公开(公告)号：US20120224279A1

公开(公告)日：2012-09-06

申请号：US13472314

申请日：2012-05-15

申请人： Hiromi Yuasa ,  Tomoko Taguchi ,  Hideaki Fukuzawa

发明人： Hiromi Yuasa ,  Tomoko Taguchi ,  Hideaki Fukuzawa

IPC分类号： G11B5/127

CPC分类号： G11B5/314 ,  G11B5/02 ,  G11B5/1278 ,  G11B5/3163 ,  G11B2005/0002

摘要： An example magnetic recording head includes a main magnetic pole containing a ferromagnetic layer and a main magnetic pole-magnetization fixing portion containing an anti-ferromagnetic layer in contact with at least one side surface of the main magnetic pole. A heater for the main magnetic pole is configured so as to include an oxide layer with a metal path therein embedded in or provided in the vicinity of the main magnetic pole-magnetization fixing portion and a pair of electrodes, provided in the vicinity of the oxide layer, for flowing a current parallel to a surface of a recording medium through the metal path. A magnetic field generator generates a magnetic field so as to direct a magnetization of the main magnetic pole in one direction.

摘要翻译： 示例性的磁记录头包括含有铁磁层的主磁极和包含与主磁极的至少一个侧表面接触的反铁磁层的主磁极固定部分。 用于主磁极的加热器被构造成包括其中嵌入或设置在主磁极固定部分附近的金属路径的氧化物层和设置在氧化物附近的一对电极 层，用于通过金属路径流动平行于记录介质的表面的电流。 磁场发生器产生磁场，以便在一个方向上引导主磁极的磁化。

公开(公告)号：US07978442B2

公开(公告)日：2011-07-12

申请号：US11906716

申请日：2007-10-03

申请人： Kunliang Zhang ,  Min Li ,  Yue Liu ,  Hideaki Fukuzawa ,  Hiromi Yuasa

发明人： Kunliang Zhang ,  Min Li ,  Yue Liu ,  Hideaki Fukuzawa ,  Hiromi Yuasa

IPC分类号： G11B5/39

CPC分类号： H01F41/307 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3106 ,  G11B5/313 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3268 ,  H01L43/08 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49227

摘要： A novel CCP scheme is disclosed for a CPP-GMR sensor in which an amorphous metal/alloy layer such as Hf is inserted between a lower Cu spacer and an oxidizable layer such as Al, Mg, or AlCu prior to performing a pre-ion treatment (PIT) and ion assisted oxidation (IAO) to transform the amorphous layer into a first metal oxide template and the oxidizable layer into a second metal oxide template both having Cu metal paths therein. The amorphous layer promotes smoothness and smaller grain size in the oxidizable layer to minimize variations in the metal paths and thereby improves dR/R, R, and dR uniformity by 50% or more. An amorphous Hf layer may be used without an oxidizable layer, or a thin Cu layer may be inserted in the CCP scheme to form a Hf/PIT/IAO or Hf/Cu/Al/PIT/IAO configuration. A double PIT/IAO process may be used as in Hf/PIT/IAO/Al/PIT/IAO or Hf/PIT/IAO/Hf/PIT/IAO schemes.

摘要翻译： 公开了一种用于CPP-GMR传感器的新型CCP方案，其中在执行预离子处理之前，在诸如Al，Mg或AlCu的下部Cu间隔物和可氧化层之间插入诸如Hf的非晶态金属/合金层 （PIT）和离子辅助氧化（IAO），以将非晶层转变为第一金属氧化物模板，并将可氧化层转变成其中具有Cu金属路径的第二金属氧化物模板。 无定形层促进可氧化层中的平滑度和较小的晶粒尺寸以最小化金属路径的变化，从而将dR / R，R和DR均匀度提高50％以上。 可以使用无氧Hf层，或者可以在CCP方案中插入薄Cu层以形成Hf / PIT / IAO或Hf / Cu / Al / PIT / IAO配置。 可以使用双重PIT / IAO工艺，如Hf / PIT / IAO / Al / PIT / IAO或Hf / PIT / IAO / Hf / PIT / IAO方案。

公开(公告)号：US07843669B2

公开(公告)日：2010-11-30

申请号：US12366972

申请日：2009-02-06

申请人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masashi Sahashi

发明人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masashi Sahashi

IPC分类号： G11B5/39

CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/398 ,  G11B5/3983 ,  G11C11/16 ,  G11C11/161 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01F10/3281 ,  H01F41/303 ,  H01F41/325 ,  H01L27/224 ,  H01L27/228 ,  Y10T428/1121

摘要： A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of nitride, oxinitride, phosphide, and fluoride. The pair of electrodes are electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film.

摘要翻译： 磁阻效应元件包括磁阻效应膜和一对电极。 具有第一磁性层的磁阻效应膜，其磁化方向基本上在一个方向上被固定; 其磁化方向响应于外部磁场而变化的第二磁性层; 位于第一和第二磁性层之间的非磁性中间层; 以及设置在所述第一磁性层中，在所述第二磁性层中，在所述第一磁性层和所述非磁性中间层之间的界面处和/或在所述第二磁性层和所述非磁性中间层之间的界面处设置的膜，所述膜具有 厚度不大于3纳米，该膜具有选自氮化物，氮氧化物，磷化物和氟化物中的至少一种。 一对电极电连接到磁阻效应膜，以提供垂直于所述磁阻效应膜的膜平面的感测电流。

公开(公告)号：US07719799B2

公开(公告)日：2010-05-18

申请号：US12314232

申请日：2008-12-05

申请人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Susumu Hashimoto ,  Hitoshi Iwasaki

发明人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Susumu Hashimoto ,  Hitoshi Iwasaki

IPC分类号： G11B5/127

CPC分类号： H01F10/324 ,  B82Y25/00 ,  G11B5/3906 ,  H01F10/3259 ,  H01F10/3268

摘要： A magnetoresistive element has a first magnetic layer and a second magnetic layer separate from each other, the first magnetic layer and the second magnetic layer each having a magnetization whose direction is substantially pinned, and a non-magnetic conductive layer formed in contact with the first magnetic layer and the second magnetic layer and electrically connecting the first and second magnetic layers, the non-magnetic conductive layer forming a path of spin-polarized electrons from one of the magnetic layer to the other magnetic layer, the non-magnetic conductive layer comprising a portion located between the first magnetic layer and the second magnetic layer, the portion being a sensing area.

摘要翻译： 磁阻元件具有彼此分离的第一磁性层和第二磁性层，第一磁性层和第二磁性层各自具有方向基本上被钉扎的磁化，以及形成为与第一磁性层接触的非磁性导电层 磁性层和第二磁性层，并且电连接第一和第二磁性层，非磁性导电层形成自旋极化电子的路径从一个磁性层到另一个磁性层，非磁性导电层包括 位于第一磁性层和第二磁性层之间的部分，该部分是感测区域。

公开(公告)号：US20090091865A1

公开(公告)日：2009-04-09

申请号：US11906716

申请日：2007-10-03

申请人： Kunliang Zhang ,  Min Li ,  Yue Liu ,  Hideaki Fukuzawa ,  Hiromi Yuasa

发明人： Kunliang Zhang ,  Min Li ,  Yue Liu ,  Hideaki Fukuzawa ,  Hiromi Yuasa

IPC分类号： G11B5/33

CPC分类号： H01F41/307 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3106 ,  G11B5/313 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3268 ,  H01L43/08 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49227

摘要： A novel CCP scheme is disclosed for a CPP-GMR sensor in which an amorphous metal/alloy layer such as Hf is inserted between a lower Cu spacer and an oxidizable layer such as Al, Mg, or AlCu prior to performing a pre-ion treatment (PIT) and ion assisted oxidation (IAO) to transform the amorphous layer into a first metal oxide template and the oxidizable layer into a second metal oxide template both having Cu metal paths therein. The amorphous layer promotes smoothness and smaller grain size in the oxidizable layer to minimize variations in the metal paths and thereby improves dR/R, R, and dR uniformity by 50% or more. An amorphous Hf layer may be used without an oxidizable layer, or a thin Cu layer may be inserted in the CCP scheme to form a Hf/PIT/IAO or Hf/Cu/Al/PIT/IAO configuration. A double PIT/IAO process may be used as in Hf/PIT/IAO/Al/PIT/IAO or Hf/PIT/IAO/Hf/PIT/IAO schemes.

摘要翻译： 公开了一种用于CPP-GMR传感器的新型CCP方案，其中在执行预离子处理之前，在诸如Al，Mg或AlCu的下部Cu间隔物和可氧化层之间插入诸如Hf的非晶态金属/合金层 （PIT）和离子辅助氧化（IAO），以将非晶层转变为第一金属氧化物模板，并将可氧化层转变成其中具有Cu金属路径的第二金属氧化物模板。 无定形层促进可氧化层中的平滑度和较小的晶粒尺寸以最小化金属路径的变化，从而将dR / R，R和DR均匀度提高50％以上。 可以使用无氧Hf层，或者可以在CCP方案中插入薄Cu层以形成Hf / PIT / IAO或Hf / Cu / Al / PIT / IAO配置。 可以使用双重PIT / IAO工艺，如Hf / PIT / IAO / Al / PIT / IAO或Hf / PIT / IAO / Hf / PIT / IAO方案。

公开(公告)号：US07515387B2

公开(公告)日：2009-04-07

申请号：US11248296

申请日：2005-10-13

申请人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Hitoshi Iwasaki

发明人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Hitoshi Iwasaki

IPC分类号： G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3929 ,  G11B5/398 ,  G11B2005/3996

摘要： A spin-valve magnetoresistive effect film includes a magnetization fixed layer, a magnetization free layer, and a nonmagnetic intermediate layer interposed therebetween. The nonmagnetic intermediate layer has a conduction part disposed in an insulation layer and made of a nonmagnetic metal material. The ferromagnetic film stacked on an upper side of the nonmagnetic intermediate layer, out of ferromagnetic films constituting the magnetization fixed layer and the magnetization free layer has a perpendicular orientation part which is disposed above the conduction part and whose crystal growth direction is substantially perpendicular to a film plane, and a non-perpendicular orientation part which exists in a portion other than the perpendicular orientation part. A magnetoresistive effect element has a pair of electrodes passing a sense current in a direction perpendicular to the film plane of the spin-valve magnetoresistive effect film.

摘要翻译： 自旋阀磁阻效应膜包括磁化固定层，磁化自由层和插入其间的非磁性中间层。 非磁性中间层具有设置在绝缘层中并由非磁性金属材料制成的导电部分。 层叠在非磁性中间层的上侧的铁磁性膜，构成磁化固定层的铁磁膜和磁化自由层的铁磁膜具有垂直取向部，该垂直取向部设置在导电部的上方，晶体生长方向大致垂直于 薄膜平面和存在于除了垂直定向部分之外的部分中的非垂直取向部分。 磁阻效应元件具有一对在垂直于自旋阀磁阻效应膜的膜平面的方向上通过感测电流的电极。

公开(公告)号：US20070109147A1

公开(公告)日：2007-05-17

申请号：US11524238

申请日：2006-09-21

申请人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hitoshi Iwasaki

发明人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hitoshi Iwasaki

IPC分类号： G08G1/16

CPC分类号： H03B15/006 ,  B82Y25/00 ,  G01S7/006 ,  G01S7/35 ,  G01S13/345 ,  G01S2013/936 ,  H01F10/3259 ,  H01F10/329 ,  Y10T428/24942

摘要： A high-frequency oscillator includes a high-frequency oscillation element having a magnetization pinned layer whose magnetization direction is pinned substantially in one direction, an oscillation layer formed of a magnetic material which generates a high-frequency oscillation phenomenon when a current is supplied, an intermediate layer provided between the magnetization pinned layer and the oscillation layer, the intermediate layer having an insulation layer and current paths which pass through the insulation layer in a thickness direction, and a pair of electrodes which supply a current perpendicularly to a plane of a stacked film including the magnetization pinned layer, the intermediate layer and the oscillation layer.

摘要翻译： 高频振荡器包括：高频振荡元件，具有磁化被钉扎层，其磁化方向基本上被固定在一个方向上;振动层，其由在供应电流时产生高频振荡现象的磁性材料形成， 中间层设置在磁化被钉扎层和振荡层之间，中间层具有绝缘层和沿厚度方向穿过绝缘层的电流路径，以及一对电极，其垂直于堆叠的平面提供电流 膜包括磁化固定层，中间层和振荡层。

公开(公告)号：US20070081276A1

公开(公告)日：2007-04-12

申请号：US11609557

申请日：2006-12-12

申请人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masashi Sahashi

发明人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masashi Sahashi

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/398 ,  G11B5/3983 ,  G11C11/16 ,  G11C11/161 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01F10/3281 ,  H01F41/303 ,  H01F41/325 ,  H01L27/224 ,  H01L27/228 ,  Y10T428/1121

摘要： A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of nitride, oxinitride, phosphide, and fluoride. The pair of electrodes are electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film.

摘要翻译： 磁阻效应元件包括磁阻效应膜和一对电极。 具有第一磁性层的磁阻效应膜，其磁化方向基本上在一个方向上被固定; 其磁化方向响应于外部磁场而变化的第二磁性层; 位于第一和第二磁性层之间的非磁性中间层; 以及设置在所述第一磁性层中，在所述第二磁性层中，在所述第一磁性层和所述非磁性中间层之间的界面处和/或在所述第二磁性层和所述非磁性中间层之间的界面处设置的膜，所述膜具有 厚度不大于3纳米，该膜具有选自氮化物，氮氧化物，磷化物和氟化物中的至少一种。 一对电极电连接到磁阻效应膜，以提供垂直于所述磁阻效应膜的膜平面的感测电流。

公开(公告)号：US07190558B2

公开(公告)日：2007-03-13

申请号：US10178023

申请日：2002-06-24

申请人： Hitoshi Iwasaki ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hiromi Yuasa ,  Hideaki Fukuzawa ,  Masashi Sahashi

发明人： Hitoshi Iwasaki ,  Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Hiromi Yuasa ,  Hideaki Fukuzawa ,  Masashi Sahashi

IPC分类号： G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/3254 ,  H01L43/10

摘要： In a CPP element using a metal intermediate layer excellent in shot noise and response to high frequencies unlike a TMR element, its magnetoresistive effect film includes a magnetic layer mainly made of a half-metal exhibiting ferromagnetism, ferrimagnetism or antiferromagnetism, and largely variable in way of conduction in response to spin direction of electrons.

摘要翻译： 在使用与TMR元件不同的散粒噪声和高频响应的金属中间层的CPP元件中，其磁阻效应膜包括主要由呈现铁磁性，亚铁磁性或反铁磁性的半金属制成的磁性层，并且在很大程度上可变化 的响应于电子的自旋方向的传导。

公开(公告)号：US20060268470A1

公开(公告)日：2006-11-30

申请号：US11441351

申请日：2006-05-26

申请人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hitoshi Iwasaki

发明人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hitoshi Iwasaki

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： G11B5/3929 ,  G11B5/3903 ,  G11B5/3932 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1675 ,  H01F10/3263 ,  H01F10/3272 ,  H01L27/224 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： A magnetoresistive element includes at least three metallic magnetic layers, connection layers each provided between the metallic magnetic layers, and electrodes which supply a current perpendicularly to a plane of a stack of the metallic magnetic layers and the connection layers. A magnetization direction of a lowermost or uppermost metallic magnetic layer of the metallic magnetic layers is pinned, and a magnetization direction of an intermediate metallic magnetic layer is twisted such that magnetization directions of the lowermost and the uppermost metallic magnetic layers are made substantially orthogonal to each other at zero external field.

摘要翻译： 磁阻元件包括至少三个金属磁性层，各自设置在金属磁性层之间的连接层以及垂直于金属磁性层和连接层的堆叠平面提供电流的电极。 金属磁性层的最下层或最上层的金属磁性层的磁化方向被钉扎，并且中间金属磁性层的磁化方向被扭曲使得最下层和最上面的金属磁性层的磁化方向基本上与每个 其他在零外场。