公开(公告)号：US20050250907A1

公开(公告)日：2005-11-10

申请号：US11089549

申请日：2005-03-25

申请人： Hiromitsu Nakayama ,  Makoto Katsukawa ,  Hirofumi Inoue ,  Takayuki Nagai ,  Keisuke Ohnishi

发明人： Hiromitsu Nakayama ,  Makoto Katsukawa ,  Hirofumi Inoue ,  Takayuki Nagai ,  Keisuke Ohnishi

IPC分类号： B01F17/00 ,  C08F8/00 ,  C08F8/32 ,  C08F8/40 ,  C08F8/44 ,  C08F8/46 ,  C08F8/50 ,  C08F255/02 ,  C08L23/10 ,  C08L51/00 ,  C08L51/06 ,  C09D151/06

CPC分类号： B01F17/005 ,  B01F17/0064 ,  C08F8/32 ,  C08F255/02 ,  C08K3/346 ,  C08L23/10 ,  C08L51/06 ,  C08L2023/42 ,  C09D151/06 ,  C08L2666/24 ,  C08L2666/02

摘要： Conventionally, a maleic acid-modified polypropylene oligomer has been used as a dispersant of clay in resins, and a hydroxy-modified polypropylene containing a hydroxyl group has been known as a resin modifier for improving the coatability of resins. But a dispersant or coatability improver having the clay dispersion effect and coatability improving effect for resins with as small amount of addition without decreasing the resin properties has not been known. The present invention provides a modifier for resins which comprises a dispersant (I) or a coatability improver (II) comprising a modified polyolefin (A) containing a hydrophobic group comprising a polyolefin (a) having a number average molecular weight of 1,500 to 100,000 and 0.2 to 10 double bonds per 1,000 carbons at the molecular terminus and/or within the molecule, and a hydrophilic group containing at least one onium base (b), and a number average molecular weight per (b) being 750 to 50,000, and a filler in combination.

摘要翻译： 通常，已经使用马来酸改性的聚丙烯低聚物作为树脂中粘土的分散剂，并且已知有含有羟基的羟基改性聚丙烯作为改进树脂涂布性的树脂改性剂。 但是，在不降低树脂性能的情况下，对具有少量添加量的树脂具有粘土分散效果和涂布性改善效果的分散剂或涂布性改进剂尚不清楚。 本发明提供一种树脂改性剂，其包含分散剂（I）或包衣改性剂（II），其包含含有数均分子量为1,500至100,000的聚烯烃（a）的疏水基团的改性聚烯烃（A）和 在分子末端和/或分子内，每1000个碳原子数为0.2〜10个双键，以及含有至少一个鎓基（b）的亲水基团，（b）的数均分子量为750〜50,000， 填料组合。

公开(公告)号：US06294599B1

公开(公告)日：2001-09-25

申请号：US09529009

申请日：2000-04-06

申请人： Hirofumi Inoue ,  Kenji Tamura ,  Tsuguo Ebata ,  Masayuki Noguchi

发明人： Hirofumi Inoue ,  Kenji Tamura ,  Tsuguo Ebata ,  Masayuki Noguchi

IPC分类号： C08K334

CPC分类号： C08K5/34922 ,  C08K3/34 ,  C08K7/02 ,  C08L77/00

摘要： The present invention relates to a highly-rigid, flame-resistant polyamide composite material that is applicable to various uses such as in materials for electric and electronic parts, automobile parts, materials for house appliances, mechanical parts, and the like. The polyamide composite material according to the present invention is characterized in comprising (a) polyamide resin; (b) silicate complex comprising a layered silicate and triazine compound; (c) fibrous reinforcement; and (d) flame retarder. The polyamide composite material according to the present invention exhibits a high flame resistance, a superior performance with respect to its mechanical property, thermal property, dimensional stability, and reduced warp.

摘要翻译： 本发明涉及一种适用于各种用途的高刚性耐火聚酰胺复合材料，例如用于电气和电子部件的材料，汽车部件，家用电器材料，机械部件等。 本发明的聚酰胺复合材料的特征在于：（a）聚酰胺树脂; （b）包含层状硅酸盐和三嗪化合物的硅酸盐络合物; （c）纤维增强; 和（d）阻燃剂。 根据本发明的聚酰胺复合材料显示出高阻燃性，相对于其机械性能，热性能，尺寸稳定性和减少翘曲性能优异。

公开(公告)号：US4231022A

公开(公告)日：1980-10-28

申请号：US969841

申请日：1978-12-15

申请人： Hiroshi Kosugi ,  Hirofumi Inoue ,  Hirotoshi Shirasu

发明人： Hiroshi Kosugi ,  Hirofumi Inoue ,  Hirotoshi Shirasu

IPC分类号： H03M1/82 ,  G06Q40/00 ,  G06Q40/02 ,  H03M1/00 ,  H04B14/04 ,  H03K13/02

CPC分类号： H03M1/008 ,  H04B14/048 ,  H03M1/785

摘要： An interpolative PCM decoder converts PCM signals having polarity bits, segment selection bits and uniform quantization bits into an analog signal. The PCM decoder may be used both for .mu.-law and A-law conversion by use of simple circuits and includes an AND gate circuit which produces a logical product between a selection signal for selecting a minimum unit of an analog value of a lower end of a segment and a control signal for change-over between the .mu.-law and the A-law, and a circuit generating the same analog values as the minimum unit of the analog value in accordance with an output of the AND gate circuit.

摘要翻译： 内插PCM解码器将具有极性位，段选择位和均匀量化比特的PCM信号转换为模拟信号。 PCM解码器可以通过使用简单电路同时用于μ律和A律转换，并且包括与门电路，其在用于选择下限的模拟值的最小单位的选择信号之间产生逻辑积 用于在μ-aaw和A-law之间切换的段和控制信号，以及根据与门电路的输出产生与模拟值的最小单位相同的模拟值的电路。

公开(公告)号：US08964447B2

公开(公告)日：2015-02-24

申请号：US13058952

申请日：2009-06-24

申请人： Hiroyuki Nagashima ,  Hirofumi Inoue

发明人： Hiroyuki Nagashima ,  Hirofumi Inoue

IPC分类号： G11C11/00 ,  G11C13/00

CPC分类号： G11C13/003 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0011 ,  G11C13/0023 ,  G11C13/004 ,  G11C13/0069 ,  G11C2213/31 ,  G11C2213/72

摘要： A nonvolatile semiconductor memory device comprises a cell array including a plurality of first lines, a plurality of second lines intersecting the plurality of first lines, and a plurality of memory cells arranged in matrix and connected at intersections of the first and second lines between both lines, each memory cell containing a serial circuit of an electrically erasable programmable variable resistive element of which resistance is nonvolatilely stored as data and a non-ohmic element; and a plurality of access circuits operative to simultaneously access the memory cells physically separated from each other in the cell array.

摘要翻译： 一种非易失性半导体存储器件，包括一个单元阵列，该单元阵列包括多个第一线，与该多条第一线相交的多个第二线，以及多个存储单元，被布置成矩阵并连接在两条线之间的第一和第二线的交点处 每个存储单元包含其中电阻被非易失性地存储为数据的电可擦除可编程可变电阻元件和非欧姆元件的串行电路; 以及多个访问电路，其操作以同时访问在单元阵列中彼此物理分离的存储单元。

公开(公告)号：US08793052B2

公开(公告)日：2014-07-29

申请号：US12678945

申请日：2008-12-01

申请人： Hirofumi Inoue ,  Masanori Horie

发明人： Hirofumi Inoue ,  Masanori Horie

IPC分类号： B60G17/015 ,  B60G17/016 ,  F16F9/00

CPC分类号： B60G17/015 ,  B60G17/0157 ,  B60G17/016 ,  B60G17/0182 ,  B60G17/0185 ,  B60G17/06 ,  B60G2202/24 ,  B60G2300/60 ,  B60G2400/202 ,  B60G2400/252 ,  B60G2400/91 ,  B60G2600/02 ,  B60G2600/08 ,  B60G2600/1872 ,  B60G2600/1882 ,  B60G2800/162 ,  B60G2800/916 ,  F16F9/00

摘要： A change of performance of an electromagnetic suspension unit is detected. When an integral Σ|Vs′−Vs*| of an absolute value of a difference between an actual value Vs* and an estimated value Vs′ of an expansion/contraction velocity of a shock absorber is larger than a performance change threshold value Sth, it is detected that the performance of the electromagnetic suspension unit is changed. Further, when an integral Σ|Vs*| of an absolute value of the actual value Vs* is larger than an integral Σ|Vs′| of an absolute value of the estimated value Vs′ by a predetermined value, performance of the shock absorber is changed such that a damping force of the shock absorber is reduced. Thus, the performance change of the electromagnetic suspension unit is detected based on the expansion/contraction velocity of the shock absorber.

摘要翻译： 检测到电磁悬架单元的性能变化。 当积分＆Sgr | | Vs'-Vs * |时 实际值Vs *与减震器的伸缩速度的估计值Vs'之间的绝对值的绝对值大于性能变化阈值Sth时，检测到电磁悬架单元的性能 改变了 此外，当积分＆Sgr | | Vs * | 的实际值Vs *的绝对值大于积分＆Sgr | | Vs'| 将估计值Vs'的绝对值设定为预定值，改变减震器的性能，使得减震器的阻尼力减小。 因此，基于减震器的伸缩速度来检测电磁悬架单元的性能变化。

公开(公告)号：US08759806B2

公开(公告)日：2014-06-24

申请号：US13182095

申请日：2011-07-13

申请人： Takeshi Yamaguchi ,  Hirofumi Inoue ,  Reika Ichihara ,  Takayuki Tsukamoto ,  Takashi Shigeoka ,  Katsuyuki Sekine ,  Shinya Aoki

发明人： Takeshi Yamaguchi ,  Hirofumi Inoue ,  Reika Ichihara ,  Takayuki Tsukamoto ,  Takashi Shigeoka ,  Katsuyuki Sekine ,  Shinya Aoki

IPC分类号： H01L29/02

CPC分类号： H01L45/146 ,  H01L27/2409 ,  H01L45/08 ,  H01L45/1233

摘要： A semiconductor memory device in an embodiment comprises memory cells, each of the memory cells disposed between a first line and a second line and having a variable resistance element and a switching element connected in series. The variable resistance element includes a variable resistance layer configured to change in resistance value thereof between a low-resistance state and a high-resistance state. The variable resistance layer is configured by a transition metal oxide. A ratio of transition metal and oxygen configuring the transition metal oxide varies between 1:1 and 1:2 along a first direction directed from the first line to the second line.

摘要翻译： 实施例中的半导体存储器件包括存储单元，每个存储单元设置在第一线和第二线之间，并且具有串联连接的可变电阻元件和开关元件。 可变电阻元件包括可变电阻层，其被配置为在低电阻状态和高电阻状态之间改变其电阻值。 可变电阻层由过渡金属氧化物构成。 构成过渡金属氧化物的过渡金属和氧的比例沿着从第一线指向第二线的第一方向在1:1和1:2之间变化。

公开(公告)号：US08648471B2

公开(公告)日：2014-02-11

申请号：US13454625

申请日：2012-04-24

申请人： Hideyuki Tabata ,  Eiji Ito ,  Hirofumi Inoue

发明人： Hideyuki Tabata ,  Eiji Ito ,  Hirofumi Inoue

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L23/40

CPC分类号： H01L27/2481 ,  G11C13/00 ,  G11C13/0009 ,  G11C2213/71 ,  G11C2213/72 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/147 ,  H01L45/1675 ,  H01L2924/0002 ,  H01L2924/00

摘要： A nonvolatile semiconductor memory device comprises a semiconductor substrate; a cell array block formed on the semiconductor substrate and including plural stacked cell array layers each with a plurality of first lines, a plurality of second lines crossing the plurality of first lines, and memory cells connected at intersections of the first and second lines between both lines; and a plurality of via-holes extending in the stacked direction of the cell array layers to individually connect the first or second line in the each cell array layer to the semiconductor substrate. The via-holes are formed continuously through the plural cell array layers, and multiple via-holes having equal lower end positions and upper end positions are connected to the first or second lines in different cell array layers.

摘要翻译： 非易失性半导体存储器件包括半导体衬底; 形成在所述半导体衬底上的单元阵列块，并且包括多个堆叠的单元阵列层，每个堆叠的单元阵列层具有多个第一线，与所述多条第一线交叉的多个第二线，以及在所述第一和第二线的两个交点处连接的存储单元 线条 以及在单元阵列层的堆叠方向上延伸的多个通孔，以将每个单元阵列层中的第一或第二线分别连接到半导体基板。 通孔连续地形成在多个单元阵列层中，并且具有相同的下端位置和上端位置的多个通孔与不同的单元阵列层中的第一或第二线连接。

公开(公告)号：US08544620B2

公开(公告)日：2013-10-01

申请号：US11791320

申请日：2005-11-10

申请人： Hirofumi Inoue ,  Takuhiro Kondo

发明人： Hirofumi Inoue ,  Takuhiro Kondo

IPC分类号： F16F9/24 ,  F16D57/00

CPC分类号： B60G17/021 ,  B60G15/065 ,  B60G17/0157 ,  B60G2202/312 ,  B60G2202/32 ,  B60G2202/42 ,  F16F15/03

摘要： It is an object of the invention to improve utility in a suspension apparatus for a vehicle having an electromagnetic actuator and a hydraulic damper. In the suspension apparatus, a hydraulic damper is disposed between an electromagnetic actuator and a wheel-holding portion, and a cover tube is provided for accommodating a seal provided between a piston rod and a housing of the hydraulic damper. In the suspension apparatus according to the present invention wherein the hydraulic damper is disposed between the wheel-holding portion and the electromagnetic actuator, it is possible to effectively mitigate not only transmission of vibrations to the vehicle body from the wheel via the electromagnetic actuator but also transmission of vibrations to the electromagnetic actuator. Further, owing to the presence of the cover tube, entry of dust and the like into the hydraulic damper through the seal can be effectively prevented.

摘要翻译： 本发明的目的是提高具有电磁致动器和液压阻尼器的车辆的悬挂装置的实用性。 在悬架装置中，液压阻尼器设置在电磁致动器和车轮保持部之间，并且设置有用于容纳设置在液压阻尼器的活塞杆和壳体之间的密封件的盖管。 在根据本发明的悬架装置中，其中液压阻尼器设置在车轮保持部分和电磁致动器之间，不仅可以有效地减轻经由电磁致动器从车轮向车体的振动传递，而且还可以 振动传递到电磁执行机构。 此外，由于盖管的存在，可以有效地防止灰尘等通过密封件进入液压阻尼器。

公开(公告)号：US08420216B2

公开(公告)日：2013-04-16

申请号：US12669416

申请日：2008-07-11

申请人： Tomokazu Umezawa ,  Tetsuo Wada ,  Hirofumi Inoue

发明人： Tomokazu Umezawa ,  Tetsuo Wada ,  Hirofumi Inoue

IPC分类号： B32B27/40 ,  H05K1/02 ,  C08L75/04

CPC分类号： H05K3/285 ,  C08G59/4246 ,  H01L23/293 ,  H01L2924/0002 ,  H05K2203/124 ,  Y10T428/31551 ,  Y10T428/31605 ,  Y10T428/31609 ,  H01L2924/00

摘要： The thermosetting resin composition according to the present invention includes a resin (A) containing two or more carboxyl groups and having a polyurethane structure, a strongly basic nitrogen-containing heterocyclic compound having pKa of 10.0 to 14.0 as a curing accelerator (B) and a curing agent (C). A cured product of the thermosetting resin composition is used as an insulating protective film for printed wiring boards, flexible printed wiring boards, chip-on-films, etc. The thermosetting resin composition of the invention has improved low-temperature curability and instantaneous curability, can realize tack-free property, can simultaneously realize low warpage property and electrical insulation property, does not contaminate a curing oven and the like by outgassing during heating, has a sufficient pot life, can form excellent cured products and insulating protective films, and can form solder resists and insulating protective films at low cost with good productivity.

摘要翻译： 根据本发明的热固性树脂组合物包含含有两个或更多个羧基并具有聚氨酯结构的树脂（A），作为固化促进剂（B）的pKa为10.0〜14.0的强碱性含氮杂环化合物和 固化剂（C）。 热固性树脂组合物的固化物用作印刷线路板，柔性印刷电路板，片上胶片等的绝缘保护膜。本发明的热固性树脂组合物具有改善的低温固化性和瞬时固化性， 可实现无粘性，可同时实现低翘曲性和电绝缘性，加热时除气不会污染固化炉等，具有足够的使用期限，可形成优良的固化产物和绝缘保护膜，并可 以低成本形成阻焊和绝缘保护膜，生产率高。

公开(公告)号：US08254160B2

公开(公告)日：2012-08-28

申请号：US12887043

申请日：2010-09-21

申请人： Kenichi Murooka ,  Hirofumi Inoue

发明人： Kenichi Murooka ,  Hirofumi Inoue

IPC分类号： G11C11/00

CPC分类号： G11C5/063 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0023 ,  G11C13/003 ,  G11C2213/35 ,  G11C2213/71 ,  G11C2213/75 ,  H01L27/2436 ,  H01L27/2454 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147 ,  H01L45/149

摘要： According to one embodiment, a semiconductor memory device includes: word lines; bit lines; an insulating film; an interlayer insulating film; and a resistance varying material. The word lines, the bit lines and the insulating film configure a field-effect transistor at each of the intersections of the word lines and the bit lines. The field-effect transistor has one of the word lines as a control electrode and one of the bit lines as a channel region. The field-effect transistor and the resistance varying material configure a memory cell having the field-effect transistor and the resistance varying material connected in parallel. Each of the bit lines includes a first surface opposing the word lines, and a second surface on an opposite side to the first surface. The resistance varying material is disposed in contact with the second surface and has a portion thereof in contact with the interlayer insulating film.

摘要翻译： 根据一个实施例，半导体存储器件包括：字线; 位线 绝缘膜; 层间绝缘膜; 和电阻变化材料。 字线，位线和绝缘膜在字线和位线的每个交点处构成场效应晶体管。 场效应晶体管具有作为控制电极的字线之一和位线之一作为沟道区。 场效应晶体管和电阻变化材料配置具有并联连接的场效应晶体管和电阻变化材料的存储单元。 每个位线包括与字线相对的第一表面和与第一表面相反的一侧上的第二表面。 电阻变化材料设置成与第二表面接触并且其一部分与层间绝缘膜接触。