公开(公告)号：US20120187375A1

公开(公告)日：2012-07-26

申请号：US13013067

申请日：2011-01-25

申请人： Dechao Guo ,  Zhengwen Li ,  Kejia Wang ,  Zhen Zhang ,  Yu Zhu

发明人： Dechao Guo ,  Zhengwen Li ,  Kejia Wang ,  Zhen Zhang ,  Yu Zhu

IPC分类号： H01L29/775 ,  H01L21/335 ,  B82Y99/00

CPC分类号： H01L29/0673 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/84 ,  H01L21/845 ,  H01L27/1203 ,  H01L27/1211 ,  H01L29/42392 ,  H01L29/47 ,  H01L29/6675 ,  H01L29/7839 ,  H01L51/0048 ,  H01L51/0516 ,  H01L51/0558 ,  H01L51/057 ,  Y10S977/762 ,  Y10S977/938

摘要： In one exemplary embodiment, a method includes: providing a semiconductor device having a substrate, a nanowire, a first structure and a second structure, where the nanowire is suspended between the first structure and the second structure, where the first structure and the second structure overly the substrate; and performing atomic layer deposition to deposit a film on at least a portion of the semiconductor device, where performing atomic layer deposition to deposit the film includes performing atomic layer deposition to deposit the film on at least a surface of the nanowire.

摘要翻译： 在一个示例性实施例中，一种方法包括：提供具有衬底，纳米线，第一结构和第二结构的半导体器件，其中纳米线悬挂在第一结构和第二结构之间，其中第一结构和第二结构 过度的底物; 以及进行原子层沉积以在所述半导体器件的至少一部分上沉积膜，其中进行原子层沉积以沉积所述膜包括进行原子层沉积以将所述膜沉积在所述纳米线的至少一个表面上。

公开(公告)号：US08192217B2

公开(公告)日：2012-06-05

申请号：US13069385

申请日：2011-03-23

申请人： Yu Zhu

发明人： Yu Zhu

IPC分类号： H01R13/28

CPC分类号： H01R24/84 ,  H01R12/716 ,  H01R13/112 ,  H01R2107/00

摘要： A battery connector includes an insulative housing and a plurality of terminals retained in the housing. The housing defines a mating surface, a rear surface opposite to the mating surface and a plurality of passageways penetrating through the mating surface and the rear surface along a front-to-back direction. At least one pair of first grooves is formed in opposite inner sidewalls of each passageway and running through the rear surface. A pair of slits communicates and is staggered with the corresponding first grooves along a vertical direction perpendicular to the front-to-back direction. Each terminal includes a retention portion with at least one pair of barbs defined at two sides thereof. The retention portions pass through the first grooves along the front-to-back direction and are pressed along the vertical direction so as to retain the barbs in the corresponding slits.

摘要翻译： 电池连接器包括绝缘壳体和保持在壳体中的多个端子。 壳体限定配合表面，与配合表面相对的后表面和沿着前后方向穿过配合表面和后表面的多个通道。 在每个通道的相对的内侧壁中形成至少一对第一凹槽，并且穿过后表面。 一对狭缝与垂直于前后方向的垂直方向连通并与相应的第一凹槽交错。 每个端子包括保持部分，其具有限定在其两侧的至少一对倒钩。 保持部沿着前后方向穿过第一槽，并且沿着垂直方向被按压以将倒钩保持在相应的狭缝中。

公开(公告)号：US08083550B2

公开(公告)日：2011-12-27

申请号：US12380710

申请日：2009-03-02

申请人： Yu Zhu

发明人： Yu Zhu

IPC分类号： H01R31/00 ,  H01R33/00

CPC分类号： H01R13/447 ,  H01R12/716 ,  H01R12/724 ,  H01R27/02

摘要： An electrical connector assembly includes a male connector and a female connector. The male connector includes a body having a male mating face, a first abutment face and a first mounting face and a number of first contacts each of which has a first male engaging section, a first median portion, and the first tail portion. A female connector includes a body having a female mating face, a second abutment face, and a second mounting face and a number of second contacts each of which has a first female engaging section, and a second male engaging section. A protective cover disposed on a top region between the female connector and the male connector has a projection, which abuts against the first median section of at least one of the first contact.

摘要翻译： 电连接器组件包括阳连接器和阴连接器。 公连接器包括具有阳配合面的主体，第一邻接面和第一安装面以及多个第一接触件，每个第一接触件具有第一阳接合部分，第一中间部分和第一尾部部分。 阴连接器包括具有阴配合面的主体，第二抵接面和第二安装面以及多个第二触点，每个具有第一阴接合部和第二阳接合部。 设置在阴连接器和阳连接器之间的顶部区域上的保护盖具有与第一接触件中的至少一个的第一中间部分抵接的突起。

公开(公告)号：US08033869B1

公开(公告)日：2011-10-11

申请号：US12960582

申请日：2010-12-06

申请人： Yu Zhu ,  Sheng-Ho Yang

发明人： Yu Zhu ,  Sheng-Ho Yang

IPC分类号： H01R24/00

CPC分类号： H01R31/06

摘要： An electrical adaptor includes a first connector body loaded with first terminals and a second connector body loaded with second terminals. The two connector bodies assembly attaches with each other and each defines a mating port opposite to each other. At least partial of the first terminals each includes a contacting strip in the mating port of the first connector body and a touching portion. Each second terminal includes a contacting portion in the mating port of the second connector body and a touching portion. Each touching portion of the first terminals contacts with touching portions of two or more said second terminals.

摘要翻译： 电适配器包括装载有第一端子的第一连接器主体和装有第二端子的第二连接器主体。 两个连接器主体组件彼此附接并且各自限定彼此相对的配合端口。 至少部分第一端子各自包括在第一连接器主体的配合端口中的接触条和触摸部分。 每个第二端子包括在第二连接器主体的配合端口中的接触部分和接触部分。 第一端子的每个触摸部分与两个或更多个所述第二端子的触摸部分接触。

公开(公告)号：US20110186914A1

公开(公告)日：2011-08-04

申请号：US12698191

申请日：2010-02-02

申请人： Kangguo Cheng ,  Bruce B. Doris ,  Yu Zhu

发明人： Kangguo Cheng ,  Bruce B. Doris ,  Yu Zhu

IPC分类号： H01L29/78 ,  H01L21/28 ,  H01L21/336

CPC分类号： H01L21/28 ,  H01L29/78

摘要： Disclosed are a field effect transistor structure and a method of forming the structure. A gate stack is formed on the wafer above a designated channel region. Spacer material is deposited and anisotropically etched until just prior to exposing any horizontal surfaces of the wafer or gate stack, thereby leaving relatively thin horizontal portions of spacer material on the wafer surface and relatively thick vertical portions of spacer material on the gate sidewalls. The remaining spacer material is selectively and isotropically etched just until the horizontal portions of spacer material are completely removed, thereby leaving only the vertical portions of the spacer material on the gate sidewalls. This selective isotropic etch removes the horizontal portions of spacer material without damaging the wafer surface. Raised epitaxial source/drain regions can be formed on the undamaged wafer surface adjacent to the gate sidewall spacers in order to tailor source/drain resistance values.

摘要翻译： 公开了场效应晶体管结构和形成该结构的方法。 栅极叠层形成在指定沟道区上方的晶片上。 间隔物材料被沉积并各向异性蚀刻，直到暴露晶片或栅极堆叠的任何水平表面之前，从而在晶片表面上留下相对薄的间隔物材料的水平部分和栅极侧壁上的间隔物材料的相对较厚的垂直部分。 剩余的间隔物料被选择性地和各向同性地蚀刻，直到间隔物材料的水平部分被完全去除，从而仅留下间隔材料在浇口侧壁上的垂直部分。 该选择性各向同性蚀刻除去间隔材料的水平部分而不损坏晶片表面。 可以在与栅极侧壁间隔物相邻的未损坏的晶片表面上形成凸出的外延源极/漏极区域，以便定制源极/漏极电阻值。

公开(公告)号：US20100208227A1

公开(公告)日：2010-08-19

申请号：US12669671

申请日：2008-03-14

申请人： Yu Zhu ,  Ming Zhang ,  Jinsong Wang ,  Guang Li ,  Dengfeng Xu ,  Wensheng Yin ,  Guanghong Duan ,  Kaiming Yang

发明人： Yu Zhu ,  Ming Zhang ,  Jinsong Wang ,  Guang Li ,  Dengfeng Xu ,  Wensheng Yin ,  Guanghong Duan ,  Kaiming Yang

IPC分类号： G03B27/58

CPC分类号： G03F7/70725 ,  G03F7/70733

摘要： A dual-stage switching system for lithographic machine includes a wafer stage to be operated in an exposure station and another wafer stage to be operated in a pre-processing station. The two wafer stages are provided on a base, with four 2-DOF driving units capable of moving along X direction and Y direction being provided along the edge of the base, and the wafer stages being disposed in a space surrounded by the four 2-DOF driving units and suspended on an upper surface of the base by air bearings. Each of the 2-DOF driving units includes upper and lower linear guides and a guiding sleeve, with the upper and lower linear guides being installed vertical to each other in their corresponding guiding sleeve. Two adjacent 2-DOF driving units cooperatively drive the wafer stage) to move in the X direction and Y direction.

摘要翻译： 用于光刻机的双级切换系统包括在曝光站中操作的晶片台和在预处理站中操作的另一晶片台。 两个晶片台设置在基座上，四个2-DOF驱动单元能够沿着X方向移动，Y方向沿着基座的边缘设置，并且晶片台被布置在由四个2- DOF驱动单元，并通过空气轴承悬挂在基座的上表面上。 每个2自由度驱动单元包括上和下线性引导件和引导套筒，其中上和下线性引导件在其相应的导向套筒中彼此垂直地安装。 两个相邻的2-DOF驱动单元协同驱动晶片台）沿X方向和Y方向移动。

公开(公告)号：US20090268507A1

公开(公告)日：2009-10-29

申请号：US12111258

申请日：2008-04-29

申请人： Matthew J. Breitwisch ,  Chung H. Lam ,  Hsiang-Lan Lung ,  Bipin Rajendran ,  Alejandro G. Schrott ,  Yu Zhu

发明人： Matthew J. Breitwisch ,  Chung H. Lam ,  Hsiang-Lan Lung ,  Bipin Rajendran ,  Alejandro G. Schrott ,  Yu Zhu

IPC分类号： G11C11/00 ,  H01S4/00

CPC分类号： H01L45/144 ,  G11C13/0004 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  Y10T29/49002

摘要： A phase change memory control ring lower electrode is disclosed. The lower electrode includes an outer ring electrode in thermal contact with a phase change memory element, an inner seed layer disposed within the outer ring electrode and in contact with the phase change memory element, and an electrically conductive bottom layer coupled to the outer ring electrode.

摘要翻译： 公开了一种相变存储器控制环下电极。 下电极包括与相变存储元件热接触的外环电极，设置在外环电极内并与相变存储元件接触的内种子层，以及耦合到外环电极的导电底层 。

公开(公告)号：US20090023346A1

公开(公告)日：2009-01-22

申请号：US12220196

申请日：2008-07-21

申请人： Yu Zhu

发明人： Yu Zhu

IPC分类号： H01R13/42

CPC分类号： H01R13/2442 ,  H01R13/41

摘要： An electrical connector (1) comprises a dielectric housing (2) and a plurality of conductive contacts (3). The dielectric housing (2) comprises a plurality of contact passages (20) having retaining means (206) therein. Each conductive contact (3) comprises a retaining portion (30) engaging corresponding the contact passage (20) and a resiliently depressible contacting portion (34). When inserting, the conductive contact (3) is respectively inserted in the contact passages (20) along an inserting direction while the retaining portion (30) along a first path, the contacting portion (34) along a second path, but the retaining means (206) is not on the first path and second path and engages the inserted conductive contact (2).

摘要翻译： 电连接器（1）包括绝缘壳体（2）和多个导电触头（3）。 绝缘壳体（2）包括多个在其中具有保持装置（206）的接触通道（20）。 每个导电接触件（3）包括与接触通道（20）接合的保持部分（30）和可弹性按压的接触部分（34）。 当插入时，导电触头（3）沿着插入方向分别插入接触通道（20）中，而保持部分（30）沿着第一路径，接触部分（34）沿着第二路径插入，但保持装置 （206）不在第一路径和第二路径上并且接合插入的导电接触（2）。

公开(公告)号：US20080079513A1

公开(公告)日：2008-04-03

申请号：US11827616

申请日：2007-07-12

申请人： Dima Prikhodko ,  Gene A. Tkachenko ,  Richard A. Carter ,  Sergey Nabokin ,  Jason Chiesa ,  Steven C. Sprinkle ,  Yu Zhu ,  Beverly A. Peluso

发明人： Dima Prikhodko ,  Gene A. Tkachenko ,  Richard A. Carter ,  Sergey Nabokin ,  Jason Chiesa ,  Steven C. Sprinkle ,  Yu Zhu ,  Beverly A. Peluso

IPC分类号： H03H7/01 ,  H03H7/38

CPC分类号： H03H7/0115 ,  H03H7/1758 ,  H03H7/1766 ,  H03H7/1783 ,  H03H7/38 ,  H03H7/465

摘要： According to one exemplary embodiment, a switching module includes a first harmonic phase tuning filter coupled to a first input of an RF switch. The first harmonic phase tuning filter is configured to provide an output impedance that substantially matches an input impedance of the RF switch at approximately a fundamental frequency and to provide a high impedance at approximately a harmonic frequency generated by the RF switch. The first harmonic phase tuning filter includes an LC circuit coupled between input and output terminals of the first harmonic phase tuning filter and tuned to provide the high impedance at approximately the harmonic frequency generated by the RF switch. The RF switching module further includes a second harmonic phase tuning filter coupled to a second input of the RF switch. The first and second harmonic phase tuning filters can be fabricated on a single semiconductor die.

摘要翻译： 根据一个示例性实施例，开关模块包括耦合到RF开关的第一输入的第一谐波相位调谐滤波器。 第一谐波相位调谐滤波器被配置为提供基本匹配RF开关的输入阻抗在大致基频处的输出阻抗并且在由RF开关产生的近似谐波频率处提供高阻抗。 第一谐波相位调谐滤波器包括耦合在第一谐波相位调谐滤波器的输入和输出端之间的LC电路，并被调谐以提供大致由RF开关产生的谐波频率的高阻抗。 RF切换模块还包括耦合到RF开关的第二输入端的二次谐波相位调谐滤波器。 第一和第二谐波相位调谐滤波器可以在单个半导体管芯上制造。

公开(公告)号：US07259380B2

公开(公告)日：2007-08-21

申请号：US11155973

申请日：2005-06-17

申请人： Jinsong Wang ,  Yu Zhu ,  Jianyong Cao ,  Wensheng Yin ,  Guanghong Duan

发明人： Jinsong Wang ,  Yu Zhu ,  Jianyong Cao ,  Wensheng Yin ,  Guanghong Duan

IPC分类号： G21K5/10 ,  G01K5/08 ,  G01F23/00

CPC分类号： H01L21/68764 ,  H01J2237/20207 ,  H01J2237/20228 ,  H01J2237/20278 ,  H01J2237/31701 ,  H01L21/67213 ,  H01L21/68

摘要： This invention discloses a scanning mechanism of an ion implanter. The mechanism is a PR-PRR type parallel mechanism with two subchains and two DOFs, driving the wafer holder to scan when the first subchain and the second subchain are translated in the same direction at the same speed and adjusting the rotational angle of the wafer holder when the first moving link (30) and the second moving link (32) in the first subchain and the second subchain have different translation amounts in the same direction or opposite directions. The driving motor for the scanning mechanism is provided outside the implant chamber. The invention also solves problems like low rigidity and large accumulation errors of existing serial scanning mechanisms and the effect of the electromagnetic field of the motor within the ion implant chamber on the trajectory of the ion beam.

摘要翻译： 本发明公开了一种离子注入机的扫描机构。 该机构是具有两个子链和两个DOF的PR-PRR型并行机构，当第一子链和第二子链以相同的速度在相同方向上平移时驱动晶片保持器进行扫描，并调整晶片保持器的旋转角度 当第一子链和第二子链中的第一移动链路（30）和第二移动链路（32）在相同方向或相反方向上具有不同的平移量时。 用于扫描机构的驱动电机设置在植入室的外侧。 本发明还解决了现有串行扫描机构的低刚性和大的累积误差以及离子注入室内电动机的电磁场对离子束轨迹的影响的问题。