公开(公告)号：US20130122666A1

公开(公告)日：2013-05-16

申请号：US13731546

申请日：2012-12-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichiro SAKATA

IPC: H01L29/786

CPC classification number: H01L29/78669 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78678 ,  H01L29/7869 ,  H01L29/78696

Abstract: It is an object to provide a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. In addition, it is another object to manufacture a highly reliable semiconductor device at low cost with high productivity. In a semiconductor device including a thin film transistor, a semiconductor layer of the thin film transistor is formed with an oxide semiconductor layer to which a metal element is added. As the metal element, at least one of metal elements of iron, nickel, cobalt, copper, gold, manganese, molybdenum, tungsten, niobium, and tantalum is used. In addition, the oxide semiconductor layer contains indium, gallium, and zinc.

公开(公告)号：US20130037799A1

公开(公告)日：2013-02-14

申请号：US13632709

申请日：2012-10-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro SAKATA ,  Toshinari SASAKI ,  Miyuki HOSOBA

IPC: H01L33/08

CPC classification number: H01L27/1225 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/127 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78633 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78654 ,  H01L29/7869 ,  H01L29/78696

Abstract: An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced.

公开(公告)号：US20250140572A1

公开(公告)日：2025-05-01

申请号：US19007727

申请日：2025-01-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Miyuki HOSOBA ,  Masayuki SAKAKURA ,  Yoshiaki OIKAWA

IPC: H01L21/477 ,  G02F1/1333 ,  G02F1/1368 ,  H01L21/02 ,  H10D30/67 ,  H10D86/01 ,  H10D86/40 ,  H10D86/60 ,  H10D99/00

Abstract: An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

公开(公告)号：US20240258119A1

公开(公告)日：2024-08-01

申请号：US18436395

申请日：2024-02-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Hiroki OHARA

IPC: H01L21/465 ,  H01L21/02 ,  H01L21/28 ,  H01L21/324 ,  H01L21/477 ,  H01L29/04 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L21/465 ,  H01L21/02565 ,  H01L21/28176 ,  H01L21/324 ,  H01L21/477 ,  H01L29/04 ,  H01L29/045 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78642 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.

公开(公告)号：US20230387276A1

公开(公告)日：2023-11-30

申请号：US18214623

申请日：2023-06-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari SASAKI ,  Junichiro SAKATA ,  Hiroki OHARA ,  Shunpei YAMAZAKI

IPC: H01L29/66 ,  H01L29/786 ,  H01L27/12 ,  H01L29/423 ,  H01L29/24

CPC classification number: H01L29/66969 ,  H01L29/78696 ,  H01L27/1225 ,  H01L29/7869 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78606 ,  H01L29/42356 ,  H01L29/24 ,  H01L29/78618 ,  H01L27/124

Abstract: It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer having a channel formation region, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer and reduce impurities such as moisture. Moreover, the oxide semiconductor layer subjected to the heat treatment is slowly cooled under an oxygen atmosphere.

公开(公告)号：US20230268348A1

公开(公告)日：2023-08-24

申请号：US18113188

申请日：2023-02-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunichi ITO ,  Toshinari SASAKI ,  Miyuki HOSOBA ,  Junichiro SAKATA

IPC: H01L27/12 ,  H01L29/45 ,  H01L29/786 ,  G09G3/20 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L27/1225 ,  H01L29/45 ,  H01L29/78618 ,  H01L29/7869 ,  H01L27/1248 ,  G09G3/20 ,  H01L29/78693 ,  H01L27/1259 ,  H01L29/247 ,  H01L29/66969 ,  H01L29/78696

Abstract: An object is to control composition and a defect of an oxide semiconductor, another object is to increase a field effect mobility of a thin film transistor and to obtain a sufficient on-off ratio with a reduced off current. A solution is to employ an oxide semiconductor whose composition is represented by InMO3(ZnO)m, where M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al, and m is preferably a non-integer number of greater than 0 and less than 1. The concentration of Zn is lower than the concentrations of In and M. The oxide semiconductor has an amorphous structure. Oxide and nitride layers can be provided to prevent pollution and degradation of the oxide semiconductor.

公开(公告)号：US20220190166A1

公开(公告)日：2022-06-16

申请号：US17687817

申请日：2022-03-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro SAKATA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L21/02 ,  H01L27/12 ,  H01L29/66 ,  H01L29/08 ,  H01L29/10 ,  H01L29/24

Abstract: It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer.

公开(公告)号：US20220139967A1

公开(公告)日：2022-05-05

申请号：US17573792

申请日：2022-01-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro SAKATA ,  Toshinari SASAKI ,  Miyuki HOSOBA

IPC: H01L27/12 ,  H01L29/786 ,  H01L21/02 ,  H01L29/24 ,  H01L29/66

Abstract: An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced.

公开(公告)号：US20210384356A1

公开(公告)日：2021-12-09

申请号：US17349974

申请日：2021-06-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Ryosuke WATANABE ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/04

Abstract: To provide a transistor having a favorable electric characteristics and high reliability and a display device including the transistor. The transistor is a bottom-gate transistor formed using an oxide semiconductor for a channel region. An oxide semiconductor layer subjected to dehydration or dehydrogenation through heat treatment is used as an active layer. The active layer includes a first region of a superficial portion microcrystallized and a second region of the rest portion. By using the oxide semiconductor layer having such a structure, a change to an n-type, which is attributed to entry of moisture to the superficial portion or elimination of oxygen from the superficial portion, and generation of a parasitic channel can be suppressed. In addition, contact resistance between the oxide semiconductor layer and source and drain electrodes can be reduced.

公开(公告)号：US20210175256A1

公开(公告)日：2021-06-10

申请号：US17105801

申请日：2020-11-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masayuki SAKAKURA ,  Yoshiaki OIKAWA ,  Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Miyuki HOSOBA

IPC: H01L27/12 ,  G02F1/1343 ,  G02F1/1345 ,  G02F1/1368

Abstract: The semiconductor device includes a driver circuit portion including a driver circuit and a pixel portion including a pixel. The pixel includes a gate electrode layer having a light-transmitting property, a gate insulating layer, a source electrode layer and a drain electrode layer each having a light-transmitting property provided over the gate insulating layer, an oxide semiconductor layer covering top surfaces and side surfaces of the source electrode layer and the drain electrode layer and provided over the gate electrode layer with the gate insulating layer therebetween, a conductive layer provided over part of the oxide semiconductor layer and having a lower resistance than the source electrode layer and the drain electrode layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer.