Receiver and method of operation thereof
    91.
    发明申请
    Receiver and method of operation thereof 审中-公开
    接收机及其操作方法

    公开(公告)号:US20050254445A1

    公开(公告)日:2005-11-17

    申请号:US10510259

    申请日:2003-02-28

    摘要: A receiver comprises a plurality of antennas (108) for receiving signals originally transmitted as a plurality of different signals, for example from a MIMO (Multi-Input Multi-Output) transmitter. The receiver includes a plurality of coders (302) for applying a respective unique code to each received signal and a summer (306) for combining the coded signals into a single signal which is then down-converted by a single frequency translation stage (202) and digitised. An output signal corresponding to each received signal is obtained by a plurality of detectors (312) with reference to the codes used by the coders. In a preferred embodiment, the unique codes are orthogonal codes such as Walsh codes. The receiver enables a single frequency translation stage to be used to process a plurality of received signals, thereby both saving hardware and reducing the receiver's power consumption.

    摘要翻译: 接收机包括多个天线(108),用于例如从MIMO(多输入多输出)发射机接收原始作为多个不同信号发射的信号。 接收机包括用于向每个接收信号施加相应唯一码的多个编码器(302)和用于将编码信号组合成单个信号的加法器(306),然后单个信号由单个频率转换级(202)进行下变频, 并数字化。 参考编码器使用的代码,通过多个检测器(312)获得与每个接收信号相对应的输出信号。 在优选实施例中,唯一码是诸如沃尔什码之类的正交码。 该接收机使得能够使用单个频率转换级来处理多个接收的信号,从而既节约了硬件并降低了接收机的功耗。

    Memory cell with an asymmetric crystalline structure
    92.
    发明申请
    Memory cell with an asymmetric crystalline structure 有权
    具有不对称晶体结构的记忆单元

    公开(公告)号:US20050207265A1

    公开(公告)日:2005-09-22

    申请号:US11130983

    申请日:2005-05-16

    摘要: Asymmetrically structured memory cells and a fabrication method are provided. The method comprises: forming a bottom electrode; forming an electrical pulse various resistance (EPVR) first layer having a polycrystalline structure over the bottom electrode; forming an EPVR second layer adjacent the first layer, with a nano-crystalline or amorphous structure; and, forming a top electrode overlying the first and second EPVR layers. EPVR materials include CMR, high temperature super conductor (HTSC), or perovskite metal oxide materials. In one aspect, the EPVR first layer is deposited with a metalorganic spin coat (MOD) process at a temperature in the range between 550 and 700 degrees C. The EPVR second layer is formed at a temperature less than, or equal to the deposition temperature of the first layer. After a step of removing solvents, the MOD deposited EPVR second layer is formed at a temperature less than, or equal to the 550 degrees C.

    摘要翻译: 提供了非对称结构的存储单元和制造方法。 该方法包括:形成底部电极; 在底部电极上形成具有多晶结构的电脉冲各种电阻(EPVR)第一层; 用纳米结晶或无定形结构形成邻近第一层的EPVR第二层; 并且形成覆盖在第一和第二EPVR层上的顶部电极。 EPVR材料包括CMR,高温超导体(HTSC)或钙钛矿金属氧化物材料。 在一个方面,EPVR第一层在550-700℃的温度范围内用金属有机旋涂(MOD)工艺沉积.EPVR第二层是在小于或等于沉积温度 的第一层。 在除去溶剂的步骤之后,将MOD沉积的EPVR第二层在小于或等于550℃的温度下形成。

    Deadbolt
    93.
    发明申请
    Deadbolt 审中-公开
    死刑

    公开(公告)号:US20050160775A1

    公开(公告)日:2005-07-28

    申请号:US10503781

    申请日:2003-02-07

    申请人: David Evans

    发明人: David Evans

    IPC分类号: E05B17/20 E05C1/04 E05B65/06

    摘要: A lockable deadlock for face mounting has a housing and an axially displaceable securing bolt mounted in the housing and moveable between a retracted position and an extended position, the deadbolt further comprising locking means to lock the bolt in at least the extended position and retaining means to retain the bolt in the housing.

    摘要翻译: 用于面部安装的可锁定死锁具有安装在壳体中并可在缩回位置和延伸位置之间移动的壳体和可轴向移动的固定螺栓,所述锁舌还包括用于将螺栓至少锁定在延伸位置的锁定装置和保持装置 将螺栓保持在外壳中。

    Method of identifying the language of a textual passage using short word and/or n-gram comparisons
    94.
    发明申请
    Method of identifying the language of a textual passage using short word and/or n-gram comparisons 失效
    使用短单词和/或n-gram比较来识别文本段落的语言的方法

    公开(公告)号:US20050154578A1

    公开(公告)日:2005-07-14

    申请号:US10757313

    申请日:2004-01-14

    摘要: A method and system identifying the language of a textual passage is disclosed. The method and system includes parsing the textual passage into n-grams and assigning an initial weight to each n-gram, and adjusting the weight initially assigned to a word or n-gram parsed from the textual passage. The initially assigned weight is adjusted in a manner proportionate to the inverse of the number of languages within which such words or n-grams appear. Reducing the weight assigned to such words or n-grams diminishes—without completely eliminating—their importance in comparison to other words or n-grams parsed from the same textual passage when determining the language of a passage. The method and system of the present invention appropriately weighs the short words or n-grams common to multiple languages without affecting the short words or n-grams that are uncommon to several languages.

    摘要翻译: 公开了一种识别文本段落语言的方法和系统。 该方法和系统包括将文本段解析成n-gram并为每个n-gram分配初始权重,并且调整最初分配给从文本段解析出的单词或n-gram的权重。 以与这些单词或n-gram出现的语言数量的倒数成比例的方式调整初始分配的权重。 与确定一个段落的语言的同一文本段落中解释的其他单词或n-gram相比,减少分配给这些单词或n-gram的重量减少 - 没有完全消除它们的重要性。 本发明的方法和系统适当地称重多种语言通用的短语或n-gram,而不影响几种语言不常见的短语或n-gram。

    Strained silicon on insulator from film transfer and relaxation by hydrogen implantation
    95.
    发明申请
    Strained silicon on insulator from film transfer and relaxation by hydrogen implantation 有权
    绝缘体上的应变硅通过氢注入从膜转移和弛豫

    公开(公告)号:US20050153524A1

    公开(公告)日:2005-07-14

    申请号:US10755615

    申请日:2004-01-12

    CPC分类号: H01L21/76254

    摘要: Transistors fabricated on SSOI (Strained Silicon On Insulator) substrate, which comprises a strained silicon layer disposed directly on an insulator layer, have enhanced device performance due to the strain-induced band modification of the strained silicon device channel and the limited silicon volume because of the insulator layer. The present invention discloses a SSOI substrate fabrication process comprising various novel approaches. One is the use of a thin relaxed SiGe layer as the strain-induced seed layer to facilitate integration and reduce processing cost. Another is the formation of split implant microcracks deep in the silicon substrate to reduce the number of threading dislocations reaching the strained silicon layer. And lastly is the two step annealing/thinning process for the strained silicon/SiGe multilayer film transfer without blister or flaking formation.

    摘要翻译: 包含直接设置在绝缘体层上的应变硅层的SSOI(应变绝缘体硅)基板上制造的晶体管由于应变诱导的应变硅器件通道的带隙修改而增加了器件性能,并且由于 绝缘体层。 本发明公开了一种包括各种新方法的SSOI衬底制造工艺。 一个是使用薄的松弛SiGe层作为应变诱导的种子层,以促进整合并降低加工成本。 另一个是在硅衬底深部形成分裂的植入物微裂纹,以减少到达应变硅层的穿透位错的数量。 最后是对应变硅/ SiGe多层膜转移的两步退火/变薄处理,没有起泡或剥落形成。

    Molded plastic elbow
    96.
    发明申请
    Molded plastic elbow 有权
    模塑塑料弯头

    公开(公告)号:US20050140060A1

    公开(公告)日:2005-06-30

    申请号:US11061412

    申请日:2005-02-18

    IPC分类号: B29C45/26 F16L43/00 B29C45/00

    摘要: An improved molded plastic elbow and a related mold assembly and manufacturing method are provided, wherein the elbow defines an internal flow path having a smoothly radiused inside turn. The elbow is formed by injecting plastic material into a tubular mold cavity formed by closed mold members in cooperation with a pair of slidably retractable core units of circular cross section and having distal ends in mating, angularly set end-to-end contact to form the internal flow path having a turn formed along the length thereof. Each core unit comprises an outer core pin to form an outer portion of the flow path and including a ramped track for slide-fit mounting of an inner slide segment which forms an inner portion of the flow path and further includes a curved inside edge to form a portion of the smoothly radiused inside turn. Initial retraction of each outer core pin from the mold cavity permits relative advancement of the inner slide segment along the ramped track toward a centerline of the flow path, sufficiently for the curved inside edge of the inner slide segment to clear the radiused inside turn of the molded elbow and thereby enable interference-free linear withdrawal of the core unit from the molded plastic part.

    摘要翻译: 提供了一种改进的模制塑料弯头和相关的模具组装和制造方法,其中肘部限定了内部流动路径,该内部流动路径具有平滑的圆周内弯道。 肘部通过将塑料材料注射到由闭合的模具构件形成的管状模腔中,与一对可滑动地伸缩的圆形横截面的核心单元配合并且具有配合的端部,成角度地设置的端对端接触形成 内部流路具有沿其长度形成的转弯。 每个芯单元包括外芯销,以形成流动路径的外部部分,并且包括斜坡轨道,用于滑动配合安装内滑动段,其形成流动路径的内部部分,并且还包括弯曲的内边缘以形成 一部分光滑圆角内翻。 每个外芯销从模腔初始缩回允许内滑动段沿着倾斜轨道相对于流动路径的中心线相对前进,足以使内滑动段的弯曲内边缘清除 从而使得芯单元从模制塑料部件的无干扰线性退回。

    Single inductor dual output buck converter
    97.
    发明申请
    Single inductor dual output buck converter 有权
    单电感双输出降压转换器

    公开(公告)号:US20050105227A1

    公开(公告)日:2005-05-19

    申请号:US10714103

    申请日:2003-11-14

    IPC分类号: H02M3/158 H02H3/26

    摘要: A single-inductor dual-output buck converter facilitates power conversion by converting a single DC power source/supply into two separate DC outputs, each of which can be configured to provide a selected/desired voltage. The converter includes a single inductor and three power switches, which control operation of the converter. The converter has four basic stages of operation in which power is initially supplied to a first output that also stores charge. Subsequently, the stored charge of the first output is employed to provide power to a second output.

    摘要翻译: 单电感双输出降压转换器通过将单个DC电源/电源转换为两个独立的直流输出来促进功率转换,每个直流输出可以配置为提供所选择的/所需的电压。 该转换器包括单个电感器和三个电源开关,用于控制转换器的工作。 转换器具有四个基本操作阶段,其中电源最初被提供给也存储电荷的第一输出。 随后,采用第一输出的存储电荷为第二输出提供电力。

    Self-powered motorized window awning
    98.
    发明申请
    Self-powered motorized window awning 审中-公开
    自供电动窗户遮阳篷

    公开(公告)号:US20050072532A1

    公开(公告)日:2005-04-07

    申请号:US10676615

    申请日:2003-10-01

    IPC分类号: E04F10/06 E06B9/72

    摘要: A self-powered awning having a drive assembly with a motor at least partially inserted into an awning roll-up tube for deploying/retracting the awning. The awning uses a rechargeable battery and/or one or more solar panels to charge the rechargeable battery and/or power the awning. Accordingly, the awning can be installed onto a building or vehicle wall without requiring the awning to be wired to the building or vehicle electrical system. The drive assembly and power system can also be retrofitted to existing awnings.

    摘要翻译: 一种具有驱动组件的自动动力遮篷,其具有至少部分地插入到遮阳篷卷管中以用于展开/缩回遮阳篷的马达。 遮阳篷使用可充电电池和/或一个或多个太阳能电池板来对可再充电电池充电和/或对遮阳篷供电。 因此,遮阳篷可以安装在建筑物或车辆墙壁上,而不需要将遮阳篷连接到建筑物或车辆电气系统。 驱动组件和电源系统也可以改装到现有的遮阳篷上。

    Method for obtaining reversible resistance switches on a PCMO thin film when integrated with a highly crystallized seed layer
    100.
    发明申请
    Method for obtaining reversible resistance switches on a PCMO thin film when integrated with a highly crystallized seed layer 有权
    当与高度结晶的种子层集成时,获得PCMO薄膜上的可逆电阻开关的方法

    公开(公告)号:US20050037520A1

    公开(公告)日:2005-02-17

    申请号:US10640770

    申请日:2003-08-13

    摘要: A method for obtaining reversible resistance switches on a PCMO thin film when integrated with a highly crystallized seed layer includes depositing, by MOCVD, a seed layer of PCMO, in highly crystalline form, thin film, having a thickness of between about 50 Å to 300 Å, depositing a second PCMO thin film layer on the seed layer, by spin coating, having a thickness of between about 500 Å to 3000 Å, to form a combined PCMO layer; increasing the resistance of the combined PCMO film in a semiconductor device by applying a negative electric pulse of between about −4V to −5V, having a pulse width of between about 75 nsec to 1 μsec; and decreasing the resistance of the combined PCMO layer in a semiconductor device by applying a positive electric pulse of between about +2.5V to +4V, having a pulse width greater than 2.0 μsec.

    摘要翻译: 当与高度结晶的种子层集成时,用于获得PCMO薄膜上的可逆电阻开关的方法包括通过MOCVD沉积高度结晶形式的PCMO的种子层,薄膜的厚度为约50埃至300埃 通过旋转涂覆沉积种子层上的第二PCMO薄膜层,其厚度为约500埃至3000埃以形成组合的PCMO层; 通过施加约-4V至-5V之间的脉冲宽度在约75ns至1个音箱之间的负电脉冲来增加半导体器件中组合的PCMO膜的电阻; 并且通过施加脉冲宽度大于2.0个音箱的约+ 2.5V至+ 4V之间的正电脉冲来降低半导体器件中组合的PCMO层的电阻。