公开(公告)号：US20130316538A1

公开(公告)日：2013-11-28

申请号：US13478749

申请日：2012-05-23

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Augustin J. Hong ,  Ning Li ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Davood Shahrjerdi ,  Kuen-Ting Shiu

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Augustin J. Hong ,  Ning Li ,  Devendra K. Sadana ,  Katherine L. Saenger ,  Davood Shahrjerdi ,  Kuen-Ting Shiu

IPC分类号： H01L21/304 ,  H01L21/306

CPC分类号： H01L21/304 ,  H01L31/02363 ,  Y02E10/50

摘要： The generation of surface patterns or the replication of surface patterns is achieved in the present disclosure without the need to employ an etching process. Instead, a unique fracture mode referred to as spalling is used in the present disclosure to generate or replicate surface patterns. In the case of surface pattern generation, a surface pattern is provided in a stressor layer and then spalling is performed. In the case of surface pattern replication, a surface pattern is formed within or on a surface of a base substrate, and then a stressor layer is applied. After applying the stressor layer, spalling is performed. Generation or replication of surface patterns utilizing spalling provides a low cost means for generation or replication of surface patterns.

摘要翻译： 在本公开中实现表面图案的产生或表面图案的复制，而不需要采用蚀刻工艺。 相反，在本公开中使用称为剥落的独特的断裂模式来生成或复制表面图案。 在表面图案生成的情况下，在应力层中设置表面图案，然后进行剥离。 在表面图案复制的情况下，在基底表面上或表面上形成表面图案，然后施加应力层。 施加应力层后，进行剥落。 利用剥落产生或复制表面图案为生成或复制表面图案提供了低成本的手段。

公开(公告)号：US20130316488A1

公开(公告)日：2013-11-28

申请号：US13481795

申请日：2012-05-26

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoartabari ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoartabari ,  Paul A. Lauro ,  Ning Li ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/02 ,  H01L21/302 ,  H01L21/762

CPC分类号： H01L31/0684 ,  H01L21/02002 ,  H01L31/1896 ,  Y02E10/547

摘要： A stressor layer used in a controlled spalling method is removed through the use of a cleave layer that can be fractured or dissolved. The cleave layer is formed between a host semiconductor substrate and the metal stressor layer. A controlled spalling process separates a relatively thin residual host substrate layer from the host substrate. Following attachment of a handle substrate to the residual substrate layer or other layers subsequently formed thereon, the cleave layer is dissolved or otherwise compromised to facilitate removal of the stressor layer. Such removal allows the fabrication of a bifacial solar cell.

摘要翻译： 以受控剥落方式使用的应力层通过使用可以断裂或溶解的裂开层去除。 在主体半导体衬底和金属应力层之间形成切割层。 受控的剥落过程将相对薄的残余主体衬底层与主体衬底分离。 在将手柄衬底附接到残留衬底层或随后在其上形成的其它层之后，解理层被溶解或以其他方式受到损害以便于去除应力层。 这种去除允许制造双面太阳能电池。

公开(公告)号：US20130269860A1

公开(公告)日：2013-10-17

申请号：US13448939

申请日：2012-04-17

申请人： Maha M. Khayyat ,  Norma E. Sosa Cortes ,  Stephen W. Bedell ,  Keith E. Fogel ,  Devendra K. Sadana

发明人： Maha M. Khayyat ,  Norma E. Sosa Cortes ,  Stephen W. Bedell ,  Keith E. Fogel ,  Devendra K. Sadana

IPC分类号： B32B38/00 ,  B05D3/02

CPC分类号： B32B38/10 ,  B32B2457/14 ,  H01L21/02002 ,  H01L21/304 ,  H01L21/6836 ,  H01L31/1892 ,  Y02E10/50

摘要： A stressor layer is formed atop a base substrate at a first temperature which induces a first tensile stress in the base substrate that is below a fracture toughness of base substrate. The base substrate and the stressor layer are then brought to a second temperature which is less than the first temperature. The second temperature induces a second tensile stress in the stressor layer which is greater than the first tensile stress and which is sufficient to allow for spalling mode fracture to occur within the base substrate. The base substrate is spalled at the second temperature to form a spalled material layer. Spalling occurs at a fracture depth which is dependent upon the fracture toughness of the base substrate, stress level within the base substrate, and the second tensile stress of the stressor layer induced at the second temperature.

摘要翻译： 在第一温度下在基底顶部形成应力层，该第一温度在基础基板中引起低于基底基板的断裂韧性的第一拉伸应力。 然后使基底和应力层达到小于第一温度的第二温度。 第二温度在应力层中引起第二拉伸应力，其大于第一拉伸应力，并且其足以允许在基底基底内发生剥落模式断裂。 基底基板在第二温度下剥离以形成剥离的材料层。 剥离发生在取决于基底的断裂韧性，基底衬底内的应力水平以及在第二温度下引起的应力层的第二拉伸应力的断裂深度。

公开(公告)号：US20130242627A1

公开(公告)日：2013-09-19

申请号：US13418921

申请日：2012-03-13

申请人： Stephen W. Bedell ,  Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Bahman Hekmatshoartabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H02M7/06 ,  G06F17/50

CPC分类号： H02M7/106 ,  H01L21/304 ,  H01L21/6835 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/42316 ,  H01L29/7786 ,  H01L29/872 ,  H01L2221/6835 ,  H01L2221/68368 ,  Y02B70/1483

摘要： High voltage diode-connected gallium nitride high electron mobility transistor structures or Schottky diodes are employed in a network including high-k dielectric capacitors in a solid state, monolithic voltage multiplier. A superjunction formed by vertical p/n junctions in gallium nitride facilitates operation of the high electron mobility transistor structures and Schottky diodes. A design structure for designing, testing or manufacturing an integrated circuit is tangibly embodied in a machine-readable medium and includes elements of a solid state voltage multiplier.

摘要翻译： 高压二极管连接的氮化镓高电子迁移率晶体管结构或肖特基二极管用于包括固态高分子电压倍增器的高k介质电容器的网络中。 由氮化镓中的垂直p / n结形成的超结，有利于高电子迁移率晶体管结构和肖特基二极管的工作。 用于设计，测试或制造集成电路的设计结构被有形地体现在机器可读介质中并且包括固态电压倍增器的元件。

公开(公告)号：US08476152B2

公开(公告)日：2013-07-02

申请号：US13436850

申请日：2012-03-31

申请人： Jee Hwan Kim ,  Stephen W. Bedell ,  Siegfried Maurer ,  Devendra K. Sadana

发明人： Jee Hwan Kim ,  Stephen W. Bedell ,  Siegfried Maurer ,  Devendra K. Sadana

IPC分类号： H01L21/265

CPC分类号： H01L21/26513 ,  H01L29/165 ,  H01L29/167 ,  H01L29/66636 ,  Y10S438/919

摘要： A method includes epitaxially growing a germanium (Ge) layer onto a Ge substrate and incorporating a compensating species with a compensating atomic radius into the Ge layer. The method includes implanting an n-type dopant species with a dopant atomic radius into the Ge layer. The method includes selecting the n-type dopant species and the compensating species in such manner that the size of the Ge atomic radius is inbetween the n-type dopant atomic radius and the compensating atomic radius.

摘要翻译： 一种方法包括将锗（Ge）层外延生长到Ge衬底上并将具有补偿原子半径的补偿物质结合到Ge层中。 该方法包括将具有掺杂剂原子半径的n型掺杂物种类植入到Ge层中。 该方法包括选择n型掺杂剂物质和补偿物质，使得Ge原子半径的大小在n型掺杂剂原子半径和补偿原子半径之间。

公开(公告)号：US20130095598A1

公开(公告)日：2013-04-18

申请号：US13602122

申请日：2012-09-01

申请人： Stephen W. Bedell ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/18

CPC分类号： H01L31/0725 ,  H01L31/0693 ,  H01L31/1808 ,  Y02E10/544 ,  Y02P70/521

摘要： A multi-junction III-V photovoltaic device is provided that includes at least one top cell comprised of at least one III-V compound semiconductor material; and a bottom cell in contact with a surface of the at least one top cell. The bottom cell includes a germanium-containing layer in contact with the at least one top cell, at least one intrinsic hydrogenated silicon-containing layer in contact with a surface of the germanium-containing layer, and at least one doped hydrogenated silicon-containing layer in contact with a surface of the at least one intrinsic hydrogenated silicon-containing layer. The intrinsic and doped silicon-containing layers can be amorphous, nano/micro-crystalline, poly-crystalline or single-crystalline.

公开(公告)号：US20130025659A1

公开(公告)日：2013-01-31

申请号：US13612632

申请日：2012-09-12

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC分类号： H01L31/0725

CPC分类号： H01L31/1892 ,  H01L31/02167 ,  H01L31/0687 ,  H01L31/0725 ,  H01L31/0747 ,  H01L31/076 ,  H01L31/1808 ,  H01L31/1812 ,  Y02E10/544 ,  Y02E10/548 ,  Y02P70/521

摘要： A method of forming a photovoltaic device that includes bonding a substrate to a germanium-containing semiconductor layer with a stressor layer, wherein the stressor layer cleaves the germanium-containing semiconductor layer. At least one semiconductor layer is formed on a cleaved surface of the germanium-containing semiconductor layer that is opposite the conductivity type of the germanium-containing semiconductor layer to provide a first solar cell. The first solar cell absorbs a first range of wavelengths. At least one second solar cell may be formed on the first solar cell, wherein the at least one second solar cell is composed of at least one semiconductor material to absorb a second range of wavelengths that is different than the first range wavelengths absorbed by the first solar cell.

公开(公告)号：US20120322227A1

公开(公告)日：2012-12-20

申请号：US13159893

申请日：2011-06-14

申请人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Devendra K. Sadana

发明人： Stephen W. Bedell ,  Keith E. Fogel ,  Paul A. Lauro ,  Devendra K. Sadana

IPC分类号： H01L21/30

CPC分类号： H01L21/304 ,  H01L31/1896 ,  Y02E10/50 ,  Y02P80/30

摘要： A method of controlled layer transfer is provided. The method includes providing a stressor layer to a base substrate. The stressor layer has a stressor layer portion located atop an upper surface of the base substrate and a self-pinning stressor layer portion located adjacent each sidewall edge of the base substrate. A spalling inhibitor is then applied atop the stressor layer portion of the base substrate, and thereafter the self-pinning stressor layer portion of the stressor layer is decoupled from the stressor layer portion. A portion of the base substrate that is located beneath the stressor layer portion is then spalled from the original base substrate. The spalling includes displacing the spalling inhibitor from atop the stressor layer portion. After spalling, the stressor layer portion is removed from atop a spalled portion of the base substrate.

摘要翻译： 提供了一种受控层转移的方法。 该方法包括向基底基底提供应力层。 应力层具有位于基底基板的上表面顶部的应力层，以及位于基底基板的每个侧壁边缘附近的自锁紧应力层。 然后将剥落抑制剂施加在基底衬底的应力层部分的顶部，然后将应力层的自锁定应力层部分与应力层部分分离。 位于应力层部分之下的基底部分的一部分然后从原始基底剥离。 剥落包括从应力层部分顶部置换剥落抑制剂。 剥落后，从基底基板的剥离部的顶部除去应力层。

公开(公告)号：US20120190161A1

公开(公告)日：2012-07-26

申请号：US13437036

申请日：2012-04-02

申请人： Jee Hwan Kim ,  Stephen W. Bedell ,  Siegfried Maurer ,  Devendra K. Sadana

发明人： Jee Hwan Kim ,  Stephen W. Bedell ,  Siegfried Maurer ,  Devendra K. Sadana

IPC分类号： H01L21/336

CPC分类号： H01L21/26513 ,  H01L29/165 ,  H01L29/167 ,  H01L29/66636 ,  Y10S438/919

摘要： A field effect transistor (FET) has a channel hosted in Ge. The FET has silicon-germanium (SiGe) source and drain formed by selective epitaxy. The SiGe source and drain exert a tensile stress onto the Ge channel. During forming of the SiGe source and drain, an n-type dopant species and a compensating species are being incorporated into the SiGe source and drain. The n-type dopant species and the compensating species are so selected that the size of the SiGe atomic radius is inbetween the dopant atomic radius and the compensating species atomic radius.

摘要翻译： 场效应晶体管（FET）具有在Ge中托管的通道。 FET通过选择性外延形成硅 - 锗（SiGe）源极和漏极。 SiGe源极和漏极在Ge沟道上施加拉伸应力。 在形成SiGe源极和漏极期间，n型掺杂物质和补偿物质被并入到SiGe源极和漏极中。 选择n型掺杂物种类和补偿种类，使得SiGe原子半径的尺寸在掺杂剂原子半径和补偿物质原子半径之间。

公开(公告)号：US08169025B2

公开(公告)日：2012-05-01

申请号：US12689339

申请日：2010-01-19

申请人： Stephen W. Bedell ,  Kangguo Cheng ,  Bruce B. Doris ,  Ali Khakifirooz ,  Devendra K. Sadana ,  Ghavam G. Shahidi

发明人： Stephen W. Bedell ,  Kangguo Cheng ,  Bruce B. Doris ,  Ali Khakifirooz ,  Devendra K. Sadana ,  Ghavam G. Shahidi

IPC分类号： H01L27/12

CPC分类号： H01L21/845 ,  H01L27/1211 ,  H01L29/7849

摘要： A semiconductor device and fabrication method include a strained semiconductor layer having a strain in one axis. A long fin and a short fin are formed in the semiconductor layer such that the long fin has a strained length along the one axis. An n-type transistor is formed on the long fin, and a p-type transistor is formed on the at least one short fin. The strain in the n-type transistor improves performance.

摘要翻译： 半导体器件和制造方法包括在一个轴上具有应变的应变半导体层。 在半导体层中形成长鳍片和短鳍片，使得长鳍片沿着一个轴线具有应变长度。 在长鳍片上形成n型晶体管，在该至少一个短鳍片上形成p型晶体管。 n型晶体管中的应变提高了性能。