公开(公告)号：US20130207081A1

公开(公告)日：2013-08-15

申请号：US13566290

申请日：2012-08-03

申请人： Chihaya ADACHI ,  Takuma Yasuda ,  Yang Yu Seok ,  Hayato Kakizoe ,  Hiroyuki Mieno

发明人： Chihaya ADACHI ,  Takuma Yasuda ,  Yang Yu Seok ,  Hayato Kakizoe ,  Hiroyuki Mieno

IPC分类号： C07D495/14 ,  H01L51/05

CPC分类号： C07D495/14 ,  C09B57/00 ,  H01L51/0071 ,  H01L51/0074 ,  H01L51/0512 ,  H01L51/0533 ,  H01L51/0545

摘要： An organic semiconductor device which has an organic semiconductor layer formed by crystallizing a compound represented by the following formula (1) from a solution of the compound: wherein X1, X2 and X3 represent O, S, Se or Te; at least one of R1, R2, R3 and R4 represents a group that has both an aromatic ring to form a π-conjugated system with the skeleton to which it bonds, and a chainlike structure in which the number of the carbon atoms constituting the main chain is from 4 to 20, and the remaining ones represent a hydrogen atom or a substituent.

摘要翻译： 一种有机半导体器件，其具有通过以下化合物的溶液使由下式（1）表示的化合物结晶而形成的有机半导体层：其中X1，X2和X3表示O，S，Se或Te; R 1，R 2，R 3和R 4中的至少一个表示具有芳环以形成与其键合的骨架的π-共轭体系的基团，以及构成主要碳原子数的链状结构 链是4〜20，其余的表示氢原子或取代基。

公开(公告)号：US08114704B2

公开(公告)日：2012-02-14

申请号：US12379856

申请日：2009-03-03

申请人： Do Hwan Kim ,  Hyun Sik Moon ,  Byung Wook Yoo ,  Sang Yoon Lee ,  Bang Lin Lee ,  Jeong Il Park ,  Eun Jeong Jeong

发明人： Do Hwan Kim ,  Hyun Sik Moon ,  Byung Wook Yoo ,  Sang Yoon Lee ,  Bang Lin Lee ,  Jeong Il Park ,  Eun Jeong Jeong

IPC分类号： H01L51/40

CPC分类号： H01L51/0533

摘要： Disclosed herein are a method for fabricating an organic thin film transistor, including treating the surfaces of a gate insulating layer and source/drain electrodes with a self-assembled monolayer (SAM)-forming compound through a one-pot reaction, and an organic thin film transistor fabricated by the method. According to example embodiments, the surface-treatment of the gate insulating layer and the source/drain electrodes may be performed in a single vessel through a single process.

摘要翻译： 本文公开了一种用于制造有机薄膜晶体管的方法，包括通过一锅反应用自组装单层（SAM）形成化合物处理栅极绝缘层和源极/漏极的表面，以及有机薄膜 通过该方法制造的薄膜晶体管。 根据示例实施例，栅极绝缘层和源极/漏极的表面处理可以通过单个工艺在单个容器中进行。

公开(公告)号：US20110031494A1

公开(公告)日：2011-02-10

申请号：US12911041

申请日：2010-10-25

申请人： Gen FUJII ,  Erika TAKAHASHI

发明人： Gen FUJII ,  Erika TAKAHASHI

IPC分类号： H01L29/12 ,  H01L21/36

CPC分类号： H01L51/0022 ,  H01L51/0533 ,  H01L51/0545

摘要： A method of manufacturing a semiconductor device includes steps of forming a gate electrode over a light-transmitting substrate, forming a gate insulating layer containing an inorganic material over the gate electrode and the substrate, forming an organic layer containing a photopolymerizable reactive group over the gate insulating layer, polymerizing selectively the organic layer by irradiating the organic layer with light from back side of the substrate, using the gate electrode as a mask, forming an organic polymer layer by removing a residue of the organic layer, being other than polymerized, forming an organosilane film including a hydrolytic group over the gate insulating layer in a region other than a region in which the organic polymer layer is formed, forming source and drain electrodes by applying a composition containing a conductive material over the organic polymer layer, and forming a semiconductor layer over the gate electrode, the source and drain electrodes.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在透光衬底上形成栅电极，在栅电极和衬底上形成含有无机材料的栅极绝缘层，在栅极上形成含有可光聚合反应性基团的有机层 通过使用栅电极作为掩模从基板的背面用光照射有机层来选择性地聚合有机层，通过除去除了聚合的有机层的残留物形成有机聚合物层，形成 在除了形成有机聚合物层的区域以外的区域的栅极绝缘层上包含水解基团的有机硅烷膜，通过在有机聚合物层上涂布含有导电性材料的组合物形成源极和漏极，形成 栅电极上的半导体层，源极和漏极。

公开(公告)号：US07863086B2

公开(公告)日：2011-01-04

申请号：US12553780

申请日：2009-09-03

申请人： Bo-sung Kim ,  Soo-jin Kim ,  Young-min Kim ,  Keun-kyu Song ,  Yong-uk Lee ,  Mun-pyo Hong ,  Tae-young Choi ,  Joon-hak Oh

发明人： Bo-sung Kim ,  Soo-jin Kim ,  Young-min Kim ,  Keun-kyu Song ,  Yong-uk Lee ,  Mun-pyo Hong ,  Tae-young Choi ,  Joon-hak Oh

IPC分类号： H01L51/40

CPC分类号： H01L51/0533 ,  H01L51/107

摘要： A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.

摘要翻译： 薄膜晶体管基板包括绝缘基板，形成在绝缘基板上的栅极电极，形成在栅电极上并具有用于暴露栅电极的至少一部分的开口的第一栅极绝缘膜，覆盖 栅电极由开口暴露并且具有比第一栅极绝缘膜更大的介电常数，在第二栅极绝缘膜的中心区域彼此分开设置的源电极和漏电极，并在其间限定沟道区域， 形成在沟道区域中的有机半导体层。 还提供了一种用于形成TFT基板的方法。 因此，本发明提供了TFT的特性提高的TFT基板。

公开(公告)号：US07863085B2

公开(公告)日：2011-01-04

申请号：US12244364

申请日：2008-10-02

申请人： Sang Chul Lim ,  Seong Hyun Kim ,  Yong Suk Yang ,  Doo Hyeb Youn ,  Zin Sig Kim

发明人： Sang Chul Lim ,  Seong Hyun Kim ,  Yong Suk Yang ,  Doo Hyeb Youn ,  Zin Sig Kim

IPC分类号： H01L51/40

CPC分类号： H01L51/0533 ,  H01L51/0097 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0562

摘要： An organic thin film transistor (OTFT), a method of manufacturing the same, and a biosensor using the OTFT are provided. The OTFT includes a gate electrode, a gate insulating layer, source and drain electrodes, and an organic semiconductor layer disposed on a substrate and further includes an interface layer formed between the gate insulating layer and the organic semiconductor layer by a sol-gel process. The gate insulating layer is formed of an organic polymer, and the interface layer is formed of an inorganic material. The OTFT employs the interface layer interposed between the gate insulating layer and the organic semiconductor layer so that the gate insulating layer can be protected from the exterior and adhesion of the gate insulating layer with the organic semiconductor layer can be improved, thereby increasing driving stability. Also, since the OTFT can use a plastic substrate, the manufacture of the OTFT is inexpensive so that the OTFT can be used as a disposable biosensor.

摘要翻译： 提供有机薄膜晶体管（OTFT），其制造方法和使用OTFT的生物传感器。 OTFT包括栅极电极，栅极绝缘层，源极和漏极电极以及设置在基板上的有机半导体层，并且还包括通过溶胶 - 凝胶法在栅极绝缘层和有机半导体层之间形成的界面层。 栅绝缘层由有机聚合物形成，界面层由无机材料形成。 OTFT采用插入在栅极绝缘层和有机半导体层之间的界面层，从而可以保护栅极绝缘层免受外部的侵蚀，从而可以提高栅极绝缘层与有机半导体层的粘附性，从而提高驱动稳定性。 此外，由于OTFT可以使用塑料基板，OTFT的制造便宜，因此OTFT可以用作一次性生物传感器。

公开(公告)号：US07678463B2

公开(公告)日：2010-03-16

申请号：US11642504

申请日：2006-12-20

申请人： Tobin J. Marks ,  Antonio Facchetti

发明人： Tobin J. Marks ,  Antonio Facchetti

IPC分类号： B32B25/20

CPC分类号： H01L51/0529 ,  B82Y30/00 ,  H01L51/052 ,  H01L51/0533 ,  H01L51/0545 ,  H01L51/0579 ,  Y10T428/31536 ,  Y10T428/31663

摘要： Compositions, methods of using inorganic moieties for dielectric modulation, and related device structures.

摘要翻译： 组合物，使用无机部分进行介电调制的方法以及相关的器件结构。

公开(公告)号：US20100025667A1

公开(公告)日：2010-02-04

申请号：US12462101

申请日：2009-07-29

申请人： Chien-Cheng Liu ,  Hsin-Fei Meng ,  Sheng-Fu Horng

发明人： Chien-Cheng Liu ,  Hsin-Fei Meng ,  Sheng-Fu Horng

IPC分类号： H01L51/10 ,  H01L51/40

CPC分类号： H01L51/0533 ,  H01L51/0545

摘要： The present invention discloses an organic field effect transistor and a manufacturing method thereof. The organic field effect transistor comprises a top-contact type or a bottom-contact type, and the manufacturing method thereof comprises the following steps: a substrate is provided, a metal gate is formed on the substrate, an inorganic insulating layer is formed on the substrate and the metal gate, a surface of the insulating layer is polished, an organic filler is filled in pores on the insulating layer as an insulating treatment, a modified layer is formed on the inorganic insulating layer, and finally an organic semiconductor layer, a source and a drain are formed. By combining the advantages of simply liquefied process of the organic material and the high stability of inorganic material, and operation conditions of control process, the present invention can achieve effectively that the device is high carrier mobility and high on/off ratio.

摘要翻译： 本发明公开了一种有机场效应晶体管及其制造方法。 有机场效应晶体管包括顶接触型或底接触型，其制造方法包括以下步骤：提供基板，在基板上形成金属栅极，在其上形成无机绝缘层 基板和金属栅极，绝缘层的表面被抛光，绝缘层上的孔中填充有机填料作为绝缘处理，在无机绝缘层上形成改性层，最后形成有机半导体层， 源极和漏极形成。 通过结合有机材料的简单液化过程和无机材料的高稳定性的优点以及控制过程的操作条件，本发明可以有效地实现器件的高载流子迁移率和高开/关比。

公开(公告)号：US20090317942A1

公开(公告)日：2009-12-24

申请号：US12553780

申请日：2009-09-03

申请人： Bo-sung KIM ,  Soo-jin KIM ,  Young-min KIM ,  Keun-kyu SONG ,  Yong-uk LEE ,  Mun-pyo HONG ,  Tae-young CHOI ,  Joon-hak OH

发明人： Bo-sung KIM ,  Soo-jin KIM ,  Young-min KIM ,  Keun-kyu SONG ,  Yong-uk LEE ,  Mun-pyo HONG ,  Tae-young CHOI ,  Joon-hak OH

IPC分类号： H01L51/40 ,  H01L21/336

CPC分类号： H01L51/0533 ,  H01L51/107

摘要： A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.

摘要翻译： 薄膜晶体管基板包括绝缘基板，形成在绝缘基板上的栅极电极，形成在栅电极上并具有用于暴露栅电极的至少一部分的开口的第一栅极绝缘膜，覆盖 栅电极由开口暴露并且具有比第一栅极绝缘膜更大的介电常数，在第二栅极绝缘膜的中心区域彼此分开设置的源电极和漏电极，并在其间限定沟道区域， 形成在沟道区域中的有机半导体层。 还提供了一种用于形成TFT基板的方法。 因此，本发明提供了TFT的特性提高的TFT基板。

公开(公告)号：US20090095954A1

公开(公告)日：2009-04-16

申请号：US12199446

申请日：2008-08-27

申请人： Tomoaki Onoue ,  Takeshi Yasuda ,  Tetsuo Tsutsui

发明人： Tomoaki Onoue ,  Takeshi Yasuda ,  Tetsuo Tsutsui

IPC分类号： H01L51/10 ,  H01L51/40

CPC分类号： H01L51/0533 ,  H01L21/31691 ,  H01L51/0537

摘要： A field-effect transistor is provided, which includes an organic thin film and which can realize a low threshold voltage while a stable, high field-effect mobility is ensured at the same time. In a field-effect transistor provided with a gate electrode, a source electrode, a drain electrode, a semiconductor film, a gate insulating film, and a substrate, the gate insulating film is formed from a plurality of insulating layers. Here, a first insulating layer in contact with the semiconductor film is formed from poly-p-xylylene formed into a film by a CVD method. A second insulating layer is formed from, for example, cyanoethylpullulan, and the dielectric constant is specified to be higher than that of the first insulating layer.

摘要翻译： 提供场效应晶体管，其包括有机薄膜，并且可以在同时确保稳定的高场效应迁移率的同时实现低阈值电压。 在设置有栅电极，源极，漏极，半导体膜，栅极绝缘膜和基板的场效应晶体管中，栅极绝缘膜由多个绝缘层形成。 这里，与半导体膜接触的第一绝缘层由通过CVD法形成为膜的聚对二甲苯形成。 第二绝缘层由例如氰乙基普兰兰形成，并且介电常数规定为高于第一绝缘层的介电常数。

公开(公告)号：US07485894B2

公开(公告)日：2009-02-03

申请号：US11582534

申请日：2006-10-18

申请人： Taek Ahn ,  Min-Chul Suh ,  Jin-Seong Park ,  Seok-Jong Lee ,  Jung-Han Shin

发明人： Taek Ahn ,  Min-Chul Suh ,  Jin-Seong Park ,  Seok-Jong Lee ,  Jung-Han Shin

IPC分类号： H01L29/08

CPC分类号： H01L51/0533 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L51/0545

摘要： A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and is electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and an ohmic contact layer that is interposed between the source/drain electrodes and the organic semiconductor and contains a compound having a hole transporting unit. By providing the ohmic contact layer, the ohmic contact between source/drain electrodes and the organic semiconductor layer can be effectively achieved and the adhesive force between the source/drain electrodes and the organic semiconductor layer is increased. In addition, a flat panel display having improved reliability can be obtained using the thin film transistor.

摘要翻译： 薄膜晶体管包括：栅电极; 源极和漏极与栅电极绝缘; 与栅电极绝缘并与源电极和漏电极电连接的有机半导体层; 绝缘层，其使栅电极与源极和漏电极或有机半导体层绝缘; 以及介于源/漏电极和有机半导体之间并包含具有空穴传输单元的化合物的欧姆接触层。 通过设置欧姆接触层，可以有效地实现源/漏电极和有机半导体层之间的欧姆接触，并且增加源/漏电极和有机半导体层之间的粘合力。 此外，可以使用薄膜晶体管获得具有提高的可靠性的平板显示器。