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    Silicon solar cell
    102.
    发明授权
    Silicon solar cell 失效
    硅太阳能电池

    公开(公告)号：US5431741A

    公开(公告)日：1995-07-11

    申请号：US166384

    申请日：1993-12-13

    申请人： Susumu Sakaguchi ,  Toru Yamada ,  Tadashi Kamioka ,  Teruhiko Hirasawa

    发明人： Susumu Sakaguchi ,  Toru Yamada ,  Tadashi Kamioka ,  Teruhiko Hirasawa

    IPC分类号： H01L31/0224 ,  H01L31/0352 ,  H01L31/042 ,  H01L31/05

    CPC分类号： H01L31/035281 ,  H01L31/022433 ,  Y02E10/50

    摘要： A novel structure of a silicon solar cell is disclosed, which can be prepared at an outstandingly low cost but can still exhibit good efficiency for the conversion of solar energy to electricity. The silicon solar cell comprises, as an integral body:(a) an electrically insulating substrate plate of, e.g., glass or a ceramic;(b1) a first group of metal contact lines formed in parallel with each other on the substrate surface to jointly serve as an electrode; (b2) a second group of metal contact lines formed in parallel with each other on the substrate surface to jointly serve as a counterelectrode, each of the metal contact lines of the second group being disposed between two metal contact lines of the first group, maintaining electric insulation therebetween; and(c) a plural number of wires of silicon semiconductor, each of which perpendicularly crosses each of the metal contact lines of the first and second groups in direct contact therewith. When the silicon semiconductor is of the n-type, for example, and has discrete p-type regions which are in contact with the metal contact lines of one of the groups, photovoltaic power is generated between the electrodes under irradiation with sunlight. An alternative arrangement of the silicon semiconductor wires is also proposed in which each of the silicon wires bridges a metal contact line of the first group and a metal contact line of the second group in lengthwise contact therewith.

    摘要翻译： 公开了一种硅太阳能电池的新型结构，其可以以非常低的成本制备，但仍然可以显示出将太阳能转换成电的良好效率。 硅太阳能电池包括作为一体的主体：（a）例如玻璃或陶瓷的电绝缘基板; （b1）在基板表面上彼此平行地形成的第一组金属接触线，以共同地用作电极; （b2）在基板表面上彼此平行地形成的第二组金属接触线，以共同用作反电极，第二组的每个金属接触线设置在第一组的两个金属接触线之间，保持 电绝缘; 和（c）多个数量的硅半导体的导线，其中的每一个与第一和第二组的金属接触线的每一个垂直地交叉直接接触。 例如，当硅半导体为n型时，具有与这些组中的一个的金属接触线接触的离散p型区域，在阳光照射下在电极之间产生光伏电力。 还提出了硅半导体布线的替代布置，其中每个硅线桥接第一组的金属接触线和第二组的金属接触线与其纵向接触。

    Vapor phase growth apparatus and method of fabricating epitaxial wafer
    104.
    发明授权
    Vapor phase growth apparatus and method of fabricating epitaxial wafer 有权
    气相生长装置和制造外延晶片的方法

    公开(公告)号：US08926753B2

    公开(公告)日：2015-01-06

    申请号：US10582802

    申请日：2004-11-18

    申请人： Toru Yamada

    发明人： Toru Yamada

    IPC分类号： H01L21/20 ,  C23C16/455 ,  C30B25/14

    CPC分类号： C23C16/455 ,  C30B25/14 ,  Y10T117/10

    摘要： Material gas hits the outer peripheral surface of a dam member and rides on the upper surface side, and then is allowed to flow along the main surface of a silicon single-crystal substrate placed on a susceptor. An upper lining member is disposed above the dam member so as to face the dam member. A gas introducing clearance is formed between the dam member and the upper lining member. In a vapor growth device, the upper lining member is regulated in size so that the length, formed in a direction along the horizontal reference line, of the gas introducing clearance gradually decreases as it is away from the horizontal reference line or is kept constant at any position. A vapor growth device capable of making more uniform the flowing route of a material gas flowing on the silicon single-crystal substrate, and a production method for an epitaxial wafer are provided.

    摘要翻译： 材料气体撞击坝体的外周表面，并在上表面侧上游，然后沿着放置在基座上的硅单晶衬底的主表面流动。 上坝部件设置在坝体上方以面对坝体部件。 在阻挡构件和上衬件之间形成气体导入间隙。 在气相生长装置中，上衬件的尺寸被调节，使得沿着水平参考线的方向形成的气体导入间隙的长度随着离开水平参考线而逐渐减小，或者保持恒定在 任何职位 提供能够使流过硅单晶衬底的材料气体的流动路线更均匀的气相生长装置和外延晶片的制造方法。

    Image quality evaluation method, image quality evaluation system and image quality evaluation program
    106.
    发明授权
    Image quality evaluation method, image quality evaluation system and image quality evaluation program 有权
    图像质量评估方法，图像质量评价体系和图像质量评价方案

    公开(公告)号：US08249358B2

    公开(公告)日：2012-08-21

    申请号：US12446368

    申请日：2007-10-18

    申请人： Toru Yamada

    发明人： Toru Yamada

    IPC分类号： G06K9/46 ,  G01N37/00

    CPC分类号： H04N17/004

    摘要： Provided is an image quality evaluation method for evaluating image qualities of a second image by using a difference from a first image. In the image quality evaluation method, a representative pixel component value indicating a pixel component value that represents pixels in the image frame of one of the images, and pixel position information indicating a pixel position where the representative pixel component value appears are extracted as a feature quantity. By using the representative pixel component value and the pixel position information, which are the image feature quantity, and based on a difference between a pixel component value at the pixel position indicated by the pixel position information in the image frame of the other image and the representative pixel component value, a difference of the entire second image from the first image is estimated.

    摘要翻译： 提供了一种用于通过使用与第一图像的差异来评估第二图像的图像质量的图像质量评估方法。 在图像质量评价方法中，提取表示表示图像之一的图像帧中的像素的像素分量值的代表像素分量值和表示代表像素分量值出现的像素位置的像素位置信息作为特征 数量。 通过使用作为图像特征量的代表像素分量值和像素位置信息，并且基于由另一图像的图像帧中的像素位置信息指示的像素位置处的像素分量值与 代表像素分量值，估计整个第二图像与第一图像的差异。

    IMAGE EVALUATION METHOD, IMAGE EVALUATION SYSTEM AND PROGRAM
    108.
    发明申请
    IMAGE EVALUATION METHOD, IMAGE EVALUATION SYSTEM AND PROGRAM 有权
    图像评估方法，图像评估系统和程序

    公开(公告)号：US20110007968A1

    公开(公告)日：2011-01-13

    申请号：US12922730

    申请日：2009-04-28

    申请人： Toru Yamada

    发明人： Toru Yamada

    IPC分类号： G06K9/03 ,  G06K9/00

    CPC分类号： H04N17/00

    摘要： Disclosed is a picture quality evaluation method with which the amount of pixel change in a pixel set of a specified size is calculated between specified frames of a first image, and weighting processing based on the amount of pixel change is applied to a first picture quality value calculated based on specified data from the first image between at least the aforementioned specified frames to calculate a second picture quality value for the first image.

    摘要翻译： 公开了一种图像质量评估方法，其中在第一图像的指定帧之间计算指定大小的像素组中的像素变化量，并且基于像素变化量的加权处理被应用于第一图像质量值 基于来自第一图像的指定数据在至少上述指定帧之间计算，以计算第一图像的第二图像质量值。

    Circuit wiring interference analysis device, interference analysis program, database used in interference analysis device, and asymmetrically connected line model
    109.
    发明授权
    Circuit wiring interference analysis device, interference analysis program, database used in interference analysis device, and asymmetrically connected line model 有权
    电路布线干扰分析装置，干扰分析程序，干扰分析装置使用的数据库，以及不对称线路模型

    公开(公告)号：US07814445B2

    公开(公告)日：2010-10-12

    申请号：US11911609

    申请日：2006-04-14

    申请人： Hideki Iwaki ,  Naoki Komatsu ,  Tetsuyoshi Ogura ,  Toru Yamada

    发明人： Hideki Iwaki ,  Naoki Komatsu ,  Tetsuyoshi Ogura ,  Toru Yamada

    IPC分类号： G06F17/50

    CPC分类号： G06F17/5036 ,  H05K1/0216 ,  H05K3/0005

    摘要： An interference analysis device that analyzes interference includes an input unit that inputs design data, a selection unit that selects an analysis region, a division unit that divides a wire into segments, a calculation unit that calculates a circuit matrix regarding a coupled line, and an analysis unit that obtains a degree of electromagnetic interference, wherein the calculation unit calculates a circuit matrix of the coupled line, using a parameter set obtained by adding an asymmetry parameter to RLGC parameters of a transmission line in the coupled line. Thus, a method for analyzing an interference of circuit wiring can be provided, which is capable of shortening a processing time substantially while maintaining high precision.

    摘要翻译： 分析干扰的干扰分析装置包括：输入设备数据的输入单元，选择分析区域的选择单元，将线分割成分段的分割单元;计算与耦合线路有关的电路矩阵的计算单元;以及 分析单元，其中所述计算单元使用通过将耦合线中的传输线的RLGC参数加上不对称参数而获得的参数集来计算所述耦合线路的电路矩阵。 因此，可以提供用于分析电路布线的干扰的方法，其能够在保持高精度的同时基本上缩短处理时间。