公开(公告)号：US20130271108A1

公开(公告)日：2013-10-17

申请号：US13995884

申请日：2011-10-25

申请人： Yong Lu

发明人： Yong Lu

IPC分类号： G05F3/02

CPC分类号： G05F3/02 ,  H02H7/04 ,  H02J3/006 ,  H02J3/06 ,  H02J3/38 ,  Y04S10/20 ,  Y04S20/14

摘要： The embodiments of the present invention provide a cellular power supply network, an intelligent gateway and a power supply control method thereof. The cellular power supply network further comprises: at least one cellular power supply layer formed by a plurality of transformers connected as a cellular structure. In the embodiments of the present invention, the electricity energy can be transferred from one transformer to another transformer demanding power as needed, so that the power is more reasonably distributed and the energy utilization rate is improved. In the technical solutions of the present invention, when a certain transformer cannot work normally due to a fault, the electricity energy outside the transformer can be introduced into the user of the transformer using the cellular power supply network, so as to keep continuous power usage. Meanwhile, the transformer can be separated from the power supply network for repairing and maintenance.

摘要翻译： 本发明实施例提供蜂窝电源网络，智能网关及其电源控制方法。 蜂窝电力网络还包括：由作为蜂窝结构连接的多个变压器形成的至少一个蜂窝电力供应层。 在本发明的实施例中，电力能够从一个变压器传递到另一个需要电力的变压器，从而使功率更合理地分配并提高能量利用率。 在本发明的技术方案中，当某个变压器由于故障而不能正常工作时，可以使用蜂窝供电网将变压器外部的电能引入变压器的用户，以保持连续的使用电力 。 同时，变压器可以与供电网络分开进行修理和维护。

公开(公告)号：US08519495B2

公开(公告)日：2013-08-27

申请号：US12372025

申请日：2009-02-17

申请人： Insik Jin ,  Hongyue Liu ,  Yong Lu ,  Xiaobin Wang

发明人： Insik Jin ,  Hongyue Liu ,  Yong Lu ,  Xiaobin Wang

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228

摘要： A magnetic memory device includes a first electrode separated from a second electrode by a magnetic tunnel junction. The first electrode provides a write current path along a length of the first electrode. The magnetic tunnel junction includes a free magnetic layer having a magnetization orientation that is switchable between a high resistance state magnetization orientation and a low resistance state magnetization orientation. The free magnetic layer is spaced from the first electrode a distance of less than 10 nanometers. A current passing along the write current path generates a magnetic field. The magnetic field switches the free magnetic layer magnetization orientation between a high resistance state magnetization orientation and a low resistance state magnetization orientation.

摘要翻译： 磁存储器件包括通过磁性隧道结从第二电极分离的第一电极。 第一电极沿着第一电极的长度提供写入电流路径。 磁性隧道结包括具有可在高电阻状态磁化取向和低电阻状态磁化取向之间切换的磁化取向的自由磁性层。 自由磁性层与第一电极间隔小于10纳米的距离。 沿着写入电流路径的电流产生磁场。 磁场在高电阻状态磁化取向和低电阻状态磁化取向之间切换自由磁层磁化取向。

公开(公告)号：US08289786B2

公开(公告)日：2012-10-16

申请号：US13240359

申请日：2011-09-22

申请人： Henry F. Huang ,  Hai Li ,  Yong Lu

发明人： Henry F. Huang ,  Hai Li ,  Yong Lu

IPC分类号： G11C7/22

CPC分类号： G11C13/0069 ,  G11C7/1006 ,  G11C7/1009 ,  G11C11/1673 ,  G11C11/1675 ,  G11C13/00 ,  G11C13/0004 ,  G11C2013/0076

摘要： Method and apparatus for writing data to a storage array, such as but not limited to an STRAM or RRAM memory array, using a read-mask-write operation. In accordance with various embodiments, a first bit pattern stored in a plurality of memory cells is read. A second bit pattern is stored to the plurality of memory cells by applying a mask to selectively write only those cells of said plurality corresponding to different bit values between the first and second bit patterns.

摘要翻译： 使用读取 - 写入操作将数据写入存储阵列（例如但不限于STRAM或RRAM存储器阵列）的方法和装置。 根据各种实施例，读取存储在多个存储单元中的第一位模式。 第二位模式通过施加掩模来存储到多个存储器单元，以仅选择性地仅写入在第一和第二位模式之间对应于不同位值的所述多个存储单元。

公开(公告)号：US20120245039A1

公开(公告)日：2012-09-27

申请号：US13497069

申请日：2010-09-22

申请人： Frederick P. Roth ,  Joseph C. Mellor ,  Yong Lu ,  Mark Chee

发明人： Frederick P. Roth ,  Joseph C. Mellor ,  Yong Lu ,  Mark Chee

IPC分类号： C40B20/00 ,  C12Q1/68

CPC分类号： C12Q1/6874 ,  C12Q2565/518 ,  C12Q2525/191 ,  C12Q2525/185

摘要： Methods and compositions are provided for performing a set of N DNA sequencing reaction cycles whereby sequence information is obtained for approximately 2*N nucleotide bases.

摘要翻译： 提供了用于进行一组N DNA测序反应循环的方法和组合，其中获得大约2 * N个核苷酸碱基的序列信息。

公开(公告)号：US08203894B2

公开(公告)日：2012-06-19

申请号：US13081170

申请日：2011-04-06

申请人： Chulmin Jung ,  Insik Jin ,  YoungPil Kim ,  Yong Lu ,  Harry Hongyue Liu ,  Andrew John Carter

发明人： Chulmin Jung ,  Insik Jin ,  YoungPil Kim ,  Yong Lu ,  Harry Hongyue Liu ,  Andrew John Carter

IPC分类号： G11C7/22

CPC分类号： G11C11/1673

摘要： A method and apparatus for reading data from a non-volatile memory cell. In some embodiments, a cross-point array of non-volatile memory cells is arranged into rows and columns that are each controlled by a line driver. A read circuit is provided that is capable of reading a logical state of a predetermined memory cell by differentiating a non-integrated first reference value from a non-integrated second reference value. Further, each reference value is measured immediately after configuring the column corresponding to the predetermined memory cell to produce a first and second amount of current.

摘要翻译： 一种用于从非易失性存储单元读取数据的方法和装置。 在一些实施例中，非易失性存储器单元的交叉点阵列被布置成行和列，每个行和列都由线驱动器控制。 提供读取电路，其能够通过将非积分的第一参考值与非积分的第二参考值进行微分来读取预定存储器单元的逻辑状态。 此外，在配置与预定存储单元相对应的列之后立即测量每个参考值以产生第一和第二电流量。

公开(公告)号：US08199563B2

公开(公告)日：2012-06-12

申请号：US13149136

申请日：2011-05-31

申请人： Yiran Chen ,  Hai Li ,  Hongyue Liu ,  Yong Lu ,  Yang Li

发明人： Yiran Chen ,  Hai Li ,  Hongyue Liu ,  Yong Lu ,  Yang Li

IPC分类号： G11C11/00

CPC分类号： G11C11/1657 ,  G11C11/1659 ,  G11C11/1675 ,  Y10S977/935

摘要： A transmission gate-based spin-transfer torque memory unit is described. The memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a source line. A NMOS transistor is in parallel electrical connection with a PMOS transistor and they are electrically connected with the source line and the magnetic tunnel junction data cell. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a polarized write current through the magnetic tunnel junction data cell. The PMOS transistor and the NMOS transistor are separately addressable so that a first write current in a first direction flows through the PMOS transistor and a second write current in a second direction flows through the NMOS transistor.

摘要翻译： 描述基于传输门的自旋转移转矩存储单元。 存储单元包括电耦合到位线和源极线的磁性隧道结数据单元。 NMOS晶体管与PMOS晶体管并联电连接，并且它们与源极线和磁性隧道结数据单元电连接。 磁隧道结数据单元被配置为通过使极化写入电流通过磁性隧道结数据单元在高电阻状态和低电阻状态之间切换。 PMOS晶体管和NMOS晶体管可单独寻址，使得第一方向上的第一写入电流流过PMOS晶体管，并且第二方向的第二写入电流流过NMOS晶体管。

公开(公告)号：US20120103558A1

公开(公告)日：2012-05-03

申请号：US13184951

申请日：2011-07-18

申请人： Pedro Fernandez ,  Shanjiu Chi ,  Amit Kulkarni ,  Liqian Zhai ,  Kelly C. Johnson ,  Yong Lu ,  Mahmoud Elkenaney

发明人： Pedro Fernandez ,  Shanjiu Chi ,  Amit Kulkarni ,  Liqian Zhai ,  Kelly C. Johnson ,  Yong Lu ,  Mahmoud Elkenaney

IPC分类号： F24J3/08

CPC分类号： H05K7/2059 ,  F24T10/10 ,  Y02E10/12

摘要： In one embodiment, the disclosure includes a telecom utility cabinet including a heat load chamber. The telecom utility cabinet also includes an air introducing duct configured to conduct air from the heat load chamber to a geothermal cooling system. The telecom utility cabinet also includes an air discharging duct configured to conduct air from the geothermal cooling system to the heat load chamber. In another embodiment, the disclosure includes a method for managing temperature in a telecom utility cabinet. The method includes introducing air from a heat load chamber to a geothermal cooling system and discharging air from the geothermal cooling system to the heat load chamber.

摘要翻译： 在一个实施例中，本公开包括包括热负荷室的电信实用机柜。 电信实用柜还包括空气引入管道，其构造成将空气从热负荷室传导到地热冷却系统。 电信公用柜还包括一个排气管道，其配置成将空气从地热冷却系统传导到热负荷室。 在另一个实施例中，本公开包括用于管理电信公用柜中的温度的方法。 该方法包括将空气从热负荷室引入地热冷却系统，并将空气从地热冷却系统排放到热负荷室。

公开(公告)号：US20120087175A1

公开(公告)日：2012-04-12

申请号：US13333598

申请日：2011-12-21

申请人： Wenzhong Zhu ,  Yong Lu ,  Xiaobin Wang ,  Yiran Chen ,  Alan Xuguang Wang ,  Xiaohua Lou ,  Haiwen Xi

发明人： Wenzhong Zhu ,  Yong Lu ,  Xiaobin Wang ,  Yiran Chen ,  Alan Xuguang Wang ,  Xiaohua Lou ,  Haiwen Xi

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  G11C11/1659 ,  G11C11/1675

摘要： An apparatus and method for compensating for asymmetric write current in a non-volatile unit cell. The unit cell comprises a switching device and an asymmetric resistive sense element (RSE), such as an asymmetric resistive random access memory (RRAM) element or an asymmetric spin-torque transfer random access memory (STRAM) element. The RSE is physically oriented within the unit cell relative to the switching device such that a hard direction for programming the RSE is aligned with an easy direction of programming the unit cell, and an easy direction for programming the RSE is aligned with a hard direction for programming the unit cell.

摘要翻译： 一种用于补偿非易失性单元中不对称写入电流的装置和方法。 单位单元包括开关装置和非对称电阻感测元件（RSE），诸如非对称电阻随机存取存储器（RRAM）元件或非对称自旋转矩传递随机存取存储器（STRAM）元件。 RSE相对于开关装置在物理上定位在单位单元内，使得用于编程RSE的硬方向与单元单元的简单编程方向对齐，并且用于编程RSE的简单方向与硬方向对齐 编程单元格

公开(公告)号：US20110292716A1

公开(公告)日：2011-12-01

申请号：US13206749

申请日：2011-08-10

申请人： Yong Lu ,  Harry Hongyue Liu

发明人： Yong Lu ,  Harry Hongyue Liu

IPC分类号： G11C11/00

CPC分类号： G11C13/0007 ,  G11C11/1659 ,  G11C11/1675 ,  G11C13/0069 ,  G11C2013/0071 ,  G11C2013/0073 ,  G11C2013/0078 ,  G11C2213/32 ,  G11C2213/79

摘要： Apparatus and associated method for asymmetric write current compensation for resistive sense memory (RSM) cells, such as but not limited to spin-torque transfer random access memory (STRAM) or resistive random access memory (RRAM) cells. In accordance with some embodiments, an RSM cell includes an RSM element coupled to a switching device. The switching device has a plurality of terminals. A control circuit compensates for asymmetric write characteristics of the RSM cell by limiting a range of voltage differentials across the terminals so as to be equal to or less than a magnitude of a source voltage applied to the switching device, thereby providing bi-directional write currents of substantially equal magnitude through the RSM element.

公开(公告)号：US08054673B2

公开(公告)日：2011-11-08

申请号：US12425084

申请日：2009-04-16

申请人： Xuguang Wang ,  Yong Lu ,  Hai Li ,  Hongyue Liu

发明人： Xuguang Wang ,  Yong Lu ,  Hai Li ,  Hongyue Liu

IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C11/22 ,  H01L23/52 ,  H01L23/02

CPC分类号： H01L27/228 ,  G11C11/161 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/14 ,  H01L45/142 ,  H01L45/146 ,  H01L45/147 ,  H01L2924/0002 ,  H01L2924/00

摘要： A memory unit including a first transistor spanning a first transistor region in a first layer of the memory unit; a second transistor spanning a second transistor region in a second layer of the memory unit; a first resistive sense memory (RSM) cell spanning a first memory region in a third layer of the memory unit; and a second RSM cell spanning a second memory region in the third layer of the memory unit, wherein the first transistor is electrically coupled to the first RSM cell, and the second transistor is electrically coupled to the second RSM cell, wherein the second layer is between the first and third layers, wherein the first and second transistor have an transistor overlap region, and wherein the first memory region and the second memory region do not extend beyond the first transistor region and the second transistor region.

摘要翻译： 存储单元，包括跨越存储器单元的第一层中的第一晶体管区域的第一晶体管; 跨越存储器单元的第二层中的第二晶体管区域的第二晶体管; 跨越存储器单元的第三层中的第一存储器区域的第一电阻读出存储器（RSM）单元; 以及跨越存储器单元的第三层中的第二存储器区域的第二RSM单元，其中第一晶体管电耦合到第一RSM单元，并且第二晶体管电耦合到第二RSM单元，其中第二层是 在第一和第三层之间，其中第一和第二晶体管具有晶体管重叠区域，并且其中第一存储区域和第二存储器区域不延伸超过第一晶体管区域和第二晶体管区域。