利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

900 条记录 (耗时 0.033 秒)

    COMPOSITE MATERIAL AND MANUFACTURING METHOD THEREOF
    1.
    发明申请
    COMPOSITE MATERIAL AND MANUFACTURING METHOD THEREOF 审中-公开
    复合材料及其制造方法

    公开(公告)号：US20110017501A1

    公开(公告)日：2011-01-27

    申请号：US12935662

    申请日：2009-03-26

    申请人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Masayuki Ishizuka ,  Nobuhiro Hidaka ,  Yasushi Shirakata

    发明人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Masayuki Ishizuka ,  Nobuhiro Hidaka ,  Yasushi Shirakata

    IPC分类号： H05K1/00 ,  B32B5/16 ,  B32B5/00 ,  B05D7/00 ,  B05D3/12

    CPC分类号： H05K1/0373 ,  B22F1/02 ,  B22F2998/00 ,  C22C2202/02 ,  H01F1/24 ,  H01F1/26 ,  H01F1/37 ,  H05K1/0233 ,  H05K1/024 ,  H05K2201/0209 ,  H05K2201/0215 ,  H05K2201/0224 ,  H05K2201/0245 ,  H05K2201/086 ,  Y10T428/24 ,  Y10T428/25 ,  Y10T428/256 ,  Y10T428/257 ,  Y10T428/258 ,  B22F3/16

    摘要： This invention provides a composite material useful for size reduction of electronic components and circuit boards mounted on electronic equipment and exhibiting a low magnetic loss (tan δ), and a manufacturing method thereof. The composite material contains an insulating material and particulates dispersed in this insulating material, the particulates being previously coated with an insulating material having substantially the same composition as that of the coating insulating material. The particulates consist of an organic or inorganic substance and preferably have a flat shape. The insulating material may be an insulating material commonly used in the field of electronic components. The composite material of the invention is preferably manufactured by a manufacturing method in which the particulates are previously coated with an insulating material and dispersed in an insulating material having substantially the same composition as that of the coating insulating material. The composite material of the invention can be applied as a material for circuit boards and/or electronic components to realize further reduction in size and power consumption of information and telecommunication equipment in a frequency band of several hundred MHz to 1 GHz.

    摘要翻译： 本发明提供一种复合材料及其制造方法，该复合材料可用于安装在电子设备上的电子部件和电路板的尺寸减小并且具有低的磁损耗（tanδ）。 复合材料包含绝缘材料和分散在该绝缘材料中的微粒，预先用绝缘材料涂覆颗粒，该绝缘材料具有与涂层绝缘材料基本相同的组成。 微粒由有机或无机物构成，优选具有平坦的形状。 绝缘材料可以是电子部件领域中常用的绝缘材料。 本发明的复合材料优选通过制造方法制造，其中颗粒预先用绝缘材料涂覆并分散在具有与涂层绝缘材料基本相同的组成的绝缘材料中。 本发明的复合材料可以用作电路板和/或电子部件的材料，以实现在数百MHz至1GHz的频带内的信息和电信设备的尺寸和功耗的进一步减小。

    COMPOSITE MAGNETIC BODY, METHOD OF MANUFACTURING THE SAME, CIRCUIT BOARD USING THE SAME, AND ELECTRONIC APPARATUS USING THE SAME
    2.
    发明申请
    COMPOSITE MAGNETIC BODY, METHOD OF MANUFACTURING THE SAME, CIRCUIT BOARD USING THE SAME, AND ELECTRONIC APPARATUS USING THE SAME 审中-公开
    复合磁性体，其制造方法，使用该组合物的电路板和使用其的电子装置

    公开(公告)号：US20100000769A1

    公开(公告)日：2010-01-07

    申请号：US12449019

    申请日：2008-01-22

    申请人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Masayuki Ishizuka ,  Nobuhiro Hidaka ,  Yasushi Shirakata

    发明人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Masayuki Ishizuka ,  Nobuhiro Hidaka ,  Yasushi Shirakata

    IPC分类号： H01F1/01 ,  H01F1/04 ,  B05D5/12 ,  H05K1/03

    CPC分类号： H01F41/0246 ,  H01F1/26 ,  H01F1/37 ,  H05K1/0233

    摘要： There are provided a composite magnetic body exhibiting a sufficiently low magnetic loss at frequencies of several hundreds of megahertz to several gigahertz, and a method of manufacturing the same. The composite magnetic body contains a magnetic powder dispersed in an insulating material. The magnetic powder is in a spherical shape or an elliptic shape. The composite magnetic body has any one of the following characteristics (a) to (c): (a) the relative magnetic permeability μr is larger than 1 and the loss tangent tan δ is 0.1 or less, at a frequency of 1 GHz or 500 MHz; (b) the real part μr′ of the complex permeability is more than 10 and the loss tangent tan δ is 0.3 or less, at a frequency of 1.2 GHz or less; and (c) the real part μr′ of the complex permeability is more than 1 at a frequency of 4 GHz or less, and the loss tangent tan δ is 0.1 or less at a frequency of 1 GHz or less.

    摘要翻译： 提供了一种在数百兆赫兹到几千兆赫的频率下具有足够低的磁损耗的复合磁体及其制造方法。 复合磁体包含分散在绝缘材料中的磁粉。 磁粉为球形或椭圆形。 复合磁体具有以下特征（a）〜（c）中的任一个：（a）相对磁导率μm大于1，损耗角正切tanδ为0.1以下，频率为1GHz或500 MHz; （b）在1.2GHz或更小的频率下，复合磁导率的实部部分大于10，损耗角正切tanδ为0.3或更小; 和（c）在4GHz或更小的频率下，复合磁导率的实部mur'大于1，而在1GHz或更小的频率下，损耗角正切tanδ为0.1或更小。

    METHOD OF PRODUCING SEMICONDUCTOR TRANSISTOR
    6.
    发明申请
    METHOD OF PRODUCING SEMICONDUCTOR TRANSISTOR 有权
    生产半导体晶体管的方法

    公开(公告)号：US20130052816A1

    公开(公告)日：2013-02-28

    申请号：US13582239

    申请日：2011-03-02

    申请人： Hiroshi Kambayashi ,  Akinobu Teramoto ,  Tadahiro Ohmi

    发明人： Hiroshi Kambayashi ,  Akinobu Teramoto ,  Tadahiro Ohmi

    IPC分类号： H01L21/28

    CPC分类号： H01L21/28575 ,  H01L21/28264 ,  H01L29/2003 ,  H01L29/452 ,  H01L29/66522

    摘要： A method of producing a semiconductor transistor involving formation of an ohmic electrode on an active layer composed of a GaN-based semiconductor includes a process of forming a first layer 11 composed of tantalum nitride on an active layer 3 and a second layer 12 composed of Al layered on the first layer 11 and a process of forming ohmic electrodes 9s and 9d in ohmic contact with the active layer 3 by heat treating the first layer 11 and the second layer 12 at a temperature of from 520° C. to 600° C.

    摘要翻译： 涉及在由GaN基半导体构成的有源层上形成欧姆电极的半导体晶体管的制造方法包括在有源层3上形成由氮化钽构成的第一层11和由Al构成的第二层12的工序 层叠在第一层11上，并且通过在520℃至600℃的温度下热处理第一层11和第二层12，形成欧姆电极9s和9d与有源层3欧姆接触的工艺。

    Semiconductor device and method of manufacturing the same
    7.
    发明授权
    Semiconductor device and method of manufacturing the same 失效
    半导体装置及其制造方法

    公开(公告)号：US08183670B2

    公开(公告)日：2012-05-22

    申请号：US11651034

    申请日：2007-01-09

    申请人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Akinobu Teramoto ,  Hiroshi Akahori ,  Keiichi Nii

    发明人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Akinobu Teramoto ,  Hiroshi Akahori ,  Keiichi Nii

    IPC分类号： H01L29/04

    CPC分类号： H01L21/3185 ,  H01L21/30604 ,  H01L21/31654 ,  H01L21/318 ,  H01L29/6659

    摘要： In a semiconductor device formed on a silicon surface which has a substantial (110) crystal plane orientation, the silicon surface is flattened so that an arithmetical mean deviation of surface Ra is not greater than 0.15 nm, preferably, 0.09 nm, which enables to manufacture an n-MOS transistor of a high mobility. Such a flattened silicon surface is obtained by repeating a deposition process of a self-sacrifice oxide film in an oxygen radical atmosphere and a removing process of the self-sacrifice oxide film, by cleaning the silicon surface in deaerated H2O or a low OH density atmosphere, or by strongly terminating the silicon surface by hydrogen or heavy hydrogen. The deposition process of the self-sacrifice oxide film may be carried out by isotropic oxidation.

    摘要翻译： 在形成在具有大致（110）晶面取向的硅表面上的半导体器件中，硅表面变平，使得表面Ra的算术平均偏差不大于0.15nm，优选为0.09nm，这使得能够制造 高迁移率的n-MOS晶体管。 通过在脱氧H 2 O或低OH密度气氛中清洗硅表面，通过在氧自由基气氛中重复自牺牲氧化物膜的沉积工艺和自牺牲氧化物膜的去除工艺来获得这种扁平化的硅表面 ，或通过氢或重氢强烈地终止硅表面。 自牺牲氧化膜的沉积工艺可以通过各向同性氧化进行。