公开(公告)号：US07663195B2

公开(公告)日：2010-02-16

申请号：US11285772

申请日：2005-11-22

申请人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Hiroshi Akahori ,  Keiichi Nii ,  Takanori Watanabe

发明人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Hiroshi Akahori ,  Keiichi Nii ,  Takanori Watanabe

IPC分类号： H01L29/76

CPC分类号： H01L29/7813 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L29/045 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66734

摘要： In a P-channel power MIS field effect transistor formed on a silicon surface having substantially a (110) plane, a gate insulation film is used which provides a gate-to-source breakdown voltage of 10 V or more, and planarizes the silicon surface, or contains Kr, Ar, or Xe.

摘要翻译： 在形成在具有（110）面的硅表面上的P沟道功率MIS场效应晶体管中，使用提供10V以上的栅极 - 源极击穿电压的栅极绝缘膜，并平坦化硅表面 ，或含有Kr，Ar或Xe。

公开(公告)号：US20100000769A1

公开(公告)日：2010-01-07

申请号：US12449019

申请日：2008-01-22

申请人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Masayuki Ishizuka ,  Nobuhiro Hidaka ,  Yasushi Shirakata

发明人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Masayuki Ishizuka ,  Nobuhiro Hidaka ,  Yasushi Shirakata

IPC分类号： H01F1/01 ,  H01F1/04 ,  B05D5/12 ,  H05K1/03

CPC分类号： H01F41/0246 ,  H01F1/26 ,  H01F1/37 ,  H05K1/0233

摘要： There are provided a composite magnetic body exhibiting a sufficiently low magnetic loss at frequencies of several hundreds of megahertz to several gigahertz, and a method of manufacturing the same. The composite magnetic body contains a magnetic powder dispersed in an insulating material. The magnetic powder is in a spherical shape or an elliptic shape. The composite magnetic body has any one of the following characteristics (a) to (c): (a) the relative magnetic permeability μr is larger than 1 and the loss tangent tan δ is 0.1 or less, at a frequency of 1 GHz or 500 MHz; (b) the real part μr′ of the complex permeability is more than 10 and the loss tangent tan δ is 0.3 or less, at a frequency of 1.2 GHz or less; and (c) the real part μr′ of the complex permeability is more than 1 at a frequency of 4 GHz or less, and the loss tangent tan δ is 0.1 or less at a frequency of 1 GHz or less.

摘要翻译： 提供了一种在数百兆赫兹到几千兆赫的频率下具有足够低的磁损耗的复合磁体及其制造方法。 复合磁体包含分散在绝缘材料中的磁粉。 磁粉为球形或椭圆形。 复合磁体具有以下特征（a）〜（c）中的任一个：（a）相对磁导率μm大于1，损耗角正切tanδ为0.1以下，频率为1GHz或500 MHz; （b）在1.2GHz或更小的频率下，复合磁导率的实部部分大于10，损耗角正切tanδ为0.3或更小; 和（c）在4GHz或更小的频率下，复合磁导率的实部mur'大于1，而在1GHz或更小的频率下，损耗角正切tanδ为0.1或更小。

公开(公告)号：US20090321832A1

公开(公告)日：2009-12-31

申请号：US11922197

申请日：2006-06-16

申请人： Tadahiro Ohmi ,  Akinobu Teramoto

发明人： Tadahiro Ohmi ,  Akinobu Teramoto

IPC分类号： H01L27/12

CPC分类号： H01L27/1203 ,  H01L29/045

摘要： A semiconductor device according to this invention is provided with a MOS transistor of at least one type, wherein the MOS transistor has a semiconductor layer (SOI layer) provided on an SOI substrate and a gate electrode provided on the SOI layer and is normally off by setting the thickness of the SOI layer so that the thickness of a depletion layer caused by a work function difference between the gate electrode and the SOI layer becomes greater than that of the SOI layer.

摘要翻译： 根据本发明的半导体器件设置有至少一种类型的MOS晶体管，其中MOS晶体管具有设置在SOI衬底上的半导体层（SOI层）和设置在SOI层上的栅电极，并且通常由 设置SOI层的厚度，使得由栅电极和SOI层之间的功函数差引起的耗尽层的厚度变得大于SOI层的厚度。

公开(公告)号：US20090309138A1

公开(公告)日：2009-12-17

申请号：US12309244

申请日：2007-07-12

申请人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Rihito Kuroda

发明人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Rihito Kuroda

IPC分类号： H01L29/786 ,  H01L29/04

CPC分类号： H01L27/1203 ,  H01L21/28202 ,  H01L29/518 ,  H01L29/78654 ,  H01L29/78696

摘要： An accumulation mode transistor has an impurity concentration of a semiconductor layer in a channel region at a value higher than 2×1017 cm−3 to achieve a large gate voltage swing.

摘要翻译： 累积模式晶体管的沟道区中的半导体层的杂质浓度高于2×10 17 cm -3，以实现大的栅极电压摆动。

公开(公告)号：US20090263566A1

公开(公告)日：2009-10-22

申请号：US11992225

申请日：2005-09-21

申请人： Tadahiro Ohmi ,  Akinobu Teramoto

发明人： Tadahiro Ohmi ,  Akinobu Teramoto

IPC分类号： B05D5/12 ,  C23C14/00 ,  B05D5/06

CPC分类号： C23C14/12 ,  C23C14/24 ,  C23C14/564

摘要： In a deposited thin film for use in a semiconductor device or the like for which a high integration degree and ultrafine machining are required, adsorption of contaminant, and particularly, of organic substances on the deposited thin film has become a problem. A phenomenon has been found out that, in a case where a gas pressure in a chamber is maintained in a viscous flow region, the adsorption of the organic substances is significantly decreased as compared with a case where the gas pressure is maintained in a molecular flow region. Based on this phenomenon, the gas pressure is controlled so that the gas pressure can be set in the molecular flow region at a time of forming the deposited thin film and so that the gas pressure can be set in the viscous flow region while such deposition is not being performed, thus making it possible to form the deposited thin film with less contamination from the organic substances.

摘要翻译： 在用于需要高集成度和超细加工的半导体器件等中的沉积薄膜中，污染物特别是有机物质在沉积的薄膜上的吸附已经成为问题。 已经发现，在室内的气体压力保持在粘性流动区域的情况下，与将气体压力保持在分子流中的情况相比，有机物质的吸附显着降低的现象 地区。 基于该现象，控制气体压力，使得在形成沉积的薄膜时可以在分子流动区域中设定气体压力，并且可以将气体压力设定在粘性流动区域中，同时沉积 不能进行，从而可以形成具有较少的有机物污染的沉积薄膜。

公开(公告)号：US20090107521A1

公开(公告)日：2009-04-30

申请号：US12296989

申请日：2007-04-11

申请人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Jiro Yamanaka ,  Nobutaka Mizutani ,  Osamu Nakamura ,  Takaaki Matsuoka ,  Ryoichi Ohkura

发明人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Jiro Yamanaka ,  Nobutaka Mizutani ,  Osamu Nakamura ,  Takaaki Matsuoka ,  Ryoichi Ohkura

IPC分类号： B08B3/00 ,  F16L11/04 ,  F16L11/20

CPC分类号： H01L21/67051 ,  H01L21/6708

摘要： By adding a perfluoromonomer to PVDF being a fluororesin to soften it, the oxygen permeability can be significantly reduced and a flexible fluororesin tube can be obtained. The oxygen permeability can also be reduced by providing a nylon tube as an outer layer. The tube is used between a chemical solution or ultrapure water feeder and a chemical solution or ultrapure water utilizing apparatus such as a cleaning apparatus or a wet etching apparatus.

摘要翻译： 通过向作为氟树脂的PVDF添加全氟单体使其软化，可以显着降低透氧性，并且可以获得柔性的氟树脂管。 也可以通过提供尼龙管作为外层来降低透氧性。 该管用于化学溶液或超纯水给水器和化学溶液或超纯水利用设备如清洁设备或湿蚀刻设备。

公开(公告)号：US20090072327A1

公开(公告)日：2009-03-19

申请号：US11576499

申请日：2005-09-30

申请人： Junichi Kitagawa ,  Shigenori Ozaki ,  Akinobu Teramoto ,  Tadahiro Ohmi

发明人： Junichi Kitagawa ,  Shigenori Ozaki ,  Akinobu Teramoto ,  Tadahiro Ohmi

IPC分类号： H01L29/78 ,  H01L21/314 ,  C23C16/54

CPC分类号： H01L29/792 ,  H01L21/28202 ,  H01L21/28273 ,  H01L29/513

摘要： [Problems] To provide a semiconductor storage device with excellent electrical characteristics (write/erase characteristics) by means of favorable nitrogen concentration profile of a gate insulating film, and to provide a method for manufacturing such a device.[Means for Solving Problems] a semiconductor device fabricating method according to a first aspect of the invention, a method for fabricating a semiconductor storage device that operates by transferring charges through a gate insulating film formed between a semiconductor substrate and a gate electrode, includes a step for introducing an oxynitriding species previously diluted by plasma excitation gas, into a plasma processing apparatus, generating an oxynitriding species by means of a plasma, and forming an oxynitride film on the semiconductor substrate as the gate insulating film. The oxynitriding species contains NO gas at a ratio of 0.00001 to 0.01% to the total volume of gas introduced into the plasma processing apparatus.

摘要翻译： [问题]通过栅极绝缘膜的有利的氮浓度分布，提供具有优异的电特性（写/擦除特性）的半导体存储装置，并提供制造这种器件的方法。 解决问题的手段根据本发明的第一方面的半导体器件制造方法，一种制造半导体存储器件的方法，所述半导体存储器件通过在半导体衬底和栅电极之间形成的栅极绝缘膜转移电荷而工作，包括： 将先前由等离子体激发气体稀释的氮氧化物质引入等离子体处理装置，通过等离子体产生氮氧化物质，并在半导体衬底上形成氧氮化物膜作为栅极绝缘膜的步骤。 氮氧化物质相对于引入等离子体处理装置的气体的总体积含有0.00001〜0.01％的NO气体。

公开(公告)号：US20090050895A1

公开(公告)日：2009-02-26

申请号：US12195508

申请日：2008-08-21

申请人： Akihiko Hiroe ,  Akinobu Teramoto ,  Tadahiro Ohmi

发明人： Akihiko Hiroe ,  Akinobu Teramoto ,  Tadahiro Ohmi

IPC分类号： H01L29/04 ,  H01L21/336 ,  H01L21/67

CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L27/1229 ,  H01L29/66757 ,  H01L29/78618

摘要： In a semiconductor manufacturing method that manufactures a coplanar type thin film transistor, a microcrystalline film 10 that will become a channel region is formed on a glass substrate S, a sacrificial silicon oxide 20 film is formed on the microcrystalline film 10, and, in a state in which a surface boundary of the microcrystalline film 10 is protected by the sacrificial silicon oxide film 20, a doped silicon film 30 is built up that will become a source region and a drain region. A photoresist R film is applied on the doped silicon film 30 and planarized. With the sacrificial silicon oxide film 20 in an uncovered state, etching is performed until the microcrystalline film 10 and the doped silicon film 30 reside in approximately the same plane.

摘要翻译： 在制造共面型薄膜晶体管的半导体制造方法中，在玻璃基板S上形成成为沟道区的微晶膜10，在微晶膜10上形成牺牲氧化硅20膜，在 由牺牲氧化硅膜20保护微晶膜10的表面边界的状态，构成将成为源极区域和漏极区域的掺杂硅膜30。 将光致抗蚀剂R膜施加在掺杂硅膜30上并平坦化。 在牺牲氧化硅膜20处于未覆盖状态下，进行蚀刻直到微晶膜10和掺杂硅膜30位于大致相同的平面中。

公开(公告)号：US07449719B2

公开(公告)日：2008-11-11

申请号：US10558760

申请日：2004-05-31

申请人： Tadahiro Ohmi ,  Akinobu Teramoto

发明人： Tadahiro Ohmi ,  Akinobu Teramoto

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/036

CPC分类号： H01L21/82385 ,  H01L21/28167 ,  H01L21/823857 ,  H01L29/66787 ,  H01L29/785

摘要： A gate insulating film is formed using a plasma on a three-dimensional silicon substrate surface having a plurality of crystal orientations. The plasma gate insulating film experiences no increase in interface state in any crystal orientations and has a uniform thickness even at corner portions of the three-dimensional structure. By forming a high-quality gate insulating film using a plasma, there can be obtained a semiconductor device having good characteristics.

摘要翻译： 在具有多个晶体取向的三维硅衬底表面上使用等离子体形成栅极绝缘膜。 等离子体栅极绝缘膜在任何晶体取向中不会增加界面态，并且即使在三维结构的拐角部分也具有均匀的厚度。 通过使用等离子体形成高品质的栅极绝缘膜，可以获得具有良好特性的半导体器件。

公开(公告)号：US20080204050A1

公开(公告)日：2008-08-28

申请号：US11795247

申请日：2006-01-17

申请人： Tadahiro Ohmi ,  Akinobu Teramoto

发明人： Tadahiro Ohmi ,  Akinobu Teramoto

IPC分类号： G01R27/26

CPC分类号： G01R31/2621 ,  G01R27/2605

摘要： In a method for measuring an electronic device which is an object to be measured, a passive element is connected to the electronic device in parallel, and electric parameters of the electronic device are extracted by measuring an impedance of the entire circuit.

摘要翻译： 在作为测量对象的电子设备的测量方法中，无源元件并联连接到电子设备，并且通过测量整个电路的阻抗来提取电子设备的电参数。