-
公开(公告)号：US20220238468A1
公开(公告)日：2022-07-28
申请号：US17159080
申请日：2021-01-26
发明人： Da-Jun Lin , Bin-Siang Tsai , Fu-Yu Tsai
IPC分类号： H01L23/00
摘要： A method for fabricating a semiconductor device includes the steps of first forming an aluminum (Al) pad on a substrate, forming a passivation layer on the substrate and an opening exposing the Al pad, forming a cobalt (Co) layer in the opening and on the Al pad, bonding a wire onto the Co layer, and then performing a thermal treatment process to form a Co—Pd alloy on the Al pad.
-
公开(公告)号：US11121312B2
公开(公告)日：2021-09-14
申请号：US16563924
申请日：2019-09-08
发明人： Da-Jun Lin , Tai-Cheng Hou , Bin-Siang Tsai , Ting-An Chien
摘要： A method for fabricating semiconductor device includes the steps of: forming an inter-metal dielectric (IMD) layer on a substrate; forming a metal interconnection in the IMD layer; forming a magnetic tunneling junction (MTJ) on the metal interconnection; forming a top electrode on the MTJ; and forming a trapping layer on the top electrode for trapping hydrogen. Preferably, the trapping layer includes a concentration gradient, in which a concentration of hydrogen decreases from a top surface of the top electrode toward the MTJ.
-
公开(公告)号：US11114331B2
公开(公告)日：2021-09-07
申请号：US16431684
申请日：2019-06-04
发明人： Hao-Hsuan Chang , Hung-Chun Lee , Shu-Ming Yeh , Ting-An Chien , Bin-Siang Tsai
IPC分类号： H01L21/76 , H01L21/762 , H01L21/02 , H01L21/311
摘要： A method for fabricating semiconductor device includes the steps of: forming a trench in a substrate; forming a pad layer adjacent to two sides of trench; forming a dielectric layer to fill the trench; and performing a dry etching process to remove the pad layer and part of the dielectric layer to form a shallow trench isolation (STI). Preferably, the dry etching process comprises a non-plasma etching process.
-
公开(公告)号：US20210272841A1
公开(公告)日：2021-09-02
申请号：US17325125
申请日：2021-05-19
发明人： Da-Jun Lin , Bin-Siang Tsai , Chich-Neng Chang
IPC分类号： H01L21/768 , H01L23/522 , H01L23/528 , H01L23/532
摘要： A structure of semiconductor device includes a substrate, having a dielectric layer on top. The structure further includes at least two metal elements being adjacent, disposed in the dielectric layer, wherein an air gap is existing between the two metal elements. The air gap has a cross-section of substantially bottle shape with a flat top. A porous dielectric layer is disposed over the substrate, sealing the flat top of the air gap. An inter-layer dielectric layer disposed on the porous dielectric layer.
-
公开(公告)号：US11094900B2
公开(公告)日：2021-08-17
申请号：US16241997
申请日：2019-01-08
发明人： Da-Jun Lin , Bin-Siang Tsai , Chin-Chia Yang
摘要： A method for fabricating semiconductor device includes the steps of: forming a first metal interconnection in a first inter-metal dielectric (IMD) layer; performing a treatment process to rough a top surface of the first metal interconnection; and forming a carbon nanotube (CNT) junction on the first metal interconnection. Preferably, the treatment process further includes forming protrusions on the top surface of the first metal interconnection, in which the protrusions and the first metal interconnection comprise same material.
-
公开(公告)号：US20210202307A1
公开(公告)日：2021-07-01
申请号：US17195648
申请日：2021-03-09
发明人： Da-Jun Lin , Bin-Siang Tsai
IPC分类号： H01L21/768 , H01L23/522 , H01L23/532
摘要： A method for fabricating semiconductor device includes the steps of: forming a dielectric layer on a substrate; forming a trench in the dielectric layer; forming a first liner in the trench, wherein the first liner comprises Co—Ru alloy; forming a metal layer on the first liner; and planarizing the metal layer and the first liner to form a metal interconnection.
-
公开(公告)号：US11049765B2
公开(公告)日：2021-06-29
申请号：US16866360
申请日：2020-05-04
发明人： Da-Jun Lin , Bin-Siang Tsai , Chich-Neng Chang
IPC分类号： H01L23/522 , H01L23/528 , H01L21/768 , H01L23/532
摘要： A structure of semiconductor device includes a substrate, having a dielectric layer on top. The structure further includes at least two metal elements being adjacent, disposed in the dielectric layer, wherein an air gap is existing between the two metal elements. A porous dielectric layer is disposed over the substrate, sealing the air gap. An inter-layer dielectric layer disposed on the porous dielectric layer.
-
公开(公告)号：US10892348B2
公开(公告)日：2021-01-12
申请号：US16396788
申请日：2019-04-29
发明人： Hao-Hsuan Chang , Bin-Siang Tsai , Ting-An Chien , Yi-Liang Ye
IPC分类号： H01L29/66 , H01L21/62 , H01L21/02 , H01L21/265 , H01L21/308 , H01L21/762 , H01L29/78
摘要： A method of rounding fin-shaped structures includes the following steps. A substrate including fin-shaped structures, and pad oxide caps and pad nitride caps covering the fin-shaped structures from bottom to top are provided. An isolation structure fills between the fin-shaped structures. A removing process is performed to remove a top part of the isolation structure and expose top parts of the fin-shaped structures. An oxidation process is performed to oxidize sidewalls of the top parts of the fin-shaped structures, thereby forming oxidized parts covering sidewalls of the top parts of the fin-shaped structures. The pad nitride caps are removed. The pad oxide caps and the oxidized parts are removed at the same time, thereby forming rounding fin-shaped structures.
-
公开(公告)号：US20200343371A1
公开(公告)日：2020-10-29
申请号：US16396788
申请日：2019-04-29
发明人： Hao-Hsuan Chang , Bin-Siang Tsai , Ting-An Chien , Yi-Liang Ye
IPC分类号： H01L29/66 , H01L21/762 , H01L21/02 , H01L21/265 , H01L21/308
摘要： A method of rounding fin-shaped structures includes the following steps. A substrate including fin-shaped structures, and pad oxide caps and pad nitride caps covering the fin-shaped structures from bottom to top are provided. An isolation structure fills between the fin-shaped structures. A removing process is performed to remove a top part of the isolation structure and expose top parts of the fin-shaped structures. An oxidation process is performed to oxidize sidewalls of the top parts of the fin-shaped structures, thereby forming oxidized parts covering sidewalls of the top parts of the fin-shaped structures. The pad nitride caps are removed. The pad oxide caps and the oxidized parts are removed at the same time, thereby forming rounding fin-shaped structures.
-
公开(公告)号：US20200185629A1
公开(公告)日：2020-06-11
申请号：US16241997
申请日：2019-01-08
发明人： Da-Jun Lin , Bin-Siang Tsai , Chin-Chia Yang
摘要： A method for fabricating semiconductor device includes the steps of: forming a first metal interconnection in a first inter-metal dielectric (IMD) layer; performing a treatment process to rough a top surface of the first metal interconnection; and forming a carbon nanotube (CNT) junction on the first metal interconnection. Preferably, the treatment process further includes forming protrusions on the top surface of the first metal interconnection, in which the protrusions and the first metal interconnection comprise same material.
-
-
-
-
-
-
-
-
-
搜索结果
136 条记录 (耗时 0.019 秒)
