公开(公告)号：US08319808B2

公开(公告)日：2012-11-27

申请号：US13112080

申请日：2011-05-20

申请人： Tetsuya Sadowara ,  Eiichi Yamanishi ,  Hiroyuki Okuyama ,  Yoshihito Hiroe ,  Hiromasa Tanaka ,  Yasuaki Okamoto

发明人： Tetsuya Sadowara ,  Eiichi Yamanishi ,  Hiroyuki Okuyama ,  Yoshihito Hiroe ,  Hiromasa Tanaka ,  Yasuaki Okamoto

IPC分类号： B41J29/16

CPC分类号： B41J2/355

摘要： According to one embodiment, there is provided an image forming apparatus, including an accommodation unit, an image forming unit, an image reading unit, an image erasing unit, a first medium processing unit, and a second medium processing unit. The first medium processing unit forms the image on the recording medium carried from the accommodation unit and discharges the recording medium on which the image is formed, based on the setting of a first image process mode. The second medium processing unit forms a test image on the recording medium carried from the accommodation unit, reads the test image, erases the test image, and returns the recording medium to the accommodation unit, based on a setting of a second image process mode.

摘要翻译： 根据一个实施例，提供了一种图像形成装置，包括收纳单元，图像形成单元，图像读取单元，图像擦除单元，第一介质处理单元和第二介质处理单元。 第一介质处理单元在从容纳单元承载的记录介质上形成图像，并且基于第一图像处理模式的设置对形成有图像的记录介质进行排出。 第二介质处理单元在从存放单元携带的记录介质上形成测试图像，读取测试图像，擦除测试图像，并且基于第二图像处理模式的设置将记录介质返回到存储单元。

公开(公告)号：US07789458B2

公开(公告)日：2010-09-07

申请号：US12141494

申请日：2008-06-18

申请人： Susumu Suzuki ,  Nobuhiro Iwai ,  Taro Ikeda ,  Naoki Tanaka ,  Hiroyuki Okuyama ,  Michiaki Okabe ,  Tsuyoshi Iwasaki ,  Toru Mogi ,  Koji Ishimaru ,  Takashi Ashida

发明人： Susumu Suzuki ,  Nobuhiro Iwai ,  Taro Ikeda ,  Naoki Tanaka ,  Hiroyuki Okuyama ,  Michiaki Okabe ,  Tsuyoshi Iwasaki ,  Toru Mogi ,  Koji Ishimaru ,  Takashi Ashida

IPC分类号： B60N99/00

CPC分类号： B60Q1/0491 ,  B60Q1/0441 ,  B62D25/163

摘要： A structure to couple exterior components of a vehicle includes a first exterior component and a second exterior component located apart from the first exterior component, wherein the first exterior component comprises an upper protrusion configured to overlap the second exterior component, and wherein the first exterior component comprises a side protrusion configured to overlap the second exterior component. A method to couple exterior components of a vehicle includes providing a protrusion about at least a portion of a first exterior component, installing the first exterior component proximal to a second exterior component, overlapping the protrusion of the first exterior component about a at least a portion of the second exterior component, interposing an elastic member between a peripheral surface of the first exterior component and an edge of the second exterior component, and positioning the elastic member beneath the protrusion of the first exterior component.

摘要翻译： 耦合车辆外部部件的结构包括第一外部部件和与第一外部部件分开的第二外部部件，其中第一外部部件包括被配置为与第二外部部件重叠的上部突起，并且其中第一外部部件 包括配置成与第二外部部件重叠的侧部突起。 耦合车辆外部部件的方法包括提供围绕第一外部部件的至少一部分的突出部，将第一外部部件安装在靠近第二外部部件的位置，与第一外部部件的突起重叠，至少部分 在所述第二外部部件的外周表面和所述第二外部部件的边缘之间插入弹性部件，并且将所述弹性部件定位在所述第一外部部件的突出部下方。

公开(公告)号：US07706022B2

公开(公告)日：2010-04-27

申请号：US11451524

申请日：2006-06-12

申请人： Hiroyuki Okuyama

发明人： Hiroyuki Okuyama

IPC分类号： H04N1/40

CPC分类号： H04N1/6027

摘要： An image forming apparatus according to the invention is characterized by including; an input unit that inputs first color data; a first color converting unit that converts the first color data into a black single color data; a second color converting unit that converts the first color data into second color data; a brightness correcting unit that corrects brightness of the black single color data such that brightness of the black single color data converted by the first color converting unit is equal to brightness of the second color data converted by the second color converting unit; and an image forming unit that prints image data on a recording medium. According to the image forming apparatus, in the image forming apparatus that uses both color conversion processing and black conversion processing, even if image data continuously changes from a chromatic color to an achromatic color, it is possible to reduce “brightness discontinuity”.

摘要翻译： 根据本发明的图像形成装置的特征在于包括： 输入单元，其输入第一颜色数据; 第一颜色转换单元，其将第一颜色数据转换为黑色单色数据; 第二颜色转换单元，其将所述第一颜色数据转换为第二颜色数据; 亮度校正单元，其校正黑色单色数据的亮度，使得由第一颜色转换单元转换的黑色单色数据的亮度等于由第二颜色转换单元转换的第二颜色数据的亮度; 以及在记录介质上打印图像数据的图像形成单元。 根据图像形成装置，在使用颜色转换处理和黑色转换处理的图像形成装置中，即使图像数据从彩色颜色连续变化为无彩色，也可以减少“亮度不连续”。

公开(公告)号：US07452789B2

公开(公告)日：2008-11-18

申请号：US11620511

申请日：2007-01-05

申请人： Hiroyuki Okuyama

发明人： Hiroyuki Okuyama

IPC分类号： H01L21/00 ,  H01L21/36 ,  H01L31/20

CPC分类号： C30B25/02 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02645 ,  H01L21/02647 ,  H01L21/02661 ,  H01L33/007

摘要： A method for forming an underlayer composed of a GaN-based compound semiconductor is provided. In this method, at the time of epitaxial growth of an underlayer on the surface of a sapphire substrate, no gap is generated between the underlayer and the surface of the sapphire substrate. The method for forming an underlayer composed of a GaN-based compound semiconductor includes the steps of forming strip seed layers composed of a GaN-based compound semiconductor on the surface of a sapphire substrate, forming a crystal growth promoting layer composed of a GaN-based compound semiconductor on the top surfaces and both the side surfaces of the seed layers, and on the exposed surfaces of the sapphire substrate, and epitaxially growing an underlayer composed of a GaN-based compound semiconductor from the parts of the crystal growth promoting layer.

摘要翻译： 提供一种形成由GaN基化合物半导体构成的底层的方法。 在该方法中，在蓝宝石衬底的表面上的底层外延生长时，在底层和蓝宝石衬底的表面之间不产生间隙。 用于形成由GaN基化合物半导体构成的底层的方法包括以下步骤：在蓝宝石衬底的表面上形成由GaN基化合物半导体构成的带状晶种层，形成由GaN基组成的晶体生长促进层 在种子层的顶表面和两个侧表面上以及蓝宝石衬底的暴露表面上的化合物半导体，以及从晶体生长促进层的部分外延生长由GaN基化合物半导体构成的底层。

公开(公告)号：US20070236711A1

公开(公告)日：2007-10-11

申请号：US11399040

申请日：2006-04-06

申请人： Hiroyuki Okuyama

发明人： Hiroyuki Okuyama

IPC分类号： G03F3/08

CPC分类号： H04N1/6022 ,  H04N1/6072

摘要： A technology that contributes to improvement of visibility of an image containing an achromatic color is provided. A color space information acquiring unit for acquiring color space information of a pixel contained in image data; a saturation determination unit for determining the saturation of the pixel whose color space information is acquired on the basis of the color space information acquired by the color space information acquiring unit; and a color space information conversion unit for converting the color space information of the pixel whose saturation is determined not to exceed a predetermined threshold by the saturation determination unit out of the pixels contained in the image data into the color space information to be printed with black toner by a predetermined image forming apparatus are provided.

摘要翻译： 提供了有助于提高包含无彩色的图像的可视性的技术。 颜色空间信息获取单元，用于获取包含在图像数据中的像素的颜色空间信息; 饱和度确定单元，用于基于由颜色空间信息获取单元获取的颜色空间信息来确定获取了颜色空间信息的像素的饱和度; 以及颜色空间信息转换单元，用于通过饱和度确定单元将包含在图像数据中的像素中的饱和度不超过预定阈值的像素的颜色空间信息转换成要用黑色打印的颜色空间信息 提供了通过预定图像形成装置的调色剂。

公开(公告)号：US20070164292A1

公开(公告)日：2007-07-19

申请号：US11622719

申请日：2007-01-12

申请人： Hiroyuki Okuyama

发明人： Hiroyuki Okuyama

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/16 ,  H01L33/24 ,  H01S5/0213 ,  H01S5/10 ,  H01S5/3202 ,  H01S5/32341

摘要： A GaN semiconductor light-emitting element is provided. The GaN semiconductor light-emitting element includes an island-type seed region composed of a GaN-based compound semiconductor disposed on a substrate; an underlying layer having a three-dimensional shape composed of a GaN-based compound semiconductor, disposed on at least the seed region; a first GaN-based compound semiconductor layer of a first conductivity type, an active layer composed of a GaN-based compound semiconductor, and a second GaN-based compound semiconductor layer of a second conductivity type disposed in that order on the underlying layer; a first electrode electrically connected to the first GaN-based compound semiconductor layer; and a second electrode disposed on the second GaN-based compound semiconductor layer. The top face of the seed region is the A plane, and at least one side face of the underlying layer is the S plane.

摘要翻译： 提供GaN半导体发光元件。 GaN半导体发光元件包括由设置在基板上的GaN类化合物半导体构成的岛型种子区域; 设置在至少种子区域上的具有由GaN类化合物半导体构成的三维形状的下层; 第一导电类型的第一GaN基化合物半导体层，由GaN基化合物半导体构成的有源层和第二导电类型的第二GaN基化合物半导体层依次布置在下层上; 电连接到第一GaN基化合物半导体层的第一电极; 以及设置在第二GaN基化合物半导体层上的第二电极。 种子区域的顶面是A平面，底层的至少一个侧面是S平面。

公开(公告)号：US20060203268A1

公开(公告)日：2006-09-14

申请号：US11076326

申请日：2005-03-10

申请人： Hiroyuki Okuyama

发明人： Hiroyuki Okuyama

IPC分类号： G03F3/08 ,  G06F15/00

CPC分类号： G03G15/5062 ,  G03G15/01 ,  G03G2215/00755 ,  G03G2215/0164

摘要： Even when an image signal is converted into an image signal with a limited amount of toner adhesion, the gradation is prevented from changing rapidly near the limiting value and therefore the image quality is prevented from deteriorating. An amount-of-adhesion converting circuit 301 converts image data for each color plane into first amount-of-toner-adhesion data. On the basis of a preset amount-of-toner-adhesion threshold value table, an amount-of-toner-adhesion reduction computing circuit 303 converts the first amount-of-toner-adhesion data for each color plane into second amount-of-toner-adhesion data with a limited amount of toner adhesion. Then, an image signal converting circuit 304 converts the second amount-of-toner-adhesion data into an image signal. In such a method, since parameters in the amount-of-toner-adhesion threshold value table are set arbitrarily, a rapid change in gradation can be suppressed near the limiting value.

公开(公告)号：US06686611B2

公开(公告)日：2004-02-03

申请号：US10094219

申请日：2002-03-08

申请人： Hiroyuki Okuyama ,  Hiroshi Nakajima ,  Fumihiko Nakamura

发明人： Hiroyuki Okuyama ,  Hiroshi Nakajima ,  Fumihiko Nakamura

IPC分类号： H01L3300

CPC分类号： B82Y20/00 ,  H01L33/14 ,  H01L33/32 ,  H01S5/34333

摘要： In a nitride semiconductor of BpAlqGarInsN (0≦p≦1, 0≦q≦1, 0≦r≦1, 0≦s≦1, p+q+r+s=1), in particular a p-type nitride compound semiconductor, a point defect concentration of the p-type semiconductors is set to 1×1019 cm−3 or more. This makes it possible to obtain a high carrier concentration at room temperature.

摘要翻译： 在BpAlqGarInsN（0≤p≤1,0<= r <=1,0,0≤s≤1,0≤s≤1，p + q + r + s = 1）的氮化物半导体中， 特别是p型氮化物化合物半导体，将p型半导体的点缺陷浓度设定为1×10 19 cm -3以上。 这使得可以在室温下获得高载流子浓度。

公开(公告)号：US06429032B1

公开(公告)日：2002-08-06

申请号：US09481122

申请日：2000-01-11

申请人： Hiroyuki Okuyama ,  Hiroshi Nakajima ,  Fumihiko Nakamura

发明人： Hiroyuki Okuyama ,  Hiroshi Nakajima ,  Fumihiko Nakamura

IPC分类号： H01L2160

CPC分类号： B82Y20/00 ,  H01L33/14 ,  H01L33/32 ,  H01S5/34333

摘要： In a nitride semiconductor of BpAlqGarInsN (0≦p≦1, 0≦q≦1, 0≦r≦1, 0≦s≦1, p+q+r+s=1), in particular a p-type nitride compound semiconductor, a point defect concentration of the p-type semiconductors is set to 1×1019 cm−3 or more. This makes it possible to obtain a high carrier concentration at room temperature.

摘要翻译： 在BpAlqGarInsN（0≤p≤1,0<= r <=1,0,0≤s≤1,0≤s≤1，p + q + r + s = 1）的氮化物半导体中， 特别是p型氮化物化合物半导体，将p型半导体的点缺陷浓度设定为1×10 19 cm -3以上。 这使得可以在室温下获得高载流子浓度。

公开(公告)号：US5865897A

公开(公告)日：1999-02-02

申请号：US596384

申请日：1996-02-09

申请人： Satoshi Ito ,  Satoshi Taniguchi ,  Masao Ikeda ,  Hiroyuki Okuyama ,  Hironori Tsukamoto ,  Masaharu Nagai ,  Koshi Tamamura

发明人： Satoshi Ito ,  Satoshi Taniguchi ,  Masao Ikeda ,  Hiroyuki Okuyama ,  Hironori Tsukamoto ,  Masaharu Nagai ,  Koshi Tamamura

IPC分类号： C23C14/00 ,  C23C14/06 ,  C30B23/02 ,  H01L21/363 ,  H01L21/365 ,  H01L33/00 ,  H01L33/28 ,  H05H13/00

CPC分类号： H01L33/285 ,  C23C14/0026 ,  C23C14/0629 ,  C30B23/02 ,  C30B29/48 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02474 ,  H01L21/02477 ,  H01L21/02551 ,  H01L21/0256 ,  H01L21/02579 ,  H01L21/02631 ,  H01L33/0087

摘要： A film of a II-VI group compound semiconductor of at least one of elements belonging to the II group of the periodic table and at least one of elements belonging to the VI group of the periodic table is deposited on a substrate. When the film is deposited on the substrate, a plasma of nitrogen in an excited state is applied to the substrate while removing charged particles from said plasma by a charged particle removing means. The deposited film of a nitrogen-doped II-VI group compound semiconductor has an increased percentage of activated nitrogen atoms and improved crystallinity.

摘要翻译： PCT No.PCT / JP95 / 00854 Sec。 371日期1996年2月9日 102（e）日期1996年2月9日PCT提交1995年4月28日PCT公布。 公开号WO95 / 34093 日期1995年12月14日属于周期表II族的至少一种元素的II-VI族化合物半导体的膜和属于周期表的VI族的元素中的至少一种沉积在基板上 。 当膜沉积在衬底上时，将激发态的氮等离子体施加到衬底上，同时通过带电粒子去除装置从所述等离子体中除去带电粒子。 氮掺杂的II-VI族化合物半导体的沉积膜具有增加的活性氮原子百分比和改善的结晶度。