摘要:
A laser diode array, having one or a plurality of electrically mounted laser diode bars, in which current paths through the array are sufficiently parallel and close together to result in a substantial reduction of inductance. As a result, higher duty cycles at lower pulse widths are possible. In some embodiments, a heatsink is provided as part of an overall assembly. The heatsink may provide part or all of a return portion of the current path for the array. Alternatively, the heatsink may be insulated from the rest of the array. The array itself may be fabricated in any of a number of known manners.
摘要:
The laser diode arrays with removable linear laser diode bars and the methods of removing and replacing linear laser diode bars of the present invention provide easy and immediate removal of individual linear laser diode bars in laser diode arrays. The laser diode array is at least partially made of a plurality of removable linear laser diode bars and a plurality of spacers, such that each removable linear laser diode bar is disposed between a respective pair of spacers. A linear laser diode bar may be slideably removed from between the respective pair of spacers in the laser diode array without breaking any mechanical connection between the removable linear laser diode bar and the respective pair of spacers. A replacement linear laser diode bar may then be slideably inserted between the respective pair of spacers without forming a mechanical connection between the replacement linear laser diode bar and the spacers.
摘要:
A tunable external cavity laser apparatus and method of laser operation. The apparatus includes a gain medium having first and second facets defining a facet laser cavity in which a first portion of light is internally reflected to produce a first lasing condition having a first reflection phase. A reflective element is positioned opposite the second facet of the gain medium, forming an external laser cavity defined by the first facet and reflective element. A second portion of light is internally reflected within the external cavity to produce a second lasing condition having a second reflection phase. A phase adjustment means is employed to adjust the first reflection phase relative to the second reflection phase so as to control a characteristic of the output beam emitted from the apparatus, such as the power output level of the beam. In one aspect, the relative phase is adjusted by controlling the temperature of the gain medium.
摘要:
In an excimer laser oscillation apparatus including a laser chamber (20) constituted by a laser tube (2) for storing a laser gas containing a gas mixture of at least one inert gas selected from the group consisting of Kr, Ar, and Ne, He and F2 gas, and an optical resonator consisting of a pair of reflection mirrors (5, 6) arranged to sandwich the laser chamber (20) therebetween, the inner surface of the laser chamber (20) for storing the laser gas has a reflection-free surface with respect to light of a desired wavelength of 248 nm, 193 nm, or 157 nm, and the uppermost surface of the inner surface consists of a fluoride, and a means (waveguide 1) for introducing a microwave for exciting the laser gas in the laser chamber (20) is prepared. With this arrangement, an excimer laser oscillation apparatus, an oscillation method, and an exposure apparatus can be provided, which can reduce the load on the lens material and its surface, can simplify the mirror or laser scanning control system, and are satisfactorily used in mass production since the service life of an excimer laser can be sufficiently prolonged.
摘要:
High powered laser including a microchip laser array having an array of microchip laser beam shooting parts, and a heat transfer member of a material with a high thermal conductivity fitted between, and in contact with, the microchip laser beam shooting parts, for transferring heat from the microchip laser beam shooting parts to the outside of the high powered laser, thereby enhancing an output.
摘要:
A laser has at least two coaxial electrode tubes spaced apart to provide a laser cavity therebetween and a cooling system including cooling coils about the outer surface of the outer electrode and about the inner surface of the inner electrode and in heat exchange contact therewith. Support pipes are provided about the outside of the outside cooling coil and about the inside surface of the inner cooling coil. The cooling coils are deformed into improved heat exchange contact with the electrode tubes by internal pressure and may be softened by annealing or the like before the application of the deformation pressure.
摘要:
An optoelectronic laser module, in particular for dense wavelength division multiplex systems, is described. The laser module has a laser diode with an active region, an optical resonator containing a highly silvered reflecting surface and a Bragg interference grating which provides frequency-selective feedback, and a housing which accommodates the laser diode and has a holder for coupling an optical conductor. The Bragg interference grating is configured as a fiber Bragg grating in an optical conductor and the optical conductor is connected to the housing via the holder. As a result, it is possible with the use of standard components to provide a laser having an external resonator whose emission wavelength can be set in a simple way by suitable selection of the fiber Bragg grating.
摘要:
A semiconductor laser module includes a casing defining a chamber, light-emitting means fixed to the casing in the chamber, and a fiber optic connector installed so as to communicate the chamber of the casing to outside. The light-emitting means is fixed to the casing by means of a heat sink. The light-emitting means includes a semiconductor chip mounted on the heat sink for generating laser light, a current supply means arranged near the semiconductor chip on the heat sink, and a collimator lens supported by the heat sink so as to oppose the semiconductor chip.
摘要:
A barrier layer is formed within a microfabricated device, such as a semiconductor laser assembly. The barrier layer is used to separate bonding material from an underlying layer that is located beneath the barrier layer. The barrier layer includes at least three thin layers that have alternating levels of electronegativity. Therefore, a significant amount of intermetallics are formed between the thin layers, thereby creating strong bonds between the thin layers at relatively low temperatures. It is difficult for the bonding material to break the strong bonds of the thin layers, and the bonding material is, therefore, prevented from penetrating the barrier layer and reacting with the underlying layer.