摘要:
An insulative layer on a semiconductor substrate and a method of fabricating the structure includes the steps of depositing a single crystal layer of rare earth oxide on a semiconductor substrate to provide electrical insulation and thermal management. The rare earth oxide is crystal lattice matched to the substrate. A layer of single crystal IIIOxNy is formed in overlying relationship on the rare earth oxide by transitioning from the layer of rare earth oxide to a single crystal layer of IIIOxNy within a one wafer single epitaxial process. In the preferred embodiment the substrate is silicon, the rare earth oxide is Gd2O3, and the IIIOxNy includes AlOxNy.
摘要翻译:半导体衬底上的绝缘层和制造该结构的方法包括以下步骤:在半导体衬底上沉积稀土氧化物的单晶层以提供电绝缘和热管理。 稀土氧化物与基体晶格匹配。 在一个晶片单个外延工艺中,通过从稀土氧化物层到IIIOxNy的单晶层的过渡,在稀土氧化物上以覆盖关系形成一层单晶IIIOxNy。 在优选实施例中,衬底是硅,稀土氧化物是Gd 2 O 3,IIIO x N y包括AlO x N y。
摘要:
A modular display booth system is disclosed. The booth comprises walls, inserts, and toolless fasteners. The system is configured for efficient assembly and disassembly. The modular display booth system may be stored entirely on a single dolly for ease of transportation, coordination, and in warehouse alterations.
摘要:
The use of rare-earth (RE and O, N, P) based materials to transition between two different semiconductor materials and enable up and/or down conversion of incident radiation is disclosed. Rare earth based oxides, nitrides and phosphides provide a wide range of lattice spacing enabling, compressive, tensile or stress-free lattice matching with Group IV, III-V, and Group II-VI compounds.
摘要:
Infrared imaging at wavelengths longer than the silicon bandgap energy (>1100 nm) typically require expensive focal plane arrays fabricated from compound semiconductors (InSb or HgCdTe) or use of slower silicon microbolometer technology. Furthermore, these technologies are available in relatively small array sizes, whereas silicon focal plane arrays are easily available with 10 megapixels or more array size. A new technique is disclosed to up convert infrared light to wavelengths detectable by silicon focal plane arrays, or other detector technologies, thereby enabling a low-cost, high pixel count infrared imaging system.
摘要:
Methods for preparing dry powders having hydrophobic and hydrophilic components comprise combining solutions of the components and spray drying them simultaneously in a spray dryer. The hydrophilic and hydrophobic component are separately dissolved in separate solvents and directed simultaneously through a nozzle, usually a coaxial nozzle, into the spray dryer. The method provides dry powders having relatively uniform characteristics.
摘要:
A pupilometer comprises image capturing means, illumination means comprising two spaced apart light sources, stimulation means, and image processing software, the illumination means generating and emitting light of a first wave-length, and the stimulation means generating and emitting light of a second wavelength. The illumination means is arranged to one or both sides of said image capturing means and, in use, shines light towards the eyeball, the image processing software receiving data from the image capturing means, and by processing said data according to an algorithm establishes the distance between the surface of the eyeball and the camera.
摘要:
Investment performance indices and methods of their formulation are described. The indices are determined by selecting a representative subset of assets (e.g., exchange-traded index funds) from a relatively larger number of possibilities in a given asset class. A performance index for the asset class is created by determining optimized weightings in each asset in the subset. The weightings can be optimized according to any number of optimization algorithms, including MVO, CVaR, and G-CAPM and tailored to a given investor risk profile. One or more “investor-centered” indices may be generated in this manner, for the asset class.
摘要:
A bearing arrangement to reduce the effects of thermal expansion in a marine transmission includes a pinion gear thrust bearing, a clutch shaft thrust bearing, a shaft roller bearing and a thrust washer. The clutch shaft thrust bearing is retained on one end of a clutch shaft and the shaft roller bearing is retained on the other end of the clutch shaft. A pinion gear is rotatably retained on the clutch shaft. The pinion gear thrust bearing is retained on the pinion gear with a bearing retainer. The thrust washer is retained on the bearing retainer. An end of the clutch shaft thrust bearing rotates relative to the thrust washer and makes contact therewith. The length of thermal expansion in the transmission housing is limited to the distance between the opposing ends of the two thrust bearings.
摘要:
A connection system for sealingly interconnecting components of a high pressure fluid flow system, for example, an automobile engine air intake. In one embodiment, the system includes a conduit defining a groove that is locked in a corresponding groove defined by a component, for example, an engine intake. An interlock ring is placed in the conduit groove. A clamp is placed over the interlock ring, however, the clamp and ring can be an integral component. When tightened, the clamp forces the ring into the conduit groove, which presses the conduit into sealing and/or locking engagement with the component groove. A corresponding method of installing the conduit with the connection assembly includes fitting the conduit over the component, fitting the ring in the conduit groove, and clamping the ring into the conduit groove to sealingly couple the conduit to the component.
摘要:
A method of growing III-N semiconducting material on a silicon substrate including the steps of growing a layer of epitaxial rare earth oxide on a single crystal silicon substrate and modifying the surface of the layer of epitaxial rare earth oxide with nitrogen plasma. The method further includes the steps of growing a layer of low temperature epitaxial gallium nitride on the modified surface of the layer of epitaxial rare earth oxide and growing a layer of bulk epitaxial III-N semiconductive material on the layer of low temperature epitaxial gallium nitride.