公开(公告)号：US4032364A

公开(公告)日：1977-06-28

申请号：US682499

申请日：1976-05-03

申请人： Thomas R. Anthony ,  Harvey E. Cline

发明人： Thomas R. Anthony ,  Harvey E. Cline

IPC分类号： H01L21/24 ,  H01L29/04 ,  H01L29/74 ,  H01L31/111 ,  H01L21/225

CPC分类号： H01L29/74 ,  H01L21/24 ,  H01L29/04 ,  H01L31/1113

摘要： A semiconductor controlled rectifier has a lamellar body of semiconductor material of at least one group of four alternate first and second regions of opposite type conductivity. The second regions are made from recrystallized semiconductor material of the first regions and contain a sufficient level of concentration of a dopant impurity to impart thereto the opposite type conductivity. It is recrystallized material with solid solubility of the impurity therein. The controlled rectifier is turned on and off by either a control electrode or a source of illumination.

公开(公告)号：US4031607A

公开(公告)日：1977-06-28

申请号：US681600

申请日：1976-04-29

申请人： Harvey E. Cline ,  Thomas R. Anthony ,  Richard A. Kokosa ,  E. Duane Wolley

发明人： Harvey E. Cline ,  Thomas R. Anthony ,  Richard A. Kokosa ,  E. Duane Wolley

IPC分类号： C30B13/02 ,  H01L21/00 ,  H01L21/18 ,  H01L21/306 ,  H01L21/761 ,  H01L27/08 ,  H01L29/00 ,  B01J17/00

CPC分类号： H01L21/00 ,  C30B13/02 ,  H01L21/185 ,  H01L21/30604 ,  H01L21/761 ,  H01L27/0817 ,  H01L29/00 ,  Y10S148/088

摘要： A minority carrier isolation barrier in a body of semiconductor material is formed by the migration of a suitable metal-rich liquid zone of an impurity material through the semiconductor body. A thermal gradient zone melting process is practiced to produce a region of recrystallized semiconductor material of the body having solid solubility of an impurity therein to impart a level of minority carrier lifetime thereto which is different from that level of minority carrier lifetime of the body.

摘要翻译： 半导体材料体中的少数载流子隔离屏障是通过半导体本体的杂质材料的合适的富金属液体区的迁移而形成的。 实施热梯度区熔融工艺以产生具有其中的杂质的固溶度的本体再结晶半导体材料的区域，以赋予与该体的少数载流子寿命水平不同的少数载流子寿命。

公开(公告)号：US4024420A

公开(公告)日：1977-05-17

申请号：US590866

申请日：1975-06-27

申请人： Thomas R. Anthony ,  Harvey E. Cline

发明人： Thomas R. Anthony ,  Harvey E. Cline

IPC分类号： G21H1/06 ,  G21D7/00

CPC分类号： G21H1/06

摘要： A deep diode atomic battery is made from a bulk semiconductor crystal containing three-dimensional arrays of columnar and lamellar P-N junctions. The battery is powered by gamma rays and x-ray emission from a radioactive source embedded in the interior of the semiconductor crystal.

摘要翻译： 深二极管原子电池由包含柱状和层状P-N结的三维阵列的体半导体晶体制成。 电池由伽马射线和来自嵌入在半导体晶体内部的放射源的X射线发射提供动力。

公开(公告)号：US4012236A

公开(公告)日：1977-03-15

申请号：US645675

申请日：1975-12-31

申请人： Thomas R. Anthony ,  Harvey E. Cline

发明人： Thomas R. Anthony ,  Harvey E. Cline

IPC分类号： H01L21/208 ,  C30B13/02 ,  H01L21/24 ,  H01L21/228

CPC分类号： H01L21/24 ,  C30B13/02

摘要： The geometric configuration of a molten zone migrating through a solid body of semiconductor material during thermal gradient zone melting is maintained by simultaneous noncentro-symmetric and secondary rotation of the solid body.

摘要翻译： 在热梯度区熔化期间通过半导体材料的固体迁移的熔融区的几何构型通过固体的同时非中心对称和二次旋转来维持。

公开(公告)号：US3998653A

公开(公告)日：1976-12-21

申请号：US665277

申请日：1976-03-09

申请人： Thomas R. Anthony ,  Harvey E. Cline ,  Mike F. Chang

发明人： Thomas R. Anthony ,  Harvey E. Cline ,  Mike F. Chang

IPC分类号： B08B3/10 ,  B08B3/12 ,  H01L21/306

CPC分类号： H01L21/306 ,  B08B3/10 ,  B08B3/12

摘要： A solution of potassium hydroxide is employed to remove the reaction products of aluminum migrated through silicon-semiconductor material by thermal gradient zone melting processing.

摘要翻译： 使用氢氧化钾溶液通过热梯度区熔融处理除去通过硅半导体材料迁移的铝的反应产物。

公开(公告)号：US3990093A

公开(公告)日：1976-11-02

申请号：US553170

申请日：1975-02-26

申请人： Harvey E. Cline ,  Thomas R. Anthony

发明人： Harvey E. Cline ,  Thomas R. Anthony

IPC分类号： C30B13/02 ,  C30B13/06 ,  H01L21/00 ,  H01L21/24 ,  H01L21/285 ,  H01L21/74 ,  H01L29/78 ,  H01L23/48 ,  H01L29/04 ,  H01L29/06

CPC分类号： H01L21/746 ,  C30B13/02 ,  C30B13/06 ,  H01L21/00 ,  H01L21/24 ,  H01L21/28575 ,  H01L21/74 ,  H01L2924/0002

摘要： A deep buried electrical layer is provided in a semiconductor device by thermal gradient zone melting.

摘要翻译： 通过热梯度区熔化在半导体器件中提供深埋电层。

公开(公告)号：US3988770A

公开(公告)日：1976-10-26

申请号：US559262

申请日：1975-03-17

申请人： Thomas R. Anthony ,  Harvey E. Cline

发明人： Thomas R. Anthony ,  Harvey E. Cline

IPC分类号： H01L21/24 ,  H01L21/761 ,  H01L27/08 ,  H01L29/04 ,  H01L29/06 ,  H01L23/48

CPC分类号： H01L21/761 ,  H01L21/24 ,  H01L27/0814 ,  H01L29/045 ,  H01L29/0684 ,  H01L2924/0002

摘要： Deep finger diodes in a body of semiconductor material are fabricated by a thermal gradient zone melting process. A liquid wire or droplet is migrated into the body through one surface to a depth less than the thickness of the body. The migration of the liquid wire or droplet is reversed to remove the wire or droplet from the body leaving a recrystallized material of the body having solid solubility of a material therein.

摘要翻译： 通过热梯度区熔化工艺制造半导体材料体中的深二极管。 液体线或液滴通过一个表面迁移到身体中，深度小于身体的厚度。 液体线或液滴的迁移被反转以从身体移除线或液滴，留下体内具有固体溶解度的再结晶材料。

公开(公告)号：US3988766A

公开(公告)日：1976-10-26

申请号：US464801

申请日：1974-04-29

申请人： Thomas R. Anthony ,  Harvey E. Cline

发明人： Thomas R. Anthony ,  Harvey E. Cline

IPC分类号： H01L21/208 ,  H01L21/18 ,  H01L21/24 ,  H01L21/331 ,  H01L29/00 ,  H01L29/04 ,  H01L29/06 ,  H01L29/73 ,  H01L29/74 ,  H01L7/00 ,  H01L29/167

CPC分类号： H01L29/0684 ,  H01L21/185 ,  H01L21/24 ,  H01L29/00 ,  H01L29/045

摘要： A droplet of alloy material containing at least two semiconductor dopant type elements, each of which has a different ratio of diffusivity, is thermomigrated by a thermal gradient zone melting process through a body of semiconductor material leaving behind a recrystallized region of semiconductor material containing at least two dopant materials therein. Following thermomigration of the droplet, the body of semiconductor material is subjected to a post-thermomigration heat treatment at an appropriate temperature to allow the dopants in the region produced by thermomigration to diffuse substantially perpendicular to that region into the remaining material of the body. The slower diffusing dopant species is largely left behind in the region to form a region of conductivity type determined by the slower diffusing species while the faster diffusing species will diffuse outward and form an annulus around the recrystallized region of a conductivity type determined by the faster diffusing species. The original semiconductor material of the body will form a third conductivity type region.With three dopants of different diffusivity in the alloy droplet it is possible to produce four regions of different type conductivity (including the original body of semiconductor material) with a single droplet thermomigration.

摘要翻译： 含有至少两种具有不同扩散率的半导体掺杂剂型元素的合金材料液滴通过半导体材料体的热梯度区熔融工艺热转移，留下至少含有半导体材料的再结晶区域 两种掺杂剂材料。 在液滴的热迁移之后，半导体材料的主体在适当的温度下进行后热转移热处理，以允许通过热迁移产生的区域中的掺杂剂基本上垂直于该区域扩散到身体的剩余材料中。 较慢的扩散掺杂剂物质在该区域中大部分留下，以形成由较慢扩散物质确定的导电类型区域，而较快的扩散物质将向外扩散，并在导电类型的再结晶区域周围形成环，由更快的扩散 种类。 身体的原始半导体材料将形成第三导电类型区域。

公开(公告)号：US3988762A

公开(公告)日：1976-10-26

申请号：US474033

申请日：1974-05-28

申请人： Harvey E. Cline ,  Thomas R. Anthony ,  Richard A. Kokosa ,  E. Duane Wolley

发明人： Harvey E. Cline ,  Thomas R. Anthony ,  Richard A. Kokosa ,  E. Duane Wolley

IPC分类号： H01L21/761 ,  H01L21/00 ,  H01L21/18 ,  H01L21/76 ,  H01L27/08 ,  H01L29/00 ,  H01L27/04 ,  H01L29/04 ,  H01L29/167 ,  H01L29/207

CPC分类号： H01L21/00 ,  H01L21/185 ,  H01L21/76 ,  H01L27/0817 ,  H01L29/00 ,  Y10S438/904

摘要： A minority carrier isolation barrier in a body of semiconductor material is formed by the migration of a suitable metal-rich liquid zone of an impurity material through the semiconductor body. A thermal gradient zone melting process is practiced to produce a region of recrystallized semiconductor material of the body having solid solubility of an impurity therein to impart a level of minority carrier lifetime thereto which is different from that level of minority carrier lifetime of the body.

摘要翻译： 半导体材料体中的少数载流子隔离屏障是通过半导体本体的杂质材料的合适的富金属液体区的迁移而形成的。 实施热梯度区熔融工艺以产生具有其中的杂质的固溶度的本体再结晶半导体材料的区域，以赋予与该体的少数载流子寿命水平不同的少数载流子寿命。

公开(公告)号：US3936319A

公开(公告)日：1976-02-03

申请号：US411010

申请日：1973-10-30

申请人： Thomas R. Anthony ,  Harvey E. Cline ,  Donald M. Winegar

发明人： Thomas R. Anthony ,  Harvey E. Cline ,  Donald M. Winegar

IPC分类号： H01L21/24 ,  H01L27/142 ,  H01L31/00 ,  H01L15/02

CPC分类号： H01L31/00 ,  H01L21/242 ,  H01L31/047 ,  Y02E10/50 ,  Y10S148/033 ,  Y10S438/965

摘要： A solar cell with improved efficiency is provided with a convoluted P-N junction whereby a higher proportion of carriers produced by exposure of the solar cell to a source of radiation will be collected by the P-N junction rather than being lost by recombination. The solar cell has an increased resistance to radiation damage. The solar cell is made from a body of semiconductor material in which two regions of opposite type conductivity are formed. The material of one region is substantially the same as the body and the material of the other region is recrystallized material of the first region having solid solubility of a metal therein to impart a selective type conductivity and resistivity thereto.

摘要翻译： 具有提高效率的太阳能电池被提供有一个卷积的P-N结，由此通过太阳能电池暴露于辐射源产生的更高比例的载流子将被P-N结收集，而不是被重组丢失。 太阳能电池具有增加的抗辐射损伤能力。 太阳能电池由半导体材料体制成，其中形成相反导电性的两个区域。 一个区域的材料与主体基本相同，另一区域的材料是其中具有固溶度的第一区域的再结晶材料，以赋予其选择性导电性和电阻率。