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    Endpointing detection for chemical mechanical polishing based on spectrometry
    103.
    发明授权
    Endpointing detection for chemical mechanical polishing based on spectrometry 有权
    基于光谱法的化学机械抛光的终点检测

    公开(公告)号：US09583405B2

    公开(公告)日：2017-02-28

    申请号：US14832997

    申请日：2015-08-21

    Applicant: Applied Materials, Inc.

    Inventor： Dominic J. Benvegnu ,  Jeffrey Drue David ,  Boguslaw A. Swedek

    IPC: H01L21/302 ,  H01L21/66 ,  B24B37/013 ,  B24B37/20 ,  B24B49/08 ,  B24B49/12 ,  B24D7/14 ,  H01L21/321 ,  H01L21/306 ,  H01L21/3105

    CPC classification number: H01L22/26 ,  B24B37/013 ,  B24B37/205 ,  B24B49/08 ,  B24B49/12 ,  B24D7/14 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/3212 ,  H01L21/67075 ,  H01L21/67092 ,  H01L21/67253

    Abstract: Methods and apparatus for spectrum-based endpointing. An endpointing method includes selecting a reference spectrum. The reference spectrum is a spectrum of white light reflected from a film of interest on a first substrate and has a thickness greater than a target thickness. The reference spectrum is empirically selected for particular spectrum-based endpoint determination logic so that the target thickness is achieved when endpoint is called by applying the particular spectrum-based endpoint logic. The method includes obtaining a current spectrum. The current spectrum is a spectrum of white light reflected from a film of interest on a second substrate when the film of interest is being subjected to a polishing step and has a current thickness that is greater than the target thickness. The method includes determining, for the second substrate, when an endpoint of the polishing step has been achieved. The determining is based on the reference and current spectra.

    Abstract translation: 用于基于频谱的终点的方法和装置。 终点方法包括选择参考频谱。 参考光谱是在第一衬底上从感兴趣的膜反射的白光的光谱，并且具有大于目标厚度的厚度。 对于特定的基于频谱的端点确定逻辑，经验地选择参考频谱，使得当通过应用特定的基于频谱的端点逻辑来调用端点时实现目标厚度。 该方法包括获得当前频谱。 目前的光谱是当感兴趣的薄膜经受抛光步骤并且具有大于目标厚度的电流厚度时，在第二基板上从感兴趣的薄膜反射的白光的光谱。 该方法包括为第二基底确定何时已经实现了抛光步骤的终点。 该确定基于参考和当前光谱。

    Limiting Adjustment of Polishing Rates During Substrate Polishing
    104.
    发明申请
    Limiting Adjustment of Polishing Rates During Substrate Polishing 有权
    衬底抛光时抛光速度的限制调整

    公开(公告)号：US20160372388A1

    公开(公告)日：2016-12-22

    申请号：US15257785

    申请日：2016-09-06

    Applicant: Applied Materials, Inc.

    Inventor： Dominic J. Benvegnu ,  Benjamin Cherian ,  Sivakumar Dhandapani ,  Harry Q. Lee

    IPC: H01L21/66 ,  B24B37/005 ,  B24B49/04 ,  H01L21/304

    CPC classification number: H01L22/26 ,  B24B37/005 ,  B24B49/04 ,  H01L22/12

    Abstract: A method of controlling polishing includes polishing a region of a substrate at a first polishing rate, measuring a sequence of characterizing values for the region of the substrate during polishing with an in-situ monitoring system, determining a polishing rate adjustment for each of a plurality of adjustment times prior to a polishing endpoint time, and adjusting a polishing parameter to polish the substrate at a second polishing rate. The time period is greater than a period between the adjustment times and the projected time is before the polishing endpoint time. The second polishing rate is the first polishing rate as adjusted by the polishing rate adjustment.

    Abstract translation: 控制抛光的方法包括：以第一研磨速率抛光基板的区域，用原位监测系统测量抛光时的基板区域的特征值序列，确定多个基板的抛光速度调整 在抛光终点时间之前的调节时间，以及调整抛光参数以在第二抛光速率下抛光衬底。 时间段大于调整时间与预计时间之间的时间在抛光终点时间之前的时间段。 第二抛光速率是通过抛光速率调整调整的第一抛光速率。

    Limiting adjustment of polishing rates during substrate polishing
    106.
    发明授权
    Limiting adjustment of polishing rates during substrate polishing 有权
    衬底抛光期间抛光速率的限制调整

    公开(公告)号：US09490186B2

    公开(公告)日：2016-11-08

    申请号：US14092429

    申请日：2013-11-27

    Applicant: Applied Materials, Inc.

    Inventor： Dominic J. Benvegnu ,  Benjamin Cherian ,  Sivakumar Dhandapani ,  Harry Q. Lee

    IPC: H01L29/04 ,  H01L21/66 ,  B24B37/005 ,  B24B49/04

    CPC classification number: H01L22/26 ,  B24B37/005 ,  B24B49/04 ,  H01L22/12

    Abstract: A method of controlling polishing includes polishing a region of a substrate at a first polishing rate, measuring a sequence characterizing values for the region of the substrate during polishing with an in-situ monitoring system, determining a polishing rate adjustment for each of a plurality of adjustment times prior to a polishing endpoint time, and adjusting a polishing parameter to polish the substrate at a second polishing rate. The time period is greater than a period between the adjustment times and the projected time is before the polishing endpoint time. The second polishing rate is the first polishing rate as adjusted by the polishing rate adjustment.

    Abstract translation: 控制抛光的方法包括：以第一研磨速率抛光基板的区域，用原位监测系统测量抛光时的基板区域的序列特征值，确定多个 在抛光终点时间之前的调整时间，以及调整抛光参数以在第二抛光速率下抛光该衬底。 时间段大于调整时间与预计时间之间的时间在抛光终点时间之前的时间段。 第二抛光速率是通过抛光速率调整调整的第一抛光速率。

    Thin polishing pad with window and molding process
    108.
    发明授权
    Thin polishing pad with window and molding process 有权
    薄型抛光垫带有窗口和成型工艺

    公开(公告)号：US09138858B2

    公开(公告)日：2015-09-22

    申请号：US13948547

    申请日：2013-07-23

    Applicant: Applied Materials, Inc.

    Inventor： Dominic J. Benvegnu ,  Jimin Zhang ,  Thomas H. Osterheld ,  Boguslaw A. Swedek

    IPC: B24B37/26 ,  B24B49/12 ,  B24B37/20 ,  B24B37/013

    CPC classification number: B24B37/205 ,  B24B37/013

    Abstract: A polishing pad is described that has a polishing layer with a polishing surface, an adhesive layer on a side of the polishing layer opposite the polishing layer, and a solid light-transmitting window extending through and molded to the polishing layer. The window has a top surface coplanar with the polishing surface and a bottom surface coplanar with a lower surface of the adhesive layer. A method of making a polishing pad includes forming an aperture through a polishing layer and an adhesive layer, securing a backing piece to the adhesive layer on a side opposite a polishing surface of the polishing layer, dispensing a liquid polymer into the aperture, and curing the liquid polymer to form a window.

    Abstract translation: 描述了具有抛光层的抛光垫，抛光层具有抛光表面，在抛光层的与抛光层相对的一侧上的粘合剂层以及延伸穿过模制到抛光层的固体透光窗。 窗口具有与抛光表面共面的顶表面和与粘合剂层的下表面共面的底表面。 制造抛光垫的方法包括通过抛光层和粘合剂层形成孔，将背衬片固定在与抛光层的抛光表面相对的一侧上的粘合剂层上，将液体聚合物分配到孔中，并固化 液体聚合物形成窗口。

    Reflectivity measurements during polishing using a camera
    109.
    发明授权
    Reflectivity measurements during polishing using a camera 有权
    使用相机进行抛光时的反射率测量

    公开(公告)号：US09095952B2

    公开(公告)日：2015-08-04

    申请号：US13794365

    申请日：2013-03-11

    Applicant: Applied Materials, Inc.

    Inventor： Dominic J. Benvegnu ,  Boguslaw A. Swedek

    IPC: G01N21/00 ,  B24B37/013 ,  B24B49/12

    CPC classification number: B24B37/013 ,  B24B49/12

    Abstract: A substrate polishing system includes a platen to support a polishing surface, a carrier head configured to hold a substrate against the polishing surface during polishing, a light source configured to direct a light beam onto a surface of the substrate, a detector including an array of detection elements, and a controller. The detector is configured to detect reflections of the light beam from an area of the surface, and is configured to generate an image having pixels representing regions on the substrate having a length less than 0.1 mm. The controller is configured to receive the image and to detect clearance of a metal layer from an underlying layer on the substrate based on the image.

    Abstract translation: 衬底抛光系统包括用于支撑抛光表面的压板，构造成在抛光期间将衬底保持抵靠抛光表面的载体头，配置成将光束引导到衬底的表面上的光源;检测器，包括： 检测元件和控制器。 检测器被配置为检测来自表面的区域的光束的反射，并且被配置为产生具有表示具有小于0.1mm的长度的衬底上的区域的像素的图像。 控制器被配置为基于图像接收图像并从基底上的下层检测金属层的间隙。

    Friction sensor for polishing system
    110.
    发明授权
    Friction sensor for polishing system 有权
    抛光系统摩擦传感器

    公开(公告)号：US08758086B2

    公开(公告)日：2014-06-24

    申请号：US13714202

    申请日：2012-12-13

    Applicant: Applied Materials, Inc.

    Inventor： Gabriel Lorimer Miller ,  Manoocher Birang ,  Nils Johansson ,  Boguslaw A. Swedek ,  Dominic J. Benvegnu

    IPC: B24B49/00

    CPC classification number: G01N19/02 ,  B24B37/013 ,  B24B49/16

    Abstract: A system method and apparatus to monitor a frictional coefficient of a substrate undergoing polishing is described. A polishing pad assembly includes a polishing layer including a polishing surface, and a substrate contacting member flexibly coupled to the polishing layer having a top surface to contact an exposed surface of a substrate. At least a portion of the top surface is substantially coplanar with the polishing surface. A sensor is provided to measure a lateral displacement of the substrate contacting member. Some embodiments may provide accurate endpoint detection during chemical mechanical polishing to indicate the exposure of an underlying layer.

    Abstract translation: 描述了用于监测经历抛光的基底的摩擦系数的系统，方法和装置。 抛光垫组件包括包括抛光表面的抛光层，以及柔性地联接到抛光层上的衬底接触构件，其具有与衬底的暴露表面接触的顶表面。 顶表面的至少一部分与抛光表面基本共面。 提供传感器以测量基板接触构件的横向位移。 一些实施例可以在化学机械抛光期间提供准确的端点检测以指示下层的曝光。

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