公开(公告)号：US06838395B1

公开(公告)日：2005-01-04

申请号：US10330080

申请日：2002-12-30

申请人： Yoshihiko Kanzawa ,  Teruhito Ohnishi ,  Ken Idota ,  Tohru Saitoh ,  Akira Asai

发明人： Yoshihiko Kanzawa ,  Teruhito Ohnishi ,  Ken Idota ,  Tohru Saitoh ,  Akira Asai

IPC分类号： C30B1/00 ,  C30B23/02 ,  C30B25/02 ,  C30B29/52 ,  H01L21/205 ,  H01L21/31 ,  H01L21/322 ,  H01L21/324

CPC分类号： H01L21/324 ,  C30B23/02 ,  C30B25/02 ,  C30B29/52 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/02664 ,  H01L21/322 ,  Y10S438/933

摘要： A method for fabricating a semiconductor crystal that has a first step for forming a semiconductor crystal layer (202) that contains carbon atoms and at least one kind of Group IV element other than carbon on a substrate (201), a second step for adding an impurity that is capable of reacting with oxygen to the semiconductor crystal layer (202), and a third step for removing the carbon atoms contained in the semiconductor crystal layer (202) by reacting the carbon with the impurity. This method makes it possible to fabricate a semiconductor crystal substrate in which the concentration of interstitial carbon atoms is satisfactorily reduced, thus resulting in excellent electrical properties when the substrate is applied to a semiconductor device.

摘要翻译： 一种制造半导体晶体的方法，其具有在基板（201）上形成含有碳原子的半导体晶体层（202）和除了碳以外的至少一种第IV族元素的第一工序，第二工序用于添加 能够与氧反应的半导体晶体层（202）的杂质，以及通过使碳与杂质反应来除去半导体结晶层（202）中所含的碳原子的第三工序。 该方法可以制造其中间隙碳原子的浓度令人满意地降低的半导体晶体衬底，从而当将衬底应用于半导体器件时获得优异的电性能。

公开(公告)号：US06828602B2

公开(公告)日：2004-12-07

申请号：US10031445

申请日：2002-01-22

申请人： Akira Asai ,  Teruhito Ohnishi ,  Takeshi Takagi

发明人： Akira Asai ,  Teruhito Ohnishi ,  Takeshi Takagi

IPC分类号： H01L31072

CPC分类号： H01L29/66242 ,  H01L29/1004 ,  H01L29/36 ,  H01L29/7378 ,  Y10S438/936

摘要： A SiGe spacer layer 151, a graded SiGe base layer 152 including boron, and an Si-cap layer 153 are sequentially grown through epitaxial growth over a collector layer 102 on an Si substrate. A second deposited oxide film 112 having a base opening portion 118 and a P+ polysilicon layer 115 that will be made into an emitter connecting electrode filling the base opening portion are formed on the Si-cap layer 153, and an emitter diffusion layer 153a is formed by diffusing phosphorus into the Si-cap layer 153. When the Si-cap layer 153 is grown, by allowing the Si-cap layer 153 to include boron only at the upper part thereof by in-situ doping, the width of a depletion layer 154 is narrowed and a recombination current is reduced, thereby making it possible to improve the linearity of the current characteristics.

摘要翻译： 通过在Si衬底上的集电极层102上的外延生长，顺序地生长SiGe间隔层151，包括硼的梯度SiGe基极层152和Si覆盖层153。 在Si覆盖层153上形成第二沉积氧化物膜112，该第二沉积氧化物膜112具有基底开口部分118和将形成填充基部开口部分的发射极连接电极的P +多晶硅层115，形成发射极扩散层153a 通过将磷扩散到Si覆盖层153中。当Si覆盖层153生长时，通过原位掺杂使Si覆盖层153仅在其上部包含硼，则耗尽层的宽度 154变窄，并且复合电流降低，从而可以提高电流特性的线性。

公开(公告)号：US06518268B1

公开(公告)日：2003-02-11

申请号：US09608636

申请日：2000-06-30

申请人： Allison C. Chin ,  Ryan Holcomb ,  Mieczyslaw A. Piatyszek ,  Upinder Singh ,  Richard L. Tolman ,  Tsutomu Akama ,  Yutaka Kanda ,  Akira Asai ,  Yoshinori Yamashita ,  Kaori Endo ,  Hiroyuki Yamaguchi

发明人： Allison C. Chin ,  Ryan Holcomb ,  Mieczyslaw A. Piatyszek ,  Upinder Singh ,  Richard L. Tolman ,  Tsutomu Akama ,  Yutaka Kanda ,  Akira Asai ,  Yoshinori Yamashita ,  Kaori Endo ,  Hiroyuki Yamaguchi

IPC分类号： A61K31535

CPC分类号： A61K31/426 ,  A61K31/4439 ,  A61K31/506 ,  C07D277/34 ,  C07D277/36 ,  C07D417/06 ,  C07D417/10 ,  C07D513/04

摘要： Thiazolidinedione compounds, compositions, and methods of inhibiting telomerase activity in vitro and treatment of telomerase mediated conditions or diseases ex vivo and in vivo are provided. The methods, compounds and compositions of the invention may be employed alone, or in combination with other pharmacologically active agents in the treatment of conditions or diseases mediated by telomerase activity, such as in the treatment of cancer. Also disclosed are novel methods for assaying or screening for inhibitors of telomerase activity.

摘要翻译： 提供噻唑烷二酮化合物，组合物和在体外抑制端粒酶活性的方法以及离体和体内治疗端粒酶介导的病症或疾病。 本发明的方法，化合物和组合物可以单独使用或与其它药理学活性剂组合用于治疗由端粒酶活性介导的病症或疾病，例如治疗癌症。 还公开了用于测定或筛选端粒酶活性抑制剂的新方法。

公开(公告)号：US06455364B1

公开(公告)日：2002-09-24

申请号：US09526686

申请日：2000-03-15

申请人： Akira Asai ,  Teruhito Oonishi ,  Takeshi Takagi ,  Tohru Saitoh ,  Yoshihiro Hara ,  Koichiro Yuki ,  Katsuya Nozawa ,  Yoshihiko Kanzawa ,  Koji Katayama ,  Yo Ichikawa

发明人： Akira Asai ,  Teruhito Oonishi ,  Takeshi Takagi ,  Tohru Saitoh ,  Yoshihiro Hara ,  Koichiro Yuki ,  Katsuya Nozawa ,  Yoshihiko Kanzawa ,  Koji Katayama ,  Yo Ichikawa

IPC分类号： H01L218249

CPC分类号： H01L29/66242 ,  H01L21/763 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/7378

摘要： In the method for fabricating a semiconductor device of the present invention, a collector layer of a first conductivity type is formed in a region of a semiconductor substrate sandwiched by device isolation. A collector opening is formed through a first insulating layer deposited on the semiconductor substrate so that the range of the collector opening covers the collector layer and part of the device isolation. A semiconductor layer of a second conductivity type as an external base is formed on a portion of the semiconductor substrate located inside the collector opening, while junction leak prevention layers of the same conductivity type as the external base are formed in the semiconductor substrate. Thus, the active region is narrower than the collector opening reducing the transistor area, while minimizing junction leak.

摘要翻译： 在本发明的半导体装置的制造方法中，在被器件分离夹持的半导体基板的区域中形成有第一导电型的集电极层。 通过沉积在半导体衬底上的第一绝缘层形成集电极开口，使得集电极开口的范围覆盖集电极层和器件隔离的一部分。 在位于集电体开口内部的半导体基板的一部分上形成作为外部基底的第二导电类型的半导体层，同时在半导体衬底中形成与外部基底相同的导电类型的防漏层。 因此，有源区域比集电极开口窄，减小晶体管面积，同时最小化结漏电。

公开(公告)号：US06259191B1

公开(公告)日：2001-07-10

申请号：US09437746

申请日：1999-11-10

申请人： Masanori Mitome ,  Masahiro Okuda ,  Toshiaki Aiba ,  Shigeki Matsutani ,  Kazuhiro Takada ,  Akira Asai

发明人： Masanori Mitome ,  Masahiro Okuda ,  Toshiaki Aiba ,  Shigeki Matsutani ,  Kazuhiro Takada ,  Akira Asai

IPC分类号： H01J130

CPC分类号： H01J9/027 ,  H01J1/316

摘要： An electron-emitting apparatus is constituted by an electron-emitting device having an electroconductive film including electron-emitting portions, and an electrode for attracting electrons. An electrically insulated elongated region is formed in the electroconductive film to divide the film into a higher potential side and a lower potential side. The insulated region has a substantially periodical shape formed of portions projecting to the higher potential side and portions projecting to the lower potential side. Continuous electron-emitting portions are present at at least part of the portion projecting to the higher potential side in one period of the insulated region.

摘要翻译： 电子发射设备由具有包括电子发射部分的导电膜和用于吸引电子的电极的电子发射器件构成。 在导电膜中形成电绝缘的细长区域，以将膜分成较高的电势侧和较低的电位侧。 绝缘区域具有基本上周期性的形状，其形成为突出到较高电位侧的部分和向下电位侧突出的部分。 连续的电子发射部分存在于在绝缘区域的一个周期内突出到较高电位侧的部分的至少一部分。

公开(公告)号：US06189994B1

公开(公告)日：2001-02-20

申请号：US08896543

申请日：1997-07-18

申请人： Akira Asai

发明人： Akira Asai

IPC分类号： B41J29393

CPC分类号： B41J2/0454 ,  B41J2/04561 ,  B41J2/0458

摘要： A method for determining an integrated nucleation probability in a jet recording method using thermal energy, wherein a nucleation rate dependent on a temperature of ink is integrated with time from start of heating of the ink in a predetermined region on a heater for heating the ink.

摘要翻译： 一种用于使用热能测定喷墨记录方法中的整体成核概率的方法，其中取决于油墨温度的成核速率与从加热油墨的加热器上的预定区域中油墨开始加热的时间相结合。

公开(公告)号：US6099058A

公开(公告)日：2000-08-08

申请号：US185728

申请日：1998-11-04

申请人： Akira Asai ,  Takashi Asai ,  Yoshiro Asai

发明人： Akira Asai ,  Takashi Asai ,  Yoshiro Asai

IPC分类号： B23Q3/06 ,  B25B1/10 ,  B25B1/18 ,  B25B1/20 ,  B25B3/00 ,  B25B5/06 ,  B25B5/10 ,  B25B5/14 ,  B25B5/16 ,  B66C1/42

CPC分类号： B25B5/163 ,  B25B1/103 ,  B25B3/00 ,  B25B5/10 ,  B25B5/102 ,  Y10S269/902 ,  Y10S294/902

摘要： A gripping device which can grip small articles of different shapes without the need to work its chucking surfaces or to use blocks and liners in combination, and which can position articles in parallel to or perpendicular to a reference surface with a single gripping device. A fixed yoke, a movable yoke and an anvil-side yoke are connected to two columns so that all the yokes can pivot relative to the columns and the movable yoke can further slide relative to the columns to form a parallel crank mechanism. The fixed yoke is provided with a threaded shaft for moving the movable yoke. V grooves are formed in opposed surfaces of the movable yoke and the anvil-side yoke. A plurality of cuts are formed at the portion where the V-grooves are formed in parallel to the columns. The cuts define plate members having V-grooved gripping portions meshing with each other.

摘要翻译： 夹持装置可以抓住不同形状的小物件，而不需要组合其夹紧表面或使用块和衬垫组合，并且可以用单个夹紧装置平行或垂直于参考表面定位物品。 固定轭，可动轭和砧座轭连接到两列，使得所有的轭可相对于列枢转，并且可动轭可以相对于列进一步滑动以形成平行的曲柄机构。 固定轭设置有用于移动可动轭的螺纹轴。 V形槽形成在可动轭和砧座侧轭的相对表面上。 在与柱形平行的部分处形成多个切口。 切口限定具有彼此啮合的V形槽夹持部分的板构件。

公开(公告)号：US6005334A

公开(公告)日：1999-12-21

申请号：US845770

申请日：1997-04-28

申请人： Masanori Mitome ,  Masahiro Okuda ,  Toshiaki Aiba ,  Shigeki Matsutani ,  Kazuhiro Takada ,  Akira Asai

发明人： Masanori Mitome ,  Masahiro Okuda ,  Toshiaki Aiba ,  Shigeki Matsutani ,  Kazuhiro Takada ,  Akira Asai

IPC分类号： H01J1/316 ,  H01J9/02 ,  H01J1/30

CPC分类号： H01J9/027 ,  H01J1/316

摘要： An electron-emitting apparatus is constituted by an electron-emitting device having an electroconductive film including electron-emitting portions, and an electrode for attracting electrons. An electrically insulated elongated region is formed in the electroconductive film to divide the film into a higher potential side and a lower potential side. The insulated region has a substantially periodical shape formed of portions projecting to the higher potential side and portions projecting to the lower potential side. Continuous electron-emitting portions are present at at least part of the portion projecting to the higher potential side in one period of the insulated region.

摘要翻译： 电子发射设备由具有包括电子发射部分的导电膜和用于吸引电子的电极的电子发射器件构成。 在导电膜中形成电绝缘的细长区域，以将膜分成较高的电势侧和较低的电位侧。 绝缘区域具有基本上周期性的形状，其形成为突出到较高电位侧的部分和向下电位侧突出的部分。 连续的电子发射部分存在于在绝缘区域的一个周期内突出到较高电位侧的部分的至少一部分。

公开(公告)号：US5850488A

公开(公告)日：1998-12-15

申请号：US585709

申请日：1996-01-16

申请人： Akira Asai ,  Masayoshi Tachihara

发明人： Akira Asai ,  Masayoshi Tachihara

IPC分类号： G06F17/21 ,  G06K15/02 ,  G06T11/20 ,  G06K9/42 ,  H04N1/40

CPC分类号： G06F17/214 ,  G06K15/02 ,  G06T11/203 ,  G06K2215/0028 ,  G06K2215/0042

摘要： In the invention, a plane region to which characters are output is divided into lattice-like elements (orthogonal lattice, triangular lattice, hexagonal lattice, etc.). In each element, an area ratio of the area to be output to the element is previously stored. The portion in the element in which the area ratio is equal to a first predetermined value (area ratio=0) is not output. The portion in the element in which the area ratio is equal to a second predetermined value (area ratio=1) larger than the first predetermined value is output. Further, the portion in the element in which the area ratio is larger than the first predetermined value and is smaller than the second predetermined value is regarded as a distribution of the continuous area ratio on the basis of the values of the area ratios of such an element and the elements therearound. The portion in which the area ratio is equal to or larger than a third predetermined value is output.

摘要翻译： 在本发明中，将字符输出的平面区域划分为格子状（正交格子，三角形格子，六边形格子等）。 在每个元件中，预先存储要输出到元件的面积的面积比。 不输出面积比等于第一预定值（面积比= 0）的元件中的部分。 输出面积比等于大于第一预定值的第二预定值（面积比= 1）的元件中的部分。 此外，面积比大于第一预定值并且小于第二预定值的元件中的部分被认为是基于这样的面积比的值的连续面积比的分布 元素和其周围的元素。 输出面积比等于或大于第三预定值的部分。

公开(公告)号：US5798379A

公开(公告)日：1998-08-25

申请号：US994029

申请日：1997-12-18

申请人： Tamio Mizukami ,  Harumi Ogawa ,  Ryuichiro Nakai ,  Akira Asai ,  Yoshinori Yamashita ,  Katsuhiko Ando ,  Tsutomu Agatsuma ,  Shiro Akinaga ,  Kozo Ouchi ,  Hideki Kawasaki

发明人： Tamio Mizukami ,  Harumi Ogawa ,  Ryuichiro Nakai ,  Akira Asai ,  Yoshinori Yamashita ,  Katsuhiko Ando ,  Tsutomu Agatsuma ,  Shiro Akinaga ,  Kozo Ouchi ,  Hideki Kawasaki

IPC分类号： C07D487/04 ,  C07D491/16 ,  C12P17/14 ,  A61K31/40 ,  C07D487/02

CPC分类号： C07D487/04 ,  C12P17/14

摘要： UCS1025 compounds represented by the following formula (I): ##STR1## wherein R represents hydrogen or hydroxyl group, or tautomers or pharmacologically acceptable salts thereof.

摘要翻译： 由下式（I）表示的UCS1025化合物：其中R表示氢或羟基，或互变异构体或其药理学上可接受的盐。