摘要:
An automatic drying apparatus and a method of controlling the same is disclosed, enabling exact drying by using a humidity sensor (37) provided at a location having a stabilized output characteristic for automatic drying, the automatic drying apparatus including a heating apparatus (31) for heating air supplied into a drum into which a drying object is introduced, a fan (32) for forcibly drawing air into the drum; and a humidity sensor (37) provided between the fan (32) and the heating apparatus (37) such that a sensing surface is positioned to be parallel to a flowing direction of air passed through the fan (32), for outputting a sensing voltage value for determining dryness of the drying object.
摘要:
A method and system for inter-port communication utilizing a multi-port memory device. The memory device contains an interrupt register, an interrupt signal interface (e.g., a dedicated pin), an interrupt mask, and one or more message buffers associated with each port. When a first component coupled to a first port of the memory device wants to communicate with a second component coupled to a second port of the memory device, the first component writes a message to a message buffer associated with the second port. An interrupt in the input register of the second port is set to notify the second component coupled to the second port that a new message is available. Upon receiving the interrupt, the second component reads the interrupt register to determine the nature of the interrupt. The second component then reads the message from the message buffer.
摘要:
A pedicure spa with antibacterial function includes a tub having a surface and a gel coating on the surface of the tub. The gel coating includes an industrially applicable gel coating mixed with silver nano-particles having a diameter in the range of approximately 10-35 nm such that a concentration of the silver nano-particles is approximately 50-200 ppm.
摘要:
A backlight unit includes a substrate, a plurality of light emitting diodes disposed at corners of a polygon or arranged side by side on the substrate, and a plurality of lenses coupled to the light emitting diodes for directing the lights emitted from the light emitting diodes in a predetermined direction. The light emitting diodes are comprised of at least three light emitting diodes capable of cooperating with each other to create a white light. Each of the lenses has an asymmetrical irradiation characteristic such that the lenses allow the lights to be irradiated on a predetermined target region and uniformly mixed with each other. The lenses are designed and oriented to irradiate the lights in an elliptical shape close to a rectangle toward a top portion of the backlight unit.
摘要:
A method of manufacturing a vertical GaN-based LED includes forming a nitride-based buffer layer on a silicon substrate; sequentially forming a p-type GaN layer, an active layer, and an n-type GaN layer on the nitride-based buffer layer; forming an n-electrode on the n-type GaN layer; forming a plating seed layer on the n-electrode; forming a structure supporting layer on the plating seed layer; removing the silicon substrate through wet etching and forming roughness on the surface of the p-type GaN layer through over-etching; and forming a p-electrode on the p-type GaN layer having the roughness formed.
摘要:
A polymer for filling gaps in a semiconductor substrate and a composition using the polymer are provided. According to the composition, holes having a diameter of 100 nm or less and an aspect ratio (i.e. a ratio between the diameter and height of the holes) of 1 or higher in semiconductor substrates can be substantially completely filled by common spin coating without formation of defects, e.g., air voids, the film can be dissolved by an aqueous alkaline solution (i.e. a developing solution) until a desired thickness is reached, the film is highly resistant to isopropyl alcohol (IPA) and plasma etching after curing by baking, and residue can be rapidly removed from the inside of the holes by ashing.
摘要:
Disclosed is a method of charging a low temperature liquefied gas in a gaseous state in a high pressure charging cylinder using a pump. The method is advantageous in that it is possible to charge a low temperature liquefied gas which is to be made highly pure in a high pressure gas cylinder using a simple process in which purity is not changed and little energy is consumed during the charging of the liquefied gas.
摘要:
An elongated pie shaped composite cleaning device for removing snow, frost, scraped ice debris, bird droppings, dirt or water from a automotive exterior surface has 1. a stiff rectangular plastic sheet, folded into half, providing a pair of slightly curbed exterior sides and a pair of substantially straight scraping edges, 2. a rectangular open cell foam, with a uniform thickness and shape substantially identical to said sheet, folded into half, providing a pair of legs between said sides, a squeezed interface between said legs and a pair of exposure cleaning faces, 3. a thin retaining rod surrounded by the folded middle parts of said sheet and said foam, and 4. a fabricated channel shape holder clamping said folded sheet, said folded foam around said retaining rod and having a means of securely attaching to a handle and either a ice scraper or a squeegee.
摘要:
The invention relates to a high power LED package and a fabrication method thereof. The LED package includes a light emitting part for generating light in response to power applied, a heat conducting member with the light emitting part mounted thereon, a lead part for electrically connecting the light emitting part and a board, and a mold part for integrally fixing the heat conducting member and the lead part. The heat conducting member is composed of at least two metal layers in a height direction, and the lead part includes at least one first lead extended out of the heat conducting member and at least one second lead separated from the heat conducting member. The invention allows integration of two components into a single one, reducing the number of components and simplifying the assembly process, thereby reducing the manufacturing costs.
摘要:
Disclosed herein is a polishing slurry for use in an STI CMP process, necessary for fabricating ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 μm or less), which can polish wafers at a high removal rate, having an excellent the removal selectivity of oxide compared to nitride. The polishing slurry can be applied to various patterns required in the course of producing ultra highly integrated semiconductors, and thus excellent removal rate, removal selectivity, and within-wafer-nonuniformity (WIWNU), which indicates removal uniformity, as well as minimal occurrence of micro scratches, can be assured.