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公开(公告)号：US08283862B2
公开(公告)日：2012-10-09
申请号：US12905568
申请日：2010-10-15
IPC分类号： H05B33/22
CPC分类号： H01L27/3258 , H01L21/31608 , H01L27/3246 , H01L27/3276 , H01L51/5206 , H01L51/5218 , H01L51/5246 , H01L51/5281 , H01L51/529 , H01L2251/5315 , H01L2251/5323
摘要： An object of the present invention is to realize a light emitting device having low power consumption and high stability, in addition to improve extraction efficiency of light generated in a light emitting element. At least an interlayer insulating film (including a planarizing film), an anode, and a bank covering an edge portion of the anode contain chemically and physically stable silicon oxide, or are made of a material containing silicon oxide as its main component in order to accomplish a light emitting device having high stability. Generation of heat in a light emitting panel can be suppressed in addition to increase in efficiency (luminance/current) of a light emitting panel according to the structure of the present invention. Consequently, synergistic effect on reliability of a light emitting device is obtained.
摘要翻译： 本发明的目的是提供一种具有低功耗和高稳定性的发光器件，同时提高了在发光元件中产生的光的提取效率。 至少层间绝缘膜（包括平坦化膜），阳极和覆盖阳极的边缘部分的堤包含化学和物理稳定的氧化硅，或由含有氧化硅作为其主要成分的材料制成，以便 实现了具有高稳定性的发光器件。 除了根据本发明的结构提高发光面板的效率（亮度/电流）之外，还可以抑制发光面板中的发热。 因此，获得了对发光器件的可靠性的协同效应。
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公开(公告)号：US08218099B2
公开(公告)日：2012-07-10
申请号：US12871162
申请日：2010-08-30
申请人： Shunpei Yamazaki , Masayuki Sakakura , Junichiro Sakata , Masashi Tsubuku , Kengo Akimoto , Miyuki Hosoba , Yoshiaki Oikawa
发明人： Shunpei Yamazaki , Masayuki Sakakura , Junichiro Sakata , Masashi Tsubuku , Kengo Akimoto , Miyuki Hosoba , Yoshiaki Oikawa
IPC分类号： G02F1/136
CPC分类号： H01L27/1225
摘要： An object is to provide an active matrix liquid crystal display device in which plural kinds of circuits are formed over one substrate and plural kinds of thin film transistors are provided corresponding to characteristics of the plural kinds of circuits. An inverted-coplanar thin film transistor including an oxide semiconductor layer which is over and overlaps with a source electrode layer and a drain electrode layer is used for a pixel thin film transistor. A channel-protective thin film transistor is used for a driver-circuit thin film transistor is used. In addition, main parts of the pixel thin film transistor are formed using a light-transmitting material, so that the aperture ratio is increased.
摘要翻译： 本发明提供一种有源矩阵液晶显示装置，其中在一个基板上形成多种电路，并且根据多种电路的特性设置多种薄膜晶体管。 包括与源电极层和漏电极层重叠的氧化物半导体层的倒共面薄膜晶体管用于像素薄膜晶体管。 使用通道保护薄膜晶体管用于驱动电路薄膜晶体管。 此外，使用透光材料形成像素薄膜晶体管的主要部分，使得开口率增加。
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公开(公告)号：US08193031B2
公开(公告)日：2012-06-05
申请号：US12948222
申请日：2010-11-17
IPC分类号： H01L21/00
CPC分类号： H01L29/78696 , G02F1/133528 , G02F1/1339 , G02F1/134336 , G02F1/136286 , G02F1/1368 , G02F1/167 , G02F2001/133302 , G02F2001/133531 , G02F2201/121 , G02F2201/123 , G09G3/3677 , G09G2310/0286 , G09G2310/08 , H01L21/02107 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/02672 , H01L21/324 , H01L21/477 , H01L21/67115 , H01L27/1225 , H01L27/127 , H01L27/3262 , H01L29/66969 , H01L29/7869
摘要： An object is to provide a semiconductor device having stable electric characteristics in which an oxide semiconductor is used. An oxide semiconductor layer is subjected to heat treatment for dehydration or dehydrogenation treatment in a nitrogen gas or an inert gas atmosphere such as a rare gas (e.g., argon or helium) or under reduced pressure and to a cooling step for treatment for supplying oxygen in an atmosphere of oxygen, an atmosphere of oxygen and nitrogen, or the air (having a dew point of preferably lower than or equal to −40° C., still preferably lower than or equal to −50° C.) atmosphere. The oxide semiconductor layer is thus highly purified, whereby an i-type oxide semiconductor layer is formed. A semiconductor device including a thin film transistor having the oxide semiconductor layer is manufactured.
摘要翻译： 目的在于提供一种使用氧化物半导体的具有稳定电特性的半导体器件。 在氮气或惰性气体气氛（例如氩气或氦气）或减压下对氧化物半导体层进行脱水或脱氢处理的热处理，并进行用于在 氧气和氮气气氛或空气（露点优选低于或等于-40℃，更优选低于或等于-50℃）气氛。 因此，氧化物半导体层被高度纯化，从而形成i型氧化物半导体层。 制造包括具有氧化物半导体层的薄膜晶体管的半导体器件。
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公开(公告)号：US20110140598A1
公开(公告)日：2011-06-16
申请号：US13034871
申请日：2011-02-25
IPC分类号： H01J1/62
CPC分类号： H01L27/3246 , H01L27/3244 , H01L27/3248 , H01L27/3258 , H01L27/3281 , H01L27/3283 , H01L27/3288 , H01L51/52 , H01L51/5206 , H01L51/5234 , H01L51/5253 , H01L51/5262 , H01L2251/5323
摘要： It is an object of the present invention is to provide a light-emitting device in which high luminance can be obtained with low power consumption by improving the extraction efficiency. A light-emitting device of the invention comprises an insulating film, a plurality of first electrodes being in contact with the insulating film and formed on the insulating film to be in parallel, an electroluminescent layer formed over the plurality of first electrodes, and a plurality of second electrodes intersecting with the plurality of first electrodes and formed over the electroluminescent layer in parallel, wherein the insulating film contains nitrogen and silicon and the first electrodes contain a conductive transparent oxide material and silicon oxide.
摘要翻译： 本发明的目的是提供一种通过提高提取效率可以以低功耗获得高亮度的发光装置。 本发明的发光器件包括绝缘膜，多个第一电极与绝缘膜接触并形成在绝缘膜上并联，形成在多个第一电极上的电致发光层，以及多个第一电极 的第二电极与所述多个第一电极相交并并联形成在所述电致发光层上，其中所述绝缘膜包含氮和硅，并且所述第一电极包含导电透明氧化物材料和氧化硅。
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公开(公告)号：US20110108834A1
公开(公告)日：2011-05-12
申请号：US12917569
申请日：2010-11-02
IPC分类号： H01L29/24
CPC分类号： H01L29/45 , G02F1/1368 , H01L29/7869
摘要： An object is, in a thin film transistor including an oxide semiconductor layer, to reduce contact resistance between the oxide semiconductor layer and source and drain electrode layers electrically connected to the oxide semiconductor layer. The source and drain electrode layers have a stacked-layer structure of two or more layers in which a layer in contact with the oxide semiconductor layer is formed using an oxide of a metal whose work function is lower than the work function of the oxide semiconductor layer or an oxide of an alloy containing such a metal. Layers other than the layer in contact with the oxide semiconductor layer of the source and drain electrode layers are formed using an element selected from Al, Cr, Cu, Ta, Ti, Mo, or W, an alloy containing any of these elements as a component, an alloy containing any of these elements in combination, or the like.
摘要翻译： 在包括氧化物半导体层的薄膜晶体管中，目的是减少氧化物半导体层与与氧化物半导体层电连接的源电极层和漏电极层之间的接触电阻。 源极和漏极层具有两层或多层的层叠结构，其中使用其功函数低于氧化物半导体层的功函数的金属的氧化物形成与氧化物半导体层接触的层 或含有这种金属的合金的氧化物。 使用选自Al，Cr，Cu，Ta，Ti，Mo或W的元素形成与源极和漏极电极层的氧化物半导体层接触的层以外的层，包含任何这些元素作为 组分，包含任何这些元素组合的合金等。
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公开(公告)号：US20110084272A1
公开(公告)日：2011-04-14
申请号：US12900136
申请日：2010-10-07
申请人： Akiharu Miyanaga , Junichiro Sakata , Masayuki Sakakura , Masahiro Takahashi , Hideyuki Kishida , Shunpei Yamazaki
发明人： Akiharu Miyanaga , Junichiro Sakata , Masayuki Sakakura , Masahiro Takahashi , Hideyuki Kishida , Shunpei Yamazaki
IPC分类号： H01L29/22 , H01L21/336
CPC分类号： H01L29/7869 , H01L27/1214 , H01L27/1222 , H01L27/1225 , H01L27/3262 , H01L29/42384 , H01L29/45 , H01L29/4908 , H01L29/78618
摘要： An object is to provide a thin film transistor having favorable electric characteristics and a semiconductor device including the thin film transistor as a switching element. The thin film transistor includes a gate electrode formed over an insulating surface, a gate insulating film over the gate electrode, an oxide semiconductor film which overlaps with the gate electrode over the gate insulating film and which includes a layer where the concentration of one or a plurality of metals contained in the oxide semiconductor is higher than that in other regions, a pair of metal oxide films formed over the oxide semiconductor film and in contact with the layer, and a source electrode and a drain electrode in contact with the metal oxide films. The metal oxide films are formed by oxidation of a metal contained in the source electrode and the drain electrode.
摘要翻译： 目的是提供一种具有良好电特性的薄膜晶体管和包括薄膜晶体管作为开关元件的半导体器件。 薄膜晶体管包括形成在绝缘表面上的栅极电极，栅电极上的栅极绝缘膜，与栅极绝缘膜上的栅电极重叠的氧化物半导体膜，并且包括其中浓度为1或 包含在氧化物半导体中的多种金属高于其他区域，形成在氧化物半导体膜上并与该层接触的一对金属氧化物膜，以及与金属氧化物膜接触的源电极和漏电极 。 金属氧化物膜通过氧化源电极和漏电极中所含的金属而形成。
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97.发明授权Light-emitting device having a thin insulating film made of nitrogen and silicon and an electrode made of conductive transparent oxide and silicon dioxide 有权具有由氮和硅制成的薄绝缘膜和由导电透明氧化物和二氧化硅制成的电极的发光器件公开(公告)号：US07902747B2
公开(公告)日：2011-03-08
申请号：US10967143
申请日：2004-10-19
IPC分类号： H01J1/62
CPC分类号： H01L27/3246 , H01L27/3244 , H01L27/3248 , H01L27/3258 , H01L27/3281 , H01L27/3283 , H01L27/3288 , H01L51/52 , H01L51/5206 , H01L51/5234 , H01L51/5253 , H01L51/5262 , H01L2251/5323
摘要： It is an object of the present invention is to provide a light-emitting device in which high luminance can be obtained with low power consumption by improving the extraction efficiency. A light-emitting device of the invention comprises an insulating film, a plurality of first electrodes being in contact with the insulating film and formed on the insulating film to be in parallel, an electroluminescent layer formed over the plurality of first electrodes, and a plurality of second electrodes intersecting with the plurality of first electrodes and formed over the electroluminescent layer in parallel, wherein the insulating film contains nitrogen and silicon and the first electrodes contain a conductive transparent oxide material and silicon oxide.
摘要翻译： 本发明的目的是提供一种通过提高提取效率可以以低功耗获得高亮度的发光装置。 本发明的发光器件包括绝缘膜，多个第一电极与绝缘膜接触并形成在绝缘膜上并联，形成在多个第一电极上的电致发光层，以及多个第一电极 的第二电极与所述多个第一电极相交并并联形成在所述电致发光层上，其中所述绝缘膜包含氮和硅，并且所述第一电极包含导电透明氧化物材料和氧化硅。
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公开(公告)号：US20110037068A1
公开(公告)日：2011-02-17
申请号：US12846585
申请日：2010-07-29
IPC分类号： H01L29/786 , H01L21/44
CPC分类号： H01L27/3262 , G06F1/163 , H01L21/02614 , H01L27/1218 , H01L27/1222 , H01L27/1225 , H01L29/04 , H01L29/24 , H01L29/66969 , H01L29/78603 , H01L29/7869 , H01L29/78696 , H04B1/16
摘要： One object is to provide a semiconductor device with a structure which enables reduction in parasitic capacitance sufficiently between wirings. In a bottom-gate type thin film transistor including a stacked layer of a first layer which is a metal thin film oxidized partly or entirely and an oxide semiconductor layer, the following oxide insulating layers are formed together: an oxide insulating layer serving as a channel protective layer which is over and in contact with a part of the oxide semiconductor layer overlapping with a gate electrode layer; and an oxide insulating layer which covers a peripheral portion and a side surface of the stacked oxide semiconductor layer.
摘要翻译： 一个目的是提供具有能够在布线之间充分降低寄生电容的结构的半导体器件。 在包括作为部分或全部氧化的金属薄膜的第一层的堆叠层和氧化物半导体层的底栅型薄膜晶体管中，形成以下氧化物绝缘层：作为沟道的氧化物绝缘层 与氧化物半导体层的与栅电极层重叠的部分结合并接触的保护层; 以及覆盖层叠的氧化物半导体层的周边部分和侧面的氧化物绝缘层。
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公开(公告)号：US07850501B2
公开(公告)日：2010-12-14
申请号：US11687204
申请日：2007-03-16
IPC分类号： H01J1/62
CPC分类号： H01L27/3244 , H01L27/322 , H01L27/3276 , H01L51/5048 , H01L51/5088 , H01L51/5092 , H01L51/52 , H01L51/5206 , H01L51/5215 , H01L51/5218 , H01L51/5234 , H01L51/5237 , H01L51/5246 , H01L51/5253 , H01L51/5259 , H01L51/56
摘要： Techniques are provided for manufacturing a light-emitting device having high internal quantum efficiency, consuming less power, having high luminance, and having high reliability. The techniques include forming a conductive light-transmitting oxide layer comprising a conductive light-transmitting oxide material and silicon oxide, forming a barrier layer in which density of the silicon oxide is higher than that in the conductive light-transmitting oxide layer over the conductive light-transmitting oxide layer, forming an anode having the conductive light-transmitting oxide layer and the barrier layer, heating the anode under a vacuum atmosphere, forming an electroluminescent layer over the heated anode, and forming a cathode over the electroluminescent layer. According to the techniques, the barrier layer is formed between the electroluminescent layer and the conductive light-transmitting oxide layer.
摘要翻译： 提供了用于制造具有高内部量子效率，消耗较少功率，具有高亮度并且具有高可靠性的发光装置的技术。 这些技术包括形成包含导电透光氧化物材料和氧化硅的导电透光氧化物层，形成阻挡层，其中氧化硅的密度高于导电光上的导电透光氧化物层的密度 形成具有导电透光性氧化物层和阻挡层的阳极，在真空气氛下加热阳极，在加热阳极上形成电致发光层，在电致发光层上形成阴极。 根据该技术，在电致发光层和导电透光性氧化物层之间形成阻挡层。
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公开(公告)号：US07750560B2
公开(公告)日：2010-07-06
申请号：US10577472
申请日：2005-09-26
申请人： Shunpei Yamazaki , Hisao Ikeda , Satoshi Seo , Daisuke Kumaki , Junichiro Sakata
发明人： Shunpei Yamazaki , Hisao Ikeda , Satoshi Seo , Daisuke Kumaki , Junichiro Sakata
CPC分类号： H01L51/5048 , H01L51/0059 , H01L51/0081 , H01L51/5012
摘要： The present invention provides a light-emitting element sandwiching a composite layer in which an organic compound and an inorganic compound are mixed between a first electrode and a second electrode, where the composite layer includes a first layer including a first organic compound and a first inorganic compound that exhibits an electron accepting property to the first organic compound (serves as an electron acceptor), a second layer including a second organic compound and a second inorganic compound, and a third layer including a third organic compound and a third inorganic compound that exhibits an electron donating property to the third organic compound (serves as an electron acceptor).
摘要翻译： 本发明提供了一种夹着复合层的发光元件，其中有机化合物和无机化合物混合在第一电极和第二电极之间，其中复合层包括包含第一有机化合物和第一无机化合物的第一层 对第一有机化合物（用作电子受体）具有电子接受性的化合物，包含第二有机化合物和第二无机化合物的第二层，以及包含第三有机化合物和第三无机化合物的第三层， 向第三有机化合物（用作电子受体）的给电子性质。
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