公开(公告)号：US08890166B2

公开(公告)日：2014-11-18

申请号：US12871184

申请日：2010-08-30

申请人： Masayuki Sakakura ,  Yoshiaki Oikawa ,  Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba

发明人： Masayuki Sakakura ,  Yoshiaki Oikawa ,  Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba

IPC分类号： H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036 ,  H01L27/32 ,  H01L27/12

CPC分类号： H01L27/1251 ,  H01L27/1225 ,  H01L27/322 ,  H01L27/3262

摘要： An object of the present invention is to provide a light-emitting device in which plural kinds of circuits are formed over the same substrate, and plural kinds of thin film transistors are provided in accordance with characteristics of the plural kinds of circuits. An inverted-coplanar thin film transistor, an oxide semiconductor layer of which overlaps with a source and drain electrode layers, and a channel-etched thin film transistor are used as a thin film transistor for a pixel and a thin film transistor for a driver circuit, respectively. Between the thin film transistor for a pixel and a light-emitting element, a color filter layer is provided so as to overlap with the light-emitting element which is electrically connected to the thin film transistor for a pixel.

摘要翻译： 本发明的目的是提供一种在同一基板上形成多种电路的发光器件，并且根据多种电路的特性提供多种薄膜晶体管。 作为用于像素的薄膜晶体管和用于驱动电路的薄膜晶体管，使用反向共面薄膜晶体管，其与源极和漏极层重叠的氧化物半导体层和沟道蚀刻薄膜晶体管 ， 分别。 在用于像素的薄膜晶体管和发光元件之间，设置滤色器层，以与与像素的薄膜晶体管电连接的发光元件重叠。

公开(公告)号：US08766250B2

公开(公告)日：2014-07-01

申请号：US12950186

申请日：2010-11-19

申请人： Akiharu Miyanaga ,  Junichiro Sakata ,  Masayuki Sakakura ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Shunpei Yamazaki

发明人： Akiharu Miyanaga ,  Junichiro Sakata ,  Masayuki Sakakura ,  Masahiro Takahashi ,  Hideyuki Kishida ,  Shunpei Yamazaki

IPC分类号： H01L29/10

CPC分类号： H01L29/7869 ,  H01L29/10 ,  H01L29/41733

摘要： A thin film transistor including an oxide semiconductor with favorable electrical characteristics is provided. The thin film transistor includes a gate electrode provided over a substrate, a gate insulating film provided over the gate electrode, an oxide semiconductor film provided over the gate electrode and on the gate insulating film, a metal oxide film provided on the oxide semiconductor film, and a metal film provided on the metal oxide film. The oxide semiconductor film is in contact with the metal oxide film, and includes a region whose concentration of metal is higher than that of any other region in the oxide semiconductor film (a high metal concentration region). In the high metal concentration region, the metal contained in the oxide semiconductor film may be present as a crystal grain or a microcrystal.

摘要翻译： 提供了包括具有良好电特性的氧化物半导体的薄膜晶体管。 薄膜晶体管包括设置在基板上的栅极电极，设置在栅极上的栅极绝缘膜，设置在栅电极和栅极绝缘膜上的氧化物半导体膜，设置在氧化物半导体膜上的金属氧化物膜， 以及设置在金属氧化物膜上的金属膜。 氧化物半导体膜与金属氧化物膜接触，并且包括金属的浓度高于氧化物半导体膜中的任何其它区域（高金属浓度区域）的区域。 在高金属浓度区域中，包含在氧化物半导体膜中的金属可以作为晶粒或微晶存在。

公开(公告)号：US08709864B2

公开(公告)日：2014-04-29

申请号：US12938538

申请日：2010-11-03

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Toru Takayama

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Toru Takayama

IPC分类号： H01L21/00

CPC分类号： H01L21/6719 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/67207 ,  H01L29/66969 ,  H01L29/7869

摘要： An object is to provide a deposition apparatus for forming a thin film which contains few impurities such as a hydrogen atom or a carbon atom. Further, an object is to provide a method for forming a thin film containing few impurities. Furthermore, an object is to provide a method for manufacturing a highly reliable semiconductor element including an oxide semiconductor film containing few impurities. A deposition apparatus can be provided for forming a thin film which contains few impurities such as a compound containing a hydrogen atom such as H2O, a compound containing a carbon atom, a hydrogen atom, or a carbon atom can be provided. Further, a method for forming a thin film containing few impurities can be provided. Furthermore, a method for forming a highly reliable semiconductor element including an oxide semiconductor film containing few impurities can be provided.

摘要翻译： 本发明的目的是提供一种用于形成含有少量诸如氢原子或碳原子的杂质的薄膜的沉积装置。 此外，目的在于提供一种形成含有少量杂质的薄膜的方法。 此外，目的在于提供一种制造高可靠性的半导体元件的方法，所述半导体元件包括少量杂质的氧化物半导体膜。 可以提供沉积装置，用于形成含有少量杂质的薄膜，例如含有氢原子的化合物如H 2 O，含有碳原子的化合物，氢原子或碳原子。 此外，可以提供形成含有少量杂质的薄膜的方法。 此外，可以提供形成包含少量杂质的氧化物半导体膜的高可靠性半导体元件的方法。

公开(公告)号：US08530892B2

公开(公告)日：2013-09-10

申请号：US12917569

申请日：2010-11-02

申请人： Shunpei Yamazaki ,  Suzunosuke Hiraishi ,  Kengo Akimoto ,  Junichiro Sakata

发明人： Shunpei Yamazaki ,  Suzunosuke Hiraishi ,  Kengo Akimoto ,  Junichiro Sakata

IPC分类号： H01L29/10 ,  H01L21/16

CPC分类号： H01L29/45 ,  G02F1/1368 ,  H01L29/7869

摘要： An object is, in a thin film transistor including an oxide semiconductor layer, to reduce contact resistance between the oxide semiconductor layer and source and drain electrode layers electrically connected to the oxide semiconductor layer. The source and drain electrode layers have a stacked-layer structure of two or more layers in which a layer in contact with the oxide semiconductor layer is formed using an oxide of a metal whose work function is lower than the work function of the oxide semiconductor layer or an oxide of an alloy containing such a metal. Layers other than the layer in contact with the oxide semiconductor layer of the source and drain electrode layers are formed using an element selected from Al, Cr, Cu, Ta, Ti, Mo, or W, an alloy containing any of these elements as a component, an alloy containing any of these elements in combination, or the like.

摘要翻译： 在包括氧化物半导体层的薄膜晶体管中，目的是减少氧化物半导体层与与氧化物半导体层电连接的源电极层和漏电极层之间的接触电阻。 源极和漏极层具有两层或多层的层叠结构，其中使用其功函数低于氧化物半导体层的功函数的金属的氧化物形成与氧化物半导体层接触的层 或含有这种金属的合金的氧化物。 使用选自Al，Cr，Cu，Ta，Ti，Mo或W的元素形成与源极和漏极电极层的氧化物半导体层接触的层以外的层，包含任何这些元素作为 组分，包含任何这些元素组合的合金等。

公开(公告)号：US08502220B2

公开(公告)日：2013-08-06

申请号：US12848406

申请日：2010-08-02

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Masayuki Sakakura ,  Yoshiaki Oikawa ,  Kenichi Okazaki ,  Hotaka Maruyama

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Masayuki Sakakura ,  Yoshiaki Oikawa ,  Kenichi Okazaki ,  Hotaka Maruyama

IPC分类号： H01L33/40 ,  H01L33/38 ,  H01L33/36

CPC分类号： H01L27/1225 ,  H01L21/385 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/4908 ,  H01L29/78648 ,  H01L29/7869 ,  H01L33/0041 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer which each have a shape whose end portions are located on an inner side than end portions of the semiconductor layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is provided between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected in an opening provided in a gate insulating layer through an oxide conductive layer.

摘要翻译： 目的是提高半导体器件的可靠性。 提供了包括驱动电路部分和在相同基板上的显示部分（也称为像素部分）的半导体器件。 驱动器电路部分和显示部分包括其中半导体层包括氧化物半导体的薄膜晶体管; 第一布线 和第二布线。 薄膜晶体管各自包括源极电极层和漏极电极层，每个源电极层和漏极电极层的端部位于比半导体层的端部更靠内侧的形状。 在驱动电路部分的薄膜晶体管中，半导体层设置在栅电极层和导电层之间。 第一布线和第二布线通过氧化物导电层在设置在栅极绝缘层中的开口中电连接。

公开(公告)号：US08436350B2

公开(公告)日：2013-05-07

申请号：US12692794

申请日：2010-01-25

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hideyuki Kishida

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hideyuki Kishida

IPC分类号： H01L29/10

CPC分类号： H01L29/7869 ,  G02F1/1362 ,  G02F2202/10 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225

摘要： In forming a thin film transistor, an oxide semiconductor layer is used and a cluster containing a titanium compound whose electrical conductance is higher than that of the oxide semiconductor layer is formed between the oxide semiconductor layer and a gate insulating layer.

摘要翻译： 在形成薄膜晶体管时，使用氧化物半导体层，并且在氧化物半导体层和栅极绝缘层之间形成含有电导率高于氧化物半导体层的导电性的钛化合物的簇。

公开(公告)号：US08395148B2

公开(公告)日：2013-03-12

申请号：US12612096

申请日：2009-11-04

申请人： Shunpei Yamazaki ,  Junichiro Sakata

发明人： Shunpei Yamazaki ,  Junichiro Sakata

IPC分类号： H01L29/12

CPC分类号： H01L29/78669 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78678 ,  H01L29/7869 ,  H01L29/78696

摘要： It is an object to provide a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. In addition, it is another object to manufacture a highly reliable semiconductor device at low cost with high productivity. In a semiconductor device including a thin film transistor, a semiconductor layer of the thin film transistor is formed with an oxide semiconductor layer to which a metal element is added. As the metal element, at least one of metal elements of iron, nickel, cobalt, copper, gold, manganese, molybdenum, tungsten, niobium, and tantalum is used. In addition, the oxide semiconductor layer contains indium, gallium, and zinc.

公开(公告)号：US08384079B2

公开(公告)日：2013-02-26

申请号：US12846603

申请日：2010-07-29

申请人： Shunpei Yamazaki ,  Miyuki Hosoba ,  Junichiro Sakata ,  Hideaki Kuwabara

发明人： Shunpei Yamazaki ,  Miyuki Hosoba ,  Junichiro Sakata ,  Hideaki Kuwabara

IPC分类号： H01L29/12

CPC分类号： H01L29/78606 ,  G02F1/1339 ,  G02F1/134336 ,  G02F1/1345 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F1/167 ,  G02F2001/13606 ,  G02F2201/123 ,  G09G3/344 ,  G09G3/3677 ,  G09G2300/0426 ,  G09G2310/0286 ,  G09G2310/08 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1274 ,  H01L27/3262 ,  H01L29/45 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

摘要： An object is to provide a semiconductor device having a structure in which parasitic capacitance between wirings can be efficiently reduced. In a bottom gate thin film transistor using an oxide semiconductor layer, an oxide insulating layer used as a channel protection layer is formed above and in contact with part of the oxide semiconductor layer overlapping with a gate electrode layer, and at the same time an oxide insulating layer covering a peripheral portion (including a side surface) of the stacked oxide semiconductor layer is formed. Further, a source electrode layer and a drain electrode layer are formed in a manner such that they do not overlap with the channel protection layer. Thus, a structure in which an insulating layer over the source electrode layer and the drain electrode layer is in contact with the oxide semiconductor layer is provided.

摘要翻译： 目的在于提供一种半导体器件，其具有可以有效地减少布线之间的寄生电容的结构。 在使用氧化物半导体层的底栅薄膜晶体管中，用作沟道保护层的氧化物绝缘层形成在与栅电极层重叠的氧化物半导体层的一部分上方并与其形成接触，同时氧化物 形成覆盖层叠氧化物半导体层的周边部（包括侧面）的绝缘层。 此外，以与沟道保护层不重叠的方式形成源极电极层和漏极电极层。 因此，提供了源极电极层和漏电极层上的绝缘层与氧化物半导体层接触的结构。

公开(公告)号：US08378570B2

公开(公告)日：2013-02-19

申请号：US13096088

申请日：2011-04-28

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Ryoji Nomura

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Ryoji Nomura

IPC分类号： H01L33/02

CPC分类号： H01L51/52 ,  H01L51/5048 ,  Y10S428/917

摘要： It is an object of the present invention to provide a light emitting element with a low driving voltage. In a light emitting element, a first electrode; and a first composite layer, a second composite layer, a light emitting layer, an electron transporting layer, an electron injecting layer, and a second electrode, which are stacked over the first electrode, are included. The first composite layer and the second composite layer each include metal oxide and an organic compound. A concentration of metal oxide in the first composite layer is higher than a concentration of metal oxide in the second composite layer, whereby a light emitting element with a low driving voltage can be obtained. Further, the composite layer is not limited to a two-layer structure. A multi-layer structure can be employed. However, a concentration of metal oxide in the composite layer is gradually higher from the light emitting layer to first electrode side.

摘要翻译： 本发明的目的是提供一种具有低驱动电压的发光元件。 在发光元件中，第一电极; 并且包括层叠在第一电极上的第一复合层，第二复合层，发光层，电子传输层，电子注入层和第二电极。 第一复合层和第二复合层各自包括金属氧化物和有机化合物。 第一复合层中的金属氧化物的浓度高于第二复合层中的金属氧化物的浓度，由此可以获得具有低驱动电压的发光元件。 此外，复合层不限于两层结构。 可以采用多层结构。 然而，复合层中的金属氧化物的浓度从发光层逐渐变高到第一电极侧。

公开(公告)号：US08324620B2

公开(公告)日：2012-12-04

申请号：US12872823

申请日：2010-08-31

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Kosei Noda ,  Masayuki Sakakura ,  Yoshiaki Oikawa ,  Hotaka Maruyama

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Kosei Noda ,  Masayuki Sakakura ,  Yoshiaki Oikawa ,  Hotaka Maruyama

IPC分类号： H01L29/12 ,  H01L29/786

摘要： It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.