公开(公告)号：US20100078555A1

公开(公告)日：2010-04-01

申请号：US12630346

申请日：2009-12-03

申请人： Ryo FUJITA ,  Haruo Yoda ,  Kimiaki Ando ,  Yuji Inoue ,  Masato Muraki

发明人： Ryo FUJITA ,  Haruo Yoda ,  Kimiaki Ando ,  Yuji Inoue ,  Masato Muraki

IPC分类号： G01N23/00

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/31762 ,  H01J2237/31769

摘要： High-contrast exposure is performed by use of a small dose of electron beams, a pattern is formed on a wafer with high accuracy, and high-precision inspection is performed. In pattern formation, proximity effect correction processing is performed. Moreover, exposure of electron beams is performed based on a result of filtering using an inverse characteristic of exposure characteristics of the electron beams. Furthermore, in pattern inspection, electron beams are irradiated based on a result of filtering for obtaining a peripheral region of an edge of the pattern formed.

摘要翻译： 通过使用小剂量的电子束进行高对比度曝光，以高精度在晶片上形成图案，进行高精度检查。 在图案形成中，执行邻近效应校正处理。 此外，基于使用电子束的曝光特性的逆特性的滤波结果来执行电子束的曝光。 此外，在图案检查中，基于滤波结果照射电子束，以获得形成的图案的边缘的周边区域。

公开(公告)号：US07608844B2

公开(公告)日：2009-10-27

申请号：US11136703

申请日：2005-05-25

申请人： Yuji Inoue ,  Haruo Yoda ,  Kimiaki Ando ,  Yoshikiyo Yui

发明人： Yuji Inoue ,  Haruo Yoda ,  Kimiaki Ando ,  Yoshikiyo Yui

IPC分类号： G21K5/10

CPC分类号： H01J37/3026 ,  B82Y10/00 ,  B82Y40/00 ,  G21K1/08 ,  H01J37/3174 ,  H01J2237/31762

摘要： In the present invention, vector data developing unit, ends separating unit, overlap removing unit and bitmapped data generating unit are sequentially connected in order to make pipeline processing. In addition, data of each raster is orderly arranged as a unit so that each processor can process data of each raster at a time. Each processor can make the pipeline processing to fast generate data. In addition, small-scale circuits can be used to realize the system because each raster can be processed as a unit of processing. Moreover, since data is orderly arranged before being processed, multi-valued bitmapped data can be generated in the order of drawing. Therefore, the drawing operation and data generating operation can be performed in parallel without use of any large-scale storage device.

摘要翻译： 在本发明中，为了进行流水线处理，顺序地连接矢量数据显影单元，端部分离单元，重叠移除单元和位图数据生成单元。 此外，每个光栅的数据被有序地排列成一个单元，使得每个处理器可以一次处理每个光栅的数据。 每个处理器可以使流水线处理快速生成数据。 此外，可以使用小规模电路来实现系统，因为每个光栅可以作为处理单元被处理。 此外，由于在处理之前数据被有序排列，所以可以按照绘制的顺序生成多值位图数据。 因此，绘图操作和数据生成操作可以并行执行而不使用任何大型存储设备。

公开(公告)号：US20080067403A1

公开(公告)日：2008-03-20

申请号：US11762182

申请日：2007-06-13

申请人： Masato Muraki ,  Haruo Yoda

发明人： Masato Muraki ,  Haruo Yoda

IPC分类号： H01J3/14

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J2237/043 ,  H01J2237/24507 ,  H01J2237/3045 ,  H01J2237/30455 ,  H01J2237/30477 ,  H01J2237/30483

摘要： An exposure apparatus which draws a pattern on a substrate with a charged particle beam is disclosed. The exposure apparatus includes a detector which detects a charged particle beam, a deflector which deflects the charged particle beam to scan the substrate or the detector with the charged particle beam, and a controller which controls the deflector to scan each of a plurality of scanning ranges on the detector with the charged particle beam, and calculates, on the basis of the charged particle beam amount detected by the detector upon scanning the plurality of scanning ranges, the intensity distribution of the charged particle beam which strikes the detector.

摘要翻译： 公开了一种在具有带电粒子束的基板上绘制图案的曝光装置。 曝光装置包括检测带电粒子束的检测器，使带电粒子束偏转以利用带电粒子束扫描基板或检测器的偏转器，以及控制偏转器扫描多个扫描范围中的每一个的控制器 在具有带电粒子束的检测器上，并且基于扫描多个扫描范围时由检测器检测到的带电粒子束量计算撞击检测器的带电粒子束的强度分布。

公开(公告)号：US07049610B2

公开(公告)日：2006-05-23

申请号：US10885665

申请日：2004-07-08

申请人： Masato Muraki ,  Haruo Yoda

发明人： Masato Muraki ,  Haruo Yoda

IPC分类号： H01J37/305

CPC分类号： H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/0435 ,  H01J2237/083 ,  H01J2237/30477

摘要： In a charged particle beam exposure method of applying/not applying charged particle beams to expose a substrate by deflecting the charged particle beams to move the charged particle beams on a blanking aperture stop, the size of the charged particle beams on the blanking aperture stop is made larger than the size of the blanking aperture stop.

摘要翻译： 在通过使带电粒子束偏转以使带电粒子束移动到消隐孔径光阑上而施加/不施加带电粒子束以暴露衬底的带电粒子束曝光方法中，消隐孔径光阑上的带电粒子束的尺寸为 制成大于冲孔孔径的尺寸。

公开(公告)号：US06407808B2

公开(公告)日：2002-06-18

申请号：US09764450

申请日：2001-01-19

申请人： Haruo Yoda ,  Mari Nozoe

发明人： Haruo Yoda ,  Mari Nozoe

IPC分类号： G01N2100

CPC分类号： G01N21/956

摘要： A visual reinspection of circuit patterns using a reviewing apparatus is omitted from a semiconductor circuit pattern forming process to achieve the minute analysis of detected defects in the circuit patterns quickly. A fast pattern inspecting system comprises a calculating means for calculating the graphical characteristic quantities of the defects in synchronism with the detection of the defects, and a classifying means for classifying the defects in clusters by the calculated characteristic quantities.

公开(公告)号：US06246472B1

公开(公告)日：2001-06-12

申请号：US09110343

申请日：1998-07-06

申请人： Haruo Yoda ,  Mari Nozoe

发明人： Haruo Yoda ,  Mari Nozoe

IPC分类号： G01N2100

CPC分类号： G01N21/956

摘要： A visual reinspection of circuit patterns using a reviewing apparatus is omitted from a semiconductor circuit pattern forming process to achieve the minute analysis of detected defects in the circuit patterns quickly. A fast pattern inspecting system comprises a calculating means for calculating the graphical characteristic quantities of the defects in synchronism with the detection of the defects, and a classifying means for classifying the defects in clusters by the calculated characteristic quantities.

摘要翻译： 从半导体电路图案形成处理中省略使用检查装置的电路图案的视觉重新检查，以快速实现电路图案中检测到的缺陷的微小分析。 快速图案检查系统包括用于与缺陷的检测同步地计算缺陷的图形特征量的计算装置，以及用于通过计算的特征量对簇中的缺陷进行分类的分类装置。

公开(公告)号：US5283440A

公开(公告)日：1994-02-01

申请号：US770527

申请日：1991-10-03

申请人： Yasunari Sohda ,  Hideo Todokoro ,  Norio Saitou ,  Haruo Yoda ,  Hiroyuki Itoh ,  Hiroyuki Shinada ,  Yoshinori Nakayama ,  Shinji Okazaki

发明人： Yasunari Sohda ,  Hideo Todokoro ,  Norio Saitou ,  Haruo Yoda ,  Hiroyuki Itoh ,  Hiroyuki Shinada ,  Yoshinori Nakayama ,  Shinji Okazaki

IPC分类号： H01J37/317 ,  H01J37/30

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/049 ,  H01J2237/1532 ,  H01J2237/30455 ,  H01J2237/31776

摘要： An electron beam writing system is used in variable shaping and cell projection methods to produce LSI and reticles. In the cell projection method, the beam is deflected to define a writing position. In the time it takes to define the writing position, an operation of forming the beam is concluded, which operation includes the deflection of the beam to select a cell graphic, re-deflection for correcting the origin position of the written graphic, astigmatism correction of the written graphic, and focus correction for reducing the Coulomb effect. An electrostatic deflector is used as the deflector for the cell graphic selection. The arrangement of graphics includes a square aperture centrally located with a group of cell projection apertures positioned adjacent two sides of the square aperture.

摘要翻译： 电子束写入系统用于可变整形和电池投影方法以产生LSI和光罩。 在单元投影方法中，光束被偏转以限定写入位置。 在定义写入位置的时候，结束了形成光束的操作，其操作包括光束的偏转以选择单元图形，用于校正写入图形的原点位置的重新偏转，散光校正 书面图形和焦点校正，以减少库仑效应。 静电偏转器用作细胞图形选择的偏转器。 图形的布置包括中心定位的方孔，其中一组单元突出孔定位成邻近正方形孔的两侧。

公开(公告)号：US5278421A

公开(公告)日：1994-01-11

申请号：US900311

申请日：1992-06-18

申请人： Haruo Yoda ,  Fumio Murai

发明人： Haruo Yoda ,  Fumio Murai

IPC分类号： G03F7/20 ,  H01J37/302 ,  H01L21/027 ,  H01L21/30 ,  H01J37/304

CPC分类号： H01J37/3026 ,  H01J2237/31769

摘要： The present application relates to a method and an apparatus for forming a pattern, in which a plane on which a pattern on a sample is traced is decomposed into predetermined partial regions; the pattern density in each of the partial regions is stored in data storing means as pattern density map data; and the irradiation energy amount of a charged particle beam is corrected on the basis of the pattern density map data to correct shortage and excess in the exposure dose due to roughness and fineness of the pattern, i.e. the proximity effect. Further, the present application relates to a method and an apparatus for forming a pattern, in which, when one or a plurality of layers located under the layer on which the pattern should be formed have patterns, influences of the underlayers on the proximity effect are taken into account.

摘要翻译： 本申请涉及一种用于形成图案的方法和装置，其中将跟踪样本上的图案的平面分解成预定的部分区域; 每个部分区域中的图案密度作为图案密度图数据存储在数据存储装置中; 并且基于图案密度图数据校正带电粒子束的照射能量，以校正由于图案的粗糙度和细度，即邻近效应引起的曝光剂量的不足和过剩。 此外，本申请涉及用于形成图案的方法和装置，其中当位于其上应形成图案的层下面的一个或多个层具有图案时，底层对邻近效应的影响是 考虑到

公开(公告)号：US4532598A

公开(公告)日：1985-07-30

申请号：US386301

申请日：1982-06-08

申请人： Akinori Shibayama ,  Minpai Fujinami ,  Haruo Yoda

发明人： Akinori Shibayama ,  Minpai Fujinami ,  Haruo Yoda

IPC分类号： H01L21/027 ,  H01J37/302 ,  H01L21/30 ,  G01K1/08 ,  H01J3/14 ,  H01J3/26

CPC分类号： H01J37/3026 ,  H01L21/30

摘要： An electron beam exposure system of a variable shaped electron beam type in which an input pattern of any geometrical shape is decomposed into rectangular patterns of a given size, whereby the pattern is exposed by an electron beam having a cross-section corresponding to the decomposed rectangular pattern. Data for the input pattern is compared with data for the rectangular cross-sectional pattern of the electron beam in a comparator. When the comparison results is that the input pattern should be decomposed into rectangular patterns, the former is decomposed into two sub-patterns, one of which is outputted while the other again undergoes the comparison with the rectangular pattern parameters. The processing of decomposition can be executed at a very high speed in a pipelined system which includes a plurality of processing stages of similar arrangement.

摘要翻译： 一种可变形电子束型的电子束曝光系统，其中任何几何形状的输入图案被分解成给定尺寸的矩形图案，由此图案被具有对应于分解矩形的横截面的电子束曝光 模式。 将输入图案的数据与比较器中的电子束的矩形截面图案的数据进行比较。 当比较结果是将输入图案分解为矩形图案时，前者被分解为两个子图案，其中一个子图案被输出，而另一个子图案再次与矩形图案参数进行比较。 分解处理可以在包括多个类似布置的处理阶段的流水线系统中以非常高的速度执行。