Long-range lithographic dose correction
    91.
    发明授权
    Long-range lithographic dose correction 有权
    长程光刻剂量校正

    公开(公告)号:US08984452B2

    公开(公告)日:2015-03-17

    申请号:US13966013

    申请日:2013-08-13

    IPC分类号: G06F17/50

    CPC分类号: G03F7/70558 G03F7/70616

    摘要: A method of quantifying a lithographic proximity effect and determining a lithographic exposure dosage is disclosed. In an exemplary embodiment, the method for determining an exposure dosage comprises receiving a design database including a plurality of features intended to be formed on a workpiece. A target region of the design database is defined such that the target region includes a target feature. A region of the design database proximate to the target region is also defined. An approximation for the region is determined, where the approximation represents an exposed area within the region. A proximity effect of the region upon the target feature is determined based on the approximation for the region. A total proximity effect for the target feature is determined based on the determined proximity effect of the region upon the target feature.

    摘要翻译: 公开了一种量化光刻邻近效应并确定光刻曝光剂量的方法。 在示例性实施例中,用于确定曝光剂量的方法包括接收包括旨在形成在工件上的多个特征的设计数据库。 定义设计数据库的目标区域,使得目标区域包括目标特征。 也定义了靠近目标区域的设计数据库的区域。 确定该区域的近似值,其中近似表示区域内的暴露区域。 基于该区域的近似来确定区域对目标特征的邻近效应。 基于所确定的区域对目标特征的邻近效应来确定目标特征的总接近效应。