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158 条记录 (耗时 0.037 秒)

    Field effect transistor with frequency dependent gate-channel capacitance
    92.
    发明授权
    Field effect transistor with frequency dependent gate-channel capacitance 有权
    具有频率相关栅极 - 沟道电容的场效应晶体管

    公开(公告)号：US08525226B2

    公开(公告)日：2013-09-03

    申请号：US12474553

    申请日：2009-05-29

    申请人： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

    发明人： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

    IPC分类号： H01L29/66 ,  H01L21/02

    CPC分类号： H01L29/802 ,  H01L29/2003 ,  H01L29/432 ,  H01L29/517 ,  H01L29/7787

    摘要： A field effect transistor having a channel, a gate, and a structure for decreasing a gate-to-channel capacitance of the transistor as an operating frequency of the transistor increases. The structure can comprise, for example, a barrier disposed between the gate and the channel, which has a dielectric permittivity and/or a conductivity that varies with an operating frequency of the transistor. In an embodiment, the barrier comprises a layer of conducting material, such as conducting polymer, conducting semiconductor, conducting semi-metal, amorphous silicon, polycrystalline silicon, and/or the like.

    摘要翻译： 具有沟道，栅极和用于降低晶体管的栅极至沟道电容的结构的场效应晶体管作为晶体管的工作频率增加。 该结构可以包括例如设置在栅极和沟道之间的屏障，其具有随着晶体管的工作频率而变化的介电常数和/或电导率。 在一个实施例中，阻挡层包括导电材料层，例如导电聚合物，导电半导体，导电半金属，非晶硅，多晶硅和/或类似物质。

    Device and Circuit with Improved Linearity
    93.
    发明申请
    Device and Circuit with Improved Linearity 有权
    具有改善线性度的器件和电路

    公开(公告)号：US20120139625A1

    公开(公告)日：2012-06-07

    申请号：US13311633

    申请日：2011-12-06

    申请人： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

    发明人： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

    IPC分类号： H03K5/00

    CPC分类号： H03H5/12

    摘要： A solution for compensating intermodulation distortion of a component is provided. A circuit element includes multiple connected components. At least two of the connected components comprise current-voltage characteristics of opposite signs (e.g., sublinear and superlinear current-voltage characteristics) such that the current-voltage characteristics of the circuit element produces a level of intermodulation distortion for the circuit element lower than a level of intermodulation distortion for each of the connected components.

    摘要翻译： 提供了用于补偿组件的互调失真的解决方案。 电路元件包括多个连接的部件。 连接的组件中的至少两个包括具有相反符号的电流 - 电压特性（例如，亚线性和超级线性电流 - 电压特性），使得电路元件的电流 - 电压特性产生电路元件的互调失真水平低于 每个连接组件的互调失真水平。

    Device and method for managing radiation
    94.
    发明授权
    Device and method for managing radiation 有权
    用于管理辐射的装置和方法

    公开(公告)号：US08053271B2

    公开(公告)日：2011-11-08

    申请号：US12628499

    申请日：2009-12-01

    申请人： Michael Shur ,  Remigijus Gaska

    发明人： Michael Shur ,  Remigijus Gaska

    IPC分类号： H01L31/07

    CPC分类号： G02B6/10 ,  H01L27/14649

    摘要： A device and method for managing terahertz and/or microwave radiation are provided. The device can comprise one or more field effect transistors (FETs) that each include at least one channel contact to a central region of the device channel of the FET. The frequency of the radiation managed by the device can be tuned/adjusted by applying a bias voltage to the FET. The radiation can be impinged on the device, and can be detected by measuring a voltage that is induced by the radiation. Further, the device can generate terahertz and/or microwave radiation by, for example, inducing a voltage between two edge contacts on either side of the device channel and applying the voltage to the channel contact.

    摘要翻译： 提供了一种用于管理太赫兹和/或微波辐射的装置和方法。 该器件可以包括一个或多个场效应晶体管（FET），每个场效应晶体管（FET）每个包括至少一个与FET的器件沟道的中心区域的沟道接触。 可以通过向FET施加偏置电压来调整/调整由器件管理的辐射的频率。 辐射可以撞击在器件上，并且可以通过测量由辐射引起的电压来检测。 此外，器件可以通过例如在器件沟道的任一侧上的两个边缘触点之间引起电压并将电压施加到沟道触点来产生太赫兹和/或微波辐射。

    SHAPED CONTACT LAYER FOR LIGHT EMITTING HETEROSTRUCTURE
    95.
    发明申请
    SHAPED CONTACT LAYER FOR LIGHT EMITTING HETEROSTRUCTURE 审中-公开
    形状接触层用于发光结构

    公开(公告)号：US20110163335A1

    公开(公告)日：2011-07-07

    申请号：US13048233

    申请日：2011-03-15

    申请人： Yuriy Bilenko ,  Remigijus Gaska ,  Michael Shur

    发明人： Yuriy Bilenko ,  Remigijus Gaska ,  Michael Shur

    IPC分类号： H01L33/32

    CPC分类号： H01L33/38 ,  H01S5/0425

    摘要： An improved light emitting heterostructure and/or device is provided, which includes a contact layer having a contact shape comprising one of: a clover shape with at least a third order axis of symmetry or an H-shape. The use of these shapes can provide one or more improved operating characteristics for the light emitting devices. The contact shapes can be used, for example, with contact layers on nitride-based devices that emit light having a wavelength in at least one of: the blue spectrum or the deep ultraviolet (UV) spectrum.

    摘要翻译： 提供了一种改进的发光异质结构和/或器件，其包括具有接触形状的接触层，接触形状包括具有至少三阶对称轴或H形的三叶形。 使用这些形状可以为发光器件提供一个或多个改进的操作特性。 接触形状可以例如使用发射具有以下蓝色光谱或深紫外（UV）光谱中的至少一个的波长的光的氮化物基器件上的接触层。

    LOW-RESISTANCE ELECTRODE DESIGN
    96.
    发明申请
    LOW-RESISTANCE ELECTRODE DESIGN 有权
    低电阻电极设计

    公开(公告)号：US20100301471A1

    公开(公告)日：2010-12-02

    申请号：US12791259

    申请日：2010-06-01

    申请人： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

    发明人： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

    IPC分类号： H01L29/40 ,  G06F17/50 ,  H01L21/44

    CPC分类号： G06F17/5068 ,  H01L29/41758

    摘要： A solution for designing a semiconductor device, in which two or more attributes of a pair of electrodes are determined to, for example, minimize resistance between the electrodes, is provided. Each electrode can include a current feeding contact from which multiple fingers extend, which are interdigitated with the fingers of the other electrode in an alternating pattern. The attributes can include a target depth of each finger, a target effective width of each pair of adjacent fingers, and one or more target attributes of the current feeding contacts. Subsequently, the device and/or a circuit including the device can be fabricated.

    摘要翻译： 提供了一种用于设计半导体器件的方案，其中确定一对电极的两个或多个属性以例如使电极之间的电阻最小化。 每个电极可以包括多个指状件延伸的电流馈送触点，其以交替模式与另一个电极的指状物交叉指向。 属性可以包括每个手指的目标深度，每对相邻手指的目标有效宽度以及当前馈送触点的一个或多个目标属性。 随后，可以制造包括该器件的器件和/或电路。

    LIGHT EMITTING SYSTEM WITH DUAL USE LIGHT ELEMENT
    98.
    发明申请
    LIGHT EMITTING SYSTEM WITH DUAL USE LIGHT ELEMENT 有权
    具有双重使用光元件的发光系统

    公开(公告)号：US20100264835A1

    公开(公告)日：2010-10-21

    申请号：US12763674

    申请日：2010-04-20

    申请人： Yuriy Bilenko ,  Remigijus Gaska ,  Michael Shur ,  Alexei Koudymov

    发明人： Yuriy Bilenko ,  Remigijus Gaska ,  Michael Shur ,  Alexei Koudymov

    IPC分类号： H05B37/02 ,  H01J9/00

    CPC分类号： H05B33/0863 ,  H05B33/0866

    摘要： A solution is provided in which one or more of a plurality of light elements is alternately operated as a light emitting element and a light detecting element. For example, a system can operate a light element as a light detecting element while operating at least one other light element as a light emitting element in order to manage operation of the light elements to generate light having a set of desired attributes, evaluating an operating condition of the other light element(s), and/or the like.

    摘要翻译： 提供了一种解决方案，其中多个光元件中的一个或多个交替地作为发光元件和光检测元件操作。 例如，系统可以操作作为光检测元件的光元件，同时操作至少一个其它光元件作为发光元件，以便管理光元件的操作以产生具有一组所需属性的光，评估操作 另一个光元件的状态和/或类似物。