Rare earth metal-nickel hydrogen occlusive alloy ingot
    95.
    发明授权
    Rare earth metal-nickel hydrogen occlusive alloy ingot 失效
    稀土金属镍氢合金合金锭

    公开(公告)号:US5470404A

    公开(公告)日:1995-11-28

    申请号:US63895

    申请日:1993-05-17

    摘要: A rare earth metal-nickel hydrogen occlusive alloy ingot contains 90 vol % or more of crystals having a crystal grain size of 1 to 50 .mu.m as measured along a short axis of the crystal and 1 to 100 .mu.m as measured along a long axis of the crystal. A method for producing the rare earth metal-nickel hydrogen occlusive alloy ingot involves melting a rare earth metal-nickel alloy and uniformly solidifying the alloy melt to have a thickness of 0.1 to 20 mm under cooling conditions of a cooling rate of 10.degree. to 1000.degree. C./sec and a sub-cooling degree of 10.degree. to 500.degree. C.

    摘要翻译: 稀土金属 - 镍氢合金合金锭包含90体积%以上的晶体尺寸为1〜50μm的结晶,沿着长轴测定为1〜100μm 的水晶。 制备稀土金属 - 镍氢合金合金锭的方法包括在10至1000的冷却速率的冷却条件下熔化稀土金属 - 镍合金并均匀地固化合金熔体,使其厚度为0.1-20mm ℃/秒,次冷度为10〜500℃。

    Syndiotactic propylene copolymer, method for preparing same, and its use

    公开(公告)号:US5373059A

    公开(公告)日:1994-12-13

    申请号:US177339

    申请日:1994-01-04

    IPC分类号: C08F255/02

    CPC分类号: C08F255/02 Y10S526/943

    摘要: A syndiotactic graft copolymer is here disclosed in which a radical polymerizable unsaturated compound is grafted on a propylene homopolymer or copolymer, and this graft copolymer is obtained by heating a homopolymer having a substantially syndiotactic structure of propylene or a copolymer having a substantially syndiotactic structure of propylene and another .alpha.-olefin and a radical polymerizable unsaturated compound such as an unsaturated carboxylic acid or an unsaturated silane in the presence of a radical initiator up to the decomposition temperature or more of the radical initiator. This kind of graft copolymer can be used as a composition for adhesion. The graft copolymer in which the radical polymerizable unsaturated compound is a hydrolyzable unsaturated silane can be converted into a crosslinked polymer by heating in the presence of water, and it can also be converted into a water-crosslinkable resin composition by adding various additive thereto.

    Molded article of crosslinked polyolefin and method for preparing it
    97.
    发明授权
    Molded article of crosslinked polyolefin and method for preparing it 失效
    交联聚烯烃模制品及其制备方法

    公开(公告)号:US5314957A

    公开(公告)日:1994-05-24

    申请号:US992101

    申请日:1992-12-17

    摘要: A method for preparing a molded article of a crosslinked polyolefin which comprises the steps of bringing a composition comprising a copolymer of an alkenylsilane and an olefin and a compound having at least two unsaturated bonds into contact with a catalyst selected from the group consisting of salts of rhodium, alkoxy compounds and metallocene compounds of metals in the group IVa of the periodic table, combinations of the metallocene compounds and organic metal compounds, and then molding the composition, or carrying out the contact simultaneously with the molding, or molding the composition, and then bringing the molded article into contact with the catalyst, and if necessary, further heating the molded article to accelerate a crosslinking reaction.The molded article of the crosslinked polyolefin obtained by the method of the present invention has a high crosslinking density and is excellent in mechanical properties, solvent resistance and heat resistance.

    摘要翻译: 一种制备交联聚烯烃的模制品的方法,包括以下步骤:将包含烯基硅烷和烯烃的共聚物的组合物和具有至少两个不饱和键的化合物与选自以下的催化剂接触: 铑,烷氧基化合物和周期表IVa族金属茂金属化合物,茂金属化合物和有机金属化合物的组合,然后模塑组合物,或与模塑同时进行接触或模塑组合物,以及 然后使模制品与催化剂接触,并且如果需要,进一步加热模制品以加速交联反应。 通过本发明的方法获得的交联聚烯烃的成型品具有高交联密度,机械性能,耐溶剂性和耐热性优异。

    Nonvolatile semiconductor memory device and method of manufacturing the same
    99.
    发明授权
    Nonvolatile semiconductor memory device and method of manufacturing the same 有权
    非易失性半导体存储器件及其制造方法

    公开(公告)号:US08860000B2

    公开(公告)日:2014-10-14

    申请号:US13019630

    申请日:2011-02-02

    IPC分类号: H01L47/00 H01L27/24 H01L45/00

    摘要: A nonvolatile semiconductor memory device in accordance with an embodiment comprises a lower electrode layer, a variable resistance layer, and an upper electrode layer. The lower electrode layer is provided over a substrate. The variable resistance layer is provided on the lower electrode layer and is configured such that an electrical resistance of the variable resistance layer can be changed. The upper electrode layer is provided on the variable resistance layer. The variable resistance layer comprises a carbon nanostructure and metal atoms. The carbon nanostructure is stacked to have a plurality of gaps. The metal atoms are diffused into the gaps.

    摘要翻译: 根据实施例的非易失性半导体存储器件包括下电极层,可变电阻层和上电极层。 下电极层设置在基板上。 可变电阻层设置在下电极层上并且被配置为使得可变电阻层的电阻可以改变。 上电极层设置在可变电阻层上。 可变电阻层包括碳纳米结构和金属原子。 碳纳米结构被堆叠以具有多个间隙。 金属原子扩散到间隙中。