摘要:
A specially shaped laser pulse energy profile characterized by different laser wavelengths at different times of the profile provides reduced, controlled jitter to enable semiconductor device micromachining that achieves high quality processing and a smaller possible spot size.
摘要:
An apparatus and method for temperature-dependent transient blocking employing a transient blocking unit (TBU) that uses at least one depletion mode n-channel device interconnected with at least one depletion mode p-channel device. The interconnection is performed such that a transient alters a bias voltage Vp of the p-channel device and a bias voltage Vn of the n-channel device in concert to effectuate their mutual switch off to block the transient. The apparatus has a temperature control unit that is in communication with the TBU and adjusts at least one of the bias voltages Vp, Vn in response to a sensed temperature Ts, thereby enabling the apparatus to also respond to over-temperature. In some embodiments the p-channel device is replaced with a positive temperature coefficient thermistor (PTC). The temperature control unit can use any suitable circuit element, including, among other a PTC, resistor, negative temperature coefficient element, positive temperature coefficient element, transistor, diode.
摘要翻译:一种采用使用与至少一个耗尽型p沟道器件互连的至少一个耗尽型n沟道器件的瞬态阻塞单元(TBU)的温度依赖性瞬态阻塞的装置和方法。 执行互连,使得瞬态改变p沟道器件的偏置电压V SUB p N和N沟道器件的偏置电压V N n N一致地实现 他们的相互关闭来阻止瞬态。 该装置具有与TBU通信的温度控制单元,并响应于感测到的温度T 1调整至少一个偏置电压V SUB,V SUB, 从而使得设备也能够响应过温。 在一些实施例中,用正温度系数热敏电阻(PTC)代替p沟道器件。 温度控制单元可以使用任何合适的电路元件,包括PTC,电阻器,负温度系数元件,正温度系数元件,晶体管,二极管等。
摘要:
Patterns with feature sizes of less than 50 microns are rapidly formed directly in semiconductors, particularly silicon, GaAs, indium phosphide, or single crystalline sapphire, using ultraviolet laser ablation. These patterns include very high aspect ratio cylindrical through-hole openings for integrated circuit connections; singulation of processed die contained on semiconductor wafers; and microtab cutting to separate microcircuit workpieces from a parent semiconductor wafer. Laser output pulses (32) from a diode-pumped, Q-switched frequency-tripled Nd:YAG, Nd:YVO4, or Nd:YLF is directed to the workpiece (12) with high speed precision using a compound beam positioner. The optical system produces a Gaussian spot size, or top hat beam profile, of about 10 microns. The pulse energy used for high-speed ablative processing of semiconductors using this focused spot size is greater than 200 μJ per pulse at pulse repetition frequencies greater than 5 kHz and preferably above 15 kHz. The laser pulsewidth measured at the full width half-maximum points is preferably less than 80 ns.
摘要:
A sensor assembly for measuring temperature at a target location includes a sensor adapted to detect infrared radiation and produce an electrical output. A focusing lens focuses infrared radiation from the target location onto the sensor while substantially preventing infrared radiation from points outside the target location from being detected by the sensor. In a first embodiment, a sensor assembly for a focusing thermometer includes a sensor and a focusing lens. In a second embodiment, a focusing thermometer for measuring temperature at a target location includes a sensor assembly and electronic circuitry that receives electrical output from the sensor assembly and processes the output into a temperature reading. The sensor assembly includes a focusing lens for focusing infrared radiation from the target location onto the sensor while substantially preventing infrared radiation from points outside the target location from being detected by the sensor.
摘要:
A protection device is enclosed. The device has a first MOSFET (Q 10), a second MOSFET (Q 11) and a third JFET (Q 12) with their conductive paths in series with the JFET (Q 12) being located between the MOSFETS (Q 10, Q 11). The source of the first MOSFET (Q 10) is connected to the gate of the second MOSFET (Q 11) and the source of the second MOSFET (Q 11) is connected to the gate of the first MOSFET (Q 10). The MOSFETS (Q 10, Q 11) and JFET (Q 12) together form a variable resistance circuit block connectable between an input and an output The gate of the JFET (Q 12) being coupled to the input and the output by respective current sources.
摘要:
A laser pulse with a specially tailored temporal power profile, instead of a conventional temporal shape or substantially square shape, severs an IC link. The specially tailored laser pulse preferably has either an overshoot at the beginning of the laser pulse or a spike peak within the duration of the laser pulse. The timing of the spike peak is preferably set ahead of the time when the link is mostly removed. A specially tailored laser pulse power profile allows the use of a wider laser pulse energy range and shorter laser wavelengths, such as the green and UV, to sever the links without appreciable damage to the substrate and passivation structure material located on either side of and underlying the links.
摘要:
In a MEMS device employing a beam supported by transverse arms, potential bowing of the transverse arms caused by fabrication processes, temperature or local self-heating from resistive losses is accommodated by flexible terminations of the transverse arms. Alternatively, this bowing is controlled so as to provide selective biasing to the beam or mechanical advantage in the sensing of beam motion.
摘要:
An electrical machine such as an alternator (10) has a first housing (14) and a second housing (16) with a stator core assembly (18) therein. The stator core assembly has a plurality of windings (44) that are positioned within laminations (46). The windings have a first set of end turns (48), a second set of end turns (50), and winding ends 52. A respective first end cap (54) and a second end cap (56) are placed over respective end turns (48) (50). Potting material (58) is placed between the first end cap (54) and the first set of end turns (48) and the second end cap (56) and the second set of end turns (50). A stud assembly (60) having a stud housing (62) and a plurality of studs (64) is coupled to the first end cap. A bushing (68) is coupled to the studs (64) so that winding ends (52) may be coupled to a flat surface (70) thereof. The bushings (68) are also used to from an electrical connection between the rectifier bridge (36) and the stator core (42).
摘要:
A control system for controlling a reversible HVAC system of a motor vehicle is disclosed. The HVAC system includes an electric compressor for circulating a refrigerant through a heat pump. The speed of the compressor is controlled by a compressor control signal having a variable duty cycle. Inside and outside heat exchangers transfer heat energy between an outside environment and a passenger compartment of the motor vehicle. A refrigerant flow switching device switches the direction of refrigerant flow towards the inside heat exchanger in a heating mode and towards the outside heat exchanger in a cooling mode. A pressure reducing assembly supplies pressure reduced refrigerant to the inside heat exchanger in the cooling mode and to the outside heat exchanger in the heating mode. The pressure reducing assembly includes an electronic expansion valve in which the flow rate is set by an EXV control signal having a variable duty cycle. A controller controls the duty cycle setting of the compressor control signal and the EXV control signal such that a desired quantity of heat is transferred between the outside environment and the passenger compartment.