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公开(公告)号：US20060034022A1
公开(公告)日：2006-02-16
申请号：US11199448
申请日：2005-08-09
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , G11C11/161 , H01L27/224 , H01L27/228 , H01L43/08 , Y10T428/115
摘要： The present invention relates to a method for manufacturing a magnetoresistive element having a magnetization pinned layer, a magnetization free layer, and a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating into the insulating layer. A process of forming the spacer layer in the method includes depositing a first metal layer forming the metal paths, depositing a second metal layer on the first metal layer, performing a pretreatment of irradiating the second metal layer with an ion beam or a RF plasma of a rare gas, and converting the second metal layer into the insulating layer by means of supplying an oxidation gas or a nitriding gas.
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102.发明申请公开(公告)号：US20050111145A1
公开(公告)日：2005-05-26
申请号：US10954545
申请日：2004-10-01
IPC分类号： C22C19/05 , G11B5/127 , G11B5/33 , G11B5/39 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10
CPC分类号： H01F10/3272 , B82Y25/00 , G11B5/3906 , H01F10/3259 , H01F41/32 , H01F41/325 , H01L27/224 , H01L27/228 , H01L43/08
摘要： A magnetoresistive effect element includes a magnetization pinned layer, a magnetization free layer; a nonmagnetic metal layer disposed between the magnetization pinned layer and the magnetization free layer, a resistance increasing layer, a spin filter layer, and a pair of electrodes. The resistance increasing layer includes a insulation portion and is disposed in at least one of the magnetization pinned layer, the magnetization free layer, and the nonmagnetic metal layer. The spin filter layer is disposed to be adjacent to the magnetization free layer and has a thickness in a range of 5 nm to 20 nm. The magnetization free layer is disposed between the spin filter layer and the nonmagnetic metal layer. The magnetization pinned layer, the magnetization free layer, the nonmagnetic layer, the resistance increasing layer, and the spin filter layer are disposed between the electrodes.
摘要翻译： 磁阻效应元件包括磁化钉扎层，无磁化层; 设置在磁化被钉扎层和无磁化层之间的非磁性金属层，电阻增加层，自旋滤波器层和一对电极。 电阻增加层包括绝缘部分，并且设置在磁化钉扎层，磁化自由层和非磁性金属层中的至少一个中。 自旋过滤层被设置为与无磁化层相邻，并且具有5nm至20nm范围内的厚度。 无磁化层设置在自旋过滤层和非磁性金属层之间。 磁化固定层，磁化自由层，非磁性层，电阻增加层和自旋滤波器层设置在电极之间。
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103.发明申请公开(公告)号：US20050057862A1
公开(公告)日：2005-03-17
申请号：US10895844
申请日：2004-07-22
CPC分类号： H01F10/324 , B82Y25/00 , G11B5/3906 , H01F10/3259 , H01F10/3268
摘要： A magnetoresistive element has a first magnetic layer and a second magnetic layer separate from each other, the first magnetic layer and the second magnetic layer each having a magnetization whose direction is substantially pinned, and a non-magnetic conductive layer formed in contact with the first magnetic layer and the second magnetic layer and electrically connecting the first and second magnetic layers, the non-magnetic conductive layer forming a path of spin-polarized electrons from one of the magnetic layer to the other magnetic layer, the non-magnetic conductive layer comprising a portion located between the first magnetic layer and the second magnetic layer, the portion being a sensing area.
摘要翻译： 磁阻元件具有彼此分离的第一磁性层和第二磁性层，第一磁性层和第二磁性层各自具有方向基本上被钉扎的磁化，以及形成为与第一磁性层接触的非磁性导电层 磁性层和第二磁性层，并且电连接第一和第二磁性层，非磁性导电层形成自旋极化电子的路径从一个磁性层到另一个磁性层，非磁性导电层包括 位于第一磁性层和第二磁性层之间的部分，该部分是感测区域。
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公开(公告)号：US09007720B2
公开(公告)日：2015-04-14
申请号：US12213417
申请日：2008-06-19
申请人： Hideaki Fukuzawa , Hiromi Yuasa
发明人： Hideaki Fukuzawa , Hiromi Yuasa
IPC分类号： G11B5/127 , G11B5/02 , B82Y10/00 , G11B5/31 , G11B5/39 , G11B5/66 , G11B5/74 , G11B5/82 , G11B5/00
CPC分类号： G11B5/66 , B82Y10/00 , G11B5/02 , G11B5/314 , G11B5/3983 , G11B5/743 , G11B5/746 , G11B5/82 , G11B2005/0002 , G11B2005/0024
摘要： A magnetic recording device includes: a magnetic recording medium containing a plurality of recording layers; a magnetic recording head for conducting magnetic writing of information in the magnetic recording medium; and a magnetic reproducing head for conducting magnetic reading out of the information from the magnetic recording medium; wherein the magnetic recording head includes a high frequency oscillator for magnetically assisting the magnetic writing of the information so as to change a magnetization of at least one of the plurality of recording layers of the magnetic recording medium, thereby recording a plurality of information different from one another in the magnetic recording medium commensurate with a total amount of magnetization of the plurality of recording layers.
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公开(公告)号：US08929035B2
公开(公告)日：2015-01-06
申请号：US12468467
申请日：2009-05-19
IPC分类号： G11B5/60 , G11B5/33 , G11B5/39 , H01F10/193 , B82Y40/00 , G01R33/09 , B82Y25/00 , H01L43/08 , H01F41/30 , G11C11/16 , H01L27/22 , H01F10/32
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/398 , G11B5/3983 , G11C11/16 , G11C11/161 , H01F10/1936 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01F10/3281 , H01F41/303 , H01F41/325 , H01L27/224 , H01L27/228 , Y10T428/1121
摘要： A magnetoresistance effect element having a magnetoresistance effect film and a pair of electrode, the magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction, a second magnetization layer whose direction of magnetization changes in response to an external magnetic field, a nonmagnetic intermediate layer located between the first and second magnetic layers, and a film provided in the first magnetic layer, in the second magnetic layer, at an interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at an interface between the second magnetic layer and the nonmagnetic intermediate layer.
摘要翻译： 具有磁阻效应膜和一对电极的磁阻效应元件，具有第一磁性层的磁阻效应膜，其磁化方向基本上被固定在一个方向上;第二磁化层，其磁化方向响应于外部磁性而变化 位于第一和第二磁性层之间的非磁性中间层，以及设置在第一磁性层中的第二磁性层中在第一磁性层和非磁性中间层之间的界面处的膜，和/或 第二磁性层和非磁性中间层之间的界面。
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106.发明授权公开(公告)号：US07742262B2
公开(公告)日：2010-06-22
申请号：US11848374
申请日：2007-08-31
申请人： Hideaki Fukuzawa , Hiromi Yuasa , Hitoshi Iwasaki
发明人： Hideaki Fukuzawa , Hiromi Yuasa , Hitoshi Iwasaki
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3932 , G11B2005/3996
摘要： A magnetoresistive element includes a first magnetic layer a magnetization direction of which is substantially pinned, a second magnetic layer a magnetization direction of which varies depending on an external field, a magnetic spacer layer provided between the first magnetic layer and the second magnetic layer, and electrodes which supply a current perpendicularly to a plane of a stacked film including the first magnetic layer, the magnetic spacer layer and the second magnetic layer. In this element, the magnetization directions of the first and the second magnetic layers are substantially orthogonal at zero external field.
摘要翻译： 磁阻元件包括其磁化方向基本上被钉扎的第一磁性层，其磁化方向根据外部场变化的第二磁性层，设置在第一磁性层和第二磁性层之间的磁性间隔层，以及 电极，其垂直于包括第一磁性层，磁性间隔层和第二磁性层的层叠膜的平面提供电流。 在该元件中，第一和第二磁性层的磁化方向在零外场大致正交。
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107.发明申请公开(公告)号：US20090097166A1
公开(公告)日：2009-04-16
申请号：US12314232
申请日：2008-12-05
IPC分类号： G11B5/33
CPC分类号： H01F10/324 , B82Y25/00 , G11B5/3906 , H01F10/3259 , H01F10/3268
摘要： A magnetoresistive element has a first magnetic layer and a second magnetic layer separate from each other, the first magnetic layer and the second magnetic layer each having a magnetization whose direction is substantially pinned, and a non-magnetic conductive layer formed in contact with the first magnetic layer and the second magnetic layer and electrically connecting the first and second magnetic layers, the non-magnetic conductive layer forming a path of spin-polarized electrons from one of the magnetic layer to the other magnetic layer, the non-magnetic conductive layer comprising a portion located between the first magnetic layer and the second magnetic layer, the portion being a sensing area.
摘要翻译： 磁阻元件具有彼此分离的第一磁性层和第二磁性层，第一磁性层和第二磁性层各自具有方向基本上被钉扎的磁化，以及形成为与第一磁性层接触的非磁性导电层 磁性层和第二磁性层，并且电连接第一和第二磁性层，非磁性导电层形成自旋极化电子的路径从一个磁性层到另一个磁性层，非磁性导电层包括 位于第一磁性层和第二磁性层之间的部分，该部分是感测区域。
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108.发明授权公开(公告)号：US07505234B2
公开(公告)日：2009-03-17
申请号：US11930699
申请日：2007-10-31
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/398 , G11B5/3983 , G11C11/16 , G11C11/161 , H01F10/1936 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01F10/3281 , H01F41/303 , H01F41/325 , H01L27/224 , H01L27/228 , Y10T428/1121
摘要： A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of oxide, nitride, oxinitride, phosphide, and fluoride. The pair of electrodes are electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film.
摘要翻译： 磁阻效应元件包括磁阻效应膜和一对电极。 具有第一磁性层的磁阻效应膜，其磁化方向基本上在一个方向上被固定; 其磁化方向响应于外部磁场而变化的第二磁性层; 位于第一和第二磁性层之间的非磁性中间层; 以及设置在所述第一磁性层中，在所述第二磁性层中，在所述第一磁性层和所述非磁性中间层之间的界面处和/或在所述第二磁性层和所述非磁性中间层之间的界面处设置的膜，所述膜具有 厚度不大于3纳米，该膜具有选自氧化物，氮化物，氮氧化物，磷化物和氟化物中的至少一种。 一对电极电连接到磁阻效应膜，以提供垂直于所述磁阻效应膜的膜平面的感测电流。
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109.发明授权公开(公告)号：US07495870B2
公开(公告)日：2009-02-24
申请号：US10954545
申请日：2004-10-01
IPC分类号： G11B5/33
CPC分类号： H01F10/3272 , B82Y25/00 , G11B5/3906 , H01F10/3259 , H01F41/32 , H01F41/325 , H01L27/224 , H01L27/228 , H01L43/08
摘要： A magnetoresistive effect element includes a magnetization pinned layer, a magnetization free layer; a nonmagnetic metal layer disposed between the magnetization pinned layer and the magnetization free layer, a resistance increasing layer, a spin filter layer, and a pair of electrodes. The resistance increasing layer includes a insulation portion and is disposed in at least one of the magnetization pinned layer, the magnetization free layer, and the nonmagnetic metal layer. The spin filter layer is disposed to be adjacent to the magnetization free layer and has a thickness in a range of 5 nm to 20 nm. The magnetization free layer is disposed between the spin filter layer and the nonmagnetic metal layer. The magnetization pinned layer, the magnetization free layer, the nonmagnetic layer, the resistance increasing layer, and the spin filter layer are disposed between the electrodes.
摘要翻译： 磁阻效应元件包括磁化钉扎层，无磁化层; 设置在磁化被钉扎层和无磁化层之间的非磁性金属层，电阻增加层，自旋滤波器层和一对电极。 电阻增加层包括绝缘部分，并且设置在磁化钉扎层，磁化自由层和非磁性金属层中的至少一个中。 自旋过滤层被设置为与无磁化层相邻，并且具有5nm至20nm范围内的厚度。 无磁化层设置在自旋过滤层和非磁性金属层之间。 磁化固定层，磁化自由层，非磁性层，电阻增加层和自旋滤波器层设置在电极之间。
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公开(公告)号：US20080239542A1
公开(公告)日：2008-10-02
申请号：US12076440
申请日：2008-03-18
申请人： Hiromi Yuasa , Tomoko Taguchi , Hideaki Fukuzawa
发明人： Hiromi Yuasa , Tomoko Taguchi , Hideaki Fukuzawa
IPC分类号： G11B5/02
CPC分类号： G11B5/314 , G11B5/02 , G11B5/1278 , G11B5/3163 , G11B2005/0002
摘要： A magnetic recording head includes: a main magnetic pole containing a ferromagnetic layer; a main magnetic pole-magnetization fixing portion containing an antiferromagnetic layer in contact with at least one side surface of the main magnetic pole; a heater for heating at least the main magnetic pole so that a magnetic interaction between the main magnetic pole and the main magnetic pole-magnetization fixing portion can be decreased; and a magnetic field generator for generating a magnetic field so as to direct a magnetization of the main magnetic pole in one direction.
摘要翻译： 磁记录头包括：含有铁磁层的主磁极; 主磁极固定部，其包含与所述主磁极的至少一个侧面接触的反铁磁层; 用于加热至少主磁极的加热器，使得能够减小主磁极和主磁极固定部之间的磁相互作用; 以及用于产生磁场以引导主磁极在一个方向上的磁化的磁场发生器。
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