Method of Fabricating Thin Film Transistor
    103.
    发明申请
    Method of Fabricating Thin Film Transistor 有权
    制造薄膜晶体管的方法

    公开(公告)号:US20080135839A1

    公开(公告)日:2008-06-12

    申请号:US11972847

    申请日:2008-01-11

    Abstract: A method of fabricating a thin film transistor, in which source and drain electrodes are formed through a solution process, even all stages which include formation of electrodes on a substrate, formation of an insulator layer, and formation of an organic semiconductor layer are conducted through the solution process. In the method, the fabrication is simplified and a fabrication cost is reduced. It is possible to apply the organic thin film transistor to integrated circuits requiring high speed switching because of high charge mobility.

    Abstract translation: 制造薄膜晶体管的方法,其中源极和漏极通过溶液处理形成,甚至包括在衬底上形成电极的所有阶段,形成绝缘体层以及形成有机半导体层通过 解决过程。 在该方法中,简化了制造并降低了制造成本。 由于高电荷迁移率,有机薄膜晶体管可能需要高速切换的集成电路。

    Organic thin film transistor comprising fluorine-based polymer thin film and method for fabricating the same
    105.
    发明申请
    Organic thin film transistor comprising fluorine-based polymer thin film and method for fabricating the same 有权
    含氟基聚合物薄膜的有机薄膜晶体管及其制造方法

    公开(公告)号:US20070194305A1

    公开(公告)日:2007-08-23

    申请号:US11606287

    申请日:2006-11-30

    CPC classification number: H01L51/105 H01L51/0036 H01L51/052 H01L51/0545

    Abstract: Disclosed is an organic thin film transistor, including a substrate, a gate electrode, a gate insulating layer, an organic semiconductor layer, and source/drain electrodes, in which a fluorine-based polymer thin film is provided between the source/drain electrodes and the organic semiconductor layer. A method of fabricating such an organic thin film transistor is also provided. According to example embodiments, the organic thin film transistor may have increased charge mobility and an Ion/Ioff ratio, due to decreased contact resistance between the source/drain electrodes and the organic semiconductor layer. Moreover, upon the formation of the organic semiconductor layer and insulating film, a wet process may be more easily applied, thus simplifying the fabrication process and decreasing the fabrication cost.

    Abstract translation: 公开了一种有机薄膜晶体管,其包括基板,栅极电极,栅极绝缘层,有机半导体层和源极/漏极,其中在源极/漏极之间设置氟基聚合物薄膜和 有机半导体层。 还提供了制造这种有机薄膜晶体管的方法。 根据示例性实施例,由于源极/漏极之间的接触电阻降低,有机薄膜晶体管可能具有增加的电荷迁移率和I / 有机半导体层。 此外,在形成有机半导体层和绝缘膜时,可以更容易地应用湿法,从而简化制造工艺并降低制造成本。

    Organometallic precursor for forming metal film or pattern and method of forming metal film or pattern using the same
    106.
    发明授权
    Organometallic precursor for forming metal film or pattern and method of forming metal film or pattern using the same 失效
    用于形成金属膜或图案的有机金属前体和使用其形成金属膜或图案的方法

    公开(公告)号:US07084288B2

    公开(公告)日:2006-08-01

    申请号:US10676031

    申请日:2003-10-02

    CPC classification number: C07F1/005 H05K3/105

    Abstract: The object of this invention is to provide an organometallic precursor for forming a metal film or pattern and a method of forming the metal film or pattern using the same. More particularly, the present invention provides an organometallic precursor containing a hydrazine-based compound coordinated with a central metal thereof, and a method of forming a metal film or pattern using the same. Further, the present invention provides a composition containing an organometallic compound and a hydrazine-based compound, and a method of forming a metal film or pattern using the same. Additionally, the present invention is advantageous in that a pure metal film or pattern is formed using the organometallic precursor or composition through a simple procedure without limiting atmospheric conditions at a low temperature, and the film or pattern thus formed has excellent conductivity and morphology. Therefore, the film is useful in an electronic device field including flexible displays and large-sized TFT-LCD.

    Abstract translation: 本发明的目的是提供用于形成金属膜或图案的有机金属前体和使用其形成金属膜或图案的方法。 更具体地,本发明提供了含有与其中心金属配位的肼系化合物的有机金属前体,以及使用其形成金属膜或图案的方法。 此外,本发明提供含有有机金属化合物和肼类化合物的组合物,以及使用其形成金属膜或图案的方法。 另外,本发明的优点在于,使用有机金属前体或组合物通过简单的方法形成纯金属膜或图案,而不限制低温下的大气条件,并且由此形成的膜或图案具有优异的导电性和形态。 因此,该电影在包括柔性显示器和大尺寸TFT-LCD的电子设备领域中是有用的。

    Organic thin film transistor comprising multi-layered gate insulator
    107.
    发明授权
    Organic thin film transistor comprising multi-layered gate insulator 有权
    包括多层栅极绝缘体的有机薄膜晶体管

    公开(公告)号:US07005674B2

    公开(公告)日:2006-02-28

    申请号:US10769816

    申请日:2004-02-03

    Abstract: An organic thin film transistor (OTFT) comprising a gate electrode, a gate insulating film, an organic active layer and a source/drain electrode, or a gate electrode, a gate insulating film, a source/drain electrode and an organic active layer, sequentially formed on a substrate, wherein the gate insulating film is a multi-layered insulator comprising a first layer of a high dielectric material and a second layer of an insulating organic polymer compatible with the organic active layer, the second layer being positioned directly under the organic active layer. The OTFT of the present invention shows low threshold and driving voltages, high charge mobility, and high Ion/Ioff, and it can be prepared by a wet process.

    Abstract translation: 一种有机薄膜晶体管(OTFT),包括栅极,栅极绝缘膜,有机活性层和源极/漏极,或栅电极,栅极绝缘膜,源/漏电极和有机活性层, 依次形成在基板上,其中栅极绝缘膜是包括高介电材料的第一层和与有机活性层相容的绝缘有机聚合物的第二层的多层绝缘体,第二层位于 有机活性层。 本发明的OTFT显示低阈值和驱动电压,高电荷迁移率和高/低电流,并且可以通过湿法制备。

    Thin film transistors, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors
    108.
    发明授权
    Thin film transistors, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors 有权
    薄膜晶体管,制造薄膜晶体管的方法以及包括薄膜晶体管的半导体器件

    公开(公告)号:US09564531B2

    公开(公告)日:2017-02-07

    申请号:US13064366

    申请日:2011-03-22

    CPC classification number: H01L29/7869 H01L29/4908

    Abstract: Thin film transistors including a semiconductor channel disposed between a drain electrode and a source electrode; and a gate insulating layer disposed between the semiconductor channel and a gate electrode wherein the semiconductor channel includes a first metal oxide, the gate insulating layer includes a second metal oxide, and at least one metal of the second metal oxide is the same as at least one metal of the first metal oxide, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors.

    Abstract translation: 薄膜晶体管,包括设置在漏电极和源电极之间的半导体沟道; 以及栅极绝缘层,其设置在所述半导体沟道和栅电极之间,其中所述半导体沟道包括第一金属氧化物,所述栅极绝缘层包括第二金属氧化物,并且所述第二金属氧化物的至少一种金属至少与 第一金属氧化物的一种金属,薄膜晶体管的制造方法以及包括薄膜晶体管的半导体器件。

    Nanostructured acousto-optic device, and optical scanner, optical modulator, and holographic display apparatus using the nanostructured acousto-optic device
    109.
    发明授权
    Nanostructured acousto-optic device, and optical scanner, optical modulator, and holographic display apparatus using the nanostructured acousto-optic device 有权
    纳米结构声光装置,以及使用纳米结构声光装置的光学扫描器,光学调制器和全息显示装置

    公开(公告)号:US09477101B2

    公开(公告)日:2016-10-25

    申请号:US13360616

    申请日:2012-01-27

    Abstract: An acousto-optic device capable of increasing a range of a diffraction angle of output light by using a nanostructured acousto-optic medium, and an optical scanner, an optical modulator, a two-dimensional/three-dimensional (2D/3D) conversion stereoscopic image display apparatus, and a holographic display apparatus using the acousto-optic device. The acousto-optic device may include a nanostructured acousto-optic medium formed by at least two different mediums repeatedly alternating with each other, wherein at least one of the at least two different mediums includes an acousto-optic medium. The acousto-optic device having the aforementioned structure may increase the range of a diffraction angle of output light. Thus, various systems such as the optical scanner, the optical modulator, the 2D/3D conversion stereoscopic image display apparatus, and the holographic display apparatus may not require a separate optical system to increase an operational angle range, thereby decreasing a size of the system and/or improving a resolution of the system.

    Abstract translation: 一种能够通过使用纳米结构的声光介质和光学扫描器,光学调制器,二维/三维(2D / 3D)转换立体视觉增强输出光的衍射角的范围的声光器件 图像显示装置和使用该声光装置的全息显示装置。 声光装置可以包括由至少两个不同介质形成的纳米结构的声光介质,所述至少两个介质彼此重复交替,其中所述至少两种不同介质中的至少一种包括声光介质。 具有上述结构的声光装置可以增加输出光的衍射角的范围。 因此,诸如光学扫描器,光学调制器,2D / 3D转换立体图像显示装置和全息显示装置的各种系统可能不需要单独的光学系统来增加操作角度范围,从而减小系统的尺寸 和/或提高系统的分辨率。

    Method for inspecting flat panel
    110.
    发明授权
    Method for inspecting flat panel 有权
    平板检查方法

    公开(公告)号:US09412159B2

    公开(公告)日:2016-08-09

    申请号:US14343345

    申请日:2012-09-13

    Abstract: Disclosed is a method for inspecting a flat panel. The method for inspecting the flat panel includes the steps of: arranging a camera at a measurement location of the flat panel by horizontally moving at least one of the flat panel and the camera; automatically focusing the camera with respect to a measuring target of the flat panel at the measurement location; acquiring a plurality of images for the measuring target by vertically moving the focused camera within a set region on the basis of the present location of the camera when focusing the camera; selecting the image having the most definition for the measuring target among the acquired images; processing the selected image; and determining whether the measuring target is defective or not.

    Abstract translation: 公开了一种用于检查平板的方法。 用于检查平板的方法包括以下步骤:通过水平移动平板和相机中的至少一个来将相机布置在平板的测量位置; 在测量位置相对于平板测量对象自动聚焦相机; 在对照相机进行聚焦时,基于相机的当前位置垂直移动设定区域内的聚焦照相机,来获取测量对象的多个图像; 在所获取的图像中选择具有用于测量目标的最高定义的图像; 处理所选图像; 并且确定测量目标是否有缺陷。

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