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    Method of fabricating an optoelectronic device having a bulk heterojunction
    91.
    发明授权
    Method of fabricating an optoelectronic device having a bulk heterojunction 有权
    制造具有体异质结的光电器件的方法

    公开(公告)号：US07435617B2

    公开(公告)日：2008-10-14

    申请号：US10999716

    申请日：2004-11-30

    申请人： Max Shtein ,  Fan Yang ,  Stephen R. Forrest

    发明人： Max Shtein ,  Fan Yang ,  Stephen R. Forrest

    IPC分类号： H01L51/40 ,  H01L35/24

    CPC分类号： B82Y30/00 ,  H01L51/0008 ,  H01L51/0053 ,  H01L51/0078 ,  H01L51/4213 ,  H01L51/4246 ,  H01L51/4253 ,  H01L2251/308 ,  Y02E10/549 ,  Y02P70/521

    摘要： A method of fabricating an optoelectronic device comprises: depositing a first layer having protrusions over a first electrode, in which the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer; in which the smallest lateral dimension of the protrusions are between 1 to 5 times the exciton diffusion length of the first organic small molecule material; and depositing a second electrode over the second layer to form the optoelectronic device. A method of fabricating an organic optoelectronic device having a bulk heterojunction is also provided and comprises: depositing a first layer with protrusions over an electrode by organic vapor phase deposition; depositing a second layer on the first layer where the interface of the first and second layers forms a bulk heterojunction; and depositing another electrode over the second layer.

    摘要翻译： 制造光电器件的方法包括：在第一电极上沉积具有突起的第一层，其中第一层包含第一有机小分子材料; 在所述第一层上沉积第二层，使得所述第二层与所述第一层物理接触; 其中突起的最小横向尺寸为第一有机小分子材料的激子扩散长度的1至5倍; 以及在所述第二层上沉积第二电极以形成所述光电器件。 还提供了制造具有体异质结的有机光电子器件的方法，其包括：通过有机气相沉积在电极上沉积具有突起的第一层; 在第一层上沉积第二层，其中第一和第二层的界面形成体异质结; 并在第二层上沉积另一电极。

    Method of fabricating an optoelectronic device having a bulk heterojunction
    92.
    发明授权
    Method of fabricating an optoelectronic device having a bulk heterojunction 有权
    制造具有体异质结的光电器件的方法

    公开(公告)号：US07419846B2

    公开(公告)日：2008-09-02

    申请号：US10824288

    申请日：2004-04-13

    申请人： Max Shtein ,  Fan Yang ,  Stephen R. Forrest

    发明人： Max Shtein ,  Fan Yang ,  Stephen R. Forrest

    IPC分类号： H01L51/48 ,  H01L51/42

    CPC分类号： B82Y30/00 ,  H01L51/0008 ,  H01L51/0053 ,  H01L51/0078 ,  H01L51/4213 ,  H01L51/4246 ,  H01L51/4253 ,  H01L2251/308 ,  Y02E10/549 ,  Y02P70/521

    摘要： A method of fabricating an organic optoelectronic device having a bulk heterojunction comprises the steps of: depositing a first layer over a first electrode by organic vapor phase deposition, wherein the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer, wherein the interface of the second layer on the first layer forms a bulk heterojunction; and depositing a second electrode over the second layer to form the optoelectronic device. In another embodiment, a first layer having protrusions is deposited over the first electrode, wherein the first layer comprises a first organic small molecule material. For example, when the first layer is an electron donor layer, the first electrode is an anode, the second layer is an electron acceptor layer, and the second electrode is a cathode. As a further example, when the first layer is an electron acceptor layer, the first electrode is a cathode, the second layer is an electron donor layer, and the second electrode is an anode.

    摘要翻译： 制造具有本体异质结的有机光电子器件的方法包括以下步骤：通过有机气相沉积在第一电极上沉积第一层，其中第一层包含第一有机小分子材料; 在所述第一层上沉积第二层使得所述第二层与所述第一层物理接触，其中所述第一层上的所述第二层的界面形成体异质结; 以及在所述第二层上沉积第二电极以形成所述光电器件。 在另一个实施例中，具有突起的第一层沉积在第一电极上，其中第一层包括第一有机小分子材料。 例如，当第一层是电子供体层时，第一电极是阳极，第二层是电子受体层，第二电极是阴极。 作为另一个例子，当第一层是电子受体层时，第一电极是阴极，第二层是电子供体层，第二电极是阳极。

    Twin waveguide based design for photonic integrated circuits
    93.
    发明授权
    Twin waveguide based design for photonic integrated circuits 有权
    基于双波导的光子集成电路设计

    公开(公告)号：US07302124B2

    公开(公告)日：2007-11-27

    申请号：US09982001

    申请日：2001-10-18

    申请人： Stephen R. Forrest ,  Milind Gokhale ,  Pavel Studenkov

    发明人： Stephen R. Forrest ,  Milind Gokhale ,  Pavel Studenkov

    IPC分类号： G02B6/36 ,  G02B6/12 ,  H01S5/00

    CPC分类号： G02B6/12004 ,  B82Y20/00 ,  G02B6/12021 ,  G02B6/2813 ,  G02B2006/12121 ,  G02B2006/12178 ,  G02B2006/12195 ,  H01S5/1014 ,  H01S5/1032 ,  H01S5/1064 ,  H01S5/3403 ,  H01S5/34306 ,  H01S5/50

    摘要： An asymmetric twin waveguide (ATG) structure is disclosed that significantly reduces the negative effects of inter-modal interference in symmetric twin-waveguide structures and which can be effectively used to implement a variety of optical devices. The ATG structure of the invention can be monolithically fabricated on a single epitaxial structure without the necessity of epitaxial re-growth. To achieve the ATG structure of the invention, the effective index of the passive waveguide in the ATG is varied from that of a symmetric twin waveguide such that one mode of the even and odd modes of propagation is primarily confined to the passive waveguide and the other to the active waveguide. The different effective indices of the two coupled waveguides result in the even and odd modes becoming highly asymmetric. As a result, the mode with the larger confinement factor in the active waveguide experiences higher gain and becomes dominant. In a further embodiment, the active waveguide is tapered to reduce coupling losses of the optical energy between the passive waveguide and the active waveguide. In a further embodiment, a grating region is incorporated atop the passive waveguide to select certain frequencies for transmission of light through the passive waveguide.

    摘要翻译： 公开了一种非对称双波导（ATG）结构，显着降低了对称双波导结构中模态间干扰的负面影响，可有效地用于实现各种光学器件。 本发明的ATG结构可以在单个外延结构上单片地制造，而不需要外延再生长。 为了实现本发明的ATG结构，ATG中的无源波导的有效指数与对称双波导的有效指数不同，使得偶数和奇数传播模式的一个模式主要限于无源波导和另一个 到有源波导。 两个耦合波导的不同有效指数导致均匀和奇数模式变得高度不对称。 结果，在有源波导中具有较大约束因子的模式经历较高的增益并成为主导的。 在另一个实施例中，有源波导是锥形的，以减少无源波导和有源波导之间的光能的耦合损耗。 在另一个实施例中，将光栅区域并入无源波导顶部，以选择某些频率以透射通过无源波导的光。

    Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier
    97.
    发明申请
    Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier 有权
    带有量子点的中频光敏器件嵌入能量栅栏屏障

    公开(公告)号：US20070151592A1

    公开(公告)日：2007-07-05

    申请号：US11598006

    申请日：2006-11-13

    申请人： Stephen R. Forrest ,  Guodan Wei

    发明人： Stephen R. Forrest ,  Guodan Wei

    IPC分类号： H02N6/00

    CPC分类号： H01L31/035236 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y20/00 ,  H01L31/09 ,  H01L31/18

    摘要： A plurality of layers of a first semiconductor material and a plurality of dots-in-a-fence barriers disposed in a stack between a first electrode and a second electrode. Each dots-in-a-fence barrier consists essentially of a plurality of quantum dots of a second semiconductor material embedded between and in direct contact with two layers of a third semiconductor material. Wave functions of the quantum dots overlap as at least one intermediate band. The layers of the third semiconductor material are arranged as tunneling barriers to require a first electron and/or a first hole in a layer of the first material to perform quantum mechanical tunneling to reach the second material within a respective quantum dot, and to require a second electron and/or a second hole in a layer of the first semiconductor material to perform quantum mechanical tunneling to reach another layer of the first semiconductor material.

    摘要翻译： 多层第一半导体材料和多个点阵栅栏栅栏布置在第一电极和第二电极之间的堆叠中。 每个栅栏围栏屏障基本上由第二半导体材料的多个量子点组成，该第二半导体材料嵌入在与第三半导体材料的两层直接接触之间。 量子点的波函数作为至少一个中间带重叠。 第三半导体材料的层被布置为隧道势垒，以在第一材料的层中需要第一电子和/或第一孔，以进行量子力学隧道以在相应量子点内到达第二材料，并且要​​求 在第一半导体材料的层中的第二电子和/或第二孔，以进行量子力学隧道以到达第一半导体材料的另一层。

    Grey scale bistable display
    98.
    发明授权
    Grey scale bistable display 有权
    灰度双稳态显示

    公开(公告)号：US07053412B2

    公开(公告)日：2006-05-30

    申请号：US10607138

    申请日：2003-06-27

    申请人： Michael Hack ,  Stephen R. Forrest ,  Jiangeng Xue

    发明人： Michael Hack ,  Stephen R. Forrest ,  Jiangeng Xue

    IPC分类号： H01L21/00

    CPC分类号： H01L27/3269 ,  G09G3/2014 ,  G09G3/2074 ,  G09G3/3258 ,  G09G3/3291 ,  G09G2300/0857 ,  G09G2320/0285 ,  G09G2320/043 ,  G09G2330/026 ,  G09G2360/148 ,  H01L27/3281

    摘要： A light emitting device capable of displaying grey scale is provided. The device has a pixel having a plurality of bistable subpixels. Each subpixel has an ON state and an OFF state. A different power line is coupled to each bistable subpixel. Circuitry that can individually modulate the pulse width of a power signal transmitted through each power line is connected to the power lines. Each subpixel includes a first light emitting device the emits light when the subpixel is in the ON state. Each subpixel has substantially the same size and emits substantially the same spectrum of light in the ON state.

    摘要翻译： 提供能够显示灰度级的发光装置。 该装置具有具有多个双稳态子像素的像素。 每个子像素具有ON状态和OFF状态。 不同的电源线耦合到每个双稳态子像素。 可以单独调制通过每条电力线传输的电力信号的脉冲宽度的电路连接到电力线。 每个子像素包括当子像素处于ON状态时发光的第一发光器件。 每个子像素具有基本上相同的尺寸并且在ON状态下发射基本上相同的光谱。

    Twin waveguide based design for photonic integrated circuits
    100.
    发明授权
    Twin waveguide based design for photonic integrated circuits 失效

    公开(公告)号：US06819814B2

    公开(公告)日：2004-11-16

    申请号：US10642316

    申请日：2003-08-15

    申请人： Stephen R. Forrest ,  Milind Gokhale ,  Pavel Studenkov

    发明人： Stephen R. Forrest ,  Milind Gokhale ,  Pavel Studenkov

    IPC分类号： G02B612

    CPC分类号： G02B6/12004 ,  B82Y20/00 ,  G02B6/12021 ,  G02B6/2813 ,  G02B2006/12121 ,  G02B2006/12178 ,  G02B2006/12195 ,  H01S5/1014 ,  H01S5/1032 ,  H01S5/1064 ,  H01S5/3403 ,  H01S5/34306 ,  H01S5/50

    摘要： An asymmetric twin waveguide (ATG) structure is disclosed that significantly reduces the negative effects of inter-modal interference in symmetric twin-waveguide structures and which can be effectively used to implement a variety of optical devices. The ATG structure of the invention can be monolithically fabricated on a single epitaxial structure without the necessity of epitaxial re-growth. To achieve the ATG structure of the invention, the effective index of the passive waveguide in the ATG is varied from that of a symmetric twin waveguide such that one mode of the even and odd modes of propagation is primarily confined to the passive waveguide and the other to the active waveguide. The different effective indices of the two coupled waveguides result in the even and odd modes becoming highly asymmetric. As a result, the mode with the larger confinement factor in the active waveguide experiences higher gain and becomes dominant. In a further embodiment, the active waveguide is tapered to reduce coupling losses of the optical energy between the passive waveguide and the active waveguide. In a further embodiment, a grating region is incorporated atop the passive waveguide to select certain frequencies for transmission of light through the passive waveguide.