公开(公告)号：US20110265325A1

公开(公告)日：2011-11-03

申请号：US13135620

申请日：2011-07-11

申请人： Kunliang Zhang ,  Min Li ,  Yue Liu ,  Hideaki Fukuzawa ,  Hiromi Yuasa

发明人： Kunliang Zhang ,  Min Li ,  Yue Liu ,  Hideaki Fukuzawa ,  Hiromi Yuasa

IPC分类号： H01B19/00

CPC分类号： H01F41/307 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3106 ,  G11B5/313 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3268 ,  H01L43/08 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49227

摘要： A novel CCP scheme is disclosed for a CPP-GMR sensor in which an amorphous metal/alloy layer such as Hf is inserted between a lower Cu spacer and an oxidizable layer such as Al, Mg, or AlCu prior to performing a pre-ion treatment (PIT) and ion assisted oxidation (IAO) to transform the amorphous layer into a first metal oxide template and the oxidizable layer into a second metal oxide template both having Cu metal paths therein. The amorphous layer promotes smoothness and smaller grain size in the oxidizable layer to minimize variations in the metal paths and thereby improves dR/R, R, and dR uniformity by 50% or more. An amorphous Hf layer may be used without an oxidizable layer, or a thin Cu layer may be inserted in the CCP scheme to form a Hf/PIT/IAO or Hf/Cu/Al/PIT/IAO configuration. A double PIT/IAO process may be used as in Hf/PIT/IAO/Al/PIT/IAO or Hf/PIT/IAO/Hf/PIT/IAO schemes.

公开(公告)号：US20100091412A1

公开(公告)日：2010-04-15

申请号：US12585852

申请日：2009-09-25

申请人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Shuichi Murakami ,  Michiko Hara ,  Kunliang Zhang ,  Min Li ,  Erhard Schreck

发明人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Shuichi Murakami ,  Michiko Hara ,  Kunliang Zhang ,  Min Li ,  Erhard Schreck

IPC分类号： G11B5/33 ,  B05D5/12 ,  C23C16/513 ,  H05H1/24

CPC分类号： G11B5/3906 ,  B82Y10/00 ,  B82Y25/00 ,  C23C8/36 ,  C23C14/081 ,  C23C14/5833 ,  C23C14/5873 ,  G11B5/3163 ,  G11B2005/3996

摘要： A method for manufacturing a magneto-resistance effect element is provided. The magneto-resistance effect element includes a first magnetic layer including a ferromagnetic material, a second magnetic layer including a ferromagnetic material and a spacer layer provided between the first magnetic layer and the second magnetic layer, the spacer layer having an insulating layer and a conductive portion penetrating through the insulating layer. The method includes: forming a film to be a base material of the spacer layer; performing a first treatment using a gas including at least one of oxygen molecules, oxygen atoms, oxygen ions, oxygen plasma and oxygen radicals on the film; and performing a second treatment using a gas including at least one of helium ions, helium plasma, helium radicals, neon ions, neon plasma and neon radicals on the film submitted to the first treatment.

摘要翻译： 提供一种制造磁阻效应元件的方法。 磁阻效应元件包括包括铁磁材料的第一磁性层，包括铁磁材料的第二磁性层和设置在第一磁性层和第二磁性层之间的间隔层，间隔层具有绝缘层和导电 部分穿透绝缘层。 该方法包括：将膜形成为间隔层的基材; 使用包含氧分子，氧原子，氧离子，氧等离子体和氧自由基中的至少一种的气体进行第一处理; 以及使用包含氦离子，氦等离子体，氦原子，氖离子，氖等离子体和氖自由基中的至少一种的气体进行第一处理的第二处理。

公开(公告)号：US20100073828A1

公开(公告)日：2010-03-25

申请号：US12284454

申请日：2008-09-22

申请人： Hui-Chuan Wang ,  Tong Zhao ,  Min Li ,  Kunliang Zhang

发明人： Hui-Chuan Wang ,  Tong Zhao ,  Min Li ,  Kunliang Zhang

IPC分类号： G11B5/127

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/33 ,  G11B5/3929 ,  G11B2005/3996 ,  Y10T428/1114

摘要： A TMR sensor with a free layer having a FL1/FL2/FL3 configuration is disclosed in which FL1 is FeCo or a FeCo alloy with a thickness between 2 and 15 Angstroms. The FL2 layer is made of CoFeB or a CoFeB alloy having a thickness from 2 to 10 Angstroms. The FL3 layer is from 10 to 100 Angstroms thick and has a negative λ to offset the positive λ from FL1 and FL2 layers and is comprised of CoB or a CoBQ alloy where Q is one of Ni, Mn, Tb, W, Hf, Zr, Nb, and Si. Alternatively, the FL3 layer may be a composite such as CoB/CoFe, (CoB/CoFe)n where n is ≧2 or (CoB/CoFe)m/CoB where m is ≧1. The free layer described herein affords a high TMR ratio above 60% while achieving low values for λ (

摘要翻译： 公开了具有FL1 / FL2 / FL3结构的自由层的TMR传感器，其中FL1是FeCo或厚度在2和15埃之间的FeCo合金。 FL2层由厚度为2〜10埃的CoFeB或CoFeB合金制成。 FL3层的厚度为10〜100埃，并且具有负λ以从FL1和FL2层偏移正的λ，由CoB或CoBQ合金组成，其中Q是Ni，Mn，Tb，W，Hf，Zr ，Nb和Si。 或者，FL3层可以是其中n为≥2的CoB / CoFe（CoB / CoFe）n或（CoB / CoFe）m / CoB（其中m为≥1）的复合物。 此处描述的自由层提供高于60％的高TMR比，同时实现λ（<5×10-6），RA（1.5欧姆/μm2）和Hc（<6Oe）的低值。

公开(公告)号：US07672088B2

公开(公告)日：2010-03-02

申请号：US11472126

申请日：2006-06-21

申请人： Kunliang Zhang ,  Min Li ,  Yu-Hsia Chen ,  Hui-Chuan Wang ,  Tong Zhao

发明人： Kunliang Zhang ,  Min Li ,  Yu-Hsia Chen ,  Hui-Chuan Wang ,  Tong Zhao

IPC分类号： G11B5/39

CPC分类号： G11B5/3983 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/16 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/183 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： A spin valve structure is disclosed in which an AP1 layer and/or free layer are made of a laminated Heusler alloy having Al or FeCo insertion layers. The ordering temperature of a Heusler alloy such as Co2MnSi is thereby lowered from about 350° C. to 280° C. which becomes practical for spintronics device applications. The insertion layer is 0.5 to 5 Angstroms thick and may also be Sn, Ge, Ga, Sb, or Cr. The AP1 layer or free layer can contain one or two additional FeCo layers to give a configuration represented by FeCo/[HA/IL]nHA, [HA/IL]nHA/FeCo, or FeCo/[HA/IL]nHA/FeCo where n is an integer ≧1, HA is a Heusler alloy layer, and IL is an insertion layer. Optionally, a Heusler alloy insertion scheme is possible by doping Al or FeCo in the HA layer. For example, Co2MnSi may be co-sputtered with an Al or FeCo target or with a Co2MnAl or Co2FeSi target.

摘要翻译： 公开了一种自旋阀结构，其中AP1层和/或自由层由具有Al或FeCo插入层的层状Heusler合金制成。 因此，Heusler合金（例如Co 2 MnSi）的排序温度从约350℃降低到280℃，这对于自旋电子器件应用是实用的。 插入层的厚度为0.5〜5埃，也可以是Sn，Ge，Ga，Sb或Cr。 AP1层或自由层可以含有一个或两个另外的FeCo层，以得到由FeCo / [HA / IL] nHA，[HA / IL] nHA / FeCo或FeCo / [HA / IL] nHA / FeCo表示的构型，其中 n是整数≥1，HA是Heusler合金层，IL是插入层。 任选地，通过在HA层中掺杂Al或FeCo，Heusler合金插入方案是可能的。 例如，Co2MnSi可以与Al或FeCo靶或Co2MnAl或Co2FeSi靶共溅射。

公开(公告)号：US20100037453A1

公开(公告)日：2010-02-18

申请号：US12589207

申请日：2009-10-20

申请人： Kunliang Zhang ,  Daniel Gabels ,  Min Li ,  Yu-Hsia Chen

发明人： Kunliang Zhang ,  Daniel Gabels ,  Min Li ,  Yu-Hsia Chen

IPC分类号： G11B5/127

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  H01L43/08 ,  H01L43/12 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： Concerns about inadequate electromigration robustness in CCP CPP GMR devices have been overcome by adding magnesium to the current confining structures that are presently in use. In one embodiment the alumina layer, in which the current carrying copper regions are embedded, is fully replaced by a magnesia layer. In other embodiments, alumina is still used but a layer of magnesium is included within the structure before it is subjected to ion assisted oxidation.

摘要翻译： 通过向当前使用的当前限制结构添加镁，克服了对CCP CPP GMR器件的电迁移鲁棒性不足的担忧。 在一个实施例中，其中载流电铜区域的氧化铝层被氧化镁层完全替代。 在其它实施方案中，仍然使用氧化铝，但在进行离子辅助氧化之前，该结构中包含一层镁。

公开(公告)号：US20090257151A1

公开(公告)日：2009-10-15

申请号：US12456621

申请日：2009-06-19

申请人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou ,  Soichi Oikawa ,  Kenichiro Yamada ,  Katsuhiko Koui

发明人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou ,  Soichi Oikawa ,  Kenichiro Yamada ,  Katsuhiko Koui

IPC分类号： G11B5/33 ,  B05D5/00 ,  C23C14/35

CPC分类号： G01R33/098 ,  G01R33/1284 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T428/1107 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1129 ,  Y10T428/1136 ,  Y10T428/1143

摘要： A spin valve structure for a spintronic device is disclosed and includes a composite seed layer made of at least Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (Co/Ni)x multilayer. The (Co/Ni)x multilayer is deposited by a low power and high Ar pressure process to avoid damaging Co/Ni interfaces and thereby preserving PMA. As a result, only a thin seed layer is required. PMA is maintained even after annealing at 220° C. for 10 hours. Examples of GMR and TMR spin valves are described and may be incorporated in spin transfer oscillators and spin transfer MRAMs. The free layer is preferably made of a FeCo alloy including at least one of Al, Ge, Si, Ga, B, C, Se, Sn, or a Heusler alloy, or a half Heusler alloy to provide high spin polarization and a low magnetic damping coefficient.

摘要翻译： 公开了一种用于自旋电子器件的自旋阀结构，并且包括至少由Ta制成的复合种子层和具有fcc（111）或hcp（001）织构的金属层，以增强覆盖层（Co）中的垂直磁各向异性（PMA） / Ni）x多层。 （Co / Ni）x多层通过低功率和高Ar压力工艺沉积，以避免损坏Co / Ni界面，从而保留PMA。 结果，仅需要薄的种子层。 即使在220℃退火10小时后也保持PMA。 描述了GMR和TMR自旋阀的实例，并且可以结合在自旋转移振荡器和自旋转移MRAM中。 自由层优选由包括Al，Ge，Si，Ga，B，C，Se，Sn或Heusler合金或Heusler合金中的至少一种的FeCo合金制成，以提供高自旋极化和低磁性 阻尼系数。

公开(公告)号：US20090161266A1

公开(公告)日：2009-06-25

申请号：US12321901

申请日：2009-01-27

申请人： Hui-Chuan Wang ,  Tong Zhao ,  Min Li ,  Kunliang Zhang

发明人： Hui-Chuan Wang ,  Tong Zhao ,  Min Li ,  Kunliang Zhang

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： H01L43/08 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3204 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3281 ,  H01F10/3295 ,  H01F41/303 ,  H01L43/12 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49041 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T29/49067

摘要： A high performance TMR element is fabricated by inserting an oxygen surfactant layer (OSL) between a pinned layer and AlOx tunnel barrier layer in a bottom spin valve configuration. The pinned layer preferably has a SyAP configuration with an outer pinned layer, a Ru coupling layer, and an inner pinned layer comprised of CoFeXBY/CoFeZ wherein x=0 to 70 atomic %, y=0 to 30 atomic %, and z=0 to 100 atomic %. The OSL is formed by treating the CoFeZ layer with oxygen plasma. The AlOx tunnel barrier has improved uniformity of about 2% across a 6 inch wafer and can be formed from an Al layer as thin as 5 Angstroms. As a result, the Hin value can be decreased by ⅓ to about 32 Oe. A dR/R of 25% and a RA of 3 ohm-cm2 have been achieved for TMR read head applications.

摘要翻译： 通过在底部自旋阀配置中的钉扎层和AlOx隧道势垒层之间插入氧表面活性剂层（OSL）来制造高性能TMR元件。 钉扎层优选具有带外部被钉扎层，Ru耦合层和由CoFeXBY / CoFeZ组成的内部钉扎层的SyAP构型，其中x = 0至70原子％，y = 0至30原子％，z = 0 至100原子％。 OSL通过用氧等离子体处理CoFeZ层而形成。 AlOx隧道势垒在6英寸晶片上提高了约2％的均匀性，并且可以由薄至5埃的Al层形成。 结果，Hin值可以减少1/3至约32Oe。 对于TMR读头应用，已经实现了25％的dR / R和3ohm-cm 2的RA。

公开(公告)号：US20090122450A1

公开(公告)日：2009-05-14

申请号：US11983329

申请日：2007-11-08

申请人： Hui-Chuan Wang ,  Tong Zhao ,  Min Li ,  Kunliang Zhang

发明人： Hui-Chuan Wang ,  Tong Zhao ,  Min Li ,  Kunliang Zhang

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/18 ,  G11B5/3906 ,  G11B5/3912 ,  G11B2005/3996 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/1114

摘要： A high performance TMR sensor is fabricated by employing a free layer comprised of CoBX with a λ between −5×10−6 and 0 on a MgOX tunnel barrier. Optionally, a FeCo/CoBX free layer configuration may be used where x is about 1 to 30 atomic %. Trilayer configurations represented by FeCo/CoFeB/CoBX, FeCo/CoBX/CoFeB, FeCoY/CoFeW/CoBX, or FeCoY/FeB/CoBX may also be employed. Alternatively, CoNiFeB or CoNiFeBM formed by co-sputtering CoB with CoNiFe or CoNiFeM, respectively, where M is V, Ti, Zr, Nb, Hf, Ta, or Mo may be substituted for CoBx in the aforementioned embodiments. A 15 to 30% in improvement in TMR ratio over a conventional CoFe/NiFe free layer is achieved while maintaining a low Hc and RA

摘要翻译： 通过在MgOX隧道屏障上采用包含-5×10-6和0之间的λ的CoBX自由层来制造高性能TMR传感器。 可选地，可以使用Fe约为1〜30原子％的FeCo / CoBX自由层构型。 还可以使用由FeCo / CoFeB / CoBX，FeCo / CoBX / CoFeB，FeCoY / CoFeW / CoBX或FeCoY / FeB / CoBX表示的三层结构。 或者，在上述实施方式中，可以将CoB与分别与CoNiFe或CoNiFeM（其中M为V，Ti，Zr，Nb，Hf，Ta或Mo）共溅射而形成的CoNiFeB或CoNiFeBM代替CoBx。 在保持低Hc和RA <3欧姆 - um2的同时，实现了常规CoFe / NiFe自由层的TMR比提高15至30％。 在双层或三层实施例中，通过组合CoBx（-1）和具有正λ的一个或多个层来实现-5×10 -6和5×10 -6之间的λ。

公开(公告)号：US20090059441A1

公开(公告)日：2009-03-05

申请号：US11895719

申请日：2007-08-27

申请人： Kunliang Zhang ,  Min Li ,  Yue Liu

发明人： Kunliang Zhang ,  Min Li ,  Yue Liu

IPC分类号： G11B5/33 ,  B05D5/12

CPC分类号： G11B5/39 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3909 ,  G11B2005/3996 ,  Y10T29/49021

摘要： Plasma nitridation, in place of plasma oxidation, is used for the formation of a CCP layer. Al, Mg, Hf, etc. all form insulating nitrides under these conditions. Maintaining the structure at a temperature of at least 150° C. during plasma nitridation and/or performing post annealing at a temperature of 220° C. or higher, ensures that no copper nitride can form. Additionally, unintended oxidation by molecular oxygen of the exposed magnetic layers (mainly the pinned and free layers) is also avoided

摘要翻译： 等离子体氮化代替等离子体氧化，用于形成CCP层。 Al，Mg，Hf等都在这些条件下形成绝缘氮化物。 在等离子体氮化和/或在220℃以上的温度下进行后退火时，将结构维持在至少150℃的温度下，确保不会形成氮化铜。 此外，也避免了暴露的磁性层（主要是固定和自由层）的分子氧的非预期氧化

公开(公告)号：US20080171223A1

公开(公告)日：2008-07-17

申请号：US11652740

申请日：2007-01-12

申请人： Hui-Chuan Wang ,  Kunliang Zhang ,  Tong Zhao ,  Min Li

发明人： Hui-Chuan Wang ,  Kunliang Zhang ,  Tong Zhao ,  Min Li

IPC分类号： B32B15/20 ,  B05D5/12

CPC分类号： H01F10/30 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3295 ,  H01F41/302 ,  H01L43/10 ,  Y10T428/1291

摘要： A MTJ structure is disclosed in which the seed layer is made of a lower Ta layer, a middle Hf layer, and an upper NiFe or NiFeX layer where X is Co, Cr, or Cu. Optionally, Zr, Cr, HfZr, or HfCr may be employed as the middle layer and materials having FCC structures such as CoFe and Cu may be used as the upper layer. As a result, the overlying layers in a TMR sensor will be smoother and less pin dispersion is observed. The Hex/Hc ratio is increased relative to that for a MTJ having a conventional Ta/Ru seed layer configuration. The trilayer seed configuration is especially effective when an IrMn AFM layer is grown thereon and thereby reduces Hin between the overlying pinned layer and free layer. Ni content in the NiFe or NiFeX middle layer is above 30 atomic % and preferably >80 atomic %.

摘要翻译： 公开了一种MTJ结构，其中种子层由下Ta层，中Hf层和上NiFe或NiFeX层制成，其中X是Co，Cr或Cu。 可选地，可以使用Zr，Cr，HfZr或HfCr作为中间层，并且可以使用具有FCC结构的诸如CoFe和Cu的材料作为上层。 结果，TMR传感器中的上覆层将变得更平滑，并且观察到较少的引脚分散。 相对于具有常规Ta / Ru种子层构型的MTJ，Hex / Hc比增加。 当IrMn AFM层在其上生长时，三层种子构型特别有效，从而在覆盖的被钉扎层和自由层之间降低了Hin。 NiFe或NiFeX中间层的Ni含量在30原子％以上，优选为80原子％以上。