公开(公告)号：US20050073051A1

公开(公告)日：2005-04-07

申请号：US10871282

申请日：2004-06-21

申请人： Naoki Yamamoto ,  Akio Nishida ,  Akira Fujimoto ,  Hiraku Chakihara ,  Hideyuki Matsuoka ,  Toshiyuki Mine

发明人： Naoki Yamamoto ,  Akio Nishida ,  Akira Fujimoto ,  Hiraku Chakihara ,  Hideyuki Matsuoka ,  Toshiyuki Mine

IPC分类号： H01L21/768 ,  H01L21/02 ,  H01L21/28 ,  H01L21/336 ,  H01L21/822 ,  H01L21/8238 ,  H01L21/8242 ,  H01L27/00 ,  H01L27/06 ,  H01L27/08 ,  H01L27/092 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L21/02063 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76886 ,  H01L21/8221 ,  H01L27/0688 ,  H01L2924/0002 ,  H01L2924/00

摘要： A manufacturing process for a semiconductor integrated circuit device which prevents occurrence of reaction between metal wiring and a boron-doped silicon plug over it in heat treatment for a MOS transistor to be formed over them and reduces the possibility of rise in contact resistance. Metal boride is formed on an exposed metal surface in the bottom of an opening made in an interlayer insulating film over the metal wiring. In order to facilitate formation of such metal boride, metal oxide remaining on the metal surface is removed with an aqueous ammonia solution. The meal surface is irradiated with high energy ultraviolet light in order to remove organic matter remaining in the opening and facilitate removal of the metal oxide with the aqueous ammonia solution.

摘要翻译： 一种用于半导体集成电路器件的制造方法，其防止金属布线和硼掺杂硅插塞之间在其上形成的MOS晶体管的热处理中发生反应，并降低接触电阻上升的可能性。 金属硼化物形成在金属布线上的位于层间绝缘膜的开口底部的露出的金属表面上。 为了促进这种金属硼化物的形成，用氨水溶液除去残留在金属表面上的金属氧化物。 用高能量紫外线照射餐面，以除去残留在开口中的有机物质，并利用氨水溶液去除金属氧化物。

公开(公告)号：US20050003569A1

公开(公告)日：2005-01-06

申请号：US10901151

申请日：2004-07-29

申请人： Shunichi Seki ,  Hideyuki Kimura ,  Naoki Yamamoto

发明人： Shunichi Seki ,  Hideyuki Kimura ,  Naoki Yamamoto

IPC分类号： H05B33/10 ,  B65B1/04 ,  G09F9/00 ,  G09F9/30 ,  H01L27/32 ,  H01L51/00 ,  H01L51/30 ,  H01L51/40 ,  H01L51/50 ,  H01L51/56 ,  H05B33/12 ,  H05B33/14 ,  H05B33/22 ,  H01L21/00

CPC分类号： H05B33/14 ,  B41J25/003 ,  B41J2002/14395 ,  H01L27/3218 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3295 ,  H01L51/0004 ,  H01L51/0005 ,  H01L51/0036 ,  H01L51/0039 ,  H01L51/0043 ,  H01L51/0053 ,  H01L51/0059 ,  H01L51/56 ,  H05B33/10 ,  H05B33/12

摘要： A bank section (112a, 112b) are formed between a plurality of electrodes (111) which are formed on the base body (2). A functional layer is formed on each electrode (111) by injecting a composition from a plurality of nozzles. A display device is manufactured which is provided bank sections (112a, 112b) between the functional layers formed on the electrode (111). A nozzle array in which a plurality of nozzles are disposed to be inclined in a main scanning direction scans on the base body (2). A liquid drop (110c1) of the composition which is injected initially for each functional layer is injected so as to contact at least a part of the bank sections (112a, 112b). According to manufacturing method for a display device in the present invention, it is possible to realize a display device having superior display quality without causing non-uniform functional layer for each pixel electrode.

摘要翻译： 在形成在基体（2）上的多个电极（111）之间形成堤部（112a，112b）。 通过从多个喷嘴注入组合物，在每个电极（111）上形成功能层。 制造在形成在电极（111）上的功能层之间设置的堤部（112a，112b）的显示装置。 其中沿主扫描方向倾斜设置多个喷嘴的喷嘴阵列扫描基体（2）。 注入初始为每个功能层注入的组合物的液滴（110c1），以便与至少一部分的堤部分（112a，112b）接触。 根据本发明的显示装置的制造方法，可以实现具有优异的显示质量的显示装置，而不会对每个像素电极造成不均匀的功能层。

公开(公告)号：US06785281B1

公开(公告)日：2004-08-31

申请号：US09322608

申请日：1999-05-28

申请人： Hideyasu Kanemaki ,  Hideki Inoue ,  Masaru Murakami ,  Ikuo Taoka ,  Naoki Yamamoto

发明人： Hideyasu Kanemaki ,  Hideki Inoue ,  Masaru Murakami ,  Ikuo Taoka ,  Naoki Yamamoto

IPC分类号： H04L1256

CPC分类号： H04L45/10 ,  H04L12/5601 ,  H04L45/306 ,  H04L2012/562 ,  H04L2012/5629

摘要： A method of transferring data in a connection-type network in which nodes are connected via communication lines and terminals are connected to the nodes includes the steps of sending a request from a first one of the terminals to a second one of the terminals via a connection established on a first communication line, the request requesting transfer of data from the second one of the terminals to the first one of the terminals via a second communication line, establishing a connection on the second communication line between a first one of the nodes having the first one of the terminals attached thereto and a second one of the nodes having the second one of the terminals attached thereto, and transferring all or part of the data via the connection on the second communication line, wherein the second communication line is established to be in existence for a predetermined duration of time or for a time period during which all or part of the data is transferred.

摘要翻译： 在节点经由通信线路和终端连接的连接型网络中传送数据的方法连接到节点包括以下步骤：经由连接将终端中的第一个终端发送请求到终端中的第二个终端 在第一通信线路上建立请求，请求经由第二通信线路将数据从第二终端传送到终端中的第一终端，在具有第二通信线路的第一节点之间的第二通信线路上建立连接 连接到其中的终端中的第一个和附属于其中的第二个终端的节点中的第二个，并且经由第二通信线路上的连接传送全部或部分数据，其中第二通信线路被建立为 存在预定的持续时间或传输全部或部分数据的时间段。

公开(公告)号：US06784038B2

公开(公告)日：2004-08-31

申请号：US09929091

申请日：2001-08-15

申请人： Yoshikazu Tanabe ,  Naoki Yamamoto ,  Shinichiro Mitani ,  Yuko Hanaoka

发明人： Yoshikazu Tanabe ,  Naoki Yamamoto ,  Shinichiro Mitani ,  Yuko Hanaoka

IPC分类号： H01L218238

CPC分类号： H01L21/28247 ,  H01L21/28044 ,  H01L21/28061 ,  H01L21/32105 ,  H01L21/67098 ,  H01L21/67115 ,  H01L21/823842 ,  H01L21/823857 ,  H01L27/1214 ,  H01L29/4941 ,  H01L29/4983

摘要： In order to provide a light oxidation process technique for use in a CMOS LSI employing a polymetal gate structure and a dual gate structure, so that both oxidation of a refractory metal film constituting a part of a gate electrode and diffusion of boron contained in a p-type polycrystalline silicon film constituting a part of the gate electrode can be prevented, a mixed gas containing a hydrogen gas and steam synthesized from an oxygen gas and a hydrogen gas is supplied to a major surface of a semiconductor wafer A1, and a heat treatment for improving a profile of a gate insulating film that has been cut by etching under an edge part of the gate electrode is conducted under a low thermal load condition in that the refractor metal film is substantially not oxidized, and boron contained in a p-type polycrystalline silicon film constituting a part of the gate electrode is not diffused to the semiconductor substrate through the gate oxide film.

摘要翻译： 为了提供一种在采用多金属栅极结构和双栅极结构的CMOS LSI中使用的轻氧化工艺技术，使得构成栅电极的一部分的难熔金属膜的氧化和包含在p中的硼的扩散 可以防止构成栅电极的一部分的多晶硅膜，将含有氢气和从氧气和氢气合成的蒸汽的混合气体供给到半导体晶片A1的主表面，并进行热处理 为了提高在栅电极的边缘部分被蚀刻而切割的栅极绝缘膜的轮廓，在低热负荷条件下进行，因为折射金属膜基本上不被氧化，并且包含在p型 构成栅电极的一部分的多晶硅膜不会通过栅极氧化膜扩散到半导体衬底。

公开(公告)号：US06535392B2

公开(公告)日：2003-03-18

申请号：US09925373

申请日：2001-08-10

申请人： Naoki Yamamoto ,  Makoto Taniguchi ,  Hitoshi Irie

发明人： Naoki Yamamoto ,  Makoto Taniguchi ,  Hitoshi Irie

IPC分类号： H05K702

CPC分类号： H02P9/02 ,  H02K5/225 ,  H02K19/36 ,  H02K19/365 ,  H02P9/305

摘要： In a regulator (voltage control apparatus), an IC chip is adhered to the surface of a first metal plate. A lead wire connects the IC chip with an outside connecting terminal. A second metal plate formed to cover the IC chip is formed integrally with a negative side wiring for supplying a battery voltage into the IC chip.

公开(公告)号：US06485403B2

公开(公告)日：2002-11-26

申请号：US09761096

申请日：2001-01-16

申请人： Yoshifumi Kamano ,  Kazuyoshi Nishijima ,  Kazuhiro Kaneko ,  Naoki Yamamoto ,  Naoki Horikawa ,  Kumiko Mochizuki ,  Yoshitaka Mochizuki ,  Harumi Mochizuki ,  Naoko Mochizuki

发明人： Yoshifumi Kamano ,  Kazuyoshi Nishijima ,  Kazuhiro Kaneko ,  Naoki Yamamoto ,  Naoki Horikawa ,  Kumiko Mochizuki ,  Yoshitaka Mochizuki ,  Harumi Mochizuki ,  Naoko Mochizuki

IPC分类号： B31B152

CPC分类号： B60R21/237 ,  B60R21/217 ,  B60R2021/2375

摘要： A pouch-shaped air bag (12) is spread out in a circle. Then, the portion of the air bag (12) located outside the inflator (16) is folded into a wave-like pattern from four directions so that four side portions (61) are formed along the inflator (16). Next, each one of the four excess portions (62), which are continuously formed between each two adjacent side portions (61) and protrude outward, is placed along the outer face of each side portion (61). Thus, the air bag (12) can be easily folded compactly that can be smoothly unfolded.

摘要翻译： 袋形气囊（12）以圆形展开。 然后，位于充气机（16）外侧的气囊（12）的部分从四个方向折叠成波形图案，使得沿着充气机（16）形成四个侧部（61）。 接下来，沿着每个侧部（61）的外表面放置连续形成在两个相邻侧部（61）之间并向外突出的四个多余部分（62）中的每一个。 因此，安全气囊（12）可以容易地折叠，可以平滑地展开。

公开(公告)号：US06376203B1

公开(公告)日：2002-04-23

申请号：US09349824

申请日：1999-07-08

申请人： Kazuhiro Matsuda ,  Naoki Yamamoto

发明人： Kazuhiro Matsuda ,  Naoki Yamamoto

IPC分类号： G01N33554

CPC分类号： C07H15/06 ,  C07H15/10 ,  C07K16/1253 ,  C12P19/44 ,  G01N33/56933

摘要： Mouse is immunized with an antigen of a lipid fraction originating from Mycoplasma fermentans. Its spleen cells are fused with mouse myeloma cells to prepare hybridomas. A hybridoma is selected, which produces a monoclonal antibody having reaction specificity to GGPL-III that is a phosphocholine-containing glycoglycerolipid specific to Mycoplasma fermentans. Mycoplasma fermentans is detected by using the obtained antibody.

摘要翻译： 用来自发酵支原体的脂质部分的抗原免疫小鼠。 其脾细胞与小鼠骨髓瘤细胞融合以制备杂交瘤。 选择杂交瘤，其产生对GGPL-III具有反应特异性的单克隆抗体，GGPL-III是对发酵支原体特异性的含磷酸胆碱的甘油糖脂。 通过使用获得的抗体检测发酵支原体。

公开(公告)号：US06323115B1

公开(公告)日：2001-11-27

申请号：US09314956

申请日：1999-05-20

申请人： Yoshikazu Tanabe ,  Naoki Yamamoto ,  Shinichiro Mitani ,  Yuko Hanaoka

发明人： Yoshikazu Tanabe ,  Naoki Yamamoto ,  Shinichiro Mitani ,  Yuko Hanaoka

IPC分类号： H01L213205

CPC分类号： H01L21/28247 ,  H01L21/28044 ,  H01L21/28061 ,  H01L21/32105 ,  H01L21/67098 ,  H01L21/67115 ,  H01L21/823842 ,  H01L21/823857 ,  H01L27/1214 ,  H01L29/4941 ,  H01L29/4983

摘要： In order to provide a light oxidation process technique for use in a CMOS LSI employing a polymetal gate structure and a dual gate structure, so that both oxidation of a refractory metal film constituting a part of a gate electrode and diffusion of boron contained in a p-type polycrystalline silicon film constituting a part of the gate electrode can be prevented, a mixed gas containing a hydrogen gas and steam synthesized from an oxygen gas and a hydrogen gas is supplied to a major surface of a semiconductor wafer A1, and a heat treatment for improving a profile of a gate insulating film that has been cut by etching under an edge part of the gate electrode is conducted under a low thermal load condition in that the refractory metal film is substantially not oxidized, and boron contained in a p-type polycrystalline silicon film constituting a part of the gate electrode is not diffused to the semiconductor substrate through the gate oxide film.

摘要翻译： 为了提供一种在采用多金属栅极结构和双栅极结构的CMOS LSI中使用的轻氧化工艺技术，使得构成栅电极的一部分的难熔金属膜的氧化和包含在p中的硼的扩散 可以防止构成栅电极的一部分的多晶硅膜，将含有氢气和从氧气和氢气合成的蒸汽的混合气体供给到半导体晶片A1的主表面，并进行热处理 为了提高在栅电极的边缘部分刻蚀的栅极绝缘膜的轮廓，在低热负荷条件下进行，因为难熔金属膜基本上不被氧化，并且含有p型 构成栅电极的一部分的多晶硅膜不会通过栅极氧化膜扩散到半导体衬底。

公开(公告)号：US6157406A

公开(公告)日：2000-12-05

申请号：US184011

申请日：1998-11-02

申请人： Noriyuki Iura ,  Tomoyuki Kurashige ,  Naoki Yamamoto ,  Takuya Imaide ,  Hiroaki Kami ,  Yoshihiro Todaka

发明人： Noriyuki Iura ,  Tomoyuki Kurashige ,  Naoki Yamamoto ,  Takuya Imaide ,  Hiroaki Kami ,  Yoshihiro Todaka

IPC分类号： H04N5/235 ,  H04N5/225

CPC分类号： H04N5/2357 ,  H04N5/2352

摘要： An image pickup apparatus capable of generating a motion picture and a still picture. An amount of exposure in a still imaging mode is increased as compared with the amount of exposure for mode is increased as compared with the amount of exposure for one field in the motion picture imaging mode, preferably twice as large as the latter. In the still picture mode, electric charges are swept out from a CCD by an exposure control simultaneously with closing of a diaphragm for adjusting the amount of exposure. Upon occurrence of error in the closing operation of the diaphragm, the amount of exposure in the still picture mode is set to a design value. On the basis of difference between the design value and an actually measured value of the amount of exposure, gain for video signal is corrected. In the motion picture mode, the diaphragm and the electronic shutter speed is adjusted for preventing flicker from making appearance under illumination of a fluorescent lamp in indoor photographing. The adjusted speed can be 1/100 sec.

摘要翻译： 一种能够产生运动图像和静止图像的图像拾取装置。 与静止成像模式中的曝光量相比，与用于运动图像成像模式中的一个场的曝光量相比，模式的曝光量增加，优选为后者的两倍。 在静止图像模式中，通过曝光控制从CCD扫描电荷，同时关闭用于调节曝光量的光圈。 当在隔膜的关闭操作中发生错误时，将静止图像模式中的曝光量设置为设计值。 基于设计值与曝光量的实际测量值之间的差异，校正视频信号的增益。 在动态影像模式中，调节光阑和电子快门速度，以防止室内照明中荧光灯的照明下出现闪烁。 调整速度可以为+ E，fra 1/100 + EE sec。

公开(公告)号：US6077013A

公开(公告)日：2000-06-20

申请号：US981480

申请日：1998-03-09

申请人： Naoki Yamamoto ,  Hiroyuki Sata ,  Hideki Tamura

发明人： Naoki Yamamoto ,  Hiroyuki Sata ,  Hideki Tamura

IPC分类号： F16B35/04 ,  F16B25/00

CPC分类号： F16B35/047 ,  F16B35/041

摘要： A bolt provided with a pilot of the present invention is formed with a pilot portion, on the front end side of a shank portion, having an axis aligning with an axis of the shank portion. The pilot portion is formed with a guide thread portion continuous to the normal thread portion to about half portion of the pilot portion. The connecting portion between the normal thread portion and the guide thread portion has a connection thread portion having an outer diameter gradually reducing from the normal thread portion toward the front end portion of the pilot portion. According to such structure, workability can be improved.

摘要翻译： PCT No.PCT / JP97 / 01461 Sec。 371日期1998年3月9日 102（e）1998年3月9日PCT 1997年4月25日PCT PCT。 公开号WO97 / 41360 PCT 日本1997年11月6日具有本发明的导向件的螺栓形成有在柄部的前端侧具有与轴柄部的轴线对准的轴线的先导部。 导向部分形成有与正常螺纹部分连续的引导螺纹部分到引导部分的大约一半部分。 正常螺纹部与导丝螺纹部之间的连接部具有从正常螺纹部向导向部的前端部逐渐减小的外径的连接螺纹部。 根据这样的结构，可以提高可加工性。