公开(公告)号：US20120037993A1

公开(公告)日：2012-02-16

申请号：US13280716

申请日：2011-10-25

申请人： Shunpei YAMAZAKI ,  Yuugo Goto ,  Tsutomu Murakawa

发明人： Shunpei YAMAZAKI ,  Yuugo Goto ,  Tsutomu Murakawa

IPC分类号： H01L29/78 ,  H01L29/06

CPC分类号： H01L27/1218

摘要： A semiconductor device in which damages to an element such as a transistor are reduced even when external force such as bending is applied and stress is generated in the semiconductor device. The semiconductor device includes a first island-like reinforcement film over a substrate having flexibility; a semiconductor film including a channel formation region and an impurity region over the first island-like reinforcement film; a first conductive film over the channel formation region with a gate insulating film interposed therebetween; a second island-like reinforcement film covering the first conductive film and the gate insulating film.

摘要翻译： 即使在施加诸如弯曲的外力并且在半导体器件中产生应力的情况下，诸如晶体管的元件的损坏也减小的半导体器件。 半导体器件包括在具有柔性的衬底上的第一岛状增强膜; 包括第一岛状增强膜上的沟道形成区域和杂质区域的半导体膜; 在沟道形成区域上的第一导电膜，其间插入有栅极绝缘膜; 覆盖第一导电膜和栅极绝缘膜的第二岛状加强膜。

公开(公告)号：US20120032159A1

公开(公告)日：2012-02-09

申请号：US13277478

申请日：2011-10-20

申请人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Masaharu NAGAI ,  Yutaka MATSUDA ,  Kengo AKIMOTO ,  Gen FUJII ,  Tetsuji YAMAGUCHI

发明人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Masaharu NAGAI ,  Yutaka MATSUDA ,  Kengo AKIMOTO ,  Gen FUJII ,  Tetsuji YAMAGUCHI

IPC分类号： H01L51/52

CPC分类号： H01L51/529 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3276 ,  H01L29/66757 ,  H01L51/5206 ,  H01L51/5246 ,  H01L2251/5315 ,  H01L2251/5323

摘要： It is an object of the present invention to provide a reliable display device and a method for manufacturing the display device reducing the number of manufacturing steps, and with higher yield. A display device according to the invention includes a plurality of display elements each having a first electrode, a layer containing an organic compound, and a second electrode. The display device further includes a heat-resistant planarizing film over a substrate having an insulating surface, a first electrode over the heat-resistant, planarizing film, a wiring covering an end portion of the first electrode, a partition wall covering the end portion of first electrode and the wiring, a layer containing an organic compound, and a second electrode over the layer containing an organic compound.

摘要翻译： 本发明的目的是提供一种可靠的显示装置和用于制造显示装置的方法，其减少制造步骤的数量，并且以更高的产量。 根据本发明的显示装置包括多个显示元件，每个显示元件具有第一电极，含有有机化合物的层和第二电极。 显示装置还包括在具有绝缘表面的基板上的耐热平面化膜，在耐热平坦化膜上的第一电极，覆盖第一电极的端部的布线，覆盖第一电极的端部的分隔壁 第一电极和布线，含有有机化合物的层，以及包含有机化合物的层上的第二电极。

公开(公告)号：US20120025186A1

公开(公告)日：2012-02-02

申请号：US13270416

申请日：2011-10-11

申请人： Shunpei YAMAZAKI ,  Takeshi NISHI ,  Mayumi MIZUKAMI ,  Hisao IKEDA

发明人： Shunpei YAMAZAKI ,  Takeshi NISHI ,  Mayumi MIZUKAMI ,  Hisao IKEDA

IPC分类号： H01L51/52 ,  H01L51/54

CPC分类号： H01L27/3244 ,  H01L27/3211 ,  H01L27/3276 ,  H01L51/0059 ,  H01L51/5012 ,  H01L51/5016 ,  H01L51/5036 ,  H01L51/5048 ,  H01L51/56 ,  H01L2251/5315 ,  H01L2251/558 ,  Y10S428/917

摘要： The luminance of different colors of light emitted from EL elements in a pixel portion of a light emitting device is equalized and the luminance of light emitted from the EL elements is raised. The pixel portion of the light emitting device has EL elements whose EL layers contain triplet compounds and EL elements whose EL layers contain singlet compounds in combination. The luminance of light emitted from the plural EL elements is thus equalized. Furthermore, a hole transporting layer has a laminate structure to thereby cause the EL elements to emit light of higher luminance.

摘要翻译： 从发光元件的像素部分的EL元件发出的不同颜色的光的亮度被均衡，从EL元件发出的光的亮度升高。 发光器件的像素部分具有EL层，其EL层含有三重态化合物，EL层包含单层化合物的EL层。 因此，从多个EL元件发射的光的亮度相等。 此外，空穴传输层具有层叠结构，从而使EL元件发射更高亮度的光。

公开(公告)号：US20120021540A1

公开(公告)日：2012-01-26

申请号：US13244397

申请日：2011-09-24

申请人： Hidekazu TAKAHASHI ,  Daiki YAMADA ,  Yohei MONMA ,  Takahiro IGUCHI ,  Hiroki ADACHI ,  Shunpei YAMAZAKI

发明人： Hidekazu TAKAHASHI ,  Daiki YAMADA ,  Yohei MONMA ,  Takahiro IGUCHI ,  Hiroki ADACHI ,  Shunpei YAMAZAKI

IPC分类号： H01L21/66 ,  H01L31/0203

CPC分类号： H01L27/14625 ,  H01L27/14806 ,  H01L31/075

摘要： A semiconductor device includes a plurality of semiconductor integrated circuits bonded to a structure body in which a fibrous body is impregnated with an organic resin. The plurality of semiconductor integrated circuits are provided at openings formed in the structure body and each include a photoelectric conversion element, a light-transmitting substrate which has stepped sides and in which the width of the projected section on a first surface side is smaller than that of a second surface, a semiconductor integrated circuit portion provided on the second surface of the light-transmitting substrate, and a chromatic color light-transmitting resin layer which covers the first surface and part of side surfaces of the light-transmitting substrate. The plurality of semiconductor integrated circuits include the chromatic color light-transmitting resin layers of different colors.

摘要翻译： 半导体器件包括多个半导体集成电路，该多个半导体集成电路与结构体结合，纤维体浸渍有机树脂。 多个半导体集成电路设置在形成在结构体中的开口处，并且各自包括光电转换元件，具有阶梯侧的透光基板，第一表面侧的突出部的宽度小于 设置在透光基板的第二表面上的半导体集成电路部分和覆盖透光基板的第一表面和侧表面的彩色透光树脂层。 多个半导体集成电路包括不同颜色的彩色透光树脂层。

公开(公告)号：US20120019567A1

公开(公告)日：2012-01-26

申请号：US13184587

申请日：2011-07-18

申请人： Shunpei YAMAZAKI ,  Jun KOYAMA

发明人： Shunpei YAMAZAKI ,  Jun KOYAMA

IPC分类号： G09G3/36 ,  G09G5/02 ,  G09G5/10

CPC分类号： G09G3/3677 ,  G09G3/3413 ,  G09G3/342 ,  G09G3/3688 ,  G09G2310/0205 ,  G09G2310/0218 ,  G09G2310/0235 ,  G09G2310/0286 ,  G09G2310/0291 ,  G09G2310/08 ,  G09G2320/0242

摘要： To improve the image quality of a liquid crystal display device. In the liquid crystal display device, writing of an image signal and the turning on the backlights are not sequentially performed in the entire pixel portion but are sequentially performed per specific region of the pixel portion. Thus, it is possible to increase the frequency of input of an image signal to each pixel of the liquid crystal display device. Accordingly, deterioration of display such as color break generated in the liquid crystal display device can be suppressed, and the image quality can be improved.

摘要翻译： 提高液晶显示装置的图像质量。 在液晶显示装置中，在整个像素部分中不顺序地执行图像信号的写入和背光的转动，而是在像素部分的每个特定区域依次执行。 因此，可以将图像信号的输入频率增加到液晶显示装置的每个像素。 因此，能够抑制液晶显示装置中产生的色差等显示的劣化，能够提高图像质量。

公开(公告)号：US20120001954A1

公开(公告)日：2012-01-05

申请号：US13167019

申请日：2011-06-23

申请人： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Hiroyuki MIYAKE ,  Kouhei TOYOTAKA

发明人： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Hiroyuki MIYAKE ,  Kouhei TOYOTAKA

IPC分类号： G09G5/10 ,  G09G3/36

CPC分类号： G09G3/3406 ,  G09G3/2025 ,  G09G3/3413 ,  G09G3/3607 ,  G09G3/3659 ,  G09G2300/0456 ,  G09G2330/021

摘要： A liquid crystal display device comprising a backlight and a pixel portion including first to 2n-th scan lines, wherein, in a first case of expressing a color image, first pixels controlled by the first to n-th scan lines are configured to express a first image using at least one of first to third hues supplied in a first rotating order, and second pixels controlled by the (n+1)-th to 2n-th scan lines are configured to express a second image using at least one of the first to third hues supplied in a second rotating order, wherein, in a second case of expressing a monochrome image, the first and second pixels controlled by the first to 2n-th scan lines are configured to express the monochrome image by external light reflected by the reflective pixel electrode, and wherein the first rotating order is different from the second rotating order.

摘要翻译： 一种液晶显示装置，包括背光源和包括第一至第2n扫描线的像素部分，其中，在表示彩色图像的第一种情况下，由第一至第n扫描线控制的第一像素被配置为表示 使用以第一旋转顺序提供的第一至第三色调中的至少一个色调的第一图像，以及由第（n + 1）至第2n扫描线控制的第二像素，被配置为使用至少一个 第一至第三色调以第二旋转顺序提供，其中，在表示单色图像的第二种情况下，由第一至第2n扫描线控制的第一和第二像素被配置为通过由 所述反射像素电极，并且其中所述第一旋转顺序与所述第二旋转顺序不同。

公开(公告)号：US20110309368A1

公开(公告)日：2011-12-22

申请号：US13223582

申请日：2011-09-01

申请人： Shunpei YAMAZAKI ,  Masahiko HAYAKAWA ,  Yoshifumi TANADA ,  Mitsuaki OSAME ,  Aya ANZAI ,  Ryota FUKUMOTO

发明人： Shunpei YAMAZAKI ,  Masahiko HAYAKAWA ,  Yoshifumi TANADA ,  Mitsuaki OSAME ,  Aya ANZAI ,  Ryota FUKUMOTO

IPC分类号： H01L33/08

CPC分类号： H01L27/3262 ,  G09G3/3233 ,  G09G2310/0251 ,  G09G2330/04 ,  H01L27/0248 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1255 ,  H01L27/3248 ,  H01L27/3265 ,  H01L27/3276 ,  H01L29/78675

摘要： Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.

摘要翻译： 半导体元件由于静电放电损坏而劣化或被破坏。 本发明提供一种其中在每个像素中形成保护装置的半导体器件。 保护装置设置有从由电阻元件，电容器元件和整流元件组成的组中选择的一个或多个元件。 通过在发光元件的像素电极和源电极之间设置保护装置，可以减轻由于在像素电极中积聚的电荷导致的晶体管的源电极或漏电极的电位的突然变化，或 晶体管的漏极。 因此防止了由于静电放电损坏导致的半导体元件的劣化或破坏。

公开(公告)号：US20110284839A1

公开(公告)日：2011-11-24

申请号：US13107283

申请日：2011-05-13

申请人： Shunpei YAMAZAKI ,  Toshinari SASAKI ,  Kosei NODA

发明人： Shunpei YAMAZAKI ,  Toshinari SASAKI ,  Kosei NODA

IPC分类号： H01L29/04 ,  H01L21/20

CPC分类号： H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/385 ,  H01L27/1225 ,  H01L29/7869

摘要： It is an object to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. An oxide semiconductor film serving as a channel formation region of a transistor is formed by a sputtering method at a temperature higher than 200° C., so that the number of water molecules eliminated from the oxide semiconductor film can be 0.5/nm3 or less according to thermal desorption spectroscopy. A substance including a hydrogen atom such as hydrogen, water, a hydroxyl group, or hydride which causes variation in the electric characteristics of a transistor including an oxide semiconductor is prevented from entering the oxide semiconductor film, whereby the oxide semiconductor film can be highly purified and made to be an electrically i-type (intrinsic) semiconductor.

摘要翻译： 本发明的目的是提供一种具有稳定的电特性和高可靠性的氧化物半导体的半导体装置。 通过溅射法在高于200℃的温度下形成用作晶体管的沟道形成区的氧化物半导体膜，从氧化物半导体膜中除去的水分子数可以为0.5nm / nm 3以下 到热解吸光谱。 包含氢原子的物质，例如氢，水，羟基或氢化物，其导致包括氧化物半导体的晶体管的电特性发生变化，从而防止氧化物半导体膜进入氧化物半导体膜，由此氧化物半导体膜可以被高度纯化 并制成电i型（本征）半导体。

公开(公告)号：US20110272701A1

公开(公告)日：2011-11-10

申请号：US13187584

申请日：2011-07-21

申请人： Shunpei YAMAZAKI ,  Yoshiyuki KUROKAWA ,  Yasuhiro JINBO ,  Satoshi KOBAYASHI ,  Daisuke KAWAE

发明人： Shunpei YAMAZAKI ,  Yoshiyuki KUROKAWA ,  Yasuhiro JINBO ,  Satoshi KOBAYASHI ,  Daisuke KAWAE

IPC分类号： H01L29/786

CPC分类号： H01L29/4908 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/04 ,  H01L29/41733 ,  H01L29/66765 ,  H01L29/78696

摘要： A thin film transistor with excellent electric characteristics, a display device having the thin film transistor, and a method for manufacturing the thin film transistor and the display device are proposed. The thin film transistor includes a gate insulating film formed over a gate electrode, a microcrystalline semiconductor film formed over the gate insulating film, a buffer layer formed over the microcrystalline semiconductor film, a pair of semiconductor films to which an impurity element imparting one conductivity type is added and which are formed over the buffer layer, and wirings formed over the pair of semiconductor films to which the impurity element imparting one conductivity type is added. A part of the gate insulating film or the entire gate insulating film, and/or a part of the microcrystalline semiconductor or the entire microcrystalline semiconductor includes an impurity element which serves as a donor.

摘要翻译： 提出了具有优异电特性的薄膜晶体管，具有薄膜晶体管的显示装置，以及制造薄膜晶体管和显示装置的方法。 薄膜晶体管包括形成在栅电极上的栅极绝缘膜，形成在栅极绝缘膜上的微晶半导体膜，形成在微晶半导体膜上的缓冲层，一对半导体膜，赋予一种导电型的杂质元素 并且形成在缓冲层之上，并且在添加有赋予一种导电类型的杂质元素的一对半导体膜上形成的布线。 栅极绝缘膜或整个栅极绝缘膜的一部分和/或微晶半导体的一部分或整个微晶半导体包括用作供体的杂质元素。

公开(公告)号：US20110263059A1

公开(公告)日：2011-10-27

申请号：US13097445

申请日：2011-04-29

申请人： Toru TAKAYAMA ,  Shunpei YAMAZAKI

发明人： Toru TAKAYAMA ,  Shunpei YAMAZAKI

IPC分类号： H01L33/40

CPC分类号： G02F1/136286 ,  G02F1/13454 ,  G02F2001/136295 ,  H01L27/124 ,  H01L27/3279 ,  H01L27/3293 ,  H01L2251/5315

摘要： The present invention provides a structure of a semiconductor device that realizes low power consumption even where increased in screen size, and a method for manufacturing the same. The invention forms an insulating layer, forms a buried interconnection (of. Cu, Au, Ag, Ni, Cr, Pd, Rh, Sn, Pb or an alloy thereof) in the insulating layer. Furthermore, after planarizing the surface of the insulating layer, a metal protection film (Ti, TiN, Ta, TaN or the like) is formed in an exposed part. By using the buried interconnection in part of various lines (gate line, source line, power supply line, common line and the like) for a light-emitting device or liquid-crystal display device, line resistance is decreased.

摘要翻译： 本发明提供即使在屏幕尺寸增加的情况下实现低功耗的半导体器件的结构及其制造方法。 本发明形成绝缘层，在绝缘层中形成埋置互连（Cu，Au，Ag，Ni，Cr，Pd，Rh，Sn，Pb或其合金）。 此外，在平坦化绝缘层的表面之后，在暴露部分中形成金属保护膜（Ti，TiN，Ta，TaN等）。 通过在发光装置或液晶显示装置的各种线路（栅极线，源极线，电源线，公共线等）的一部分中使用埋入布线，线电阻降低。