RADIO OVER FIBER SYSTEM AND METHOD FOR CONTROLLING TRANSMISSION TIME
    101.
    发明申请
    RADIO OVER FIBER SYSTEM AND METHOD FOR CONTROLLING TRANSMISSION TIME 审中-公开
    无线电光纤系统和控制传输时间的方法

    公开(公告)号:US20080056167A1

    公开(公告)日:2008-03-06

    申请号:US11737797

    申请日:2007-04-20

    IPC分类号: H04L5/14 H04L5/16

    摘要: A radio-over-fiber (RoF) system and method for controlling a transmission time is provided. In a Time Division Duplex (TDD) wireless communication system comprising a Base Station (BS) having a donor and a remote connected thereto via am optical fiber, upstream and downstream Radio Frequency (RF) signals are transmitted and received, and by reliably transmitting a switch control signal to the remote and simultaneously compensating for a transmission time delay occurring in the optical cable, time synchronization of the upstream and downstream RF signals transmitted and received via antennas of the BS and the remote is controlled, thereby efficiently increasing the performance of a TDD wireless service system.

    摘要翻译: 提供了一种用于控制传输时间的无线电光纤(RoF)系统和方法。 在包括具有供体的基站(BS)和经由光纤远程连接的基站(TDD)的时分双工(TDD)无线通信系统中,发送和接收上行和下行射频(RF)信号,并且通过可靠地发送 切换控制信号到远端,并同时补偿在光缆中发生的传输时延,控制通过BS和遥控器的天线发送和接收的上行和下行RF信号的时间同步,从而有效提高 TDD无线服务系统。

    Phase locked loop with improved phase lock/unlock detection function
    102.
    发明授权
    Phase locked loop with improved phase lock/unlock detection function 失效
    锁相环具有改进的相位锁定/解锁检测功能

    公开(公告)号:US07321649B2

    公开(公告)日:2008-01-22

    申请号:US10747486

    申请日:2003-12-29

    申请人: Jae-hoon Lee

    发明人: Jae-hoon Lee

    IPC分类号: H03D3/24

    摘要: A phase locked loop (PLL) having an improved phase unlock detection function generates a clock pulse signal at a frequency from a synchronization signal of a cathode ray tube (CRT) monitor and includes a phase frequency detector (PFD), a charge pump, a loop filter, a Voltage Controlled Oscillator (VCO), a divider, a phase unlock detection circuit, a phase lock/unlock detection circuit, and an output circuit. The phase unlock detection circuit detects an initial generation of a phase unlock from the up or down signal, outputs a first detection signal, and outputs an internal control signal according to the up or down signal. The phase lock/unlock detection circuit outputs a second detection signal, in response to the internal control signal and the first detection signal. The output circuit performs a logic operation on the first detection signal and the second detection signal and outputs a third detection signal.

    摘要翻译: 具有改进的相位解锁检测功能的锁相环(PLL)从阴极射线管(CRT)监视器的同步信号以频率产生时钟脉冲信号,并且包括相位频率检测器(PFD),电荷泵 环路滤波器,压控振荡器(VCO),分频器,相位解锁检测电路,锁相/解锁检测电路和输出电路。 相位解锁检测电路从上升或下降信号检测相位解锁的初始产生,输出第一检测信号,并根据上升或下降信号输出内部控制信号。 相位锁定/解锁检测电路根据内部控制信号和第一检测信号输出第二检测信号。 输出电路对第一检测信号和第二检测信号执行逻辑运算,并输出第三检测信号。

    Wavelength-division-multiplexed passive optical network using wavelength-locked optical transmitter
    103.
    发明授权
    Wavelength-division-multiplexed passive optical network using wavelength-locked optical transmitter 失效
    使用波长锁定光发射机的波分复用无源光网络

    公开(公告)号:US07319818B2

    公开(公告)日:2008-01-15

    申请号:US11471152

    申请日:2006-06-20

    IPC分类号: H04J14/00

    摘要: Disclosed is a wavelength-division-multiplexed passive optical network using a wavelength-locked optical transmitter. The wavelength-division-multiplexed passive optical network (WDM PON) includes a central office, which includes a plurality of downstream optical transmitters for outputting downstream optical signals having wavelengths according to downstream injection lights, a wavelength division multiplexer including a plurality of de-multiplexing ports linked to the plurality of the downstream optical transmitters by one-to-one, and a multiplexing port linked with the feeder fiber and performing wavelength division multiplexing and wavelength division de-multiplexing, and at least one optical switch interposed between the downstream optical transmitters and the de-multiplexing ports, inputting a downstream band light output from a selected downstream optical transmitter to the multiplexing port, and inputting a downstream optical signal output from a remaining downstream optical transmitter, which is not selected, to the de-multiplexing port.

    摘要翻译: 公开了使用波长锁定光发射机的波分复用无源光网络。 波分复用无源光网络(WDM PON)包括中心局,其包括多个下行光发射机,用于输出具有根据下游注入光的波长的下行光信号,波分多路复用器包括多个解复用 通过一对一连接到多个下游光发射机的端口,以及与馈电光纤链接并执行波分复用和波分解除复用的复用端口,以及插入在下行光发射机之间的至少一个光开关 以及解复用端口,将从所选择的下游光发射机输出的下行带光输入到复用端口,以及将未被选择的剩余下行光发射机输出的下行光信号输入到解复用端口。

    Nitride based semiconductor device and process for preparing the same
    104.
    发明授权
    Nitride based semiconductor device and process for preparing the same 有权
    基于氮化物的半导体器件及其制备方法

    公开(公告)号:US07319064B2

    公开(公告)日:2008-01-15

    申请号:US11203132

    申请日:2005-08-15

    IPC分类号: H01L21/28

    摘要: A process for preparing a nitride based semiconductor device in accordance with the present invention comprises growing a high temperature AlN single crystal layer on a substrate; growing a first GaN layer on the high temperature AlN single crystal layer in a first V/III ratio, under a first pressure of 300 Torr or more, such that the predominant direction of growth is the lateral direction; and growing a second GaN layer on the first GaN layer in a second V/III ratio lower than the first V/III ratio, under a second pressure lower than the first pressure such that the predominant direction of growth is the lateral direction.

    摘要翻译: 根据本发明的制备氮化物基半导体器件的方法包括在衬底上生长高温AlN单晶层; 在300Torr以上的第一压力下以第一V / III比在高温AlN单晶层上生长第一GaN层,使得主要生长方向为横向; 以及在比所述第一压力低的第二压力下,以比所述第一V / III比低的第二V / III比在所述第一GaN层上生长第二GaN层,使得所述主要生长方向为横向。

    Semiconductor light emitting diode and method of manufacturing the same
    105.
    发明申请
    Semiconductor light emitting diode and method of manufacturing the same 审中-公开
    半导体发光二极管及其制造方法

    公开(公告)号:US20070267640A1

    公开(公告)日:2007-11-22

    申请号:US11436651

    申请日:2006-05-19

    IPC分类号: H01L33/00

    摘要: The present invention relates to a semiconductor light emitting diode. The semiconductor light emitting diode includes a substrate; an n-type nitride semiconductor layer that is formed on the substrate; an active layer that is formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer that is formed on the active layer; a first undoped GaN layer that is formed on the p-type nitride semiconductor layer; an AlGaN layer that is formed on the first undoped GaN layer so as to provide a two-dimensional electron gas layer to the interface with the first undoped GaN layer; a second undoped GaN layer that is formed on the AlGaN layer and has irregularities such that the light generated in the active layer is not internally reflected toward the active layer; a p-type transparent electrode that is formed on the second undoped GaN layer; and an n-type electrode and p-type electrode that are formed to be respectively connected onto the n-type nitride semiconductor layer and the p-type transparent electrode.

    摘要翻译: 本发明涉及一种半导体发光二极管。 半导体发光二极管包括基板; 形成在所述基板上的n型氮化物半导体层; 形成在n型氮化物半导体层上的有源层; 形成在有源层上的p型氮化物半导体层; 在p型氮化物半导体层上形成的第一未掺杂GaN层; AlGaN层,形成在第一未掺杂的GaN层上,以便向与第一未掺杂GaN层的界面提供二维电子气层; 第二未掺杂的GaN层,其形成在AlGaN层上并且具有凹凸,使得在有源层中产生的光不向有源层内部反射; 形成在第二未掺杂GaN层上的p型透明电极; 以及形成为分别连接在n型氮化物半导体层和p型透明电极上的n型电极和p型电极。

    Micro-lens built-in vertical cavity surface emitting laser
    106.
    发明授权
    Micro-lens built-in vertical cavity surface emitting laser 失效
    微透镜内置垂直腔表面发射激光

    公开(公告)号:US07294863B2

    公开(公告)日:2007-11-13

    申请号:US09982086

    申请日:2001-10-19

    摘要: A micro-lens built-in vertical cavity surface emitting laser (VCSEL) includes a substrate and a lower reflector formed on the substrate. An active layer is formed on the lower reflector, generating light by a recombination of electrons and holes. An upper reflector is formed on the active layer including a lower reflectivity than that of the lower reflector. A micro-lens is disposed in a window region through which the laser beam is emitted. A lens layer is formed on the upper reflector with a transparent material transmitting a laser beam; the lens layer includes the micro-lens. An upper electrode is formed above the upper reflector excluding the window region a lower electrode formed underneath the substrate.

    摘要翻译: 微透镜内置垂直腔表面发射激光器(VCSEL)包括在基板上形成的基板和下反射器。 在下反射器上形成有源层,通过电子和空穴的复合产生光。 有源层上形成上反射体,反射率低于下反射体。 微透镜设置在发射激光束的窗口区域中。 在上反射器上形成透镜层,透明材料透射激光束; 透镜层包括微透镜。 在上反射器之上形成上电极,除了形成在基板下方的下电极的窗口区域之外。

    Method for manufacturing a nitride based semiconductor device
    107.
    发明授权
    Method for manufacturing a nitride based semiconductor device 失效
    氮化物半导体器件的制造方法

    公开(公告)号:US07294540B2

    公开(公告)日:2007-11-13

    申请号:US11095073

    申请日:2005-03-31

    IPC分类号: H01L21/338

    摘要: Provided is a nitride-based semiconductor device in which a SAW filter and a HFET are integrated on a single substrate, as well as a method for manufacturing the same. The nitride-based semiconductor device comprises a semi-insulating GaN layer formed on a substrate, a plurality of electrodes for a SAW filter formed on one side of the semi-insulating GaN layer, an Al-doped GaN layer formed on the other side of the semi-insulating GaN layer, an AlGaN layer formed on the Al-doped GaN layer, and a plurality of electrodes for an HFET formed on the AlGaN layer. Both sides of the semi-insulating GaN layer have the same surface level.

    摘要翻译: 提供了一种其中SAW滤波器和HFET集成在单个基板上的氮化物基半导体器件及其制造方法。 氮化物类半导体器件包括形成在衬底上的半绝缘GaN层,形成在半绝缘GaN层的一侧上的用于SAW滤波器的多个电极,形成在半绝缘GaN层的另一侧上的Al掺杂GaN层 半绝缘GaN层,形成在Al掺杂GaN层上的AlGaN层和在AlGaN层上形成的多个用于HFET的电极。 半绝缘GaN层的两侧具有相同的表面水平。

    Apparatus and method for driving display panel with temperature compensated driving voltage
    108.
    发明申请
    Apparatus and method for driving display panel with temperature compensated driving voltage 失效
    用温度补偿驱动电压驱动显示面板的装置和方法

    公开(公告)号:US20070182694A1

    公开(公告)日:2007-08-09

    申请号:US11701227

    申请日:2007-02-01

    IPC分类号: G09G3/36

    摘要: Provided is a method and an apparatus for driving a display panel with a temperature compensated driving voltage, which comprises a temperature sensor, a temperature section register, a comparing unit, a voltage register, a voltage controller and a driver. The comparing unit compares temperature data output from the temperature sensor to temperature section data stored in the temperature section register and outputs comparison data having predetermined bits. The voltage controller selects voltage data corresponding to the comparison data from the voltage data stored in the voltage register and outputs a voltage control signal corresponding to the selected voltage data. The driver outputs a driving voltage corresponding to the voltage control signal to the display panel from among the different driving voltages.

    摘要翻译: 提供了一种用于驱动具有温度补偿驱动电压的显示面板的方法和装置,其包括温度传感器,温度区域寄存器,比较单元,电压寄存器,电压控制器和驱动器。 比较单元将从温度传感器输出的温度数据与存储在温度段寄存器中的温度段数据进行比较,并输出具有预定位的比较数据。 电压控制器从存储在电压寄存器中的电压数据中选择与比较数据相对应的电压数据,并输出与所选电压数据对应的电压控制信号。 驱动器从不同的驱动电压中向显示面板输出与电压控制信号对应的驱动电压。

    Electron emission display spacer and manufacturing method thereof
    109.
    发明申请
    Electron emission display spacer and manufacturing method thereof 失效
    电子发射显示隔板及其制造方法

    公开(公告)号:US20070176530A1

    公开(公告)日:2007-08-02

    申请号:US11700749

    申请日:2007-01-30

    IPC分类号: H01J19/42 H01J1/88 H01K1/18

    摘要: An electron emission display is provided to prevent electron beams around the spacers from being distorted and to prevent arc discharging due to the spacers. The electron emission display includes first and second substrates facing each other to form a vacuum vessel, an electron emission unit provided on the first substrate, a light emission unit provided on the second substrate, and a plurality of spacers disposed between the first and the second substrates. Each spacer has a spacer body with a surface roughness, a resistance layer placed on a lateral side of the spacer body, and a flattening layer covering the resistance layer. The flattening layer has a thickness larger than the thickness of the resistance layer and a surface roughness smaller than the surface roughness of the spacer body.

    摘要翻译: 提供电子发射显示器以防止间隔物周围的电子束变形并且防止由间隔物引起的电弧放电。 电子发射显示器包括彼此面对的第一和第二基板以形成真空容器,设置在第一基板上的电子发射单元,设置在第二基板上的发光单元以及设置在第一和第二基板之间的多个间隔件 底物。 每个间隔物具有表面粗糙度的间隔体,位于间隔体的横向侧的电阻层和覆盖电阻层的平坦化层。 平坦化层的厚度大于电阻层的厚度,表面粗糙度小于间隔体的表面粗糙度。

    Remote access unit and radio-over-fiber network using same
    110.
    发明申请
    Remote access unit and radio-over-fiber network using same 失效
    远程访问单元和使用相同的光纤网络

    公开(公告)号:US20070133995A1

    公开(公告)日:2007-06-14

    申请号:US11607700

    申请日:2006-12-01

    IPC分类号: H04B10/00

    CPC分类号: H04B10/25758

    摘要: A remote access unit (RAU) apparatus, coupled to a central station (CS) of an RoF network through at least one optical fiber, and which RAU apparatus includes at least one antenna, includes: first and second antenna ports coupled to the at least one antenna; first and second optical fiber ports coupled to the at least one optical fiber; a first coupler for decoupling a first downstream signal of a first duplexing method and a second downstream signal of a second duplexing method, which are input through the first optical fiber port; a circulator for outputting the first downstream signal input from the first coupler to the first antenna port and outputting a first upstream signal of the first duplexing method input from the first antenna port to the second optical fiber port; and a second coupler for outputting the second downstream signal input from the first coupler to the second antenna port and outputting a second upstream signal of the second duplexing method input from the second antenna port to the second optical fiber port.

    摘要翻译: 一种远程接入单元(RAU)装置,其通过至少一个光纤耦合到RoF网络的中心站(CS),并且所述RAU设备包括至少一个天线,包括:耦合到所述至少一个天线的第一和第二天线端口 一个天线 耦合到所述至少一个光纤的第一和第二光纤端口; 用于去耦第一双工方法的第一下行信号和通过第一光纤端口输入的第二双工方法的第二下行信号的第一耦合器; 输出从第一耦合器输入的第一下行信号到第一天线端口的循环器,并输出从第一天线端口输入到第二光纤端口的第一双工方式的第一上行信号; 以及第二耦合器,用于将从第一耦合器输入的第二下行信号输出到第二天线端口,并输出从第二天线端口输入到第二光纤端口的第二双工方法的第二上行信号。