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573 条记录 (耗时 0.025 秒)

    Apparatus for laser ion doping
    101.
    发明授权
    Apparatus for laser ion doping 失效
    激光离子掺杂装置

    公开(公告)号：US5849043A

    公开(公告)日：1998-12-15

    申请号：US411973

    申请日：1995-03-28

    申请人： Hongyong Zhang ,  Shunpei Yamazaki ,  Yasuhiko Takemura

    发明人： Hongyong Zhang ,  Shunpei Yamazaki ,  Yasuhiko Takemura

    IPC分类号： B60R25/00 ,  E05B67/06 ,  E05B67/38 ,  H01L21/223 ,  H01L21/336 ,  H01L21/268 ,  H01L21/428

    CPC分类号： H01L29/66757 ,  B60R25/066 ,  H01L21/223 ,  H01L27/14692 ,  Y10T29/41

    摘要： A process for laser processing an article, which comprises: heating the intended article to be doped with an impurity to a temperature not higher than the melting point thereof, said article being made from a material selected from a semiconductor, a metal, an insulator, and a combination thereof; and irradiating a laser beam to the article in a reactive gas atmosphere containing said impurity, thereby allowing the impurity to physically or chemically diffuse into, combine with, or intrude into said article. The present invention also provides an apparatus for use in a laser processing process, characterized by that it is provided with an internal sample holder and a device which functions as a heating means of the sample, a window made of a material sufficiently transparent to transmit a laser beam, a chamber comprising a vacuum evacuation device and a device for introducing a reactive gas containing an impurity element, a laser apparatus operating in a pulsed mode to irradiate a laser beam to said chamber, and a means to move said chamber synchronously with the laser irradiation.

    摘要翻译： 一种激光加工制品的方法，包括：将待掺杂杂质的预期制品加热到不高于其熔点的温度，所述制品由选自半导体，金属，绝缘体， 及其组合; 并在包含所述杂质的反应性气体气氛中向所述制品照射激光束，从而使所述杂质物理或化学扩散到所述制品中，与之结合或侵入所述制品。 本发明还提供了一种在激光加工工艺中使用的装置，其特征在于，其具有内部样品保持器和用作样品加热装置的装置，由足够透明的材料制成的窗口， 激光束，包括真空抽出装置的腔室和用于引入含有杂质元素的反应性气体的装置，以脉冲模式操作以将激光束照射到所述腔室的激光装置，以及与所述腔室同步地移动所述腔室的装置 激光照射。

    Semiconductor device free from reverse leakage and throw leakage
    103.
    发明授权
    Semiconductor device free from reverse leakage and throw leakage 失效
    半导体器件无反向泄漏和漏电

    公开(公告)号：US5821563A

    公开(公告)日：1998-10-13

    申请号：US213837

    申请日：1994-03-16

    申请人： Shunpei Yamazaki ,  Yasuhiko Takemura

    发明人： Shunpei Yamazaki ,  Yasuhiko Takemura

    IPC分类号： H01L21/265 ,  H01L21/336 ,  H01L21/77 ,  H01L21/8238 ,  H01L21/84 ,  H01L27/12 ,  H01L29/08 ,  H01L29/167 ,  H01L29/78 ,  H01L29/786 ,  H01L29/76

    CPC分类号： H01L29/78618 ,  H01L21/26506 ,  H01L21/823814 ,  H01L27/1214 ,  H01L29/0847 ,  H01L29/167 ,  H01L29/6659 ,  H01L29/66757 ,  H01L29/7833 ,  H01L29/78675 ,  H01L2029/7863

    摘要： A semiconductor device and a method for forming the same are disclosed. The semiconductor device comprising an insulated gate field effect transistor provided with a region having added thereto an element at least one selected from the group consisting of carbon, nitrogen, and oxygen, said region having established at either or both of the vicinity of the boundary between the drain and the semiconductor layer under the gate electrode and the vicinity of the boundary between the source and the semiconductor layer under the gate electrode for example by ion implantation using a mask. It is free from the problems of reverse leakage between the source and the drain, and of throw leakage which occurs even at a voltage below the threshold ascribed to the low voltage resistance between the source and the drain.

    摘要翻译： 公开了半导体器件及其形成方法。 该半导体器件包括绝缘栅场效应晶体管，该晶体管具有向其中添加了选自碳，氮和氧的组中的至少一种的元素的区域，所述区域建立在碳，氮和氧之间的边界附近的一个或两个附近 漏极和半导体层以及栅电极下的源极和半导体层之间的边界附近，例如通过使用掩模的离子注入。 在源极和漏极之间的低电压电阻下，即使在低于阈值的电压下也可以产生漏极和漏极之间的泄漏问题。

    Semiconductor active matrix circuit
    104.
    发明授权
    Semiconductor active matrix circuit 失效
    半导体有源矩阵电路

    公开(公告)号：US5789762A

    公开(公告)日：1998-08-04

    申请号：US526935

    申请日：1995-09-12

    申请人： Jun Koyama ,  Yasuhiko Takemura ,  Masahiko Hayakawa ,  Shunpei Yamazaki ,  Akiharu Miyanaga ,  Hisashi Ohtani

    发明人： Jun Koyama ,  Yasuhiko Takemura ,  Masahiko Hayakawa ,  Shunpei Yamazaki ,  Akiharu Miyanaga ,  Hisashi Ohtani

    IPC分类号： H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L31/036 ,  H01L29/04

    CPC分类号： H01L27/1214

    摘要： It is intended to provide a semiconductor circuit including thin-film transistors (TFTs) having a small leak current and TFTs capable of operating at high speed, and a method for manufacturing such a circuit. A material containing a catalyst element is selectively formed so as to be in close contact with an amorphous silicon film, or a catalyst element is selectively introduced into an amorphous silicon film. The amorphous silicon film thus processed is crystallized by illumination with laser light or strong light equivalent to it. A crystalline silicon area with a small amount of catalyst element is used for TFTs in a pixel circuit and a crystalline silicon area with a large amount of catalyst element is used for TFTs in peripheral circuits of an active matrix circuit.

    摘要翻译： 旨在提供一种具有漏电流小的薄膜晶体管（TFT）和能够高速工作的TFT的半导体电路及其制造方法。 选择性地形成含有催化剂元素的材料以与非晶硅膜紧密接触，或者将催化剂元素选择性地引入到非晶硅膜中。 这样处理的非晶硅膜通过照射激光或相当于其的强光而结晶。 具有少量催化剂元素的晶体硅区域用于像素电路中的TFT，并且具有大量催化剂元素的晶体硅区域用于有源矩阵电路的外围电路中的TFT。

    Method of forming a transistor with an LDD structure
    105.
    发明授权
    Method of forming a transistor with an LDD structure 失效
    形成具有LDD结构的晶体管的方法

    公开(公告)号：US5770486A

    公开(公告)日：1998-06-23

    申请号：US616765

    申请日：1996-03-15

    申请人： Hongyong Zhang ,  Yasuhiko Takemura

    发明人： Hongyong Zhang ,  Yasuhiko Takemura

    IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L29/786 ,  H01L21/268 ,  H01L21/84

    CPC分类号： H01L29/66757 ,  H01L29/78621

    摘要： A crystalline silicon thin film transistor having an LDD (lightly doped drain) structure and a process for fabricating the same, which comprises establishing an LDD by forming a gate insulating film and a gate electrode on an island-like semiconductor region and implanting thereafter impurities in a self-aligned manner to establish an LDD, anodically oxidizing the gate electrode and introducing impurities to form source and drain regions, partially or wholly removing the anodic oxide from the surface of the island-like semiconductor region to expose the LDD region, and irradiating a laser beam or an intense light having an intensity equivalent to that of the laser beam to activate the impurity region inclusive of the LDD.

    摘要翻译： 一种具有LDD（轻掺杂漏极）结构的晶体硅薄膜晶体管及其制造方法，其包括通过在岛状半导体区域上形成栅极绝缘膜和栅极电极建立LDD，然后将杂质注入 以自对准的方式建立LDD，阳极氧化栅电极并引入杂质以形成源极和漏极区域，部分地或全部地从岛状半导体区域的表面去除阳极氧化物以暴露LDD区域，以及照射 具有与激光束的强度相等的激光束或强光，以激活包括LDD的杂质区域。

    Active matrix display device
    106.
    发明授权
    Active matrix display device 失效
    主动矩阵显示装置

    公开(公告)号：US5763899A

    公开(公告)日：1998-06-09

    申请号：US597835

    申请日：1996-02-07

    申请人： Shunpei Yamazaki ,  Jun Koyama ,  Yasuhiko Takemura

    发明人： Shunpei Yamazaki ,  Jun Koyama ,  Yasuhiko Takemura

    IPC分类号： G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09G3/30 ,  G09G3/36 ,  H01L29/786 ,  H01L29/04 ,  H01L27/01

    CPC分类号： H01L29/78696 ,  G02F1/13624 ,  G09G3/30 ,  G09G3/3648 ,  H01L29/78645 ,  G02F1/136213 ,  G02F1/1368 ,  G09G2300/0809

    摘要： In an active matrix display device, a circuit including at least five thin film transistors (TFTs) which are provided with an approximately M-shaped semiconductor region for a single pixel electrode and a gate line and a capacitances line which cross the M-shaped semiconductor region, is used as a switching element. Then, by supplying a selection signal to the gate line, the TFTs are operated, thereby writing data to the pixel, while if a suitable voltage is supplied to the capacitance line, a channel is formed thereunder and it becomes a capacitor. Thus the amount of discharge from the pixel electrode is reduced by this capacitor.

    摘要翻译： 在有源矩阵显示装置中，包括至少五个薄膜晶体管（TFT）的电路，其设置有用于单个像素电极的大致M形半导体区域和栅极线以及跨越M形半导体的电容线 区域用作开关元件。 然后，通过向栅极线提供选择信号，TFT被操作，从而将数据写入像素，而如果适当的电压被提供给电容线，则在其上形成沟道并且变成电容器。 因此，通过该电容器来减小来自像素电极的放电量。