133351

    摘要： A liquid crystal display device, and a fabricating method thereof, that is capable of providing uniform liquid cell gaps. A main seal defines a liquid crystal injection area. A first step coverage-compensating layer is provided between a substrate on which the main seal has been coated and the main seal. A plurality of dummy seals is arranged external to the main seal. A second step coverage-compensating layer having the same thickness as the first step coverage-compensating layer is provided between the substrate on which the dummy seals are arranged and the dummy seals. Accordingly, a main seal and dummy seals having the same thickness produce uniform liquid crystal cell gaps. The liquid crystal display device is beneficially made by a fabrication process employing four or five masks.

    摘要翻译： 一种液晶显示装置及其制造方法，其能够提供均匀的液池间隙。 主密封限定了液晶注入区域。 在其上涂覆有主密封件的基板和主密封件之间提供第一级覆盖补偿层。 多个虚拟密封件布置在主密封件的外部。 具有与第一步骤覆盖补偿层相同厚度的第二阶段覆盖补偿层设置在其上布置虚拟密封件的基板和虚拟密封件之间。 因此，具有相同厚度的主密封件和虚拟密封件产生均匀的液晶单元间隙。 液晶显示装置有利地由采用四或五个掩模的制造工艺制成。

    Thin film transistor substrate of a horizontal electric field type LCD and fabricating method thereof
    96.
    发明申请
    Thin film transistor substrate of a horizontal electric field type LCD and fabricating method thereof 有权
    水平电场型LCD薄膜晶体管基板及其制造方法

    公开(公告)号：US20070024793A1

    公开(公告)日：2007-02-01

    申请号：US11542249

    申请日：2006-10-04

    申请人： Soon-Sung Yoo ,  Youn-Gyoung Chang ,  Heung-Lyul Cho

    发明人： Soon-Sung Yoo ,  Youn-Gyoung Chang ,  Heung-Lyul Cho

    IPC分类号： G02F1/1343

    CPC分类号： G02F1/1362 ,  G02F1/134363 ,  G02F2001/136231 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/66765

    摘要： A thin film transistor substrate structure of a horizontal electric field type LCD comprises a plurality of signal lines including a gate, a data, and a common lines disposed on a substrate; the data line intersecting with the gate and common lines, a gate insulating film disposed between the data line and the gate and common lines, a pixel area being defined by the intersection of the data and gate lines; a thin film transistor disposed at the intersection of the data line and gate line; a common and a pixel electrodes both having a portion extended into the pixel area; a protective film disposed over the substrate and the thin film transistor; and at least one pad structure including an upper pad electrode contacting a lower pad electrode within a first contact hole wherein the upper pad electrode is absent from the upper surface of the protective film.

    摘要翻译： 水平电场型LCD的薄膜晶体管衬底结构包括多个信号线，包括设置在衬底上的栅极，数据和公共线; 与栅极和公共线相交的数据线，设置在数据线与栅极和公共线之间的栅极绝缘膜，像素区域由数据和栅极线的交点定义; 设置在数据线与栅极线的交点处的薄膜晶体管; 一个共同的和一个像素电极，两者都具有延伸到像素区域中的一部分; 设置在所述基板和所述薄膜晶体管上的保护膜; 以及至少一个焊盘结构，其包括在第一接触孔内接触下焊盘电极的上焊盘电极，其中上焊盘电极不在保护膜的上表面中。

    Method of manufacturing liquid crystal display device
    98.
    发明授权
    Method of manufacturing liquid crystal display device 有权
    制造液晶显示装置的方法

    公开(公告)号：US06960484B2

    公开(公告)日：2005-11-01

    申请号：US10733371

    申请日：2003-12-12

    申请人： Soon-Sung Yoo ,  Youn-Gyoung Chang ,  Heung-Lyul Cho ,  Seung-Hee Nam

    发明人： Soon-Sung Yoo ,  Youn-Gyoung Chang ,  Heung-Lyul Cho ,  Seung-Hee Nam

    IPC分类号： G02F1/13 ,  G02F1/1343 ,  G02F1/1345 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G03F7/00 ,  H01L21/00 ,  H01L21/02 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786

    CPC分类号： H01L27/1288 ,  H01L27/1214

    摘要： A method of manufacturing a liquid crystal display device includes steps of forming a gate line, a gate pad and a gate electrode on a first substrate through a first mask process, forming a data line, a data pad, a source electrode, a drain electrode and an active layer on the first substrate including the gate line, the gate pad and the gate electrode through a second mask process, forming a pixel electrode and a data pad terminal on the first substrate including the data line, the data pad, the source electrode and the drain electrode through a third mask process, forming a passivation layer on an entire surface of the first substrate including the pixel electrode and the data pad terminal, attaching the first substrate including the passivation layer with a second substrate, wherein a gate pad portion including the gate pad and a data pad portion including the data pad are exposed by the second substrate, providing a liquid crystal material into a gap between the first and second substrates, and removing the passivation layer in the gate and data pad portions exposed by the second substrate.

    摘要翻译： 制造液晶显示装置的方法包括以下步骤：通过第一掩模处理在第一基板上形成栅极线，栅极焊盘和栅电极，形成数据线，数据焊盘，源电极，漏电极 以及通过第二掩模处理在包括栅极线，栅极焊盘和栅电极的第一衬底上的有源层，在包括数据线的第一衬底上形成像素电极和数据焊盘端子，数据焊盘，源极 电极和漏电极，通过第三掩模工艺在包括像素电极和数据焊盘端子的第一衬底的整个表面上形成钝化层，将包括钝化层的第一衬底与第二衬底附接，其中栅极焊盘 包括栅极焊盘的部分和包括数据焊盘的数据焊盘部分被第二基板曝光，将液晶材料提供到第一和第二焊盘之间的间隙中 并且去除由第二基板暴露的栅极和数据焊盘部分中的钝化层。

    Thin film transistor substrate of a horizontal electric field type LCD and fabricating method thereof
    99.
    发明申请
    Thin film transistor substrate of a horizontal electric field type LCD and fabricating method thereof 有权
    水平电场型LCD薄膜晶体管基板及其制造方法

    公开(公告)号：US20050092995A1

    公开(公告)日：2005-05-05

    申请号：US10973886

    申请日：2004-10-27

    申请人： Soon-Sung Yoo ,  Youn-Gyoung Chang ,  Heung-Lyul Cho

    发明人： Soon-Sung Yoo ,  Youn-Gyoung Chang ,  Heung-Lyul Cho

    IPC分类号： G02F1/1368 ,  G02F1/1343 ,  G02F1/1362 ,  G09F9/30 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L29/04

    CPC分类号： G02F1/1362 ,  G02F1/134363 ,  G02F2001/136231 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/66765

    摘要： A thin film transistor substrate structure of a horizontal electric field type LCD comprises a plurality of signal lines including a gate, a data, and a common lines disposed on a substrate; the data line intersecting with the gate and common lines, a gate insulating film disposed between the data line and the gate and common lines, a pixel area being defined by the intersection of the data and gate lines; a thin film transistor disposed at the intersection of the data line and gate line; a common and a pixel electrodes both having a portion extended into the pixel area; a protective film disposed over the substrate and the thin film transistor; and at least one pad structure including an upper pad electrode contacting a lower pad electrode within a first contact hole wherein the upper pad electrode is absent from the upper surface of the protective film.

    摘要翻译： 水平电场型LCD的薄膜晶体管衬底结构包括多个信号线，包括设置在衬底上的栅极，数据和公共线; 与栅极和公共线相交的数据线，设置在数据线与栅极和公共线之间的栅极绝缘膜，像素区域由数据与栅极线的交点定义; 设置在数据线与栅极线的交点处的薄膜晶体管; 一个共同的和一个像素电极，两者都具有延伸到像素区域中的一部分; 设置在所述基板和所述薄膜晶体管上的保护膜; 以及至少一个焊盘结构，其包括在第一接触孔内接触下焊盘电极的上焊盘电极，其中上焊盘电极不在保护膜的上表面中。