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    Semiconductor devices and methods of manufacture
    6.
    发明申请
    Semiconductor devices and methods of manufacture 审中-公开
    半导体器件及制造方法

    公开(公告)号：US20070096239A1

    公开(公告)日：2007-05-03

    申请号：US11263163

    申请日：2005-10-31

    申请人： Xian-An Cao ,  Stephen Arthur

    发明人： Xian-An Cao ,  Stephen Arthur

    IPC分类号： H01L31/00

    CPC分类号： H01L29/868 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/66196 ,  H01L29/66204 ,  H01L29/872

    摘要： A semiconductor device includes a substrate comprising a material selected from the group consisting of AlN, SiC, GaN, sapphire and combinations thereof. An n+ type epitaxial layer is disposed above substrate and comprises GaN or AlGaN. An n− type epitaxial layer is disposed above substrate and comprises GaN or AlGaN. A p+-n junction grid comprising p+ GaN or p+ AlGaN is formed on selective areas of the n− type epitaxial layer. A metal layer is disposed over the p+-n junction grid and forms a Schottky contact. Another metal layer is deposited on one of the substrate and the n+ type epitaxial layer and forms a cathode electrode. A method of fabricating a semiconductor device is provided and includes forming a p+-n junction grid on a drift layer comprising GaN or AlGaN.

    摘要翻译： 半导体器件包括包含选自由AlN，SiC，GaN，蓝宝石及其组合组成的组的材料的衬底。 n + +型外延层设置在衬底上方并包括GaN或AlGaN。 n型外延层设置在衬底上方并且包括GaN或AlGaN。 在n型外延层的选择性区域上形成包括p + +或/或+ AlGaN的p + 金属层设置在p + n + n连接栅格上方并形成肖特基接触。 另一金属层沉积在衬底和n +型外延层中的一个上并形成阴极电极。 提供了一种制造半导体器件的方法，包括在包括GaN或AlGaN的漂移层上形成p + + n结栅格。