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208 条记录 (耗时 0.041 秒)

    ORGANIC ELECTRONIC ELEMENT AND ITS MANUFACTURING METHOD
    91.
    发明申请
    ORGANIC ELECTRONIC ELEMENT AND ITS MANUFACTURING METHOD 有权
    有机电子元件及其制造方法

    公开(公告)号：US20110315972A1

    公开(公告)日：2011-12-29

    申请号：US13254886

    申请日：2010-03-03

    申请人： Nobuaki Takahashi ,  Hiroaki Yamagishi

    发明人： Nobuaki Takahashi ,  Hiroaki Yamagishi

    IPC分类号： H01L51/00 ,  H01L51/56

    CPC分类号： H01L51/5256 ,  H01L51/0059 ,  H01L51/0084 ,  H01L51/0085 ,  H01L51/0087 ,  H01L51/0088 ,  H01L51/0097 ,  Y02E10/549 ,  Y02P70/521

    摘要： The present invention provides an organic electronic element manufacturing method which provides a low manufacturing cost and excellent performance stability, and specifically an organic electronic element manufacturing method which provides a low manufacturing cost, and minimizes emission unevenness, lowering of emission efficiency and shortening of lifetime due to deterioration of as barrier property of sealing. The organic electronic element manufacturing method is featured in that it comprises the steps of forming an organic electronic structure composed of a first electrode, at least one organic layer and a second electrode on a flexible substrate, and applying a flexible sealing substrate to the organic electronic structure, followed by heating treatment, wherein a heating temperature, at which the heating treatment is carried out, is less than Tg (a glass transition temperature) of the substrate and not less than Tg of the sealing substrate.

    摘要翻译： 本发明提供了一种提供低制造成本和优异的性能稳定性的有机电子元件制造方法，特别是提供低制造成本的有机电子元件制造方法，并且最小化发射不均匀性，降低发光效率和缩短寿命 作为密封阻隔性的劣化。 有机电子元件制造方法的特征在于，其包括以下步骤：在柔性基板上形成由第一电极，至少一个有机层和第二电极组成的有机电子结构，以及将柔性密封基板施加到有机电子 结构，然后进行加热处理，其中进行加热处理的加热温度小于基板的Tg（玻璃化转变温度），并且不小于密封基板的Tg。

    IMAGE FORMING APPARATUS AND METHOD OF INKJET HAVING HUMIDITY ADJUSTMENT MECHANISM
    92.
    发明申请
    IMAGE FORMING APPARATUS AND METHOD OF INKJET HAVING HUMIDITY ADJUSTMENT MECHANISM 审中-公开
    图像形成装置和具有湿度调节机构的喷墨方法

    公开(公告)号：US20110292103A1

    公开(公告)日：2011-12-01

    申请号：US13118832

    申请日：2011-05-31

    申请人： Takashi Hatakeyama ,  Atsushi Kubota ,  Nobuaki Takahashi

    发明人： Takashi Hatakeyama ,  Atsushi Kubota ,  Nobuaki Takahashi

    IPC分类号： B41J29/38

    CPC分类号： B41J11/0015

    摘要： According to one embodiment, an inkjet image forming apparatus includes an inkjet head configured to discharge water-based ink and form an image on a surface of a recording medium, a medium conveyance part configured to convey the recording medium, a solution imparting part that is disposed upstream of the inkjet head in a recording medium conveyance direction and uses another inkjet head to impart a solution to the surface of the recording medium on which the image is formed, and a controller configured to calculate an imparting amount of the solution to be imparted to the recording medium and control an imparting operation to the recording medium.

    摘要翻译： 根据一个实施例，喷墨图像形成装置包括：喷墨头，被配置为排出水基油墨并在记录介质的表面上形成图像;介质输送部，构造成输送记录介质;溶液赋予部， 设置在记录介质传送方向上的喷墨头的上游，并且使用另一个喷墨头将溶液赋予其上形成有图像的记录介质的表面;以及控制器，被配置为计算要赋予的溶液的赋予量 并且控制对记录介质的赋予操作。

    Method for manufacturing a semiconductor device
    93.
    发明授权
    Method for manufacturing a semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号：US07892973B2

    公开(公告)日：2011-02-22

    申请号：US12605586

    申请日：2009-10-26

    申请人： Masaya Kawano ,  Koji Soejima ,  Nobuaki Takahashi

    发明人： Masaya Kawano ,  Koji Soejima ,  Nobuaki Takahashi

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2224/13 ,  H01L2224/13025 ,  H01L2224/14181

    摘要： A falling off of a through electrode is inhibited without decreasing a reliability of a semiconductor device including a through electrode. A semiconductor device 100 includes: a silicon substrate 101; a through electrode 129 extending through the silicon substrate 101; and a first insulating ring 130 provided in a circumference of a side surface of the through electrode 129 and extending through the semiconductor substrate 101. In addition, the semiconductor device 100 also includes a protruding portion 146, being provided at least in the vicinity of a back surface of a device-forming surface of the semiconductor substrate 101 so as to contact with the through electrode 129, and protruding in a direction along the surface of the semiconductor substrate 101 toward an interior of the through electrode 129.

    摘要翻译： 在不降低包括通孔的半导体器件的可靠性的情况下，抑制穿通电极的脱落。 半导体器件100包括：硅衬底101; 穿过硅衬底101的通孔电极129; 以及设置在贯通电极129的侧面的周围并延伸穿过半导体基板101的第一绝缘环130.此外，半导体器件100还包括突出部分146，其设置在至少在 半导体衬底101的器件形成表面的背表面与通孔129接触，并沿着半导体衬底101的表面朝向通孔129的内部突出。

    IMAGE RECORDING APPARATUS
    96.
    发明申请
    IMAGE RECORDING APPARATUS 审中-公开
    图像记录装置

    公开(公告)号：US20100171804A1

    公开(公告)日：2010-07-08

    申请号：US12644419

    申请日：2009-12-22

    申请人： Nobuaki Takahashi ,  Atsushi Kubota ,  Kazuhiko Ohtsu ,  Satoshi Kaiho ,  Takashi Kado

    发明人： Nobuaki Takahashi ,  Atsushi Kubota ,  Kazuhiko Ohtsu ,  Satoshi Kaiho ,  Takashi Kado

    IPC分类号： B41J2/01

    CPC分类号： B41J11/0085 ,  B41J11/0025 ,  B41J11/007

    摘要： An image recording apparatus includes a conveyance unit which includes a conveyance belt and an air suction unit for sucking air through the conveyance belt to adsorb a recording medium onto the conveyance belt. A recording head ejects ink to carry out recording on the recording medium conveyed by the conveyance unit. An adsorption force adjusting unit adjusts the adsorption force for the recording medium on the conveyance belt, which occurs by sucking air, according to the size of the recording medium.

    摘要翻译： 图像记录装置包括输送单元，该输送单元包括输送带和吸气单元，用于通过输送带吸入空气以将记录介质吸附到输送带上。 记录头喷射墨水以在由输送单元输送的记录介质上进行记录。 吸附力调节单元根据记录介质的尺寸来调节通过吸入空气发生的输送带上的记录介质的吸附力。

    Hot bend pipe and a process for its manufacture
    98.
    发明申请
    Hot bend pipe and a process for its manufacture 有权
    热弯管及其制造工艺

    公开(公告)号：US20090199612A1

    公开(公告)日：2009-08-13

    申请号：US12318882

    申请日：2009-01-12

    申请人： Nobuaki Takahashi ,  Akio Yamamoto ,  Masahiko Hamada

    发明人： Nobuaki Takahashi ,  Akio Yamamoto ,  Masahiko Hamada

    IPC分类号： B21D9/00 ,  B21D9/05

    CPC分类号： B21C37/08 ,  B23K33/006 ,  B23K2101/06 ,  B23K2103/04 ,  C21D9/08 ,  C21D9/50 ,  C22C38/02 ,  C22C38/04 ,  C22C38/06

    摘要： A high-strength hot bend pipe which has a balance between an excellent strength of at least X70 grade and toughness and which has excellent tensile properties and a weld metal with excellent low temperature toughness is manufactured. A UOE steel pipe having a base metal with a composition of C: 0.03-0.12%, Si: 0.05-0.50%, Mn: 1.4-2.2%, S: at most 0.01%, Al: at most 0.06%, N: at most 0.008%, and a remainder of Fe and impurities, with the carbon equivalent (Ceq) being at most 0.36% and the weld cracking parameter (Pcm) being at most 0.22%, and having a weld metal with a weld cracking parameter (Pcm) of at most 0.28%, a B content of at most 5 ppm, and an O content of at most 280 ppm is heated to a temperature range of 900-1100° C. and subjected to bending, and then is immediately cooled to a temperature range of 300° C. or lower at a cooling rate of at least 3° C./sec, and then is tempered in a temperature range of 300-500° C.

    摘要翻译： 制造具有至少X70等级的优异强度和具有优异的拉伸性能的优异强度与具有优异的低温韧性的焊接金属之间的平衡的高强度热弯管。 具有组成为C：0.03〜0.12％，Si：0.05〜0.50％，Mn：1.4〜2.2％，S：0.01％以下，Al：0.06％以下的贱金属的UOE钢管，N： 最多0.008％，余量为Fe和杂质，碳当量（Ceq）最大为0.36％，焊接裂纹参数（Pcm）为0.22％以下，具有焊缝裂纹参数（Pcm ）为0.28％以下，B含量为5ppm以下，O含量为280ppm以下，加热到900〜1100℃的温度范围，进行弯曲，然后立即冷却至 温度范围为300℃以下，冷却速度为3℃/秒以上，然后在300-500℃的温度范围内回火。