Device and method for anisotropically plasma etching of a substrate, particularly a silicon body
    101.
    发明申请
    Device and method for anisotropically plasma etching of a substrate, particularly a silicon body 有权
    用于各向异性等离子体蚀刻衬底,特别是硅体的装置和方法

    公开(公告)号:US20050126710A1

    公开(公告)日:2005-06-16

    申请号:US10506457

    申请日:2003-03-05

    IPC分类号: H01L21/00 C23F1/00

    CPC分类号: H01L21/67069

    摘要: A method and device for implementing the method for anisotropically plasma etching a substrate (e.g., silicon body). The device has a chamber and plasma source for generating a high-frequency electromagnetic alternating field and a reaction region for generating a plasma having reactive species, within the chamber, that is generated by the action of the alternating field on etching gas and passivation gas introduced at the same time but spatially separated from it. An arrangement defines at least one first zone acted on by the etching gas and at least one second zone acted on by the passivation gas in the reaction region. The device has a mixing region downstream of the reaction region in which the reactive species generated from the etching gas in the first zone and the reactive species generated from the passivation gas in the second zone are blended before they act on the substrate.

    摘要翻译: 一种用于实现用于各向异性等离子体蚀刻衬底(例如硅体)的方法的方法和装置。 该装置具有用于产生高频电磁交变场的室和等离子体源,以及用于产生等离子体的反应区域,所述反应区域在室内产生,其通过蚀刻气体和钝化气体引入的交变场的作用而产生 同时又与之空间分离。 排列限定了至少一个由蚀刻气体起作用的第一区域和由反应区域中的钝化气体作用的至少一个第二区域。 该装置具有在反应区域下游的混合区域,其中在第一区域内从蚀刻气体产生的反应物质和由第二区域中的钝化气体产生的反应物质在它们作用于基底之前被共混。

    Method for the production of a field-effect structure
    102.
    发明授权
    Method for the production of a field-effect structure 失效
    生产场效应结构的方法

    公开(公告)号:US06645800B2

    公开(公告)日:2003-11-11

    申请号:US10016259

    申请日:2001-10-26

    IPC分类号: H01L218238

    摘要: In a method for the production of a field-effect structure and a field-effect structure, a movable gate structure is arranged above a gate region in a substrate between a drain and a source. The gate region is covered with a gate oxide. The movable gate structure is created from silicon-germanium and in an intermediate step of the production method is arranged on a germanium sacrificial layer on the gate oxide.

    摘要翻译: 在制造场效应结构和场效应结构的方法中,可动栅极结构布置在漏极和源极之间的衬底中的栅极区域的上方。 栅极区域被栅极氧化物覆盖。 可移动栅极结构由硅锗制成,并且在制造方法的中间步骤中,栅极氧化物上的锗牺牲层上布置有可动栅结构。

    Method of manufacturing micromechanical surface structures by vapor-phase etching
    103.
    发明授权
    Method of manufacturing micromechanical surface structures by vapor-phase etching 失效
    通过气相蚀刻制造微机械表面结构的方法

    公开(公告)号:US06558559B1

    公开(公告)日:2003-05-06

    申请号:US09019011

    申请日:1998-02-05

    IPC分类号: C23F100

    CPC分类号: B81C1/00

    摘要: A method of sacrificial layer etching of micromechanical surface structures, in which a sacrificial layer is deposited on a heatable silicon substrate and is structured. A temperature difference between the substrate and the vapor phase of an etching medium is established in such a way that exposed metal contacts made of aluminum alloys are not attacked at the same time and are not subsequently exposed to any risk of corrosion.

    摘要翻译: 一种牺牲层蚀刻微机械表面结构的方法,其中牺牲层沉积在可加热的硅衬底上并被构造。 蚀刻介质的衬底和气相之间的温度差异以这样的方式建立,使得由铝合金制成的暴露的金属触点不会同时受到冲击,并且不会随后暴露于任何腐蚀的风险。

    Method for producing a monocrystalline layer of a conducting or semiconducting material
    104.
    发明授权
    Method for producing a monocrystalline layer of a conducting or semiconducting material 失效
    用于制造导电或半导体材料的单晶层的方法

    公开(公告)号:US06217647B1

    公开(公告)日:2001-04-17

    申请号:US09235018

    申请日:1999-01-21

    IPC分类号: C30B102

    CPC分类号: C23C16/24 C30B1/023 C30B29/06

    摘要: To produce monocrystalline layers of conducting or semiconducting materials on porous monocrystalline layers of the same material in a reproducible and time-saving manner, a method is provided which involves applying an amorphous layer of the same material to the porous material and converting the amorphous layer to a monocrystalline layer by tempering.

    摘要翻译: 为了以可重复且节省时间的方式在相同材料的多孔单晶层上制造导电或半导体材料的单晶层,提供了一种方法,其包括将相同材料的非晶层施加到多孔材料并将非晶层转化为 单晶层通过回火处理。

    Micromechanical acceleration or coriolis rotation-rate sensor
    105.
    发明授权
    Micromechanical acceleration or coriolis rotation-rate sensor 失效
    微机械加速度或科里奥利旋转速率传感器

    公开(公告)号:US06062082A

    公开(公告)日:2000-05-16

    申请号:US913598

    申请日:1997-09-18

    CPC分类号: G01C19/5712

    摘要: An acceleration sensor, particularly a Coriolis rotation-rate sensor, having a swinging structure that is movably suspended on a substrate (base) and can be deflected due to an acceleration effect, the sensor further having an arrangement for generating a planar swinging movement of the swinging structure, particularly a rotational swinging movement, and an evaluating arrangement for detecting a deflection of the swinging structure that is stipulated by acceleration, particularly for detecting a Coriolis acceleration. The swinging structure (12) is rotatably suspended so as to perform a planar swinging movement, and should perform a planar, rotational swinging movement.

    摘要翻译: PCT No.PCT / DE96 / 00248 Sec。 371日期:1997年9月18日 102(e)1997年9月18日PCT PCT 1996年2月17日PCT公布。 出版物WO97 / 02467 日期1997年1月23日具有摆动结构的加速度传感器,特别是科里奥利旋转速率传感器,其可移动地悬挂在基板(基座)上并且可由于加速效应而偏转,该传感器还具有用于产生 摆动结构的平面摆动运动,特别是旋转摆动运动,以及用于检测由加速度规定的摆动结构的偏转的评估装置,特别是用于检测科里奥利加速度。 摆动结构(12)可旋转地悬挂以便进行平面摆动,并且应该进行平面旋转摆动。

    Process for making micromechanical structures
    107.
    发明授权
    Process for making micromechanical structures 失效
    制造微机械结构的方法

    公开(公告)号:US6008138A

    公开(公告)日:1999-12-28

    申请号:US814760

    申请日:1997-03-07

    IPC分类号: B81B3/00 H01L21/302

    摘要: A process for structuring a movable element out of a membrane region. A sacrificial layer and a sealing layer are applied to the underside of the membrane region. Following removal of the sacrificial layer, sealing layer forms a limit stop and a seal for the movement of the movable element.

    摘要翻译: 一种用于从膜区域构造可移动元件的工艺。 将牺牲层和密封层施加到膜区域的下侧。 在去除牺牲层之后,密封层形成限位挡块和用于可移动元件运动的密封件。