公开(公告)号：US20100059745A1

公开(公告)日：2010-03-11

申请号：US12499009

申请日：2009-07-07

Applicant: Kap-Soo Yoon ,  Ki-Won Kim ,  Sung-Ryul Kim ,  Sung-Hoon Yang ,  Woo-Geun Lee

Inventor： Kap-Soo Yoon ,  Ki-Won Kim ,  Sung-Ryul Kim ,  Sung-Hoon Yang ,  Woo-Geun Lee

IPC: H01L29/786 ,  H01L21/34

CPC classification number: H01L27/1248 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/4908 ,  H01L29/7869

Abstract: Provided are a thin-film transistor (TFT) display panel having improved electrical properties that can be fabricated time-effectively and a method of fabricating the TFT display panel. The TFT display panel includes: gate wirings which are formed on an insulating substrate; oxide active layer patterns which are formed on the gate wirings; data wirings which are formed on the oxide active layer patterns to cross the gate wirings; a passivation layer which is formed on the oxide active layer patterns and the data wirings and is made of silicon nitride (SiNx); and a pixel electrode which is formed on the passivation layer.

Abstract translation: 提供了一种薄膜晶体管（TFT）显示面板，其具有可以有效制造的改进的电气特性和制造TFT显示面板的方法。 TFT显示面板包括：形成在绝缘基板上的栅极布线; 形成在栅极布线上的氧化物有源层图案; 形成在氧化物有源层图案上以跨过栅极布线的数据布线; 形成在氧化物有源层图案和数据布线上并由氮化硅（SiNx）制成的钝化层; 以及形成在钝化层上的像素电极。

公开(公告)号：US20090278127A1

公开(公告)日：2009-11-12

申请号：US12399774

申请日：2009-03-06

Applicant: Sung-Hoon KIM ,  Kwan-Hee LEE ,  Sung-Hoon YANG ,  Young-Hoon YOO

Inventor： Sung-Hoon KIM ,  Kwan-Hee LEE ,  Sung-Hoon YANG ,  Young-Hoon YOO

IPC: H01L29/786 ,  H01L21/336 ,  H01L33/00

CPC classification number: H01L27/1288 ,  H01L27/1214 ,  H01L29/04 ,  H01L29/78696

Abstract: In one embodiment, a thin-film transistor (TFT) includes a gate electrode, a semiconductor pattern, first and second electrodes and a protective layer. The semiconductor pattern is formed on the gate electrode, and includes a first semiconductor layer deposited at a first deposition speed and a second semiconductor layer deposited at a second deposition speed faster than the first deposition speed. The first and second electrodes are spaced apart from each other on the semiconductor pattern. The protective layer is formed on the semiconductor pattern to cover the first and second electrodes, and makes contact with a channel region of the first semiconductor layer to form an interface with the first semiconductor layer. Thus, electrical characteristics of the TFT may be improved.

Abstract translation: 在一个实施例中，薄膜晶体管（TFT）包括栅电极，半导体图案，第一和第二电极以及保护层。 半导体图案形成在栅电极上，并且包括以第一沉积速度沉积的第一半导体层和以比第一沉积速度快的第二沉积速度沉积的第二半导体层。 第一和第二电极在半导体图案上彼此间隔开。 保护层形成在半导体图案上以覆盖第一和第二电极，并与第一半导体层的沟道区域接触以形成与第一半导体层的界面。 因此，可以提高TFT的电特性。

公开(公告)号：US20080185590A1

公开(公告)日：2008-08-07

申请号：US11930536

申请日：2007-10-31

Applicant: Byoung-June Kim ,  Jae-Ho Choi ,  Chang-Oh Jeong ,  Sung-Hoon Yang ,  Je-Hun Lee ,  Do-Hyun Kim ,  Hwa-Yeul Oh ,  Yong-Mo Choi

Inventor： Byoung-June Kim ,  Jae-Ho Choi ,  Chang-Oh Jeong ,  Sung-Hoon Yang ,  Je-Hun Lee ,  Do-Hyun Kim ,  Hwa-Yeul Oh ,  Yong-Mo Choi

IPC: H01L29/04 ,  H01L21/84

CPC classification number: H01L27/1255 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66765

Abstract: A manufacturing method of a thin film transistor (TFT) includes forming a gate electrode including a metal that can be combined with silicon to form silicide on a substrate and forming a gate insulation layer by supplying a gas which includes silicon to the gate electrode at a temperature below about 280° C. The method further includes forming a semiconductor on the gate insulation layer, forming a data line and a drain electrode on the semiconductor and forming a pixel electrode connected to the drain electrode.

Abstract translation: 薄膜晶体管（TFT）的制造方法包括形成包括可以与硅组合的金属的栅电极，以在衬底上形成硅化物，并通过在栅极电极中向栅电极提供包括硅的气体形成栅极绝缘层 该方法还包括在栅极绝缘层上形成半导体，在半导体上形成数据线和漏极并形成连接到漏电极的像素电极。

公开(公告)号：US20080176364A1

公开(公告)日：2008-07-24

申请号：US11841336

申请日：2007-08-20

Applicant: Sung-Hoon YANG ,  Byoung-June KIM ,  Yong-Mo CHOI

Inventor： Sung-Hoon YANG ,  Byoung-June KIM ,  Yong-Mo CHOI

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L27/1248 ,  H01L27/1288

Abstract: The present invention provides a method for manufacturing a thin film transistor substrate including forming gate wires on an insulation substrate, forming oxide active layer patterns on the gate wires, forming data wires on the oxide active layer patterns so that the data wires cross the gate wires, forming a passivation film on the oxide active layer patterns and the data wires using a non-reductive reaction gas and SiH4, and forming pixel electrodes on the passivation film

Abstract translation: 本发明提供了一种制造薄膜晶体管基板的方法，包括在绝缘基板上形成栅极线，在栅极线上形成氧化物有源层图案，在氧化物有源层图案上形成数据线，使得数据线与栅极线交叉 在氧化物活性层图案和数据线上使用非还原反应气体和SiH 4 S 4形成钝化膜，并在钝化膜上形成像素电极

公开(公告)号：US07323371B2

公开(公告)日：2008-01-29

申请号：US11071544

申请日：2005-03-03

Applicant: Sung-Hoon Yang ,  Wan-Shick Hong ,  Kwan-Wook Jung

Inventor： Sung-Hoon Yang ,  Wan-Shick Hong ,  Kwan-Wook Jung

IPC: H01L21/00 ,  H01L21/84

CPC classification number: G02F1/136227 ,  C23C16/30 ,  G02F2001/136222 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/1288 ,  H01L27/3244 ,  H01L29/458 ,  H01L29/4908 ,  H01L51/56

Abstract: The present invention relates to a process for vapor depositing a low dielectric insulating film, a thin film transistor using the same, and a preparation method thereof, and more particularly to a process for vapor deposition of low dielectric insulating film that can significantly improve a vapor deposition speed while maintaining properties of the low dielectric insulating film, thereby solving parasitic capacitance problems to realize a high aperture ratio structure, and can reduce a process time by using silane gas when vapor depositing an insulating film by a CVD or PECVD method to form a protection film for a semiconductor device. The present invention also relates to a thin film transistor using the process and preparation method thereof.

Abstract translation: 本发明涉及一种用于气相沉积低介电绝缘膜的方法，使用其的薄膜晶体管及其制备方法，更具体地涉及可以显着改善蒸气的低介电绝缘膜的气相沉积方法 同时保持低介电绝缘膜的性能，从而解决了寄生电容问题，以实现高开口率结构，并且通过使用硅烷气体通过CVD或PECVD方法蒸镀绝缘膜时可以减少处理时间，以形成 用于半导体器件的保护膜。 本发明还涉及使用该方法及其制备方法的薄膜晶体管。

公开(公告)号：US20070268437A1

公开(公告)日：2007-11-22

申请号：US11747014

申请日：2007-05-10

Applicant: Mee-Hye Jung ,  Ji-Won Sohn ,  Sung-Hoon Yang ,  Jin-Won Park ,  Seon-Ah Cho

Inventor： Mee-Hye Jung ,  Ji-Won Sohn ,  Sung-Hoon Yang ,  Jin-Won Park ,  Seon-Ah Cho

IPC: G02F1/1337

CPC classification number: G02F1/1343 ,  G02F1/133707 ,  G02F1/1393

Abstract: In a liquid crystal display device, the device includes a first substrate, a second substrate and a liquid crystal layer interposed therebetween. The first substrate includes a pixel electrode, a thin film transistor connected to the pixel electrode, and also a hitch to connect both a lower and upper electrode of the pixel electrode. The second substrate includes a common electrode having a lower domain division part and an upper domain division part, in which each of domain division part is formed at the position corresponding to the lower and upper electrode of the pixel electrode, respectively. Through the electric field controller connected at both sides of the upper electrode of the pixel electrode, quality of display image can improve without a darkening area occurring at one part of the unit pixel.

Abstract translation: 在液晶显示装置中，该装置包括第一基板，第二基板和插入其间的液晶层。 第一基板包括像素电极，连接到像素电极的薄膜晶体管，以及连接像素电极的下电极和上电极的连接。 第二基板包括具有下畴分割部分和上畴分割部分的公共电极，其中每个畴分割部分分别形成在与像素电极的下电极和上电极相对应的位置。 通过连接在像素电极的上部电极的两侧的电场控制器，可以改善显示图像的质量，而不会在单位像素的一部分处发生变暗区域。

公开(公告)号：US20070212827A1

公开(公告)日：2007-09-13

申请号：US11675935

申请日：2007-02-16

Applicant: Kunal Girotra ,  Byoung-June Kim ,  Sung-Hoon Yang

Inventor： Kunal Girotra ,  Byoung-June Kim ,  Sung-Hoon Yang

IPC: H01L21/84

CPC classification number: H01L29/04 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0262 ,  H01L27/1296

Abstract: A method of manufacturing a silicon layer includes pretreating a surface of a silicon nitride layer formed on a substrate through a plasma enhanced chemical vapor deposition method using a first reaction gas including at least one of silicone tetrafluoride (SiF4) gas, a nitrogen trifluoride (NF3) gas, SiF4—H2 gas and a mixture thereof Then, a silicon layer is formed on the pretreated silicon nitride layer through the plasma enhanced chemical vapor deposition method using a second reaction gas including a mixture of gas including silicon tetrfluoride (SiF4), hydrogen (H2) and argon (Ar),

Abstract translation: 一种制造硅层的方法包括：使用第一反应气体，通过等离子体增强化学气相沉积方法来预处理在衬底上形成的氮化硅层的表面，所述第一反应气体包括四氟化硅（SiF 4 N 4 O 4） ）气体，三氟化氮（NF 3 3）气体，SiF 4 H 2 H 2气体及其混合物然后，形成硅层 通过等离子体增强化学气相沉积方法在预处理的氮化硅层上，使用包括包括四氟化硅（SiF 4 N 4），氢（H 2 O 3）的气体混合物的第二反应气体， ）和氩（Ar），

公开(公告)号：US20070196576A1

公开(公告)日：2007-08-23

申请号：US11677353

申请日：2007-02-21

Applicant: Byoung-June KIM ,  Sung-Hoon Yang ,  Jae-Ho Choi

Inventor： Byoung-June KIM ,  Sung-Hoon Yang ,  Jae-Ho Choi

IPC: C23C16/00

CPC classification number: C23C16/24 ,  C23C16/56 ,  G02F1/133305 ,  G02F1/133345 ,  H01L27/1214 ,  H01L27/1262 ,  H01L27/127 ,  H01L29/78603

Abstract: A manufacturing method for a flat panel display device includes forming a barrier layer on a flexible plastic substrate by RF sputtering, forming an amorphous silicon layer on the plastic substrate, and subjecting the amorphous silicon layer to a rapid heat treatment so as to thereby improve electrical characteristics and/or homogeneity of the amorphous silicon layer.

Abstract translation: 平板显示装置的制造方法包括通过RF溅射在柔性塑料基板上形成阻挡层，在塑料基板上形成非晶硅层，对非晶硅层进行快速热处理，从而改善电气 非晶硅层的特性和/或均匀性。

公开(公告)号：US20070158656A1

公开(公告)日：2007-07-12

申请号：US11639494

申请日：2006-12-14

Applicant: Woo-jae Lee ,  Sung-hoon Yang

Inventor： Woo-jae Lee ,  Sung-hoon Yang

IPC: H01L29/04 ,  H01L21/84

CPC classification number: H01L27/1288 ,  G02F1/133305 ,  G02F1/1362 ,  G02F2001/133388 ,  G02F2001/136231 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1266 ,  H01L29/78603

Abstract: An LCD includes a thin film display device having a plastic insulating substrate in which lifting of the edge of the thin film is avoided which includes a display region and a non-display region; a gate line assembly formed on the plastic insulating substrate with the use of a shadow mask disposed over the plastic insulating substrate; a gate insulating layer formed on the gate line assembly in the display region; a data line formed on the gate insulating layer and a data pad formed in the non-display region and spaced away from the gate insulating layer; and a passivation layer formed on the data line.

Abstract translation: LCD包括具有塑料绝缘基板的薄膜显示装置，其中避免了包括显示区域和非显示区域的薄膜边缘的提升; 使用设置在塑料绝缘基板上的荫罩在塑料绝缘基板上形成的栅极线组件; 形成在所述显示区域中的所述栅极线组件上的栅极绝缘层; 形成在所述栅极绝缘层上的数据线和形成在所述非显示区域中并与所述栅极绝缘层间隔开的数据焊盘; 以及形成在数据线上的钝化层。

公开(公告)号：US20130208261A1

公开(公告)日：2013-08-15

申请号：US13529690

申请日：2012-06-21

Applicant: Sang Youn HAN ,  Byung Seong BAE ,  Jun Ho SONG ,  Sung Hoon YANG ,  Ho Sik JEON

Inventor： Sang Youn HAN ,  Byung Seong BAE ,  Jun Ho SONG ,  Sung Hoon YANG ,  Ho Sik JEON

IPC: G01N21/00 ,  G01J1/00

CPC classification number: G09G3/2092 ,  G09G2354/00 ,  G09G2360/142

Abstract: Provided are a photo sensor, a display device including the same, and a driving method thereof The photo sensor includes: an amplifying element including an input terminal coupled to a scan line for receiving a scan signal, an output terminal configured to output a sensing signal, and a control terminal connected to a first node; a sensing capacitor connected with the first node; a photosensitive sensing element including a control terminal connected with a terminal of a first control signal, an output terminal connected with the first node, and an input terminal; and a reset element connected with the output terminal of the amplifying element and resetting the output terminal of the amplifying element to second voltage according to a reset control signal.

Abstract translation: 提供了一种光传感器，包括该光传感器的显示装置及其驱动方法。光传感器包括：放大元件，包括耦合到用于接收扫描信号的扫描线的输入端子，输出端子，被配置为输出感测信号 以及连接到第一节点的控制终端; 与第一节点连接的感测电容器; 感光元件，包括与第一控制信号的端子连接的控制端子，与第一节点连接的输出端子和输入端子; 以及与放大元件的输出端子连接的复位元件，并根据复位控制信号将放大元件的输出端子复位为第二电压。