Method of manufacturing a thin-film transistor, method of manufacturing a display substrate, and display substrate
    2.
    发明授权
    Method of manufacturing a thin-film transistor, method of manufacturing a display substrate, and display substrate 有权
    制造薄膜晶体管的方法,制造显示基板的方法和显示基板

    公开(公告)号:US08877551B2

    公开(公告)日:2014-11-04

    申请号:US13619075

    申请日:2012-09-14

    IPC分类号: H01L21/00

    摘要: In a method of manufacturing a thin film transistor, a gate electrode is formed on a first surface of a base substrate, a oxide semiconductor layer, insulation layer and photo resist layer are formed an the fast surface of the base substrate having the gate electrode. The insulation layer and the oxide semiconductor layer are patterned using a first photo resist pattern to form an etch-stopper and an active pattern. A source and a drain electrode are formed on the base substrate having the active pattern and the etch-stopper, the source electrode and the drain electrode are overlapped with both ends of the etch-stopper and spaced apart from each other. Therefore, a manufacturing cost may be decreased by omitting a mask when forming the active pattern and the etch-stopper.

    摘要翻译: 在制造薄膜晶体管的方法中,在具有栅电极的基底基板的快速表面上,在基底基板的第一表面,氧化物半导体层,绝缘层和光致抗蚀剂层上形成栅电极。 使用第一光致抗蚀剂图案对绝缘层和氧化物半导体层进行构图,以形成蚀刻停止层和活性图案。 源极和漏极形成在具有有源图案的基底基板上,并且蚀刻停止器,源极电极和漏电极与蚀刻停止器的两端重叠并且彼此间隔开。 因此,当形成活性图案和蚀刻停止物时,可以通过省略掩模来降低制造成本。

    Semiconductor light emitting device including bonding layer and semiconductor light emitting device package
    3.
    发明授权
    Semiconductor light emitting device including bonding layer and semiconductor light emitting device package 有权
    半导体发光器件包括接合层和半导体发光器件封装

    公开(公告)号:US08853731B2

    公开(公告)日:2014-10-07

    申请号:US13419120

    申请日:2012-03-13

    IPC分类号: H01L33/00

    摘要: A light emitting device including a bonding layer; a barrier layer on the bonding layer; an adhesion layer on the barrier layer, in which the adhesion layer includes Pd, Au, and Sn; a reflective layer on the adhesion layer, in which the reflective layer includes Ag; an ohmic contact layer on the reflective layer, in which the ohmic contact layer includes Pt and Ag; a light emitting structure layer on the ohmic contact layer; and a passivation layer includes an insulating material on a side surface and a top surface of the light emitting structure layer.

    摘要翻译: 1.一种发光器件,包括:接合层; 接合层上的阻挡层; 阻挡层上的粘合层,其中粘合层包括Pd,Au和Sn; 粘合层上的反射层,其中反射层包括Ag; 反射层上的欧姆接触层,其中欧姆接触层包括Pt和Ag; 欧姆接触层上的发光结构层; 并且钝化层在发光结构层的侧表面和顶表面上包括绝缘材料。

    METHOD OF MANUFACTURING A THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING A DISPLAY SUBSTRATE, AND DISPLAY SUBSTRATE
    4.
    发明申请
    METHOD OF MANUFACTURING A THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING A DISPLAY SUBSTRATE, AND DISPLAY SUBSTRATE 有权
    制造薄膜晶体管的方法,制造显示基板的方法和显示基板

    公开(公告)号:US20130234169A1

    公开(公告)日:2013-09-12

    申请号:US13619075

    申请日:2012-09-14

    IPC分类号: H01L29/786 H01L21/336

    摘要: In a method of manufacturing a thin film transistor, a gate electrode is formed on a first surface of a base substrate, a oxide semiconductor layer, insulation layer and photo resist layer are formed an the fast surface of the base substrate having the gate electrode. The insulation layer and the oxide semiconductor layer are patterned using a first photo resist pattern to form an etch-stopper and an active pattern. A source and a drain electrode are formed on the base substrate having the active pattern and the etch-stopper, the source electrode and the drain electrode are overlapped with both ends of the etch-stopper and spaced apart from each other. Therefore, a manufacturing cost may be decreased by omitting a mask when forming the active pattern and the etch-stopper.

    摘要翻译: 在制造薄膜晶体管的方法中,在具有栅电极的基底基板的快速表面上,在基底基板的第一表面,氧化物半导体层,绝缘层和光致抗蚀剂层上形成栅电极。 使用第一光致抗蚀剂图案对绝缘层和氧化物半导体层进行构图,以形成蚀刻停止层和活性图案。 源极和漏极形成在具有有源图案的基底基板上,并且蚀刻停止器,源极电极和漏电极与蚀刻停止器的两端重叠并且彼此间隔开。 因此,当形成活性图案和蚀刻停止物时,可以通过省略掩模来降低制造成本。

    LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE
    8.
    发明申请
    LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE 有权
    发光装置和发光装置包装

    公开(公告)号:US20110156077A1

    公开(公告)日:2011-06-30

    申请号:US13044721

    申请日:2011-03-10

    IPC分类号: H01L33/46

    摘要: A light emitting device is provided. The light emitting device comprises: a conductive support substrate; a bonding layer on the conductive support substrate; a reflective layer on the bonding layer; and a light emitting structure layer on the reflective layer. The bonding layer comprises a solder bonding layer on the conductive support substrate and at least one of a diffusion barrier layer and an adhesion layer on the solder bonding layer, the solder bonding layer, the diffusion barrier layer, and the adhesion layer being formed of a metal or an alloy of which the Young's Modulus is 9 GPa to 200 GPa.

    摘要翻译: 提供了一种发光器件。 发光器件包括:导电支撑衬底; 导电支撑基板上的接合层; 接合层上的反射层; 和反射层上的发光结构层。 所述接合层包括在所述导电性支撑基板上的焊料接合层,并且所述焊料接合层,所述焊料接合层,所述扩散阻挡层,以及所述粘合层的扩散阻挡层和粘附层中的至少一个由 金属或其杨氏模量为9GPa至200GPa的合金。

    Liquid crystal displays and manufacturing methods thereof
    9.
    发明授权
    Liquid crystal displays and manufacturing methods thereof 有权
    液晶显示器及其制造方法

    公开(公告)号:US07961263B2

    公开(公告)日:2011-06-14

    申请号:US10891117

    申请日:2004-07-15

    CPC分类号: G02F1/136204

    摘要: A liquid crystal display can include a gate wire including a gate line, a gate pad and a gate line connector and a common signal wire formed on a substrate. A gate insulating layer may be formed over the gate wire and the common signal wire. A semiconductor layer and an ohmic contact layer may be sequentially formed on the gate insulating layer, a data wire including a source and a drain electrode, a data line, a data pad, a data line connector and a pixel electrode may be formed thereon. The thickness of the data wire and the pixel electrode may be equal to or less than 500 Å.

    摘要翻译: 液晶显示器可以包括栅极线,其包括栅极线,栅极焊盘和栅极线连接器以及形成在基板上的公共信号线。 栅极绝缘层可以形成在栅极线和公共信号线上。 可以在栅极绝缘层上顺序地形成半导体层和欧姆接触层,可以在其上形成包括源极和漏极的数据线,数据线,数据焊盘,数据线连接器和像素电极。 数据线和像素电极的厚度可以等于或小于500。

    Manufacturing method of transflective LCD and transflective LCD thereof
    10.
    发明授权
    Manufacturing method of transflective LCD and transflective LCD thereof 有权
    半透反射LCD及其半透反射LCD的制造方法

    公开(公告)号:US07929102B2

    公开(公告)日:2011-04-19

    申请号:US12432138

    申请日:2009-04-29

    摘要: A manufacturing method of a transflective LCD comprising forming a multiple layer on a substrate by depositing transparent electrode layer and a gate metal layer sequentially, forming a gate line, a gate electrode, a gate pad forming part and a data pad forming part by patterning the multiple layer, forming a gate insulating layer, forming a semiconductor layer, forming a data line, a source electrode and a drain electrode, forming a passivation layer and an organic insulating layer and forming a gate pad and a data pad by providing contact holes exposing the transparent electrode layer on the gate pad forming part and the data pad forming part, respectively.Accordingly, it is an aspect of the present invention to provide a manufacturing method of a transflective LCD using less masks and a transflective LCD thereof.

    摘要翻译: 一种透反射LCD的制造方法,包括通过依次沉积透明电极层和栅极金属层在衬底上形成多层来形成栅极线,栅电极,栅极焊盘形成部分和数据焊盘形成部分,通过图案化 形成栅绝缘层,形成半导体层,形成数据线,源电极和漏电极,形成钝化层和有机绝缘层,并通过提供接触孔暴露出形成栅极焊盘和数据焊盘 栅极焊盘形成部分上的透明电极层和数据焊盘形成部分。 因此,本发明的一个方面是提供一种使用较少掩模的透反射LCD及其半透半反镜式LCD的制造方法。