Three dimensional high aspect ratio micromachining

    公开(公告)号:US20060157807A1

    公开(公告)日:2006-07-20

    申请号:US11375860

    申请日:2006-03-15

    IPC分类号: H01L29/84

    摘要: Multi-level structures are formed in a semiconductor substrate by first forming a pattern of lines or structures of different widths. Width information on the pattern is decoded by processing steps into level information to form a MEMS structure. The pattern is etched to form structures having a first floor. The structures are oxidized until structures of thinner width are substantially fully oxidized. A portion of the oxide is then etched to expose the first floor. The first floor is then etched to form a second floor. The oxide is then optionally removed, leaving a multi-level structure. In one embodiment, high aspect ratio comb actuators are formed using the multi-level structure process.

    Transformer on-load tap changer using MEMS technology
    93.
    发明授权
    Transformer on-load tap changer using MEMS technology 有权
    变压器有载分接开关采用MEMS技术

    公开(公告)号:US08203319B2

    公开(公告)日:2012-06-19

    申请号:US12500212

    申请日:2009-07-09

    IPC分类号: G05F1/14

    CPC分类号: H01H9/0011 H01H59/0009

    摘要: An on-load tap changer (OLTC) for a transformer winding is disclosed. The OLTC includes a first MEMS switch coupled in series with a first tap on the transformer winding and a neutral terminal. The OLTC also includes a second MEMS switch coupled in series with a second tap on the transformer winding and the neutral terminal. The OLTC further includes a controller coupled to the first MEMS switch and the second MEMS switch, the controller configured to coordinate the switching operations of the first MEMS switch module and the second MEMS switch module to obtain a first predetermined turns ratio or a second predetermined turns ratio for the transformer winding.

    摘要翻译: 公开了一种用于变压器绕组的有载分接开关(OLTC)。 OLTC包括与变压器绕组上的第一抽头和中性端子串联耦合的第一MEMS开关。 OLTC还包括与变压器绕组和中性端子上的第二抽头串联耦合的第二MEMS开关。 OLTC还包括耦合到第一MEMS开关和第二MEMS开关的控制器,该控制器被配置成协调第一MEMS开关模块和第二MEMS开关模块的开关操作,以获得第一预定匝数比或第二预定匝数 变压器绕组的比例。

    Small scale wires with microelectromechanical devices
    98.
    发明授权
    Small scale wires with microelectromechanical devices 有权
    小型电线与微机电装置

    公开(公告)号:US07339244B2

    公开(公告)日:2008-03-04

    申请号:US11340135

    申请日:2006-01-26

    IPC分类号: H01L27/14 H01L29/82

    摘要: A process cycles between etching and passivating chemistries to create rough sidewalls that are converted into small structures. In one embodiment, a mask is used to define lines in a single crystal silicon wafer. The process creates ripples on sidewalls of the lines corresponding to the cycles. The lines are oxidized in one embodiment to form a silicon wire corresponding to each ripple. The oxide is removed in a further embodiment to form structures ranging from micro sharp tips to photonic arrays of wires. Fluidic channels are formed by oxidizing adjacent rippled sidewalls. The same mask is also used to form other structures for MEMS devices.

    摘要翻译: 蚀刻和钝化化学物质之间的过程循环,以产生转变成小结构的粗糙侧壁。 在一个实施例中,使用掩模来限定单晶硅晶片中的线。 该过程在对应于循环的线的侧壁上产生波纹。 在一个实施例中,线被氧化以形成对应于每个纹波的硅线。 在另一个实施方案中去除氧化物以形成从微尖端到光线阵列的结构。 通过氧化相邻的波纹侧壁形成流体通道。 同样的掩模也用于形成用于MEMS器件的其它结构。