公开(公告)号：US20080093680A1

公开(公告)日：2008-04-24

申请号：US11961750

申请日：2007-12-20

Applicant: Krishnaswamy Ramkumar ,  Sundar Narayanan

Inventor： Krishnaswamy Ramkumar ,  Sundar Narayanan

IPC: H01L29/78 ,  H01L21/31

CPC classification number: H01L21/022 ,  H01L21/0217 ,  H01L21/02233 ,  H01L21/02337 ,  H01L21/28044 ,  H01L21/3144 ,  H01L29/4941 ,  H01L29/78

Abstract: A method of making a semiconductor structure comprises forming an oxide layer on a substrate; forming a silicon nitride layer on the oxide layer; annealing the layers in NO; and annealing the layers in ammonia. The equivalent oxide thickness of the oxide layer and the silicon nitride layer together is at most 25 Angstroms.

Abstract translation: 制造半导体结构的方法包括在衬底上形成氧化物层; 在氧化物层上形成氮化硅层; 在NO中退火层; 并在氨中退火层。 氧化物层和氮化硅层的等效氧化物厚度在一起为至多25埃。

公开(公告)号：US07256083B1

公开(公告)日：2007-08-14

申请号：US10185646

申请日：2002-06-28

Applicant: Alain Blosse ,  Krishnaswamy Ramkumar

Inventor： Alain Blosse ,  Krishnaswamy Ramkumar

IPC: H01L21/8238

CPC classification number: H01L21/28247 ,  H01L21/28061 ,  H01L29/4941

Abstract: A method of making a semiconductor structure includes depositing a nitride layer, on a metallic layer, by PECVD. The metallic layer is on a gate layer containing silicon, and the gate layer is on a semiconductor substrate.

Abstract translation: 制造半导体结构的方法包括通过PECVD在金属层上沉积氮化物层。 金属层位于含硅的栅极层上，栅极层位于半导体衬底上。

公开(公告)号：US07189652B1

公开(公告)日：2007-03-13

申请号：US10313048

申请日：2002-12-06

Applicant: Alain Blosse ,  Sundar Narayanan ,  Krishnaswamy Ramkumar

Inventor： Alain Blosse ,  Sundar Narayanan ,  Krishnaswamy Ramkumar

IPC: H01L21/302

CPC classification number: H01L21/28247 ,  H01L21/28061

Abstract: A method of forming a semiconductor structure comprises oxidizing a stack, to form sidewall oxide in contact with sides of the stack. The stack is on a semiconductor substrate, the stack includes a gate layer, comprising silicon; a metallic layer, on the gate layer; and an etch-stop layer, on the metallic layer. The sidewall oxide in contact with the metallic layer is thinner than the sidewall oxide in contact with the gate layer.

Abstract translation: 形成半导体结构的方法包括氧化堆叠，以形成与堆叠的侧面接触的侧壁氧化物。 堆叠在半导体衬底上，堆叠包括包含硅的栅极层; 栅极层上的金属层; 和金属层上的蚀刻停止层。 与金属层接触的侧壁氧化物比与栅极层接触的侧壁氧化物薄。

公开(公告)号：US07094707B1

公开(公告)日：2006-08-22

申请号：US10142963

申请日：2002-05-13

Applicant: Krishnaswamy Ramkumar ,  Sundar Narayanan

Inventor： Krishnaswamy Ramkumar ,  Sundar Narayanan

IPC: H01L23/58

CPC classification number: H01L21/28202 ,  H01L21/28035 ,  H01L29/518

Abstract: A method of nitriding a gate oxide layer by annealing a preformed oxide layer with nitric oxide (NO) gas in a hot wall, single wafer furnace is provided. The nitridation process can be carried out rapidly (i.e., at nitridation times of 30 seconds to 2 minutes) while providing acceptable levels of nitridation (i.e., up to 6 at. %) and desirable nitrogen/depth profiles. The nitrided gate oxide layer can optionally be reoxidized in a second oxidation step after the nitridation step. A gate electrode layer (e.g., boron doped polysilicon) can then be deposited on top of the nitrided gate oxide layer or on top of the reoxidized and nitrided gate oxide layer.

Abstract translation: 提供了一种通过在热壁中的一氧化氮（NO）气体退火预形成的氧化物层来对栅极氧化物层进行氮化的方法。 氮化处理可以快速进行（即，在30秒至2分钟的氮化时间），同时提供可接受的氮化水平（即高达6原子％）和所需的氮/深度分布。 氮化栅氧化层可以在氮化步骤后的第二氧化步骤中任选地再氧化。 然后可以在氮化栅极氧化物层的顶部上或在再氧化和氮化的栅极氧化物层的顶部上沉积栅极电极层（例如，硼掺杂的多晶硅）。

公开(公告)号：US07026235B1

公开(公告)日：2006-04-11

申请号：US10072164

申请日：2002-02-07

Applicant: Mira Ben-Tzur ,  Krishnaswamy Ramkumar

Inventor： Mira Ben-Tzur ,  Krishnaswamy Ramkumar

IPC: H01L21/4763

CPC classification number: H01L21/7682 ,  H01L21/76807 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In one embodiment, an interconnect line on one level of an integrated circuit is electrically coupled to another interconnect line on another level. The two layers of interconnects may be coupled together using a via. To reduce capacitance between the interconnect lines, an air core is formed between them. The air core may be formed by using a chemistry that includes a noble gas fluoride to etch a sacrificial layer between the interconnect layers.

Abstract translation: 在一个实施例中，集成电路的一个电平上的互连线电连接到另一个电平上的另一个互连线。 两层互连可以使用通孔耦合在一起。 为了减小互连线之间的电容，在它们之间形成空芯。 空芯可以通过使用包含惰性气体氟化物的化学物质来形成，以蚀刻互连层之间的牺牲层。

公开(公告)号：US06969684B1

公开(公告)日：2005-11-29

申请号：US09846119

申请日：2001-04-30

Applicant: Yitzhak Gilboa ,  William W. C. Koutny, Jr. ,  Steven Hedayati ,  Krishnaswamy Ramkumar

Inventor： Yitzhak Gilboa ,  William W. C. Koutny, Jr. ,  Steven Hedayati ,  Krishnaswamy Ramkumar

IPC: H01L21/302 ,  H01L21/3105 ,  H01L21/762

CPC classification number: H01L21/76224 ,  H01L21/31053 ,  H01L21/31055

Abstract: A method is provided for eliminating a polish stop layer from a polishing process. In particular, a method is provided which may include polishing an upper layer of a semiconductor topography to form an upper surface at an elevation above an underlying layer, wherein the upper surface does not include a polish stop material. Preferably, the upper surface of the topography formed by polishing is spaced sufficiently above the underlying layer to avoid polishing the underlying layer. The entirety of the upper surface may be simultaneously etched to expose the underlying layer. In an embodiment, the underlying layer may comprise a lateral variation in polish characteristics. The method may include using fixed abrasive polishing of a dielectric layer for reducing a required thickness of an additional layer underlying the dielectric layer. Such a method may be useful when exposing an underlying layer is desirable by techniques other than polishing.

Abstract translation: 提供了一种从抛光过程中消除抛光停止层的方法。 特别地，提供了一种方法，其可以包括抛光半导体形貌的上层以形成在下层之上的高度上的上表面，其中上表面不包括抛光停止材料。 优选地，通过抛光形成的形貌的上表面被充分地间隔在下面的层上，以避免抛光下面的层。 可以同时蚀刻整个上表面以暴露下层。 在一个实施例中，下层可以包括抛光特性的横向变化。 该方法可以包括使用介电层的固定研磨抛光来减少介电层下面的附加层的所需厚度。 当通过除了抛光之外的技术来期望暴露下层时，这种方法可能是有用的。

公开(公告)号：US06943126B1

公开(公告)日：2005-09-13

申请号：US10314381

申请日：2002-12-06

Applicant: Sundar Narayanan ,  Krishnaswamy Ramkumar

Inventor： Sundar Narayanan ,  Krishnaswamy Ramkumar

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/0217 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/28176 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32139 ,  H01L21/76834 ,  H01L29/518

Abstract: A method of forming a semiconductor structure comprises forming an etch-stop layer comprising nitride, on a stack. The stack is on a semiconductor substrate, and the stack comprises (i) a gate layer. The forming is by CVD with a gas comprising a first compound which is SixL2x, and a second compound comprising nitrogen and deuterium, L is an amino group, and X is 1 or 2.

Abstract translation: 形成半导体结构的方法包括在叠层上形成包含氮化物的蚀刻停止层。 堆叠在半导体衬底上，堆叠包括（i）栅极层。 通过CVD形成是用包含第二化合物的气体，该第一化合物是Si x L 2 x X 2，以及包含氮和氘的第二化合物，L是氨基，X是 是1或2。

公开(公告)号：US06817903B1

公开(公告)日：2004-11-16

申请号：US09635507

申请日：2000-08-09

Applicant: Krishnaswamy Ramkumar ,  Kaichiu Wong ,  Venuka Jayatilaka

Inventor： Krishnaswamy Ramkumar ,  Kaichiu Wong ,  Venuka Jayatilaka

IPC: H01L21311

CPC classification number: H01L21/02164 ,  H01L21/022 ,  H01L21/02238 ,  H01L21/02271 ,  H01L21/31662 ,  H01L21/76205 ,  H01L21/76224

Abstract: A method and process reducing or eliminating electrical leakage between active areas in a semiconductor separated by isolation regions. A method and process are disclosed for the fabrication of an isolation region in a semiconductor. The method and process can be used in the fabrication of isolation regions used for the separation of adjacent active areas in an integrated circuit. A shallow trench is created on the surface of the semiconductor in regions where isolation spaces are to be formed. A layer of silicon dioxide (LINOX) is then grown over the surfaces of the trench. The LINOX covers roughened regions formed along the surfaces of the trench during its formation. The LINOX is then annealed at a temperature above the LINOX deposition temperature for a period of time. Annealing reduces stresses in the LINOX and in the surrounding semiconductor material. Annealing also increases the density of the LINOX. Thus annealing increases the LINOX resistance to gouge during subsequent processing. This leads to a reduction in dislocations in the semiconductor and a reduction in electrical leakage around the isolation region. A more robust LINOX and a reduction in electrical leakage around an isolation region allows the further shrinkage of integrated circuit dimensions. Furthermore, denuding and gettering of the semiconductor are both accomplished during the annealing step which results in a shortening of total processing time. Finally, since gouging of the LINOX no longer occurs where poly/spacer etch overlaps an active area corner, restrictions on placement of poly lines have been eliminated.

Abstract translation: 一种减少或消除由隔离区隔开的半导体的有源区之间的漏电的方法和过程。 公开了用于制造半导体中的隔离区域的方法和工艺。 该方法和过程可用于制造用于在集成电路中分离相邻有源区的隔离区。 在要形成隔离空间的区域中，在半导体的表面上形成浅沟槽。 然后在沟槽的表面上生长一层二氧化硅（LINOX）。 LINOX包括在其形成期间沿着沟槽的表面形成的粗糙区域。 然后将LINOX在高于LINOX沉积温度的温度下退火一段时间。 退火降低了LINOX和周围半导体材料的应力。 退火也增加了LINOX的密度。 因此，退火在后续加工过程中增加了LINOX电阻。 这导致半导体中位错的减少和隔离区周围的漏电减少。 更强大的LINOX和隔离区域周围的漏电减少允许集成电路尺寸进一步收缩。 此外，半导体的剥蚀和吸杂都在退火步骤期间完成，这导致总处理时间的缩短。 最后，由于在多层/间隔层蚀刻与有源区域角重叠的情况下，LINOX的刨削不再发生，所以已经消除了对多线的布置的限制。

公开(公告)号：US06794269B1

公开(公告)日：2004-09-21

申请号：US10324989

申请日：2002-12-20

Applicant: Prabhuram Gopalan ,  Biju Parameshwaran ,  Krishnaswamy Ramkumar ,  Hanna Bamnolker ,  Sundar Narayanan

Inventor： Prabhuram Gopalan ,  Biju Parameshwaran ,  Krishnaswamy Ramkumar ,  Hanna Bamnolker ,  Sundar Narayanan

IPC: H01L2176

CPC classification number: H01L21/763 ,  H01L21/76202

Abstract: A method is provided which includes forming a deep isolation structure within a semiconductor topography. In some cases, the method may include forming a first isolation structure within a semiconductor layer and etching an opening within the isolation structure to expose the semiconductor layer. In addition, the method may include etching the semiconductor layer to form a trench extending through the isolation structure and at least part of the semiconductor layer. In some cases, the method may include removing part of a first fill layer deposited within the trench such that an upper surface of the fill layer is below an upper portion of the trench. In such an embodiment, the vacant portion of the trench may be filled with a second fill layer. In yet other embodiments, the method may include planarizing the first fill layer within the trench and subsequently oxidizing an upper portion of the fill layer.

Abstract translation: 提供了一种方法，其包括在半导体形貌内形成深度隔离结构。 在一些情况下，该方法可以包括在半导体层内形成第一隔离结构并蚀刻隔离结构内的开口以暴露半导体层。 此外，该方法可以包括蚀刻半导体层以形成延伸穿过隔离结构和半导体层的至少一部分的沟槽。 在一些情况下，该方法可以包括去除沉积在沟槽内的第一填充层的部分，使得填充层的上表面在沟槽的上部下方。 在这样的实施例中，沟槽的空缺部分可以填充第二填充层。 在其他实施例中，该方法可以包括平坦化沟槽内的第一填充层，随后氧化填充层的上部。

公开(公告)号：US06677213B1

公开(公告)日：2004-01-13

申请号：US10094108

申请日：2002-03-08

Applicant: Krishnaswamy Ramkumar ,  Frederick B. Jenne

Inventor： Krishnaswamy Ramkumar ,  Frederick B. Jenne

IPC: H01L21336

CPC classification number: H01L21/28176 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28282 ,  H01L21/3003 ,  H01L29/513 ,  H01L29/518 ,  H01L29/792

Abstract: A method for processing a semiconductor topography is provided, which includes diffusing deuterium across one or more interfaces of a silicon-oxide-nitride-oxide-silicon (SONOS) structure. In particular, the method may include diffusing deuterium across one or more interfaces of a SONOS structure during a reflow of a dielectric layer spaced above the SONOS structure. In some embodiments, the method may include forming a deutereated nitride layer above the SONOS structure prior to the reflow process. In addition or alternatively, the method may include forming a deutereated nitride layer within the SONOS structure prior to the reflow process. In some cases, the method may further include annealing the SONOS structure with a deutereated substance prior to forming the deutereated nitride layer. In either embodiment, a SONOS structure may be formed which includes deuterium arranged within an interface of a silicon layer and an oxide layer of the structure.

Abstract translation: 提供了一种用于处理半导体形貌的方法，其包括在氧化硅 - 氮化物 - 氧化物 - 硅（SONOS）结构的一个或多个界面上扩散氘。 特别地，该方法可以包括在SONOS结构之间隔开的电介质层的回流期间扩散氘穿过SONOS结构的一个或多个界面。 在一些实施方案中，该方法可以包括在回流工艺之前在SONOS结构之上形成去氢化氮化物层。 另外或替代地，该方法可以包括在回流工艺之前在SONOS结构内形成一个去氢化氮化物层。 在一些情况下，该方法可以进一步包括在形成去氢化氮化物层之前用缺失的物质退火SONOS结构。 在任一实施例中，可以形成SONOS结构，其包括排列在硅层和该结构的氧化物层的界面内的氘。